Difference between revisions of "Lithography Recipes"
(Added "General Photlith techniques" section and links to 2 pages) |
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#***[[Lithography Recipes#E-Beam Lithography Recipes|JEOL JBX-6300FS EBL]] |
#***[[Lithography Recipes#E-Beam Lithography Recipes|JEOL JBX-6300FS EBL]] |
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#***[[Lithography Recipes#FIB Lithography Recipes .28Raith Velion.29|Raith Velion FIB]] |
#***[[Lithography Recipes#FIB Lithography Recipes .28Raith Velion.29|Raith Velion FIB]] |
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+ | #**[[Lithography Recipes#Automated Coat.2FDevelop System Recipes .28S-Cubed Flexi.29|Automated Coater Recipes (S-Cubed Flexi)]] |
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+ | #[[Lithography Recipes#General Photolithography Techniques|'''General Photolithography Techniques''']] |
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+ | #*''Techniques for improving litho. or solving common photolith. problems.'' |
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#'''[[Lithography Recipes#Lift-Off Recipes|Lift-Off Recipes]]''' |
#'''[[Lithography Recipes#Lift-Off Recipes|Lift-Off Recipes]]''' |
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#*''Verified Recipes for lift-off using various photolith. tools'' |
#*''Verified Recipes for lift-off using various photolith. tools'' |
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#*''Recipes for silicon substrates are provided, and have been translated to other substrates by users.'' |
#*''Recipes for silicon substrates are provided, and have been translated to other substrates by users.'' |
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#*''Datasheets are provided with starting recipes and usage info.'' |
#*''Datasheets are provided with starting recipes and usage info.'' |
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+ | #[[Lithography Recipes#Edge-Bead Removal|'''Edge-Bead Removal''']] |
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+ | #*''Edge photoresist removal methods needed for clamp-based etchers'' |
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+ | #*''Improves resolution for contact lithography'' |
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− | == |
+ | ==General Photolithography Techniques== |
− | * |
+ | *[[Photolithography - Improving Adhesion Photoresist Adhesion|'''HMDS Process for Improving Adhesion''']] |
+ | **''Use these procedures if you are finding poor adhesion PR lifting-off), or for chemicals (like BHF) that attack the PR adhesion interface strongly.'' |
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− | * [[Photolithography - Manual Edge-Bead Removal Techniques|Manual Edge-Bead Removal Techniques]] - removing the edge-bead from your substrate will help with contact litho resolution and alignment. |
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+ | *[[Photolithography - Manual Edge-Bead Removal Techniques|'''Edge-Bead Removal Techniques''']] |
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+ | **''These techniques are required for loading full-wafers into etchers that use top-side clamps, to prevent photoresist from sticking to the clamp (and potentially destroying your wafer).'' |
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+ | **''For contact lithography, this improves the proximity of the mask plate and sample, improving resolution. For some projection systems, such as the [[Maskless Aligner (Heidelberg MLA150)|Maskless Aligner]], EBR can help with autofocus issues.'' |
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+ | *[https://www.microchemicals.com/technical_information/reflow_photoresist.pdf '''Photoresist reflow (MicroChem)'''], to create slanted sidewalls or curved surfaces. |
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==Photolithography Recipes== |
==Photolithography Recipes== |
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+ | *<small>'''R''': ''Recipe is available. Clicking this link will take you to the recipe.''</small> |
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− | {{Recipe Table Explanation}} |
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+ | *<small>'''A''': ''Material is available for use, but no recipes are provided.''</small> |
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''Click the tool title to go to recipes for that tool.'' |
''Click the tool title to go to recipes for that tool.'' |
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− | |{{rl|Stepper Recipes|DUV-42P}} |
+ | |{{rl|Stepper Recipes|DUV-42P-6}} |
+ | | |
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*{{fl|Liftoff-Techniques.pdf|Lift-Off Description/Tutorial}} |
*{{fl|Liftoff-Techniques.pdf|Lift-Off Description/Tutorial}} |
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**How it works, process limits and considerations for designing your process |
**How it works, process limits and considerations for designing your process |
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+ | *[[Lift-Off with I-Line Imaging Resist + LOL2000 Underlayer|I-Line Lift-Off: Bi-Layer Process with LOL2000 Underlayer]] |
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+ | **''Single Expose/Develop process for simplicity'' |
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+ | **''Up to ~130nm metal thickness & ≥500nm-1000nm gap between metal.'' |
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+ | **''Can use any I-Line litho tool (GCA Stepper, Contact aligner, MLA)'' |
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*{{fl|Bi-LayerContactprocesswithPMGI.pdf|I-Line Lift-Off: Bi-Layer Process with PMGI Underlayer and Contact Aligner}} |
*{{fl|Bi-LayerContactprocesswithPMGI.pdf|I-Line Lift-Off: Bi-Layer Process with PMGI Underlayer and Contact Aligner}} |
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+ | **''Multiple processes for Metal thicknesses ~800nm to ~2.5µm'' |
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+ | **''Uses multiple DUV Flood exposure/develop cycles to create undercut.'' |
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+ | **''Can be transferred to other I-Line litho tools (Stepper, MLA etc.)'' |
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*[[Lift-Off with DUV Imaging + PMGI Underlayer|DUV Lift-Off: UV6 Imaging Resist + PMGI Underlayer]] |
*[[Lift-Off with DUV Imaging + PMGI Underlayer|DUV Lift-Off: UV6 Imaging Resist + PMGI Underlayer]] |
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+ | **''Single-expose/develop process'' |
