Difference between revisions of "Lithography Recipes"

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(link to Auto-coater recipes)
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__NOTOC__
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__NOTOC__
 
{| class="wikitable"
  
{| class="wikitable"
 
|+
  
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|-
  
|-
 
|
  
|
−
=== '''<big>Photolithography Processes</big>''' ===
 +
==='''<big>Photolithography Processes</big>'''===
  +
 
#'''UV Optical Lithography'''
 
#'''UV Optical Lithography'''
 
#*[[#PositivePR |'''Stocked Lithography Chemical + Datasheets''']]
  
#*[[#PositivePR |'''Stocked Lithography Chemical + Datasheets''']]
 
#**''Lists all stocked photolith. chemicals, PRs, strippers, developers, and links to the chemical's application notes/datasheet, which detail the spin curves and nominal processes.''
  
#**''Lists all stocked photolith. chemicals, PRs, strippers, developers, and links to the chemical's application notes/datasheet, which detail the spin curves and nominal processes.''
 
#*[[#Photolithography_Recipes |'''Photo Lithography Recipe section''']]
  
#*[[#Photolithography_Recipes |'''Photo Lithography Recipe section''']]
−
#**''Starting recipes (spin, bake, exposure, develop etc.) for all photolith. tools.''
+
#**''Starting recipes (spin, bake, exposure, develop etc.) for all photolith. tools.''
 
#**''Substrate/surface materials/pattern size can affect process parameters. Users may need to run Focus/Exposure Arrays/Matrix (FEA's/FEM's) with these processes to achieve high-resolution.''
  
#**''Substrate/surface materials/pattern size can affect process parameters. Users may need to run Focus/Exposure Arrays/Matrix (FEA's/FEM's) with these processes to achieve high-resolution.''
 
#**[[Contact Alignment Recipes|<u>Contact Aligner Recipes</u>]]
  
#**[[Contact Alignment Recipes|<u>Contact Aligner Recipes</u>]]
Line 23: Line 24:
 
#***[[Lithography Recipes#E-Beam Lithography Recipes|JEOL JBX-6300FS EBL]]
  
#***[[Lithography Recipes#E-Beam Lithography Recipes|JEOL JBX-6300FS EBL]]
 
#***[[Lithography Recipes#FIB Lithography Recipes .28Raith Velion.29|Raith Velion FIB]]
  
#***[[Lithography Recipes#FIB Lithography Recipes .28Raith Velion.29|Raith Velion FIB]]
  +
#**[[Lithography Recipes#Automated Coat.2FDevelop System Recipes .28S-Cubed Flexi.29|Automated Coater Recipes (S-Cubed Flexi)]]
  +
#[[Lithography Recipes#General Photolithography Techniques|'''General Photolithography Techniques''']]
  +
#*''Techniques for improving litho. or solving common photolith. problems.''
 
#'''[[Lithography Recipes#Lift-Off Recipes|Lift-Off Recipes]]'''
  
#'''[[Lithography Recipes#Lift-Off Recipes|Lift-Off Recipes]]'''
 
#*''Verified Recipes for lift-off using various photolith. tools''
  
#*''Verified Recipes for lift-off using various photolith. tools''
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#**''Provided for reference, also showing starting recipes and usage info.''
  
#**''Provided for reference, also showing starting recipes and usage info.''
 
#'''[[Lithography Recipes#Holography Recipes|Holography]]'''
  
#'''[[Lithography Recipes#Holography Recipes|Holography]]'''
−
#*''For 1-D and 2-D gratings with 220nm nominal period, available on substrates up to 1 inch square.''
+
#*''For 1-D and 2-D gratings with 220nm nominal period, available on substrates up to 1 inch square.''
 
#*''Recipes for silicon substrates are provided, and have been translated to other substrates by users.''
  
#*''Recipes for silicon substrates are provided, and have been translated to other substrates by users.''
  +
#*''Datasheets are provided with starting recipes and usage info.''
−
#'''[[#NanoImprinting |Nanoimprinting Resists]]'''
  
  +
#[[Lithography Recipes#Edge-Bead Removal|'''Edge-Bead Removal''']]
−
#*''Datasheets are provided with starting recipes and usage info.''
 
