InP Etch Rate and Selectivity (InP/SiO2)

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1.4 mT, 125/800W, Cl2/H2/Ar flow-rate=6.3/12.7/2 sccm, chuck temperature=200 C, and etch time=90s (Prior to the etch, do O2 plasma chamber clean for 15 minutes, then, chamber coating with the same recipe and a quarter dummy InP on carrier for 15 minutes.
Date  Sample# InP Etch Rtae (mm/min) Selectivity (InP/SiO2)
4/26/2018 InP#1805 1.29 13.6

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