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+ | **''Up to ~65nm metal thickness & ~350nm gap between metal'' |
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+ | **''Use thicker PMGI for thicker metals'' |
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==[[E-Beam Lithography System (JEOL JBX-6300FS)|E-Beam Lithography Recipes (JEOL JBX-6300FS)]]== |
==[[E-Beam Lithography System (JEOL JBX-6300FS)|E-Beam Lithography Recipes (JEOL JBX-6300FS)]]== |
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==[[Automated Coat/Develop System (S-Cubed Flexi)|Automated Coat/Develop System Recipes (S-Cubed Flexi)]]== |
==[[Automated Coat/Develop System (S-Cubed Flexi)|Automated Coat/Develop System Recipes (S-Cubed Flexi)]]== |
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Recipes pre-loaded on the S-Cubed Flexi automated coat/bake/develop system. Only staff may write new recipes, contact the tool supervisor for more info. |
Recipes pre-loaded on the S-Cubed Flexi automated coat/bake/develop system. Only staff may write new recipes, contact the tool supervisor for more info. |
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+ | {| class="wikitable" |
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+ | |+''Ask [[Tony Bosch|Staff]] if you need a new recipe.'' |
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+ | |'''''<u>Coating Material</u>''''' |
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+ | |'''''<u>Route/Chain</u>''''' |
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+ | |'''''<u>Name</u>''': User: "UCSB Users"'' |
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+ | |'''''<u>Spin Speed (krpm)</u>''''' |
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+ | |'''''<u>Bake Temp</u>''''' |
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+ | |'''''<u>Notes</u>''''' |
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+ | |- |
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+ | |'''''DS-K101''''' |
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+ | |''Route'' |
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+ | | colspan="4" |''DSK101's Develop Rate depends on Bake temp - you can use this to control undercut.'' |
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+ | ''See: [[DS-K101-304 Bake Temp. versus Develop Rate|DSK Bake vs. Dev rate]]'' |
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− | ''To Be Added'' |
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+ | |- |
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+ | | |
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+ | | |
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+ | |Coat-DSK101[5K]-220C |
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+ | |5.0 |
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+ | |220°C |
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+ | |''Requires: HP4=220°C'' |
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+ | |- |
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+ | | |
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+ | | |
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+ | |Coat-DSK101[5K]-210C |
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+ | |5.0 |
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+ | |210°C |
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+ | |''Requires: HP4=210°C'' |
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+ | |- |
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+ | | |
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+ | | |
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+ | |Coat-DSK101[5K]-200C |
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+ | |5.0 |
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+ | |200°C |
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+ | |''Requires: HP4=200°C'' |
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+ | |- |
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+ | | |
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+ | | |
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+ | |Coat-DSK101[5K]-185C |
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+ | |5.0 |
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+ | |185°C |
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+ | |''Requires: HP4=185°C'' |
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+ | |- |
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+ | |'''''UV6-0.8''''' |
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+ | |''Route'' |
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+ | |Coat-UV6[2K]-135C |
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+ | |2.0 |
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+ | |135°C |
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+ | |''Requires: HP1=135°C'' |
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+ | |- |
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+ | | |
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+ | | |
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+ | |Coat-UV6[2.5K]-135C |
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+ | |2.5 |
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+ | |135°C |
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+ | | |
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+ | |- |
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+ | | |
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+ | | |
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+ | |Coat-UV6[3K]-135C |
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+ | |3.0 |
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+ | |135°C |
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+ | | |
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+ | |- |
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+ | | |
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+ | | |
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+ | |Coat-UV6[3.5K]-135C |
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+ | |3.5 |
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+ | |135°C |
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+ | | |
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+ | |- |
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+ | | |
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+ | | |
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+ | |Coat-UV6[4K]-135C |
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+ | |4.0 |
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+ | |135°C |
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+ | | |
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+ | |- |