  +
#*''Edge photoresist removal methods needed for clamp-based etchers''
  +
#*''Improves resolution for contact lithography''
 
|-
  
|-
 
|
  
|
  +
−
=== '''<big>Photolithography Chemicals/Materials</big>''' ===
  
  +
==='''<big>Photolithography Chemicals/Materials</big>'''===
  +
 
#'''[[#Underlayers |Underlayers]]'''
  
#'''[[#Underlayers |Underlayers]]'''
−
#*''These are used beneath resists for both adhesive purposes and to enable bi-layer lift-off profiles for use with photoresist.''
+
#*''These are used beneath resists for both adhesive purposes and to enable bi-layer lift-off profiles for use with photoresist.''
 
#*''Datasheets are provided.''
  
#*''Datasheets are provided.''
 
#'''[[#AntiReflectionCoatings |Anti-Reflection Coatings]]''':
 
#'''[[#AntiReflectionCoatings |Anti-Reflection Coatings]]''':
 
#*[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.
  
#*[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.
−
#*''Bottom Anti-Reflection Coatings (BARC) are used in the stepper systems, underneath the resists to eliminate substrate reflections that can affect resolution and repeatability for small, near resolution limited, feature sizes.''
+
#*''Bottom Anti-Reflection Coatings (BARC) are used in the stepper systems, underneath the resists to eliminate substrate reflections that can affect resolution and repeatability for small, near resolution limited, feature sizes.''
 
#*''Datasheets are provided for reference on use of the materials.''
  
#*''Datasheets are provided for reference on use of the materials.''
 
#'''[[#ContrastEnhancement |Contrast Enhancement Materials (CEM)]]'''
  
#'''[[#ContrastEnhancement |Contrast Enhancement Materials (CEM)]]'''
Line 51: Line 59:
 
#*''Datasheets provided with usage info.''
  
#*''Datasheets provided with usage info.''
 
#'''[[#AdhesionPromoters |Adhesion Promoters]]'''
  
#'''[[#AdhesionPromoters |Adhesion Promoters]]'''
−
#*''These are used to improve wetting of photoresists to your substrate.''
+
#*''These are used to improve wetting of photoresists to your substrate.''
 
#*''Datasheets are provided on use of these materials.''
  
#*''Datasheets are provided on use of these materials.''
 
#'''[[#SpinOnDielectrics |Low-K Spin-on Dielectrics]]'''
 
#'''[[#SpinOnDielectrics |Low-K Spin-on Dielectrics]]'''
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#*''Remover and Photoresist Strippers are used to dissolve PR during lift-off or after etching.''
  
#*''Remover and Photoresist Strippers are used to dissolve PR during lift-off or after etching.''
 
|}
  
|}
  +
  +
==General Photolithography Techniques==
  +
  +
*[[Photolithography - Improving Adhesion Photoresist Adhesion|'''HMDS Process for Improving Adhesion''']]
  +
**''Use these procedures if you are finding poor adhesion PR lifting-off), or for chemicals (like BHF) that attack the PR adhesion interface strongly.''
  +
*[[Photolithography - Manual Edge-Bead Removal Techniques|'''Edge-Bead Removal Techniques''']]
  +
**''These techniques are required for loading full-wafers into etchers that use top-side clamps, to prevent photoresist from sticking to the clamp (and potentially destroying your wafer).''
  +
**''For contact lithography, this improves the proximity of the mask plate and sample, improving resolution. For some projection systems, such as the [[Maskless Aligner (Heidelberg MLA150)|Maskless Aligner]], EBR can help with autofocus issues.''
  +
*[https://www.microchemicals.com/technical_information/reflow_photoresist.pdf '''Photoresist reflow (MicroChem)'''], to create slanted sidewalls or curved surfaces.
   
 
==Photolithography Recipes==
  
==Photolithography Recipes==
   
  +
*<small>'''R''': ''Recipe is available. Clicking this link will take you to the recipe.''</small>
−
{{Recipe Table Explanation}}
 
  +
*<small>'''A''': ''Material is available for use, but no recipes are provided.''</small>
  +
 
''Click the tool title to go to recipes for that tool.''
 
''Click the tool title to go to recipes for that tool.''
   
