Difference between revisions of "Lithography Recipes"

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__NOTOC__
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==General Information==
  
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This page contains information and links to recipes/datasheets spin-coated materials used in the facility.
 
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=== '''<big>Photolithography Processes</big>''' ===
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*'''[[#PositivePR |Photoresists]]'''
 
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**[[#Photolithography_Recipes |Photo Lithography Recipe section]]
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#'''UV Optical Lithography'''
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#*[[#PositivePR |'''Stocked Lithography Chemical + Datasheets''']]
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***''Has links to starting recipes (spin, bake, exposure, develop etc.).''
 
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#**''Lists all stocked photolith. chemicals, PRs, strippers, developers, and links to the chemical's application notes/datasheet, which detail the spin curves and nominal processes.''
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***''Substrate, surface materials, pattern size can often affect process parameters. Users may need to run Focus/Exposure Arrays/Matrix (FEA's/FEM's) with these processes to achieve high-resolution.''
  
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**[[#PositivePR |Stocked Lithography Chemical + Datasheets]]
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#*[[#Photolithography_Recipes |'''Photo Lithography Recipe section''']]
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#**''Starting recipes (spin, bake, exposure, develop etc.) for all photolith. tools.''
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***''Lists all stocked photolith. chemicals, PRs, strippers, developers, and links to the chemical's application notes/datasheet, which detail the spin curves and nominal processes.''
  
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#**''Substrate/surface materials/pattern size can affect process parameters. Users may need to run Focus/Exposure Arrays/Matrix (FEA's/FEM's) with these processes to achieve high-resolution.''
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*'''[[#EBLPR |E-beam Lithography Resists]]'''
  
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#**[[Contact Alignment Recipes|<u>Contact Aligner Recipes</u>]]
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**[[#E-Beam_Lithography_Recipes |E-Beam Lithography Recipes]]
  
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#***[[Contact Alignment Recipes#Suss Aligners .28SUSS MJB-3.29|Suss MJB Aligners]]
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***''Has links to starting recipes. Substrates and patterns play a large role in process parameters.''
  
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#***[[Contact Alignment Recipes#Contact Aligner .28SUSS MA-6.29|Suss MA6]]
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**[[#EBLPR |EBL Photoresist Datasheets]]
  
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#**[[Stepper Recipes|<u>Stepper Recipes</u>]]
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***''Provided for reference, also showing starting recipes and usage info.''
  
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#***[[Stepper Recipes#Stepper 1 .28GCA 6300.29|Stepper #1: GCA 6300]] (I-Line)
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*'''[[#NanoImprinting |Nanoimprinting Resists]]'''
  
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#***[[Stepper Recipes#Stepper 2 .28AutoStep 200.29|Stepper #2: GCA Autostep 200]] (I-Line)
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**''Datasheets are provided with starting recipes and usage info.''
 
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#***[[Stepper Recipes#Stepper 3 .28ASML DUV.29|Stepper #3: ASML PAS 5500/300]] (DUV)
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**''Recipes provided are for use in the [[Nano-Imprint_(Nanonex_NX2000) |Nano-Imprint (Nanonex NX2000)]] system only.''
  
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#**[[Direct-Write Lithography Recipes|<u>Direct-Write Recipes</u>]]
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#***[[Direct-Write Lithography Recipes#Maskless Aligner .28Heidelberg MLA150.29|Heidelberg MLA150]]
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*'''[[#Underlayers |Underlayers]]'''
  
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#***[[Lithography Recipes#E-Beam Lithography Recipes|JEOL JBX-6300FS EBL]]
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**''These are used beneath resists for both adhesive purposes and to enable bi-layer lift-off profiles for use with photoresist.''
 
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#***[[Lithography Recipes#FIB Lithography Recipes .28Raith Velion.29|Raith Velion FIB]]
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**''Datasheets are provided.''
  
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*[[#Lift-Off_Techniques |'''Lift-Off Techniques''']]
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#'''[[Lithography Recipes#Lift-Off Recipes|Lift-Off Recipes]]'''
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**''Verified Recipes for lift-off using various photolith. tools''
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#*''Verified Recipes for lift-off using various photolith. tools''
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**''General educational description of this technique and it's limitations/considerations.''
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#*''General educational description of this technique and it's limitations/considerations.''
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*'''[[Lithography Recipes#Holography Recipes|Holography]]'''
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#'''E-beam Lithography'''
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#*[[#E-Beam_Lithography_Recipes |E-Beam Lithography Recipes]]
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**''For 1-D and 2-D gratings with 220nm nominal period, available on substrates up to 1 inch square.''
 