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+ | | |
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+ | | |
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+ | |Coat-UV6[5K]-135C |
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+ | |5.0 |
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+ | |135°C |
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+ | | |
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+ | |- |
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+ | | |
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+ | | |
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+ | |Coat-UV6[6K]-135C |
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+ | |6.0 |
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+ | |135°C |
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+ | | |
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+ | |- |
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+ | |'''''DS-K101 @ 220°C''''' |
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+ | '''''+ UV6''''' |
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+ | |''Chain'' |
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+ | |Coat-DSK101[5K]-220C-UV6[2K]-135C |
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+ | |''DSK: 5krpm'' |
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+ | ''UV6: 2.0krpm'' |
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+ | |DSK: 220°C |
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+ | UV6: 135°C |
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+ | |''Requires:'' |
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+ | ''– HP4=220°C'' |
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+ | ''– HP1=135°C'' |
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+ | |||
+ | ''Plan for ~10-15 min per wafer.'' |
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+ | |- |
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+ | | |
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+ | | |
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+ | |Coat-DSK101[5K]-220C-UV6[2.5K]-135C |
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+ | |''DSK: 5krpm'' |
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+ | ''UV6: 2.5krpm'' |
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+ | |''same as above'' |
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+ | |''same as above'' |
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+ | |- |
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+ | | |
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+ | | |
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+ | |Coat-DSK101[5K]-220C-UV6[3K]-135C |
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+ | |''DSK: 5krpm'' |
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+ | ''UV6: 3.0krpm'' |
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+ | |''same as above'' |
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+ | |''same as above'' |
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+ | |- |
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+ | | |
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+ | | |
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+ | |Coat-DSK101[5K]-220C-UV6[3.5K]-135C |
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+ | |''DSK: 5krpm'' |
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+ | ''UV6: 3.5krpm'' |
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+ | |''same as above'' |
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+ | |''same as above'' |
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+ | |- |
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+ | | |
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+ | | |
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+ | |Coat-DSK101[5K]-220C-UV6[4K]-135C |
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+ | |''DSK: 5krpm'' |
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+ | ''UV6: 4.0krpm'' |
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+ | |''same as above'' |
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+ | |''same as above'' |
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+ | |- |
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+ | | |
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+ | | |
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+ | |Coat-DSK101[5K]-220C-UV6[5K]-135C |
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+ | |''DSK: 5krpm'' |
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+ | ''UV6: 5.0krpm'' |
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+ | |''same as above'' |
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+ | |''same as above'' |
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+ | |- |
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+ | | |
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+ | | |
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+ | |Coat-DSK101[5K]-220C-UV6[6K]-135C |
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+ | |''DSK: 5krpm'' |
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+ | ''UV6: 6.0krpm'' |
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+ | |''same as above'' |
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+ | |''same as above'' |
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+ | |- |
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+ | |'''''DS-K101 @ 185°C''''' |
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+ | '''''+ UV6''''' |
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+ | |''Chain'' |
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+ | |Coat-DSK101[5K]-185C-UV6[2K]-135C |
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+ | |''DSK: 5krpm'' |
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+ | ''UV6: 2.0krpm'' |
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+ | |DSK: 185°C |
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+ | UV6: 135°C |
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+ | |''Requires:'' |
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+ | ''– HP4=185°C'' |
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+ | |||
+ | ''– HP1=135°C'' |
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+ | |||
+ | ''Plan for ~10-15 min per wafer.'' |
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+ | |- |
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+ | | |
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+ | | |
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+ | |Coat-DSK101[5K]-185C-UV6[2.5K]-135C |