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|-
 
|-
−
| bgcolor="#EAECF0" | <!-- INTENTIONALLY BLANK -->
 +
| bgcolor="#EAECF0" |<!-- INTENTIONALLY BLANK -->
 
! colspan="2" align="center" |'''[[Contact Alignment Recipes|<big>Contact Aligner Recipes</big>]]'''
  
! colspan="2" align="center" |'''[[Contact Alignment Recipes|<big>Contact Aligner Recipes</big>]]'''
 
! colspan="3" align="center" |'''[[Stepper Recipes|<big>Stepper Recipes</big>]]'''
  
! colspan="3" align="center" |'''[[Stepper Recipes|<big>Stepper Recipes</big>]]'''
Line 115: Line 134:
 
|- bgcolor="EEFFFF"
  
|- bgcolor="EEFFFF"
 
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/8/8b/OCG825-Positive-Resist-Datasheet.pdf OCG 825-35CS]
  
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/8/8b/OCG825-Positive-Resist-Datasheet.pdf OCG 825-35CS]
−
| A
 +
|A
−
| A
 +
|A
−
| A
 +
|A
−
| A
 +
|A
 
|
  
|
 
|A
  
|A
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|-
  
|-
 
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/7/78/SU-8-2015-revA.pdf SU-8 2005,2010,2015]
  
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/7/78/SU-8-2015-revA.pdf SU-8 2005,2010,2015]
−
| A
 +
|A
−
| {{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}
 +
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}
−
| A
 +
|A
−
| A
 +
|A
 
|
  
|
 
|A
  
|A
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|A
  
|A
 
|- bgcolor="EEFFFF"
  
|- bgcolor="EEFFFF"
−
! bgcolor="#D0E7FF" align="center" | '''Anti-Reflection Coatings'''
 +
! bgcolor="#D0E7FF" align="center" |'''Anti-Reflection Coatings'''
 
{{LithRecipe Table}}
 
{{LithRecipe Table}}
 
|-
  
|-
−
|bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/33/XHRiC-Anti-Reflective-Coating.pdf XHRiC-11]
 +
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/33/XHRiC-Anti-Reflective-Coating.pdf XHRiC-11]
 
|
  
|
 
|
  
|
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|
  
|
 
|
  
|
−
|{{rl|Stepper Recipes|DUV-42P}}
 +
|{{rl|Stepper Recipes|DUV-42P-6}}
  +
|
 
|
  
|
 
|-
  
|-
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*{{fl|Liftoff-Techniques.pdf|Lift-Off Description/Tutorial}}
  
*{{fl|Liftoff-Techniques.pdf|Lift-Off Description/Tutorial}}
 
**How it works, process limits and considerations for designing your process
  
**How it works, process limits and considerations for designing your process
  +
*[[Lift-Off with I-Line Imaging Resist + LOL2000 Underlayer|I-Line Lift-Off: Bi-Layer Process with LOL2000 Underlayer]]
  +
**''Single Expose/Develop process for simplicity''
  +
**''Up to ~130nm metal thickness & ≥500nm-1000nm gap between metal.''
  +
**''Can use any I-Line litho tool (GCA Stepper, Contact aligner, MLA)''
 
*{{fl|Bi-LayerContactprocesswithPMGI.pdf|I-Line Lift-Off: Bi-Layer Process with PMGI Underlayer and Contact Aligner}}
  
*{{fl|Bi-LayerContactprocesswithPMGI.pdf|I-Line Lift-Off: Bi-Layer Process with PMGI Underlayer and Contact Aligner}}
  +
**''Multiple processes for Metal thicknesses ~800nm to ~2.5µm''
  +
**''Uses multiple DUV Flood exposure/develop cycles to create undercut.''
  +
**''Can be transferred to other I-Line litho tools (Stepper, MLA etc.)''
 
*[[Lift-Off with DUV Imaging + PMGI Underlayer|DUV Lift-Off: UV6 Imaging Resist + PMGI Underlayer]]
  
*[[Lift-Off with DUV Imaging + PMGI Underlayer|DUV Lift-Off: UV6 Imaging Resist + PMGI Underlayer]]
  +
**''Single-expose/develop process''
  +
**''Up to ~65nm metal thickness & ~350nm gap between metal''
  +
**''Use thicker PMGI for thicker metals''
   
 
==[[E-Beam Lithography System (JEOL JBX-6300FS)|E-Beam Lithography Recipes (JEOL JBX-6300FS)]]==
  
==[[E-Beam Lithography System (JEOL JBX-6300FS)|E-Beam Lithography Recipes (JEOL JBX-6300FS)]]==
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*Under Development.
  