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#**''Has links to starting recipes. Substrates and patterns play a large role in process parameters.''
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**''Recipes for silicon substrates are provided, and have been translated to other substrates by users.''
  
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#*[[#EBLPR |EBL Photoresist Datasheets]]
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*'''[[#AntiReflectionCoatings |Anti-Reflection Coatings]]''':
 
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#**''Provided for reference, also showing starting recipes and usage info.''
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**[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.
  
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#'''[[Lithography Recipes#Holography Recipes|Holography]]'''
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**''Bottom Anti-Reflection Coatings (BARC) are used in the stepper systems, underneath the resists to eliminate substrate reflections that can affect resolution and repeatability for small, near resolution limited, feature sizes.''
 
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#*''For 1-D and 2-D gratings with 220nm nominal period, available on substrates up to 1 inch square.''
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**''Datasheets are provided for reference on use of the materials.''
  
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#*''Recipes for silicon substrates are provided, and have been translated to other substrates by users.''
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*'''[[#ContrastEnhancement |Contrast Enhancement Materials (CEM)]]'''
  
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#'''[[#NanoImprinting |Nanoimprinting Resists]]'''
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**[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.
  
  +
#*''Datasheets are provided with starting recipes and usage info.''
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**''Used for resolution enhancement. Not for use in contact aligners, typically used on I-Line Steppers.''
  
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#*''Recipes provided are for use in the [[Nano-Imprint_(Nanonex_NX2000) |Nano-Imprint (Nanonex NX2000)]] system only.''
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**''Datasheets provided with usage info.''
  
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|-
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*'''[[#AdhesionPromoters |Adhesion Promoters]]'''
  
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|
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**''These are used to improve wetting of photoresists to your substrate.''
 
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=== '''<big>Photolithography Chemicals/Materials</big>''' ===
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**''Datasheets are provided on use of these materials.''
  
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#'''[[#Underlayers |Underlayers]]'''
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#*''These are used beneath resists for both adhesive purposes and to enable bi-layer lift-off profiles for use with photoresist.''
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*'''[[#SpinOnDielectrics |Low-K Spin-on Dielectrics]]'''
 
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#*''Datasheets are provided.''
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**[[Lithography Recipes#SpinOnDielectrics|Spin-On Dielectrics]]
 
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#'''[[#AntiReflectionCoatings |Anti-Reflection Coatings]]''':
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***''Datasheets for BCB, Photo-BCB, and SOG (spin-on-glass) for reference on use.''
  
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#*[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.
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**[[#Low-K_Spin-On_Dielectric_Recipes |Low-K Spin-On Dielectric Recipes]]
  
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#*''Bottom Anti-Reflection Coatings (BARC) are used in the stepper systems, underneath the resists to eliminate substrate reflections that can affect resolution and repeatability for small, near resolution limited, feature sizes.''
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***''Recipes for usage of some spin-on dielectrics.''
  
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#*''Datasheets are provided for reference on use of the materials.''
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*'''[[#Developers |Developers and Removers]]'''
  
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#'''[[#ContrastEnhancement |Contrast Enhancement Materials (CEM)]]'''
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**''Datasheets provided for reference.''
  
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#*[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.
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**''Remover and Photoresist Strippers are used to dissolve PR during lift-off or after etching.''
  
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#*''Used for resolution enhancement. Not for use in contact aligners, typically used on I-Line Steppers.''
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#*''Datasheets provided with usage info.''
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#'''[[#AdhesionPromoters |Adhesion Promoters]]'''
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#*''These are used to improve wetting of photoresists to your substrate.''
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#*''Datasheets are provided on use of these materials.''
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#'''[[#SpinOnDielectrics |Low-K Spin-on Dielectrics]]'''
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#*[[Lithography Recipes#SpinOnDielectrics|Spin-On Dielectrics]]
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#**''Datasheets for BCB, Photo-BCB, and SOG (spin-on-glass) for reference on use.''
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#*[[#Low-K_Spin-On_Dielectric_Recipes |Low-K Spin-On Dielectric Recipes]]
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#**''Recipes for usage of some spin-on dielectrics.''
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#'''[[#Developers |Developers and Removers]]'''
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#*''Datasheets provided for reference.''
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#*''Remover and Photoresist Strippers are used to dissolve PR during lift-off or after etching.''
 