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+ | |''DSK: 5krpm'' |
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+ | ''UV6: 2.5krpm'' |
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+ | |''same as above'' |
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+ | |''same as above'' |
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+ | |- |
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+ | | |
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+ | | |
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+ | |Coat-DSK101[5K]-185C-UV6[3K]-135C |
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+ | |''DSK: 5krpm'' |
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+ | ''UV6: 3.0krpm'' |
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+ | |''same as above'' |
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+ | |''same as above'' |
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+ | |- |
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+ | | |
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+ | | |
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+ | |Coat-DSK101[5K]-185C-UV6[3.5K]-135C |
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+ | |''DSK: 5krpm'' |
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+ | ''UV6: 3.5krpm'' |
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+ | |''same as above'' |
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+ | |''same as above'' |
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+ | |- |
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+ | | |
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+ | | |
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+ | |Coat-DSK101[5K]-185C-UV6[4K]-135C |
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+ | |''DSK: 5krpm'' |
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+ | ''UV6: 4.0krpm'' |
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+ | |''same as above'' |
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+ | |''same as above'' |
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+ | |- |
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+ | | |
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+ | | |
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+ | |Coat-DSK101[5K]-185C-UV6[5K]-135C |
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+ | |''DSK: 5krpm'' |
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+ | ''UV6: 5.0krpm'' |
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+ | |''same as above'' |
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+ | |''same as above'' |
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+ | |- |
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+ | | |
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+ | | |
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+ | |Coat-DSK101[5K]-185C-UV6[6K]-135C |
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+ | |''DSK: 5krpm'' |
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+ | ''UV6: 6.0krpm'' |
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+ | |''same as above'' |
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+ | |''same as above'' |
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+ | |- |
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+ | |'''''Hotplate Set''''' |
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+ | |''Route'' |
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+ | |''SET-HP4-220C'' |
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+ | | |
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+ | |220°C |
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+ | |''Hotplate 4 (top) between 218-222°C when done.'' |
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+ | |- |
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+ | | |
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+ | | |
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+ | |''SET-HP4-210C'' |
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+ | | |
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+ | |210°C |
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+ | | |
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+ | |- |
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+ | | |
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+ | | |
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+ | |''SET-HP4-200C'' |
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+ | | |
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+ | |200°C |
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+ | | |
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+ | |- |
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+ | | |
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+ | | |
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+ | |''SET-HP4-185C'' |
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+ | | |
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+ | |185*C |
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+ | | |
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+ | |} |
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==[[Holographic Lith/PL Setup (Custom)|Holography Recipes]]== |
==[[Holographic Lith/PL Setup (Custom)|Holography Recipes]]== |
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''The Holography recipes here use the BARC layer XHRiC-11 & the high-res. I-Line photoresist THMR-IP3600HP-D.'' |
''The Holography recipes here use the BARC layer XHRiC-11 & the high-res. I-Line photoresist THMR-IP3600HP-D.'' |
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*{{fl|AXP4000pb-Datasheet.pdf|AZP4000 (AZ4110, AZ4210, AZ4330)}} |
*{{fl|AXP4000pb-Datasheet.pdf|AZP4000 (AZ4110, AZ4210, AZ4330)}} |
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+ | *{{Fl|Az_p4620_photoresist_data_package.pdf|AZ P4620}} |
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*{{fl|OCG825-Positive-Resist-Datasheet.pdf|OCG825}} |
*{{fl|OCG825-Positive-Resist-Datasheet.pdf|OCG825}} |
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*{{fl|SPR220-Positive-Resist-Datasheet.pdf|SPR220 (SPR220-3, SPR220-7)}} |
*{{fl|SPR220-Positive-Resist-Datasheet.pdf|SPR220 (SPR220-3, SPR220-7)}} |
Revision as of 14:38, 8 November 2022
Table of Contents |
---|
Photolithography Processes
|
Photolithography Chemicals/Materials
|
General Photolithography Techniques
- HMDS Process for Improving Adhesion
- Use these procedures if you are finding poor adhesion PR lifting-off), or for chemicals (like BHF) that attack the PR adhesion interface strongly.
