Difference between revisions of "InP Etch Rate and Selectivity (InP/SiO2)"
Jump to navigation
Jump to search
Line 4: | Line 4: | ||
|Date |
|Date |
||
|Sample# |
|Sample# |
||
− | |InP Etch |
+ | |InP Etch Rate (mm/min) |
|Selectivity (InP/SiO2) |
|Selectivity (InP/SiO2) |
||
|- |
|- |
Revision as of 10:38, 2 May 2018
1.4 mT, 125/800W, Cl2/H2/Ar flow-rate=6.3/12.7/2 sccm, chuck temperature=200 C, and etch time=90s (Prior to the etch, do O2 plasma chamber clean for 15 minutes, then, chamber coating with the same recipe and a quarter dummy InP on carrier for 15 minutes. | |||
Date | Sample# | InP Etch Rate (mm/min) | Selectivity (InP/SiO2) |
4/26/2018 | InP#1805 | 1.29 | 13.6 |