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{{Recipe Table Explanation}}
 
{{Recipe Table Explanation}}
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''Click the tool title to go to recipes for that tool.''
   
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''Click the photoresist title to get the datasheet, also found in [[Lithography Recipes#Chemicals Stocked .2B Datasheets|Stocked Chemicals + Datasheets]].''
 
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
  
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
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|-
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|- bgcolor="#D0E7FF"
  
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! colspan="9" height="45" |<div style="font-size: 150%;">Photolithography Recipes</div>
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! colspan="7" height="45" |<div style="font-size: 150%;">Photolithography Recipes</div>
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|- bgcolor="#D0E7FF"
  
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|<!-- INTENTIONALLY LEFT BLANK --><br>
  
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! colspan="2" bgcolor="#D0E7FF" align="center" |'''[[Contact Alignment Recipes|<big>Contact Aligner Recipes</big>]]'''
  
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! colspan="3" bgcolor="#D0E7FF" align="center" |'''[[Stepper Recipes|<big>Steppers Recipes</big>]]'''
  
   
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|-
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| bgcolor="#EAECF0" | <!-- INTENTIONALLY BLANK -->
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! colspan="2" align="center" |'''[[Contact Alignment Recipes|<big>Contact Aligner Recipes</big>]]'''
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! colspan="3" align="center" |'''[[Stepper Recipes|<big>Stepper Recipes</big>]]'''
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! align="center" |[[Direct-Write Lithography Recipes|Direct-Write Litho. Recipes]]
 
|-
  
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! width="150" bgcolor="#D0E7FF" align="center" |'''Positive Resists'''
 
! width="150" bgcolor="#D0E7FF" align="center" |'''Positive Resists'''
 
{{LithRecipe Table}}
  
{{LithRecipe Table}}
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| bgcolor="#D0E7FF" align="center" |AZ4110
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| bgcolor="#D0E7FF" align="center" |[[:File:AXP4000pb-Datasheet.pdf|AZ4110]]
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| bgcolor="EEFFFF" |{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}
  
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| bgcolor="EEFFFF" |{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
  
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| bgcolor="#D0E7FF" align="center" |AZ4210
  
 
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}
  
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}
 
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
  
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| bgcolor="#D0E7FF" align="center" |AZ4330RS
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| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/fc/AXP4000pb-Datasheet.pdf AZ4210]
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| bgcolor="EEFFFF" |{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}
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|{{rl|MLA_Recipes|Positive Resist (MLA 150)}}
 
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| bgcolor="#D0E7FF" align="center" |OCG 825-35CS
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| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/a/a2/Az_p4620_photoresist_data_package.pdf AZ4620]
 
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| bgcolor="#D0E7FF" align="center" |SPR 950-0.8
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| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/8/8b/OCG825-Positive-Resist-Datasheet.pdf OCG 825-35CS]
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| bgcolor="#D0E7FF" align="center" |SPR 955 CM-0.9
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|{{rl|Stepper Recipes|Positive Resist (GCA 6300)}}
  
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)}}
 
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)}}
  
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| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/29/SPR955-Positive-Resist-Datasheet.pdf SPR 955 CM-1.8]
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| bgcolor="EEFFFF" |{{rl|Stepper Recipes|Positive Resist (GCA 6300)}}
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| bgcolor="EEFFFF" |{{rl|Stepper Recipes|Positive Resist (AutoStep 200)}}
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| bgcolor="#D0E7FF" align="center" |SPR 220-3.0
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| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/3f/SPR220-Positive-Resist-Datasheet.pdf SPR 220-3.0]
 
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}
  
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|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
 
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)}}
  
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)}}
 
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| bgcolor="#D0E7FF" align="center" |SPR 220-7.0
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|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}
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|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
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|{{rl|Stepper Recipes|Positive Resist (GCA 6300)}}
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| bgcolor="#D0E7FF" align="center" |THMR-IP3600 HP D
  