- Edge-Bead Removal Techniques
- These techniques are required for loading full-wafers into etchers that use top-side clamps, to prevent photoresist from sticking to the clamp (and potentially destroying your wafer).
- For contact lithography, this improves the proximity of the mask plate and sample, improving resolution. For some projection systems, such as the Maskless Aligner, EBR can help with autofocus issues.
- Photoresist reflow (MicroChem), to create slanted sidewalls or curved surfaces.
Photolithography Recipes
- R: Recipe is available. Clicking this link will take you to the recipe.
- A: Material is available for use, but no recipes are provided.
Click the tool title to go to recipes for that tool.
Click the photoresist title to get the datasheet, also found in Stocked Chemicals + Datasheets.
Lift-Off Recipes
- Lift-Off Description/Tutorial
- How it works, process limits and considerations for designing your process
- I-Line Lift-Off: Bi-Layer Process with LOL2000 Underlayer
- Single Expose/Develop process for simplicity
- Up to ~130nm metal thickness & ≥500nm-1000nm gap between metal.
- Can use any I-Line litho tool (GCA Stepper, Contact aligner, MLA)
- I-Line Lift-Off: Bi-Layer Process with PMGI Underlayer and Contact Aligner
- Multiple processes for Metal thicknesses ~800nm to ~2.5µm
- Uses multiple DUV Flood exposure/develop cycles to create undercut.
- Can be transferred to other I-Line litho tools (Stepper, MLA etc.)
- DUV Lift-Off: UV6 Imaging Resist + PMGI Underlayer
- Single-expose/develop process
- Up to ~65nm metal thickness & ~350nm gap between metal
- Use thicker PMGI for thicker metals
E-Beam Lithography Recipes (JEOL JBX-6300FS)
- Under Development.
FIB Lithography Recipes (Raith Velion)
To Be Added
Automated Coat/Develop System Recipes (S-Cubed Flexi)
Recipes pre-loaded on the S-Cubed Flexi automated coat/bake/develop system. Only staff may write new recipes, contact the tool supervisor for more info.