*Under Development.
   
−
== [[Focused Ion-Beam Lithography (Raith Velion)|FIB Lithography Recipes (Raith Velion)]] ==
 +
==[[Focused Ion-Beam Lithography (Raith Velion)|FIB Lithography Recipes (Raith Velion)]]==
 
''To Be Added''
  
''To Be Added''
   
 
==[[Automated Coat/Develop System (S-Cubed Flexi)|Automated Coat/Develop System Recipes (S-Cubed Flexi)]]==
  
==[[Automated Coat/Develop System (S-Cubed Flexi)|Automated Coat/Develop System Recipes (S-Cubed Flexi)]]==
 
Recipes pre-loaded on the S-Cubed Flexi automated coat/bake/develop system. Only staff may write new recipes, contact the tool supervisor for more info.
  
Recipes pre-loaded on the S-Cubed Flexi automated coat/bake/develop system. Only staff may write new recipes, contact the tool supervisor for more info.
  +
{| class="wikitable"
  +
|+''Ask [[Tony Bosch|Staff]] if you need a new recipe.''
  +
|'''''<u>Coating Material</u>'''''
  +
|'''''<u>Route/Chain</u>'''''
  +
|'''''<u>Name</u>''': User: "UCSB Users"''
  +
|'''''<u>Spin Speed (krpm)</u>'''''
  +
|'''''<u>Bake Temp</u>'''''
  +
|'''''<u>Notes</u>'''''
  +
|-
  +
|'''''DS-K101'''''
  +
|''Route''
  +
| colspan="4" |''DSK101's Develop Rate depends on Bake temp - you can use this to control undercut.''
   
  +
''See: [[DS-K101-304 Bake Temp. versus Develop Rate|DSK Bake vs. Dev rate]]''
−
''To Be Added''
  
  +
|-
  +
|
  +
|
  +
|Coat-DSK101[5K]-220C
  +
|5.0
  +
|220°C
  +
|''Requires: HP4=220°C''
  +
|-
  +
|
  +
|
  +
|Coat-DSK101[5K]-210C
  +
|5.0
  +
|210°C
  +
|''Requires: HP4=210°C''
  +
|-
  +
|
  +
|
  +
|Coat-DSK101[5K]-200C
  +
|5.0
  +
|200°C
  +
|''Requires: HP4=200°C''
  +
|-
  +
|
  +
|
  +
|Coat-DSK101[5K]-185C
  +
|5.0
  +
|185°C
  +
|''Requires: HP4=185°C''
  +
|-
  +
|'''''UV6-0.8'''''
  +
|''Route''
  +
|Coat-UV6[2K]-135C
  +
|2.0
  +
|135°C
  +
|''Requires: HP1=135°C''
  +
|-
  +
|
  +
|
  +
|Coat-UV6[2.5K]-135C
  +
|2.5
  +
|135°C
  +
|
  +
|-
  +
|
  +
|
  +
|Coat-UV6[3K]-135C
  +
|3.0
  +
|135°C
  +
|
  +
|-
  +
|
  +
|
  +
|Coat-UV6[3.5K]-135C
  +
|3.5
  +
|135°C
  +
|
  +
|-
  +
|
  +
|
  +
|Coat-UV6[4K]-135C
  +
|4.0
  +
|135°C
  +
|
  +
|-
  +
|
  +
|
  +
|Coat-UV6[5K]-135C
  +
|5.0
  +
|135°C
  +
|
  +
|-
  +
|
  +
|
  +
|Coat-UV6[6K]-135C
  +
|6.0
  +
|135°C
  +
|
  +
|-
  +
|'''''DS-K101 @ 220°C'''''
  +
'''''+ UV6'''''
  +
|''Chain''
  +
|Coat-DSK101[5K]-220C-UV6[2K]-135C
  +
|''DSK: 5krpm''
  +
''UV6: 2.0krpm''
  +
|DSK: 220°C
  +
UV6: 135°C
  +
|''Requires:''
  +
''– HP4=220°C''
   
  +
''– HP1=135°C''
−
==[[Nano-Imprint (Nanonex NX2000)|Nanoimprinting Recipes]]==
  
   
  +
''Plan for ~10-15 min per wafer.''
−
*{{fl|Thermal-Nanoimprint-Process-Tutorial-revA.pdf|Thermal Nanoimprint Process and Tutorial}}
  
