Difference between revisions of "Lithography Recipes"

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__NOTOC__
==General Information==
 
 
This page contains information and links to recipes/datasheets spin-coated materials used in the facility.
 
 
 
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!Table of Contents
 
!Table of Contents
 
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|'''<u><big>Photolithography Processes</big></u>'''
 
  +
=== '''<big>Photolithography Processes</big>''' ===
*'''UV Optical Lithography'''
 
**[[#Photolithography_Recipes |Photo Lithography Recipe section]]
+
#'''UV Optical Lithography'''
  +
#*[[#PositivePR |'''Stocked Lithography Chemical + Datasheets''']]
***''Has links to starting recipes (spin, bake, exposure, develop etc.) for Contact Aligners, Steppers and Maskless Aligner.''
 
  +
#**''Lists all stocked photolith. chemicals, PRs, strippers, developers, and links to the chemical's application notes/datasheet, which detail the spin curves and nominal processes.''
***''Substrate, surface materials, pattern size can often affect process parameters. Users may need to run Focus/Exposure Arrays/Matrix (FEA's/FEM's) with these processes to achieve high-resolution.''
 
**[[#PositivePR |Stocked Lithography Chemical + Datasheets]]
+
#*[[#Photolithography_Recipes |'''Photo Lithography Recipe section''']]
  +
#**''Starting recipes (spin, bake, exposure, develop etc.) for all photolith. tools.''
***''Lists all stocked photolith. chemicals, PRs, strippers, developers, and links to the chemical's application notes/datasheet, which detail the spin curves and nominal processes.''
 
  +
#**''Substrate/surface materials/pattern size can affect process parameters. Users may need to run Focus/Exposure Arrays/Matrix (FEA's/FEM's) with these processes to achieve high-resolution.''
*'''[[Lithography Recipes#Lift-Off Recipes|Lift-Off Recipes]]'''
 
  +
#**[[Contact Alignment Recipes|<u>Contact Aligner Recipes</u>]]
**''Verified Recipes for lift-off using various photolith. tools''
 
  +
#***[[Contact Alignment Recipes#Suss Aligners .28SUSS MJB-3.29|Suss MJB Aligners]]
**''General educational description of this technique and it's limitations/considerations.''
 
  +
#***[[Contact Alignment Recipes#Contact Aligner .28SUSS MA-6.29|Suss MA6]]
*'''E-beam Lithography'''
 
**[[#E-Beam_Lithography_Recipes |E-Beam Lithography Recipes]]
+
#**[[Stepper Recipes|<u>Stepper Recipes</u>]]
  +
#***[[Stepper Recipes#Stepper 1 .28GCA 6300.29|Stepper #1: GCA 6300]] (I-Line)
***''Has links to starting recipes. Substrates and patterns play a large role in process parameters.''
 
  +
#***[[Stepper Recipes#Stepper 2 .28AutoStep 200.29|Stepper #2: GCA Autostep 200]] (I-Line)
**[[#EBLPR |EBL Photoresist Datasheets]]
 
  +
#***[[Stepper Recipes#Stepper 3 .28ASML DUV.29|Stepper #3: ASML PAS 5500/300]] (DUV)
***''Provided for reference, also showing starting recipes and usage info.''
 
*'''[[Lithography Recipes#Holography Recipes|Holography]]'''
+
#**[[Direct-Write Lithography Recipes|<u>Direct-Write Recipes</u>]]
  +
#***[[Direct-Write Lithography Recipes#Maskless Aligner .28Heidelberg MLA150.29|Heidelberg MLA150]]
**''For 1-D and 2-D gratings with 220nm nominal period, available on substrates up to 1 inch square.''
 
  +
#***[[Lithography Recipes#E-Beam Lithography Recipes|JEOL JBX-6300FS EBL]]
**''Recipes for silicon substrates are provided, and have been translated to other substrates by users.''
 
  +
#***[[Lithography Recipes#FIB Lithography Recipes .28Raith Velion.29|Raith Velion FIB]]
*'''[[#NanoImprinting |Nanoimprinting Resists]]'''
 
  +
#'''[[Lithography Recipes#Lift-Off Recipes|Lift-Off Recipes]]'''
**''Datasheets are provided with starting recipes and usage info.''
 
  +
#*''Verified Recipes for lift-off using various photolith. tools''
**''Recipes provided are for use in the [[Nano-Imprint_(Nanonex_NX2000) |Nano-Imprint (Nanonex NX2000)]] system only.''
 
  +
#*''General educational description of this technique and it's limitations/considerations.''
 
