InP Etch Rate and Selectivity (InP/SiO2)
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1.4 mT, 125/800W, Cl2/H2/Ar flow-rate=6.3/12.7/2 sccm, chuck temperature=200 C, and etch time=90s (Prior to the etch, do O2 plasma chamber clean for 15 minutes, then, chamber coating with the same recipe and a quarter dummy InP on carrier for 15 minutes. | ||||
Date | Sample# | InP Etch Rate (um/min) | Selectivity (InP/SiO2) | Profile SEM Picture |
10/4/2016 | InP#1613 | 0.92 | 8.9 | [1] |
12/1/2016 | InP#1614 | 0.96 | 12.1 | [2] |
12/15/2016 | InP#1615 | 0.91 | 9.3 | [3] |
1/23/2017 | InP#1701 | 0.93 | 9.4 | [4] |
2/7/2017 | InP#1702 | 0.75 | 7.7 | [5] |
2/21/2017 | InP#1703 | 0.91 | 11.3 | [6] |
3/21/2017 | InP#1704 | 1.01 | 11.3 | [7] |
4/20/2017 | inP#1705 | 0.88 | 10.2 | [8] |
5/4/2017 | InP#1706 | 0.84 | 11 | [9] |
5/19/2017 | InP#1707 | 0.82 | 9.9 | [10] |
7/6/2017 | InP#1708 | 0.98 | 12.1 | [11] |
8/16/2017 | InP#1709 | 0.76 | 8 | [12] |
8/28/2017 | InP#1710 | 1 | 11.7 | [13] |
10/11/2017 | InP#1711 | 1 | 11 | [14] |
10/23/2017 | InP#1712 | 1.11 | 13.1 | [15] |
11/21/2017 | InP#1713 | 1.04 | 12.1 | [16] |
12/7/2017 | InP#1714 | 0.96 | 10.4 | [17] |
1/2/2018 | InP#1801 | 1.44 | 14.3 | [18] |
3/1/2018 | InP#1802 | 0.96 | 9 | [19] |
4/5/2018 | InP#1803 | 1.05 | 11.9 | [20] |
4/10/2018 | InP#1804 | 1.12 | 12.8 | [21] |
4/26/2018 | InP#1805 | 1.29 | 13.6 | [22] |
5/22/2018 | InP#1806 | 0.88 | 8.4 | [23] |
8/7/2018 | InP#1807 | 0.81 | 8.0 | [24] |
10/3/2018 | InP#1808 | 1.01 | 13.7 | [25] |
12/10/2018 | InP#1809 | 1.01 | 11.4 | [26] |
1/31/2019 | InP#1901 | 0.88 | 9.7 | [27][28] |