Difference between revisions of "InP Etch Rate and Selectivity (InP/SiO2)"

From UCSB Nanofab Wiki
Jump to: navigation, search
(add SEM)
(Text replacement - "www.nanotech.ucsb.edu/wiki/" to "wiki.nanotech.ucsb.edu/wiki/")
Line 13: Line 13:
 
|0.92
 
|0.92
 
|8.9
 
|8.9
|[https://www.nanotech.ucsb.edu/wiki/images/9/9b/IP161332.pdf]
+
|[https://wiki.nanotech.ucsb.edu/wiki/images/9/9b/IP161332.pdf]
 
|-
 
|-
 
|12/1/2016
 
|12/1/2016
Line 19: Line 19:
 
|0.96
 
|0.96
 
|12.1
 
|12.1
|[https://www.nanotech.ucsb.edu/wiki/images/e/ed/IP161421.pdf]
+
|[https://wiki.nanotech.ucsb.edu/wiki/images/e/ed/IP161421.pdf]
 
|-
 
|-
 
|12/15/2016
 
|12/15/2016
Line 25: Line 25:
 
|0.91
 
|0.91
 
|9.3
 
|9.3
|[https://www.nanotech.ucsb.edu/wiki/images/6/64/IP161510.pdf]
+
|[https://wiki.nanotech.ucsb.edu/wiki/images/6/64/IP161510.pdf]
 
|-
 
|-
 
|1/23/2017
 
|1/23/2017
Line 31: Line 31:
 
|0.93
 
|0.93
 
|9.4
 
|9.4
|[https://www.nanotech.ucsb.edu/wiki/images/7/7f/IP170106.pdf]
+
|[https://wiki.nanotech.ucsb.edu/wiki/images/7/7f/IP170106.pdf]
 
|-
 
|-
 
|2/7/2017
 
|2/7/2017
Line 37: Line 37:
 
|0.75
 
|0.75
 
|7.7
 
|7.7
|[https://www.nanotech.ucsb.edu/wiki/images/2/2f/IP170208.pdf]
+
|[https://wiki.nanotech.ucsb.edu/wiki/images/2/2f/IP170208.pdf]
 
|-
 
|-
 
|2/21/2017
 
|2/21/2017
Line 43: Line 43:
 
|0.91
 
|0.91
 
|11.3
 
|11.3
|[https://www.nanotech.ucsb.edu/wiki/images/b/b8/IP170302.pdf]
+
|[https://wiki.nanotech.ucsb.edu/wiki/images/b/b8/IP170302.pdf]
 
|-
 
|-
 
|3/21/2017
 
|3/21/2017
Line 49: Line 49:
 
|1.01
 
|1.01
 
|11.3
 
|11.3
|[https://www.nanotech.ucsb.edu/wiki/images/f/fd/IP170404.pdf]
+
|[https://wiki.nanotech.ucsb.edu/wiki/images/f/fd/IP170404.pdf]
 
|-
 
|-
 
|4/20/2017
 
|4/20/2017
Line 55: Line 55:
 
|0.88
 
|0.88
 
|10.2
 
|10.2
|[https://www.nanotech.ucsb.edu/wiki/images/5/5b/IP170505.pdf]
+
|[https://wiki.nanotech.ucsb.edu/wiki/images/5/5b/IP170505.pdf]
 
|-
 
|-
 
|5/4/2017
 
|5/4/2017
Line 61: Line 61:
 
|0.84
 
|0.84
 
|11
 
|11
|[https://www.nanotech.ucsb.edu/wiki/images/d/d1/IP170603.pdf]
+
|[https://wiki.nanotech.ucsb.edu/wiki/images/d/d1/IP170603.pdf]
 
|-
 
|-
 
|5/19/2017
 
|5/19/2017
Line 67: Line 67:
 
|0.82
 
|0.82
 
|9.9
 
|9.9
|[https://www.nanotech.ucsb.edu/wiki/images/7/7f/IP170706.pdf]
+
|[https://wiki.nanotech.ucsb.edu/wiki/images/7/7f/IP170706.pdf]
 
|-
 
|-
 
|7/6/2017
 
|7/6/2017
Line 73: Line 73:
 