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| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/b/be/3600_D%2C_D2v_Spin_Speed_Curve.pdf THMR-IP3600 HP D]
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|{{rl|Stepper Recipes|Positive Resist (ASML DUV)}}
  
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| bgcolor="#D0E7FF" align="center" |UV26-2.5
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! bgcolor="#D0E7FF" align="center" |'''Negative Resists'''
 
! bgcolor="#D0E7FF" align="center" |'''Negative Resists'''
 
{{LithRecipe Table}}
  
{{LithRecipe Table}}
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|{{rl|Contact_Alignment_Recipes|Negative Resist (MJB-3)}}
  
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| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2020]
 
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}
  
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|{{rl|Stepper Recipes|Negative Resist (ASML DUV)}}
  
|{{rl|Stepper Recipes|Negative Resist (ASML DUV)}}
  +
|
−  
  +
|-
  +
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/7/78/SU-8-2015-revA.pdf SU-8 2005,2010,2015]
  +
| A
  +
| {{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}
  +
| A
  +
| A
  +
|
  +
|A
 
|- bgcolor="EEFFFF"
  
|- bgcolor="EEFFFF"
−
| bgcolor="#D0E7FF" align="center" |SU-8 2005,2010, 2015
 +
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/2c/SU-8-2075-revA.pdf SU-8 2075]
  +
|A
 
|A
  
|A
−
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}
  
 
|A
  
|A
 
|A
  
|A
 
|
  
|
  +
|{{rl|MLA Recipes|Negative Resist (MLA 150)}}
−  
 
|-
 
|-
  +
| bgcolor="#D0E7FF" align="center" |NR9-[//wiki.nanotech.ucsb.edu/w/images/8/8f/NR9-1000PY-revA.pdf 1000],[//wiki.nanotech.ucsb.edu/w/images/7/71/NR9-3000PY-revA.pdf 3000],[//wiki.nanotech.ucsb.edu/w/images/f/f9/NR9-6000PY-revA.pdf 6000]PY
−
| bgcolor="#D0E7FF" align="center" |SU-8 2075
  
−
|A
  
−
|A
  
−
|A
  
−
|A
  
−
|
  
−  
−
|- bgcolor="EEFFFF"
  
−
| bgcolor="#D0E7FF" align="center" |NR9-1000,3000,6000PY
  
 
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}
  
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}
 
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
  
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
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|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}
  
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}
 
|
  
|
  +
|A
−  
  +
|- bgcolor="EEFFFF"
−
|-
 
 
! bgcolor="#D0E7FF" align="center" | '''Anti-Reflection Coatings'''
  
! bgcolor="#D0E7FF" align="center" | '''Anti-Reflection Coatings'''
 
{{LithRecipe Table}}
 
{{LithRecipe Table}}
  +
|-
  +
|bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/33/XHRiC-Anti-Reflective-Coating.pdf XHRiC-11]
  +
|
  +
|
  +
|A
  +
|A
  +
|
  +
|A
 
|- bgcolor="EEFFFF"
  
|- bgcolor="EEFFFF"
−
| bgcolor="#D0E7FF" align="center" |DUV42-P
 +
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/0/07/DUV42P-Anti-Reflective-Coating.pdf DUV42-P]
 
|
  
|
 
|
  
|
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|
  
|
 
|{{rl|Stepper Recipes|DUV-42P}}
  
|{{rl|Stepper Recipes|DUV-42P}}
  +
|
−  
 
|-
  
|-
−
| bgcolor="#D0E7FF" align="center" |DS-K101-304
 +
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/a/af/DS-K101-304-Anti-Reflective-Coating.pdf DS-K101-304]
 
|
  
|
 
|
  
|
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|
  
|
 
|{{rl|Stepper Recipes|DS-K101-304}}
  
|{{rl|Stepper Recipes|DS-K101-304}}
  +
|
−  
 
|-
  
|-
 
! bgcolor="#D0E7FF" align="center" |
 
! bgcolor="#D0E7FF" align="center" |
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<!-- end Litho Recipes table -->
  
<!-- end Litho Recipes table -->
   
−
==E-Beam Lithography Recipes==
 +
==Lift-Off Recipes==
  +
  +
*{{fl|Liftoff-Techniques.pdf|Lift-Off Description/Tutorial}}
  +
**How it works, process limits and considerations for designing your process
  +
*{{fl|Bi-LayerContactprocesswithPMGI.pdf|I-Line Lift-Off: Bi-Layer Process with PMGI Underlayer and Contact Aligner}}
  +
*[[Lift-Off with DUV Imaging + PMGI Underlayer|DUV Lift-Off: UV6 Imaging Resist + PMGI Underlayer]]
  +
  +
==[[E-Beam Lithography System (JEOL JBX-6300FS)|E-Beam Lithography Recipes (JEOL JBX-6300FS)]]==
   
 
*Under Development.
  