  +
|-
−
*{{fl|Nanoinprint-Lithopgraphy-UV-Low-Pressure-Temperature-Ormostamp-PDMS-RevA.docx|UV-Cure Low Temp, Low Pressure, Soft-Stamp Nanoimprint Process}}
  
  +
|
  +
|
  +
|Coat-DSK101[5K]-220C-UV6[2.5K]-135C
  +
|''DSK: 5krpm''
  +
''UV6: 2.5krpm''
  +
|''same as above''
  +
|''same as above''
  +
|-
  +
|
  +
|
  +
|Coat-DSK101[5K]-220C-UV6[3K]-135C
  +
|''DSK: 5krpm''
  +
''UV6: 3.0krpm''
  +
|''same as above''
  +
|''same as above''
  +
|-
  +
|
  +
|
  +
|Coat-DSK101[5K]-220C-UV6[3.5K]-135C
  +
|''DSK: 5krpm''
  +
''UV6: 3.5krpm''
  +
|''same as above''
  +
|''same as above''
  +
|-
  +
|
  +
|
  +
|Coat-DSK101[5K]-220C-UV6[4K]-135C
  +
|''DSK: 5krpm''
  +
''UV6: 4.0krpm''
  +
|''same as above''
  +
|''same as above''
  +
|-
  +
|
  +
|
  +
|Coat-DSK101[5K]-220C-UV6[5K]-135C
  +
|''DSK: 5krpm''
  +
''UV6: 5.0krpm''
  +
|''same as above''
  +
|''same as above''
  +
|-
  +
|
  +
|
  +
|Coat-DSK101[5K]-220C-UV6[6K]-135C
  +
|''DSK: 5krpm''
  +
''UV6: 6.0krpm''
  +
|''same as above''
  +
|''same as above''
  +
|-
  +
|'''''DS-K101 @ 185°C'''''
  +
'''''+ UV6'''''
  +
|''Chain''
  +
|Coat-DSK101[5K]-185C-UV6[2K]-135C
  +
|''DSK: 5krpm''
  +
''UV6: 2.0krpm''
  +
|DSK: 185°C
  +
UV6: 135°C
  +
|''Requires:''
  +
''– HP4=185°C''
   
  +
''– HP1=135°C''
  +
  +
''Plan for ~10-15 min per wafer.''
  +
|-
  +
|
  +
|
  +
|Coat-DSK101[5K]-185C-UV6[2.5K]-135C
  +
|''DSK: 5krpm''
  +
''UV6: 2.5krpm''
  +
|''same as above''
  +
|''same as above''
  +
|-
  +
|
  +
|
  +
|Coat-DSK101[5K]-185C-UV6[3K]-135C
  +
|''DSK: 5krpm''
  +
''UV6: 3.0krpm''
  +
|''same as above''
  +
|''same as above''
  +
|-
  +
|
  +
|
  +
|Coat-DSK101[5K]-185C-UV6[3.5K]-135C
  +
|''DSK: 5krpm''
  +
''UV6: 3.5krpm''
  +
|''same as above''
  +
|''same as above''
  +
|-
  +
|
  +
|
  +
|Coat-DSK101[5K]-185C-UV6[4K]-135C
  +
|''DSK: 5krpm''
  +
''UV6: 4.0krpm''
  +
|''same as above''
  +
|''same as above''
  +
|-
  +
|
  +
|
  +
|Coat-DSK101[5K]-185C-UV6[5K]-135C
  +
|''DSK: 5krpm''
  +
''UV6: 5.0krpm''
  +
|''same as above''
  +
|''same as above''
  +
|-
  +
|
  +
|
  +
|Coat-DSK101[5K]-185C-UV6[6K]-135C
  +
|''DSK: 5krpm''
  +
''UV6: 6.0krpm''
  +
|''same as above''
  +
|''same as above''
  +
|-
  +
|'''''Hotplate Set'''''
  +
|''Route''
  +
|''SET-HP4-220C''
  +
|
  +
|220°C
  +
|''Hotplate 4 (top) between 218-222°C when done.''
  +
|-
  +
|
  +
|
  +
|''SET-HP4-210C''
  +
|
  +
|210°C
  +
|
  +
|-
  +
|
  +
|
  +
|''SET-HP4-200C''
  +
|
  +
|200°C
  +
|
  +
|-
  +
|
  +
|
  +
|''SET-HP4-185C''
  +
|
  +
|185*C
  +
|
  +
|}
 
==[[Holographic Lith/PL Setup (Custom)|Holography Recipes]]==
  
==[[Holographic Lith/PL Setup (Custom)|Holography Recipes]]==
 
''The Holography recipes here use the BARC layer XHRiC-11 & the high-res. I-Line photoresist THMR-IP3600HP-D.''
  