  +
#'''E-beam Lithography'''
<u>'''<big>Photolithography Chemicals/Materials</big>'''</u>
 
  +
#*[[#E-Beam_Lithography_Recipes |E-Beam Lithography Recipes]]
*'''[[#Underlayers |Underlayers]]'''
 
  +
#**''Has links to starting recipes. Substrates and patterns play a large role in process parameters.''
**''These are used beneath resists for both adhesive purposes and to enable bi-layer lift-off profiles for use with photoresist.''
 
  +
#*[[#EBLPR |EBL Photoresist Datasheets]]
**''Datasheets are provided.''
 
  +
#**''Provided for reference, also showing starting recipes and usage info.''
*'''[[#AntiReflectionCoatings |Anti-Reflection Coatings]]''':
 
  +
#'''[[Lithography Recipes#Holography Recipes|Holography]]'''
**[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.
 
  +
#*''For 1-D and 2-D gratings with 220nm nominal period, available on substrates up to 1 inch square.''
**''Bottom Anti-Reflection Coatings (BARC) are used in the stepper systems, underneath the resists to eliminate substrate reflections that can affect resolution and repeatability for small, near resolution limited, feature sizes.''
 
**''Datasheets are provided for reference on use of the materials.''
+
#*''Recipes for silicon substrates are provided, and have been translated to other substrates by users.''
  +
#'''[[#NanoImprinting |Nanoimprinting Resists]]'''
*'''[[#ContrastEnhancement |Contrast Enhancement Materials (CEM)]]'''
 
  +
#*''Datasheets are provided with starting recipes and usage info.''
**[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.
 
  +
#*''Recipes provided are for use in the [[Nano-Imprint_(Nanonex_NX2000) |Nano-Imprint (Nanonex NX2000)]] system only.''
**''Used for resolution enhancement. Not for use in contact aligners, typically used on I-Line Steppers.''
 
  +
|-
**''Datasheets provided with usage info.''
 
  +
|
*'''[[#AdhesionPromoters |Adhesion Promoters]]'''
 
  +
=== '''<big>Photolithography Chemicals/Materials</big>''' ===
**''These are used to improve wetting of photoresists to your substrate.''
 
  +
#'''[[#Underlayers |Underlayers]]'''
**''Datasheets are provided on use of these materials.''
 
  +
#*''These are used beneath resists for both adhesive purposes and to enable bi-layer lift-off profiles for use with photoresist.''
 
  +
#*''Datasheets are provided.''
*'''[[#SpinOnDielectrics |Low-K Spin-on Dielectrics]]'''
 
  +
#'''[[#AntiReflectionCoatings |Anti-Reflection Coatings]]''':
**[[Lithography Recipes#SpinOnDielectrics|Spin-On Dielectrics]]
 
  +
#*[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.
***''Datasheets for BCB, Photo-BCB, and SOG (spin-on-glass) for reference on use.''
 
  +
#*''Bottom Anti-Reflection Coatings (BARC) are used in the stepper systems, underneath the resists to eliminate substrate reflections that can affect resolution and repeatability for small, near resolution limited, feature sizes.''
**[[#Low-K_Spin-On_Dielectric_Recipes |Low-K Spin-On Dielectric Recipes]]
 
  +
#*''Datasheets are provided for reference on use of the materials.''
***''Recipes for usage of some spin-on dielectrics.''
 
*'''[[#Developers |Developers and Removers]]'''
+
#'''[[#ContrastEnhancement |Contrast Enhancement Materials (CEM)]]'''
  +
#*[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.
**''Datasheets provided for reference.''
 
  +
#*''Used for resolution enhancement. Not for use in contact aligners, typically used on I-Line Steppers.''
**''Remover and Photoresist Strippers are used to dissolve PR during lift-off or after etching.''
 
  +
#*''Datasheets provided with usage info.''
  +
#'''[[#AdhesionPromoters |Adhesion Promoters]]'''
  +
#*''These are used to improve wetting of photoresists to your substrate.''
  +
#*''Datasheets are provided on use of these materials.''
  +
#'''[[#SpinOnDielectrics |Low-K Spin-on Dielectrics]]'''
  +
#*[[Lithography Recipes#SpinOnDielectrics|Spin-On Dielectrics]]
  +
#**''Datasheets for BCB, Photo-BCB, and SOG (spin-on-glass) for reference on use.''
  +
#*[[#Low-K_Spin-On_Dielectric_Recipes |Low-K Spin-On Dielectric Recipes]]
  +
#**''Recipes for usage of some spin-on dielectrics.''
  +
#'''[[#Developers |Developers and Removers]]'''
  +
#*''Datasheets provided for reference.''
  +
#*''Remover and Photoresist Strippers are used to dissolve PR during lift-off or after etching.''
 
|}
 
|}
   
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{{Recipe Table Explanation}}
 
{{Recipe Table Explanation}}
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''Click the tool title to go to recipes for that tool.''
   