*Under Development.
  +
  +
== [[Focused Ion-Beam Lithography (Raith Velion)|FIB Lithography Recipes (Raith Velion)]] ==
  +
''To Be Added''
   
 
==[[Automated Coat/Develop System (S-Cubed Flexi)|Automated Coat/Develop System Recipes (S-Cubed Flexi)]]==
  
==[[Automated Coat/Develop System (S-Cubed Flexi)|Automated Coat/Develop System Recipes (S-Cubed Flexi)]]==
Line 283: Line 313:
 
''To Be Added''
  
''To Be Added''
   
−
==Nanoimprinting Recipes==
 +
==[[Nano-Imprint (Nanonex NX2000)|Nanoimprinting Recipes]]==
   
 
*{{fl|Thermal-Nanoimprint-Process-Tutorial-revA.pdf|Thermal Nanoimprint Process and Tutorial}}
  
*{{fl|Thermal-Nanoimprint-Process-Tutorial-revA.pdf|Thermal Nanoimprint Process and Tutorial}}
 
*{{fl|Nanoinprint-Lithopgraphy-UV-Low-Pressure-Temperature-Ormostamp-PDMS-RevA.docx|UV-Cure Low Temp, Low Pressure, Soft-Stamp Nanoimprint Process}}
  
*{{fl|Nanoinprint-Lithopgraphy-UV-Low-Pressure-Temperature-Ormostamp-PDMS-RevA.docx|UV-Cure Low Temp, Low Pressure, Soft-Stamp Nanoimprint Process}}
   
−
==Holography Recipes==
 +
==[[Holographic Lith/PL Setup (Custom)|Holography Recipes]]==
  +
''The Holography recipes here use the BARC layer XHRiC-11 & the high-res. I-Line photoresist THMR-IP3600HP-D.''
−  
−
*{{fl|Holography_Process_for_1D-lines_and_2D-dots_(ARC-11_%26_THMR-IP3600HP-D)-updated-8-13-2018-A.pdf|Standard Holography Process - on SiO2 on Si}}
 +
*{{fl|Holography_Process_for_1D-lines_and_2D-dots_%28ARC-11_%26_THMR-IP3600HP-D%29-updated-4-8-2021.pdf|Standard Holography Process - on SiO2 on Si}}
 
*{{fl|Holography-Process-Variation-revA.pdf|Holography Process Variations - Set-up Angle - Etching into SiO2 and Si}}
  
*{{fl|Holography-Process-Variation-revA.pdf|Holography Process Variations - Set-up Angle - Etching into SiO2 and Si}}
 
*{{fl|05-SiO2_Nano-structure_Etch.pdf|Etch SiO2 Nano-structure - Changing Side-wall Angle - Etching into Si with a different line-width}}
  
*{{fl|05-SiO2_Nano-structure_Etch.pdf|Etch SiO2 Nano-structure - Changing Side-wall Angle - Etching into Si with a different line-width}}
Line 300: Line 330:
 
*{{fl|BCB-cyclotene-3000-revA.pdf|Standard BCB (3022-46)}}
  
*{{fl|BCB-cyclotene-3000-revA.pdf|Standard BCB (3022-46)}}
 
*{{fl|512B-Application-Data-Bake-revA.pdf|SOG (T512B)}}
  
*{{fl|512B-Application-Data-Bake-revA.pdf|SOG (T512B)}}
−  
−
==Lift-Off Techniques==
  
−  
−
*{{fl|Liftoff-Techniques.pdf|Lift-Off Description/Tutorial}}
  
−
**How it works, process limits and considerations for designing your process
  
−
*{{fl|Bi-LayerContactprocesswithPMGI.pdf|I-Line Lift-Off: Bi-Layer Process with PMGI Underlayer and Contact Aligner}}
  