Coating Material | Route/Chain | Name: User: "UCSB Users" | Spin Speed (krpm) | Bake Temp | Notes |
DS-K101 | Route | DSK101's Develop Rate depends on Bake temp - you can use this to control undercut. | |||
Coat-DSK101[5K]-220C | 5.0 | 220°C | Requires: HP4=220°C | ||
Coat-DSK101[5K]-210C | 5.0 | 210°C | Requires: HP4=210°C | ||
Coat-DSK101[5K]-200C | 5.0 | 200°C | Requires: HP4=200°C | ||
Coat-DSK101[5K]-185C | 5.0 | 185°C | Requires: HP4=185°C | ||
UV6-0.8 | Route | Coat-UV6[2K]-135C | 2.0 | 135°C | Requires: HP1=135°C |
Coat-UV6[2.5K]-135C | 2.5 | 135°C | |||
Coat-UV6[3K]-135C | 3.0 | 135°C | |||
Coat-UV6[3.5K]-135C | 3.5 | 135°C | |||
Coat-UV6[4K]-135C | 4.0 | 135°C | |||
Coat-UV6[5K]-135C | 5.0 | 135°C | |||
Coat-UV6[6K]-135C | 6.0 | 135°C | |||
DS-K101 @ 220°C
+ UV6 |
Chain | Coat-DSK101[5K]-220C-UV6[2K]-135C | DSK: 5krpm
UV6: 2.0krpm |
DSK: 220°C
UV6: 135°C |
Requires:
– HP4=220°C – HP1=135°C Plan for ~10-15 min per wafer. |
Coat-DSK101[5K]-220C-UV6[2.5K]-135C | DSK: 5krpm
UV6: 2.5krpm |
same as above | same as above | ||
Coat-DSK101[5K]-220C-UV6[3K]-135C | DSK: 5krpm
UV6: 3.0krpm |
same as above | same as above | ||
Coat-DSK101[5K]-220C-UV6[3.5K]-135C | DSK: 5krpm
UV6: 3.5krpm |
same as above | same as above | ||
Coat-DSK101[5K]-220C-UV6[4K]-135C | DSK: 5krpm
UV6: 4.0krpm |
same as above | same as above | ||
Coat-DSK101[5K]-220C-UV6[5K]-135C | DSK: 5krpm
UV6: 5.0krpm |
same as above | same as above | ||
Coat-DSK101[5K]-220C-UV6[6K]-135C | DSK: 5krpm
UV6: 6.0krpm |
same as above | same as above | ||
DS-K101 @ 185°C
+ UV6 |
Chain | Coat-DSK101[5K]-185C-UV6[2K]-135C | DSK: 5krpm
UV6: 2.0krpm |
DSK: 185°C
UV6: 135°C |
Requires:
– HP4=185°C – HP1=135°C Plan for ~10-15 min per wafer. |
Coat-DSK101[5K]-185C-UV6[2.5K]-135C | DSK: 5krpm
UV6: 2.5krpm |
same as above | same as above | ||
Coat-DSK101[5K]-185C-UV6[3K]-135C | DSK: 5krpm
UV6: 3.0krpm |
same as above | same as above | ||
Coat-DSK101[5K]-185C-UV6[3.5K]-135C | DSK: 5krpm
UV6: 3.5krpm |
same as above | same as above | ||
Coat-DSK101[5K]-185C-UV6[4K]-135C | DSK: 5krpm
UV6: 4.0krpm |
same as above | same as above | ||
Coat-DSK101[5K]-185C-UV6[5K]-135C | DSK: 5krpm
UV6: 5.0krpm |
same as above | same as above | ||
Coat-DSK101[5K]-185C-UV6[6K]-135C | DSK: 5krpm
UV6: 6.0krpm |
same as above | same as above | ||
Hotplate Set | Route | SET-HP4-220C | 220°C | Hotplate 4 (top) between 218-222°C when done. | |
SET-HP4-210C | 210°C | ||||
SET-HP4-200C | 200°C | ||||
SET-HP4-185C | 185*C |
Holography Recipes
The Holography recipes here use the BARC layer XHRiC-11 & the high-res. I-Line photoresist THMR-IP3600HP-D.
- Standard Holography Process - on SiO2 on Si
- Holography Process Variations - Set-up Angle - Etching into SiO2 and Si
- Etch SiO2 Nano-structure - Changing Side-wall Angle - Etching into Si with a different line-width
- Reduce SiO2 Nanowire Diameter - Thermal Oxidation - Vapor HF Etching
Low-K Spin-On Dielectric Recipes
Chemicals Stocked + Datasheets
The following is a list of the lithography chemicals we stock in the lab, with links to the datasheets for each. The datasheets will often have important processing info such as spin-speed vs. thickness curves, typical process parameters, bake temps/times etc.