|0.98
 
|0.98
 
|12.1
 
|12.1
|[https://www.nanotech.ucsb.edu/wiki/images/a/ac/IP172520.pdf]
+
|[https://wiki.nanotech.ucsb.edu/wiki/images/a/ac/IP172520.pdf]
 
|-
 
|-
 
|8/16/2017
 
|8/16/2017
Line 79: Line 79:
 
|0.76
 
|0.76
 
|8
 
|8
|[https://www.nanotech.ucsb.edu/wiki/images/f/fa/IP172805.pdf]
+
|[https://wiki.nanotech.ucsb.edu/wiki/images/f/fa/IP172805.pdf]
 
|-
 
|-
 
|8/28/2017
 
|8/28/2017
Line 85: Line 85:
 
|1
 
|1
 
|11.7
 
|11.7
|[https://www.nanotech.ucsb.edu/wiki/images/a/aa/IP172905.pdf]
+
|[https://wiki.nanotech.ucsb.edu/wiki/images/a/aa/IP172905.pdf]
 
|-
 
|-
 
|10/11/2017
 
|10/11/2017
Line 91: Line 91:
 
|1
 
|1
 
|11
 
|11
|[https://www.nanotech.ucsb.edu/wiki/images/9/97/IP173009.pdf]
+
|[https://wiki.nanotech.ucsb.edu/wiki/images/9/97/IP173009.pdf]
 
|-
 
|-
 
|10/23/2017
 
|10/23/2017
Line 97: Line 97:
 
|1.11
 
|1.11
 
|13.1
 
|13.1
|[https://www.nanotech.ucsb.edu/wiki/images/4/41/IP173107.pdf]
+
|[https://wiki.nanotech.ucsb.edu/wiki/images/4/41/IP173107.pdf]
 
|-
 
|-
 
|11/21/2017
 
|11/21/2017
Line 103: Line 103:
 
|1.04
 
|1.04
 
|12.1
 
|12.1
|[https://www.nanotech.ucsb.edu/wiki/images/0/02/IP173203.pdf]
+
|[https://wiki.nanotech.ucsb.edu/wiki/images/0/02/IP173203.pdf]
 
|-
 
|-
 
|12/7/2017
 
|12/7/2017
Line 109: Line 109:
 
|0.96
 
|0.96
 
|10.4
 
|10.4
|[https://www.nanotech.ucsb.edu/wiki/images/0/03/IP173306.pdf]
+
|[https://wiki.nanotech.ucsb.edu/wiki/images/0/03/IP173306.pdf]
 
|-
 
|-
 
|1/2/2018
 
|1/2/2018
Line 115: Line 115:
 
|1.44
 
|1.44
 
|14.3
 
|14.3
|[https://www.nanotech.ucsb.edu/wiki/images/0/0d/IP180104.pdf]
+
|[https://wiki.nanotech.ucsb.edu/wiki/images/0/0d/IP180104.pdf]
 
|-
 
|-
 
|3/1/2018
 
|3/1/2018
Line 121: Line 121:
 
|0.96
 
|0.96
 
|9
 
|9
|[https://www.nanotech.ucsb.edu/wiki/images/6/65/IP180207.pdf]
+
|[https://wiki.nanotech.ucsb.edu/wiki/images/6/65/IP180207.pdf]
 
|-
 
|-
 
|4/5/2018
 
|4/5/2018
Line 127: Line 127:
 
|1.05
 
|1.05
 
|11.9
 
|11.9
|[https://www.nanotech.ucsb.edu/wiki/images/c/c7/IP180304.pdf]
+
|[https://wiki.nanotech.ucsb.edu/wiki/images/c/c7/IP180304.pdf]
 
|-
 
|-
 
|4/10/2018
 
|4/10/2018
Line 133: Line 133:
 
|1.12
 
|1.12
 
|12.8
 
|12.8
|[https://www.nanotech.ucsb.edu/wiki/images/1/17/IP180406.pdf]
+
|[https://wiki.nanotech.ucsb.edu/wiki/images/1/17/IP180406.pdf]
 
|-
 
|-
 
|4/26/2018
 
|4/26/2018
Line 139: Line 139:
 
|1.29
 
|1.29
 
|13.6
 
|13.6
|[https://www.nanotech.ucsb.edu/wiki/images/c/c8/IP180508.pdf]
+
|[https://wiki.nanotech.ucsb.edu/wiki/images/c/c8/IP180508.pdf]
 
