Difference between revisions of "InP Etch Rate and Selectivity (InP/SiO2)"

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|Selectivity (InP/SiO2)
  
|Selectivity (InP/SiO2)
 
|-
  
|-
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|10/4/2016
−
|
  
  +
|InP#1613
−
|
  
  +
|0.92
−
|
  
−
|
 +
|8.9
 
|-
  
|-
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|12/1/2016
−
|
  
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|InP#1614
−
|
  
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|0.96
−
|
  
  +
|12.1
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|
  
  +
|-
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|12/15/2016
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|InP#1615
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|0.91
  +
|9.3
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|-
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|1/23/2017
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|InP#1701
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|0.93
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|9.4
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|-
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|2/7/2017
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|InP#1702
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|0.75
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|7.7
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|-
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|2/21/2017
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|InP#1703
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|0.91
  +
|11.3
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|-
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|3/21/2017
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|InP#1704
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|1.01
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|11.3
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|-
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|4/20/2017
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|inP#1705
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|0.88
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|10.2
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|-
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|5/4/2017
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|InP#1706
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|0.84
  +
|11
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|-
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|5/19/2017
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|InP#1707
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|0.82
  +
|9.9
  +
|-
  +
|7/6/2017
  +
|InP#1708
  +
|0.98
  +
|12.1
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|-
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|8/16/2017
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|InP#1709
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|0.76
  +
|8
  +
|-
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|8/28/2017
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|InP#1710
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|1
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|11.7
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|-
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|10/11/2017
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|InP#1711
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|1
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|11
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|-
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|10/23/2017
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|InP#1712
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|1.11
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|13.1
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|-
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|11/21/2017
  +
|InP#1713
  +
|1.04
  +
|12.1
  +
|-
  +
|12/7/2017
  +
|InP#1714
  +
|0.96
  +
|10.4
  +
|-
  +
|1/2/2018
  +
|InP#1801
  +
|1.44
  +
|14.3
  +
|-
  +
|3/1/2018
  +
|InP#1802
  +
|0.96
  +
|9
  +
|-
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|4/5/2018
  +
|InP#1803
  +
|1.05
  +
|11.9
  +
|-
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|4/10/2018
  +
|InP#1804
  +
|1.12
  +
|12.8
 
|-
  
|-
 
|4/26/2018
  
|4/26/2018

Revision as of 11:05, 2 May 2018

1.4 mT, 125/800W, Cl2/H2/Ar flow-rate=6.3/12.7/2 sccm, chuck temperature=200 C, and etch time=90s (Prior to the etch, do O2 plasma chamber clean for 15 minutes, then, chamber coating with the same recipe and a quarter dummy InP on carrier for 15 minutes.
Date  Sample# InP Etch Rate (mm/min) Selectivity (InP/SiO2)
10/4/2016 InP#1613 0.92 8.9
12/1/2016 InP#1614 0.96 12.1
12/15/2016 InP#1615 0.91 9.3
1/23/2017 InP#1701 0.93 9.4
2/7/2017 InP#1702 0.75 7.7
2/21/2017 InP#1703 0.91 11.3
3/21/2017 InP#1704 1.01 11.3
4/20/2017 inP#1705 0.88 10.2
5/4/2017 InP#1706 0.84 11
5/19/2017 InP#1707 0.82 9.9
7/6/2017 InP#1708 0.98 12.1
8/16/2017 InP#1709 0.76 8
8/28/2017 InP#1710 1 11.7
10/11/2017 InP#1711 1 11
10/23/2017 InP#1712 1.11 13.1
11/21/2017 InP#1713 1.04 12.1
12/7/2017 InP#1714 0.96 10.4
1/2/2018 InP#1801 1.44 14.3
3/1/2018 InP#1802 0.96 9
4/5/2018 InP#1803 1.05 11.9
4/10/2018 InP#1804 1.12 12.8
4/26/2018 InP#1805 1.29 13.6

https://www.nanotech.ucsb.edu/wiki/images/a/ab/IP180506.jpg

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