  +
''Click the photoresist title to get the datasheet, also found in [[Lithography Recipes#Chemicals Stocked .2B Datasheets|Stocked Chemicals + Datasheets]].''
 
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
 
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! colspan="2" align="center" |'''[[Contact Alignment Recipes|<big>Contact Aligner Recipes</big>]]'''
 
! colspan="2" align="center" |'''[[Contact Alignment Recipes|<big>Contact Aligner Recipes</big>]]'''
 
! colspan="3" align="center" |'''[[Stepper Recipes|<big>Stepper Recipes</big>]]'''
 
! colspan="3" align="center" |'''[[Stepper Recipes|<big>Stepper Recipes</big>]]'''
! align="center" |Other
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! align="center" |[[Direct-Write Lithography Recipes|Direct-Write Litho. Recipes]]
 
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|-
 
! width="150" bgcolor="#D0E7FF" align="center" |'''Positive Resists'''
 
! width="150" bgcolor="#D0E7FF" align="center" |'''Positive Resists'''
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| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/29/SPR955-Positive-Resist-Datasheet.pdf SPR 955 CM-1.8]
 
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/29/SPR955-Positive-Resist-Datasheet.pdf SPR 955 CM-1.8]
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| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/3f/SPR220-Positive-Resist-Datasheet.pdf SPR 220-3.0]
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| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/3f/SPR220-Positive-Resist-Datasheet.pdf SPR 220-7.0]
 
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/3f/SPR220-Positive-Resist-Datasheet.pdf SPR 220-7.0]
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| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/b/be/3600_D%2C_D2v_Spin_Speed_Curve.pdf THMR-IP3600 HP D]
 
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/b/be/3600_D%2C_D2v_Spin_Speed_Curve.pdf THMR-IP3600 HP D]
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! bgcolor="#D0E7FF" align="center" | '''Anti-Reflection Coatings'''
 
! bgcolor="#D0E7FF" align="center" | '''Anti-Reflection Coatings'''
 
{{LithRecipe Table}}
 
{{LithRecipe Table}}
 
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==[[Holographic Lith/PL Setup (Custom)|Holography Recipes]]==
 
==[[Holographic Lith/PL Setup (Custom)|Holography Recipes]]==
  +
''The Holography recipes here use the BARC layer XHRiC-11 & the high-res. I-Line photoresist THMR-IP3600HP-D.''
 
*{{fl|Holography_Process_for_1D-lines_and_2D-dots_(ARC-11_%26_THMR-IP3600HP-D)-updated-8-13-2018-A.pdf|Standard Holography Process - on SiO2 on Si}}
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*{{fl|Holography_Process_for_1D-lines_and_2D-dots_%28ARC-11_%26_THMR-IP3600HP-D%29-updated-4-8-2021.pdf|Standard Holography Process - on SiO2 on Si}}
 
*{{fl|Holography-Process-Variation-revA.pdf|Holography Process Variations - Set-up Angle - Etching into SiO2 and Si}}
 
*{{fl|Holography-Process-Variation-revA.pdf|Holography Process Variations - Set-up Angle - Etching into SiO2 and Si}}
 
*{{fl|05-SiO2_Nano-structure_Etch.pdf|Etch SiO2 Nano-structure - Changing Side-wall Angle - Etching into Si with a different line-width}}
 
*{{fl|05-SiO2_Nano-structure_Etch.pdf|Etch SiO2 Nano-structure - Changing Side-wall Angle - Etching into Si with a different line-width}}

Revision as of 18:00, 8 April 2021

Table of Contents

Photolithography Processes

  1. UV Optical Lithography
  2. Lift-Off Recipes
    • Verified Recipes for lift-off using various photolith. tools
    • General educational description of this technique and it's limitations/considerations.
  3. E-beam Lithography
  4. Holography
    • For 1-D and 2-D gratings with 220nm nominal period, available on substrates up to 1 inch square.
    • Recipes for silicon substrates are provided, and have been translated to other substrates by users.
  5. Nanoimprinting Resists