''The Holography recipes here use the BARC layer XHRiC-11 & the high-res. I-Line photoresist THMR-IP3600HP-D.''
  +
 
*{{fl|Holography_Process_for_1D-lines_and_2D-dots_%28ARC-11_%26_THMR-IP3600HP-D%29-updated-4-8-2021.pdf|Standard Holography Process - on SiO2 on Si}}
  
*{{fl|Holography_Process_for_1D-lines_and_2D-dots_%28ARC-11_%26_THMR-IP3600HP-D%29-updated-4-8-2021.pdf|Standard Holography Process - on SiO2 on Si}}
 
*{{fl|Holography-Process-Variation-revA.pdf|Holography Process Variations - Set-up Angle - Etching into SiO2 and Si}}
  
*{{fl|Holography-Process-Variation-revA.pdf|Holography Process Variations - Set-up Angle - Etching into SiO2 and Si}}
Line 340: Line 609:
   
 
*{{fl|AXP4000pb-Datasheet.pdf|AZP4000 (AZ4110, AZ4210, AZ4330)}}
  
*{{fl|AXP4000pb-Datasheet.pdf|AZP4000 (AZ4110, AZ4210, AZ4330)}}
  +
*{{Fl|Az_p4620_photoresist_data_package.pdf|AZ P4620}}
 
*{{fl|OCG825-Positive-Resist-Datasheet.pdf|OCG825}}
  
*{{fl|OCG825-Positive-Resist-Datasheet.pdf|OCG825}}
 
*{{fl|SPR220-Positive-Resist-Datasheet.pdf|SPR220 (SPR220-3, SPR220-7)}}
  
*{{fl|SPR220-Positive-Resist-Datasheet.pdf|SPR220 (SPR220-3, SPR220-7)}}
Line 396: Line 666:
   
 
*{{fl|XHRiC-Anti-Reflective-Coating.pdf|XHRiC-11 (i-line)}}
  
*{{fl|XHRiC-Anti-Reflective-Coating.pdf|XHRiC-11 (i-line)}}
−
*{{fl|DUV42P-Anti-Reflective-Coating.pdf|DUV42P (DUV) (For AR2 replacement)}}
 +
*{{fl|DUV42P-Anti-Reflective-Coating.pdf|DUV42P-6 (DUV) (For AR2 replacement)}}
 
*{{fl|DS-K101-304-Anti-Reflective-Coating.pdf|DS-K101-304 (DUV developable BARC)}}
  
*{{fl|DS-K101-304-Anti-Reflective-Coating.pdf|DS-K101-304 (DUV developable BARC)}}
   

Revision as of 14:38, 8 November 2022

Table of Contents

Photolithography Processes

  1. UV Optical Lithography
  2. General Photolithography Techniques
    • Techniques for improving litho. or solving common photolith. problems.
  3. Lift-Off Recipes
    • Verified Recipes for lift-off using various photolith. tools
    • General educational description of this technique and it's limitations/considerations.
  4. E-beam Lithography
  5. Holography
    • For 1-D and 2-D gratings with 220nm nominal period, available on substrates up to 1 inch square.
    • Recipes for silicon substrates are provided, and have been translated to other substrates by users.
    • Datasheets are provided with starting recipes and usage info.
  6. Edge-Bead Removal
    • Edge photoresist removal methods needed for clamp-based etchers
    • Improves resolution for contact lithography

