Difference between revisions of "InP Etch Rate and Selectivity (InP/SiO2)"
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| colspan="3" |1.4 mT, 125/800W, Cl2/H2/Ar flow-rate=6.3/12.7/2 sccm, chuck temperature=200 C, and etch time=90s (Prior to the etch, do O2 plasma chamber clean for 15 minutes, then, chamber coating with the same recipe and a quarter dummy InP on carrier |
| colspan="3" |1.4 mT, 125/800W, Cl2/H2/Ar flow-rate=6.3/12.7/2 sccm, chuck temperature=200 C, and etch time=90s (Prior to the etch, do O2 plasma chamber clean for 15 minutes, then, chamber coating with the same recipe and a quarter dummy InP on carrier |
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| − | |InP Etch Rtae ( |
+ | |InP Etch Rtae (mm/min) |
|Selectivity (InP/SiO2) |
|Selectivity (InP/SiO2) |
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|1.12 |
|1.12 |
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|12.8 |
|12.8 |
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| + | |6/26/2018 |
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| + | |1.29 |
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| + | |13.6 |
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Revision as of 15:55, 27 April 2018
| 1.4 mT, 125/800W, Cl2/H2/Ar flow-rate=6.3/12.7/2 sccm, chuck temperature=200 C, and etch time=90s (Prior to the etch, do O2 plasma chamber clean for 15 minutes, then, chamber coating with the same recipe and a quarter dummy InP on carrier | ||
| Date | InP Etch Rtae (mm/min) | Selectivity (InP/SiO2) |
| 4/10/2018 | 1.12 | 12.8 |
| 6/26/2018 | 1.29 | 13.6 |