−
*[[Lift-Off with DUV Imaging + PMGI Underlayer|DUV Lift-Off: UV6 Imaging Resist + PMGI Underlayer]]
  
   
 
==Chemicals Stocked + Datasheets==
  
==Chemicals Stocked + Datasheets==
Line 321: Line 344:
 
*{{fl|SPR220-Positive-Resist-Datasheet.pdf|SPR220 (SPR220-3, SPR220-7)}}
  
*{{fl|SPR220-Positive-Resist-Datasheet.pdf|SPR220 (SPR220-3, SPR220-7)}}
 
*{{fl|SPR955-Positive-Resist-Datasheet.pdf|SPR955CM (SPR955CM-0.9, SPR955CM-1.8)}}
  
*{{fl|SPR955-Positive-Resist-Datasheet.pdf|SPR955CM (SPR955CM-0.9, SPR955CM-1.8)}}
−
*{{fl|THMR_iP_3500_iP3600.pdf|THMR-3600HP-1 (thin i-line and Holography)}}
 +
*THMR-3600HP (Thin I-Line & Holography)
−
*{{fl|3600_D,_D2v_Spin_Speed_Curve.pdf|THMR-3600HP-2 (thin i-line and Holography)}}
 +
**{{fl|THMR_iP_3500_iP3600.pdf|Evaluation Results: THMR-3600HP}}
−
*{{fl|THMR-iP3600_HP_D_20140801_(B)_GHS_US.pdf|THMR-3600HP-3 (thin i-line and Holography)}}
 +
**{{fl|3600_D,_D2v_Spin_Speed_Curve.pdf|Spin Curves for THMR-3600HP}}
  +
**{{fl|THMR-iP3600_HP_D_20140801_(B)_GHS_US.pdf|Safety Datasheet for THMR-3600HP}}
   
 
'''''DUV-248nm'''''
  
'''''DUV-248nm'''''
Line 330: Line 354:
 
*{{fl|UV6-Positive-Resist-Datasheet.pdf|UV6-0.8}}
  
*{{fl|UV6-Positive-Resist-Datasheet.pdf|UV6-0.8}}
 
*{{fl|UV26-Positive-Resist-Datasheet.pdf|UV26-2.5}}
  
*{{fl|UV26-Positive-Resist-Datasheet.pdf|UV26-2.5}}
−  
   
 
;<div id="NegativePR"><big>Negative Photoresists</big></div>
  
;<div id="NegativePR"><big>Negative Photoresists</big></div>
Line 348: Line 371:
   
 
*{{fl|UVN-30_-_Negative-Resist-Datasheet_-_Apr_2004.pdf|UVN-30-0.8}}
  
*{{fl|UVN-30_-_Negative-Resist-Datasheet_-_Apr_2004.pdf|UVN-30-0.8}}
−  
   
 
;<div id="Underlayers"><big>Underlayers</big></div>
  
;<div id="Underlayers"><big>Underlayers</big></div>
Line 354: Line 376:
 
*{{fl|PMGI-Underlayer-Datasheet.pdf|PMGI (PMGI SF3,5,8,11,15)}}
  
*{{fl|PMGI-Underlayer-Datasheet.pdf|PMGI (PMGI SF3,5,8,11,15)}}
 
*{{fl|LOL2000-Underlayer-Datasheet.pdf|Shipley LOL2000}}
  
*{{fl|LOL2000-Underlayer-Datasheet.pdf|Shipley LOL2000}}
−  
   
 
;<div id="EBLPR"><big>E-beam resists</big></div>
  
;<div id="EBLPR"><big>E-beam resists</big></div>
Line 360: Line 381:
 
*{{fl|PMMA-E-Beam-Resist-Datasheet.pdf|PMMA (PMMA, P(MMA-MAA) copolymer)}}
  
*{{fl|PMMA-E-Beam-Resist-Datasheet.pdf|PMMA (PMMA, P(MMA-MAA) copolymer)}}
 
*{{fl|maN2403-E-Beam-Resist-Datasheet.pdf|maN 2403}}
  
*{{fl|maN2403-E-Beam-Resist-Datasheet.pdf|maN 2403}}
−  
   
 
;<div id="NanoImprinting"><big>Nanoimprinting</big></div>
  
;<div id="NanoImprinting"><big>Nanoimprinting</big></div>
Line 373: Line 393:
   