Photolithography Chemicals/Materials

  1. Underlayers
    • These are used beneath resists for both adhesive purposes and to enable bi-layer lift-off profiles for use with photoresist.
    • Datasheets are provided.
  2. Anti-Reflection Coatings:
    • The Photoresist Recipes section contains recipes using these materials.
    • Bottom Anti-Reflection Coatings (BARC) are used in the stepper systems, underneath the resists to eliminate substrate reflections that can affect resolution and repeatability for small, near resolution limited, feature sizes.
    • Datasheets are provided for reference on use of the materials.
  3. Contrast Enhancement Materials (CEM)
    • The Photoresist Recipes section contains recipes using these materials.
    • Used for resolution enhancement. Not for use in contact aligners, typically used on I-Line Steppers.
    • Datasheets provided with usage info.
  4. Adhesion Promoters
    • These are used to improve wetting of photoresists to your substrate.
    • Datasheets are provided on use of these materials.
  5. Low-K Spin-on Dielectrics
  6. Developers and Removers
    • Datasheets provided for reference.
    • Remover and Photoresist Strippers are used to dissolve PR during lift-off or after etching.

General Photolithography Techniques

  • HMDS Process for Improving Adhesion
    • Use these procedures if you are finding poor adhesion PR lifting-off), or for chemicals (like BHF) that attack the PR adhesion interface strongly.
  • Edge-Bead Removal Techniques
    • These techniques are required for loading full-wafers into etchers that use top-side clamps, to prevent photoresist from sticking to the clamp (and potentially destroying your wafer).
    • For contact lithography, this improves the proximity of the mask plate and sample, improving resolution. For some projection systems, such as the Maskless Aligner, EBR can help with autofocus issues.
  • Photoresist reflow (MicroChem), to create slanted sidewalls or curved surfaces.

Photolithography Recipes

  • R: Recipe is available. Clicking this link will take you to the recipe.
  • A: Material is available for use, but no recipes are provided.

Click the tool title to go to recipes for that tool.

Click the photoresist title to get the datasheet, also found in Stocked Chemicals + Datasheets.

Photolithography Recipes
Contact Aligner Recipes Stepper Recipes Direct-Write Litho. Recipes
Positive Resists SUSS MJB-3 SUSS MA-6 Stepper 1
(GCA 6300) 		Stepper 2
(AutoStep 200) 		Stepper 3
(ASML DUV) 		MLA150
(Heidelberg)
AZ4110 R R A A R
AZ4210 R R A A A
AZ4330RS R R A A R
AZ4620 A A A A A
OCG 825-35CS A A A A A
SPR 955 CM-0.9 A R R R R
SPR 955 CM-1.8 A A R R A
SPR 220-3.0 R R R R R
SPR 220-7.0 R R R R A
THMR-IP3600 HP D A A R
UV6-0.8 R
UV210-0.3 R
UV26-2.5 A
Negative Resists SUSS MJB-3 SUSS MA-6 Stepper 1
(GCA 6300) 		Stepper 2
(AutoStep 200) 		Stepper 3
(ASML DUV) 		MLA150
(Heidelberg)
AZ5214-EIR R R R R R
AZnLOF 2020 R R R R R
AZnLOF 2035 A A A A A
AZnLOF 2070 A A A A A
AZnLOF 5510 A A R R A
UVN30-0.8 R
SU-8 2005,2010,2015 A R A A A
SU-8 2075 A A A A R
NR9-1000,3000,6000PY R R A R A
Anti-Reflection Coatings SUSS MJB-3 SUSS MA-6 Stepper 1
(GCA 6300) 		Stepper 2
(AutoStep 200) 		Stepper 3
(ASML DUV) 		MLA150
(Heidelberg)
XHRiC-11 A A A
DUV42-P R
DS-K101-304 R
SUSS MJB-3 SUSS MA-6 Stepper 1
(GCA 6300) 		Stepper 2
(AutoStep 200) 		Stepper 3
(ASML DUV) 		MLA150
(Heidelberg)

Lift-Off Recipes

E-Beam Lithography Recipes (JEOL JBX-6300FS)

  • Under Development.

FIB Lithography Recipes (Raith Velion)

To Be Added

Automated Coat/Develop System Recipes (S-Cubed Flexi)

Recipes pre-loaded on the S-Cubed Flexi automated coat/bake/develop system. Only staff may write new recipes, contact the tool supervisor for more info.

Ask Staff if you need a new recipe.
Coating Material Route/Chain Name: User: "UCSB Users" Spin Speed (krpm) Bake Temp Notes
DS-K101 Route DSK101's Develop Rate depends on Bake temp - you can use this to control undercut.