|-
 
|-
 
|5/22/2018
 
|5/22/2018
Line 145: Line 145:
 
|0.88
 
|0.88
 
|8.4
 
|8.4
|[https://www.nanotech.ucsb.edu/wiki/images/e/e1/IP180606.pdf]
+
|[https://wiki.nanotech.ucsb.edu/wiki/images/e/e1/IP180606.pdf]
 
|-
 
|-
 
|8/7/2018
 
|8/7/2018
Line 151: Line 151:
 
|0.81
 
|0.81
 
|8.0
 
|8.0
|[https://www.nanotech.ucsb.edu/wiki/images/f/fb/IP180705.pdf]
+
|[https://wiki.nanotech.ucsb.edu/wiki/images/f/fb/IP180705.pdf]
 
|-
 
|-
 
|10/3/2018
 
|10/3/2018
Line 157: Line 157:
 
|1.01
 
|1.01
 
|13.7
 
|13.7
|[https://www.nanotech.ucsb.edu/wiki/images/e/e5/IP180805.pdf]
+
|[https://wiki.nanotech.ucsb.edu/wiki/images/e/e5/IP180805.pdf]
 
|-
 
|-
 
|12/10/2018
 
|12/10/2018
Line 163: Line 163:
 
|1.01
 
|1.01
 
|11.4
 
|11.4
|[https://www.nanotech.ucsb.edu/wiki/images/8/84/IP180909.pdf]
+
|[https://wiki.nanotech.ucsb.edu/wiki/images/8/84/IP180909.pdf]
 
|-
 
|-
 
|1/31/2019
 
|1/31/2019
Line 169: Line 169:
 
|0.88
 
|0.88
 
|9.7
 
|9.7
|[https://www.nanotech.ucsb.edu/wiki/images/b/b7/IP190101.pdf][https://www.nanotech.ucsb.edu/wiki/images/0/06/IP190103.pdf]
+
|[https://wiki.nanotech.ucsb.edu/wiki/images/b/b7/IP190101.pdf][https://wiki.nanotech.ucsb.edu/wiki/images/0/06/IP190103.pdf]
 
|}
 
|}

Revision as of 18:35, 6 April 2020

1.4 mT, 125/800W, Cl2/H2/Ar flow-rate=6.3/12.7/2 sccm, chuck temperature=200 C, and etch time=90s (Prior to the etch, do O2 plasma chamber clean for 15 minutes, then, chamber coating with the same recipe and a quarter dummy InP on carrier for 15 minutes.
Date  Sample# InP Etch Rate (um/min) Selectivity (InP/SiO2) Profile SEM Picture
10/4/2016 InP#1613 0.92 8.9 [1]
12/1/2016 InP#1614 0.96 12.1 [2]
12/15/2016 InP#1615 0.91 9.3 [3]
1/23/2017 InP#1701 0.93 9.4 [4]
2/7/2017 InP#1702 0.75 7.7 [5]
2/21/2017 InP#1703 0.91 11.3 [6]
3/21/2017 InP#1704 1.01 11.3 [7]
4/20/2017 inP#1705 0.88 10.2 [8]
5/4/2017 InP#1706 0.84 11 [9]
5/19/2017 InP#1707 0.82 9.9 [10]
7/6/2017 InP#1708 0.98 12.1 [11]
8/16/2017 InP#1709 0.76 8 [12]
8/28/2017 InP#1710 1 11.7 [13]
10/11/2017 InP#1711 1 11 [14]
10/23/2017 InP#1712 1.11 13.1 [15]
11/21/2017 InP#1713 1.04 12.1 [16]
12/7/2017 InP#1714 0.96 10.4 [17]
1/2/2018 InP#1801 1.44 14.3 [18]
3/1/2018 InP#1802 0.96 9 [19]
4/5/2018 InP#1803 1.05 11.9 [20]
4/10/2018 InP#1804 1.12 12.8 [21]
4/26/2018 InP#1805 1.29 13.6 [22]
5/22/2018 InP#1806 0.88 8.4 [23]
8/7/2018 InP#1807 0.81 8.0 [24]
10/3/2018 InP#1808 1.01 13.7 [25]
12/10/2018 InP#1809 1.01 11.4 [26]
1/31/2019 InP#1901 0.88 9.7 [27][28]