 
*{{fl|CEM365iS-Contrast-Enhancement-Datasheet.pdf|CEM365iS}}
  
*{{fl|CEM365iS-Contrast-Enhancement-Datasheet.pdf|CEM365iS}}
−  
   
 
;<div id="AntiReflectionCoatings"><big>Anti-Reflection Coatings</big></div>
  
;<div id="AntiReflectionCoatings"><big>Anti-Reflection Coatings</big></div>
   
−
*{{fl|XHRiC-Anti-Reflective-Coating.pdf|XHRiC (i-line)}}
 +
*{{fl|XHRiC-Anti-Reflective-Coating.pdf|XHRiC-11 (i-line)}}
 
*{{fl|DUV42P-Anti-Reflective-Coating.pdf|DUV42P (DUV) (For AR2 replacement)}}
  
*{{fl|DUV42P-Anti-Reflective-Coating.pdf|DUV42P (DUV) (For AR2 replacement)}}
 
*{{fl|DS-K101-304-Anti-Reflective-Coating.pdf|DS-K101-304 (DUV developable BARC)}}
  
*{{fl|DS-K101-304-Anti-Reflective-Coating.pdf|DS-K101-304 (DUV developable BARC)}}
−  
   
 
;<div id="AdhesionPromoters"><big>Adhesion Promoters</big></div>
  
;<div id="AdhesionPromoters"><big>Adhesion Promoters</big></div>
Line 388: Line 406:
 
*{{fl|OMNICOAT-revA.pdf|Omnicoat, SU-8 Adhesion Promoter}}
  
*{{fl|OMNICOAT-revA.pdf|Omnicoat, SU-8 Adhesion Promoter}}
 
*{{fl|OrmoPrime-NIL-Adhesion-RevA.pdf|Ormoprime08-Ormostsmp Adhesion Promoter}}
  
*{{fl|OrmoPrime-NIL-Adhesion-RevA.pdf|Ormoprime08-Ormostsmp Adhesion Promoter}}
−  
   
 
;<div id="SpinOnDielectrics"><big>Spin-On Dielectrics</big></div>
  
;<div id="SpinOnDielectrics"><big>Spin-On Dielectrics</big></div>
Line 400: Line 417:
 
*{{fl|512B-Datasheet-revA.pdf|Spin-on-Glass, Honeywell 512B (Not Photosensitive)}}
  
*{{fl|512B-Datasheet-revA.pdf|Spin-on-Glass, Honeywell 512B (Not Photosensitive)}}
 
*{{fl|512B-Application-Data-Bake-revA.pdf|Honeywell 512B Apps Data}}
  
*{{fl|512B-Application-Data-Bake-revA.pdf|Honeywell 512B Apps Data}}
−  
   
 
;<div id="Developers"><big>Developers</big></div>
  
;<div id="Developers"><big>Developers</big></div>
Line 409: Line 425:
 
*SU-8 Developer
  
*SU-8 Developer
 
*101A Developer (for DUV Flood Exposed PMGI)
  
*101A Developer (for DUV Flood Exposed PMGI)
−  
   
 
;<div id="PRRemovers"><big>Photoresist Removers</big></div>
  
;<div id="PRRemovers"><big>Photoresist Removers</big></div>
Line 421: Line 436:
 
|}
  
|}
   
−
[[Category:Processing]]
 +
[[Category: Processing]]
  +
[[category: Lithography]]
  +
[[category: Recipes]]

Revision as of 18:00, 8 April 2021

Table of Contents

Photolithography Processes

  1. UV Optical Lithography
  2. Lift-Off Recipes
    • Verified Recipes for lift-off using various photolith. tools
    • General educational description of this technique and it's limitations/considerations.
  3. E-beam Lithography
  4. Holography
    • For 1-D and 2-D gratings with 220nm nominal period, available on substrates up to 1 inch square.
    • Recipes for silicon substrates are provided, and have been translated to other substrates by users.
  5. Nanoimprinting Resists