See: DSK Bake vs. Dev rate

Coat-DSK101[5K]-220C 5.0 220°C Requires: HP4=220°C
Coat-DSK101[5K]-210C 5.0 210°C Requires: HP4=210°C
Coat-DSK101[5K]-200C 5.0 200°C Requires: HP4=200°C
Coat-DSK101[5K]-185C 5.0 185°C Requires: HP4=185°C
UV6-0.8 Route Coat-UV6[2K]-135C 2.0 135°C Requires: HP1=135°C
Coat-UV6[2.5K]-135C 2.5 135°C
Coat-UV6[3K]-135C 3.0 135°C
Coat-UV6[3.5K]-135C 3.5 135°C
Coat-UV6[4K]-135C 4.0 135°C
Coat-UV6[5K]-135C 5.0 135°C
Coat-UV6[6K]-135C 6.0 135°C
DS-K101 @ 220°C

+ UV6

Chain Coat-DSK101[5K]-220C-UV6[2K]-135C DSK: 5krpm

UV6: 2.0krpm

DSK: 220°C

UV6: 135°C

Requires:

– HP4=220°C

– HP1=135°C

Plan for ~10-15 min per wafer.

Coat-DSK101[5K]-220C-UV6[2.5K]-135C DSK: 5krpm

UV6: 2.5krpm

same as above same as above
Coat-DSK101[5K]-220C-UV6[3K]-135C DSK: 5krpm

UV6: 3.0krpm

same as above same as above
Coat-DSK101[5K]-220C-UV6[3.5K]-135C DSK: 5krpm

UV6: 3.5krpm

same as above same as above
Coat-DSK101[5K]-220C-UV6[4K]-135C DSK: 5krpm

UV6: 4.0krpm

same as above same as above
Coat-DSK101[5K]-220C-UV6[5K]-135C DSK: 5krpm

UV6: 5.0krpm

same as above same as above
Coat-DSK101[5K]-220C-UV6[6K]-135C DSK: 5krpm

UV6: 6.0krpm

same as above same as above
DS-K101 @ 185°C

+ UV6

Chain Coat-DSK101[5K]-185C-UV6[2K]-135C DSK: 5krpm

UV6: 2.0krpm

DSK: 185°C

UV6: 135°C

Requires:

– HP4=185°C

– HP1=135°C

Plan for ~10-15 min per wafer.

Coat-DSK101[5K]-185C-UV6[2.5K]-135C DSK: 5krpm

UV6: 2.5krpm

same as above same as above
Coat-DSK101[5K]-185C-UV6[3K]-135C DSK: 5krpm

UV6: 3.0krpm

same as above same as above
Coat-DSK101[5K]-185C-UV6[3.5K]-135C DSK: 5krpm

UV6: 3.5krpm

same as above same as above
Coat-DSK101[5K]-185C-UV6[4K]-135C DSK: 5krpm

UV6: 4.0krpm

same as above same as above
Coat-DSK101[5K]-185C-UV6[5K]-135C DSK: 5krpm

UV6: 5.0krpm

same as above same as above
Coat-DSK101[5K]-185C-UV6[6K]-135C DSK: 5krpm

UV6: 6.0krpm

same as above same as above
Hotplate Set Route SET-HP4-220C 220°C Hotplate 4 (top) between 218-222°C when done.
SET-HP4-210C 210°C
SET-HP4-200C 200°C
SET-HP4-185C 185*C

Holography Recipes

The Holography recipes here use the BARC layer XHRiC-11 & the high-res. I-Line photoresist THMR-IP3600HP-D.

Low-K Spin-On Dielectric Recipes

Chemicals Stocked + Datasheets

The following is a list of the lithography chemicals we stock in the lab, with links to the datasheets for each. The datasheets will often have important processing info such as spin-speed vs. thickness curves, typical process parameters, bake temps/times etc.

Positive Photoresists

i-line and broadband

DUV-248nm

Negative Photoresists

i-line and broadband

DUV-248nm

Underlayers
E-beam resists
Nanoimprinting
Contrast Enhancement Materials
Anti-Reflection Coatings
Adhesion Promoters
Spin-On Dielectrics

Low-K Spin-On Dielectrics such as Benzocyclobutane and Spin-on Glass

Developers
Photoresist Removers
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