Photolithography Chemicals/Materials

  1. Underlayers
    • These are used beneath resists for both adhesive purposes and to enable bi-layer lift-off profiles for use with photoresist.
    • Datasheets are provided.
  2. Anti-Reflection Coatings:
    • The Photoresist Recipes section contains recipes using these materials.
    • Bottom Anti-Reflection Coatings (BARC) are used in the stepper systems, underneath the resists to eliminate substrate reflections that can affect resolution and repeatability for small, near resolution limited, feature sizes.
    • Datasheets are provided for reference on use of the materials.
  3. Contrast Enhancement Materials (CEM)
    • The Photoresist Recipes section contains recipes using these materials.
    • Used for resolution enhancement. Not for use in contact aligners, typically used on I-Line Steppers.
    • Datasheets provided with usage info.
  4. Adhesion Promoters
    • These are used to improve wetting of photoresists to your substrate.
    • Datasheets are provided on use of these materials.
  5. Low-K Spin-on Dielectrics
  6. Developers and Removers
    • Datasheets provided for reference.
    • Remover and Photoresist Strippers are used to dissolve PR during lift-off or after etching.

Photolithography Recipes

  • R = Recipe is available. Clicking this link will take you to the recipe.
  • A = Material is available for use, but no recipes are provided.

Click the tool title to go to recipes for that tool.

Click the photoresist title to get the datasheet, also found in Stocked Chemicals + Datasheets.

Photolithography Recipes
Contact Aligner Recipes Stepper Recipes Direct-Write Litho. Recipes
Positive Resists SUSS MJB-3 SUSS MA-6 Stepper 1
(GCA 6300)
Stepper 2
(AutoStep 200)
Stepper 3
(ASML DUV)
MLA150
(Heidelberg)
AZ4110 R R A A R
AZ4210 R R A A A
AZ4330RS R R A A R
AZ4620 A A A A A
OCG 825-35CS A A A A A
SPR 955 CM-0.9 A R R R R
SPR 955 CM-1.8 A A R R A
SPR 220-3.0 R R R R R
SPR 220-7.0 R R R R A
THMR-IP3600 HP D A A R
UV6-0.8 R
UV210-0.3 R
UV26-2.5 A
Negative Resists SUSS MJB-3 SUSS MA-6 Stepper 1
(GCA 6300)
Stepper 2
(AutoStep 200)
Stepper 3
(ASML DUV)
MLA150
(Heidelberg)
AZ5214-EIR R R R R R
AZnLOF 2020 R R R R R
AZnLOF 2035 A A A A A
AZnLOF 2070 A A A A A
AZnLOF 5510 A A R R A
UVN30-0.8 R
SU-8 2005,2010,2015 A R A A A
SU-8 2075 A A A A R
NR9-1000,3000,6000PY R R A R A
Anti-Reflection Coatings SUSS MJB-3 SUSS MA-6 Stepper 1
(GCA 6300)
Stepper 2
(AutoStep 200)
Stepper 3
(ASML DUV)
MLA150
(Heidelberg)
XHRiC-11 A A A
DUV42-P R
DS-K101-304 R
SUSS MJB-3 SUSS MA-6 Stepper 1
(GCA 6300)
Stepper 2
(AutoStep 200)
Stepper 3
(ASML DUV)
MLA150
(Heidelberg)

Lift-Off Recipes

E-Beam Lithography Recipes (JEOL JBX-6300FS)

  • Under Development.

FIB Lithography Recipes (Raith Velion)

To Be Added

Automated Coat/Develop System Recipes (S-Cubed Flexi)

Recipes pre-loaded on the S-Cubed Flexi automated coat/bake/develop system. Only staff may write new recipes, contact the tool supervisor for more info.

To Be Added

Nanoimprinting Recipes

Holography Recipes

The Holography recipes here use the BARC layer XHRiC-11 & the high-res. I-Line photoresist THMR-IP3600HP-D.

Low-K Spin-On Dielectric Recipes

Chemicals Stocked + Datasheets

The following is a list of the lithography chemicals we stock in the lab, with links to the datasheets for each. The datasheets will often have important processing info such as spin-speed vs. thickness curves, typical process parameters, bake temps/times etc.

Positive Photoresists

i-line and broadband

DUV-248nm

Negative Photoresists

i-line and broadband

DUV-248nm

Underlayers
E-beam resists
Nanoimprinting
Contrast Enhancement Materials
Anti-Reflection Coatings
Adhesion Promoters
Spin-On Dielectrics

Low-K Spin-On Dielectrics such as Benzocyclobutane and Spin-on Glass

Developers
Photoresist Removers