Photolithography Chemicals/Materials

  1. Underlayers
    • These are used beneath resists for both adhesive purposes and to enable bi-layer lift-off profiles for use with photoresist.
    • Datasheets are provided.
  2. Anti-Reflection Coatings:
    • The Photoresist Recipes section contains recipes using these materials.
    • Bottom Anti-Reflection Coatings (BARC) are used in the stepper systems, underneath the resists to eliminate substrate reflections that can affect resolution and repeatability for small, near resolution limited, feature sizes.
    • Datasheets are provided for reference on use of the materials.
  3. Contrast Enhancement Materials (CEM)
    • The Photoresist Recipes section contains recipes using these materials.
    • Used for resolution enhancement. Not for use in contact aligners, typically used on I-Line Steppers.
    • Datasheets provided with usage info.
  4. Adhesion Promoters
    • These are used to improve wetting of photoresists to your substrate.
    • Datasheets are provided on use of these materials.
  5. Low-K Spin-on Dielectrics
  6. Developers and Removers
    • Datasheets provided for reference.
    • Remover and Photoresist Strippers are used to dissolve PR during lift-off or after etching.

Photolithography Recipes

  • R = Recipe is available. Clicking this link will take you to the recipe.
  • A = Material is available for use, but no recipes are provided.

Click the tool title to go to recipes for that tool.

Click the photoresist title to get the datasheet, also found in Stocked Chemicals + Datasheets.

Photolithography Recipes
Contact Aligner Recipes Stepper Recipes Direct-Write Litho. Recipes
Positive Resists SUSS MJB-3 SUSS MA-6 Stepper 1
(GCA 6300) 		Stepper 2
(AutoStep 200) 		Stepper 3
(ASML DUV) 		MLA150
(Heidelberg)
AZ4110 R R A A R
AZ4210 R R A A A
AZ4330RS R R A A R
AZ4620 A A A A A
OCG 825-35CS A A A A A
SPR 955 CM-0.9 A R R R R
SPR 955 CM-1.8 A A R R A
SPR 220-3.0 R R R R R
SPR 220-7.0 R R R R A
THMR-IP3600 HP D A A R
UV6-0.8 R
UV210-0.3 R
UV26-2.5 A
Negative Resists SUSS MJB-3 SUSS MA-6 Stepper 1
(GCA 6300) 		Stepper 2
(AutoStep 200) 		Stepper 3
(ASML DUV) 		MLA150
(Heidelberg)
AZ5214-EIR R R R R R
AZnLOF 2020 R R R R R
AZnLOF 2035 A A A A A
AZnLOF 2070 A A A A A
AZnLOF 5510 A A R R A
UVN30-0.8 R
SU-8 2005,2010,2015 A R A A A
SU-8 2075 A A A A R
NR9-1000,3000,6000PY R R A R A
Anti-Reflection Coatings SUSS MJB-3 SUSS MA-6 Stepper 1
(GCA 6300) 		Stepper 2
(AutoStep 200) 		Stepper 3
(ASML DUV) 		MLA150
(Heidelberg)
XHRiC-11 A A A
DUV42-P R
DS-K101-304 R
SUSS MJB-3 SUSS MA-6 Stepper 1
(GCA 6300) 		Stepper 2
(AutoStep 200) 		Stepper 3
(ASML DUV) 		MLA150
(Heidelberg)

Lift-Off Recipes

E-Beam Lithography Recipes (JEOL JBX-6300FS)

  • Under Development.

FIB Lithography Recipes (Raith Velion)

To Be Added

Automated Coat/Develop System Recipes (S-Cubed Flexi)

Recipes pre-loaded on the S-Cubed Flexi automated coat/bake/develop system. Only staff may write new recipes, contact the tool supervisor for more info.

To Be Added

Nanoimprinting Recipes

Holography Recipes

The Holography recipes here use the BARC layer XHRiC-11 & the high-res. I-Line photoresist THMR-IP3600HP-D.

Low-K Spin-On Dielectric Recipes

Chemicals Stocked + Datasheets

The following is a list of the lithography chemicals we stock in the lab, with links to the datasheets for each. The datasheets will often have important processing info such as spin-speed vs. thickness curves, typical process parameters, bake temps/times etc.

Positive Photoresists

i-line and broadband

DUV-248nm

Negative Photoresists

i-line and broadband

DUV-248nm

Underlayers
E-beam resists
Nanoimprinting
Contrast Enhancement Materials
Anti-Reflection Coatings
Adhesion Promoters
Spin-On Dielectrics

Low-K Spin-On Dielectrics such as Benzocyclobutane and Spin-on Glass

Developers
Photoresist Removers
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