InP Etch Rate and Selectivity (InP/SiO2)

1.4 mT, 125/800W, Cl2/H2/Ar flow-rate=6.3/12.7/2 sccm, chuck temperature=200 C, and etch time=90s (Prior to the etch, do O2 plasma chamber clean for 15 minutes, then, chamber coating with the same recipe and a quarter dummy InP on carrier for 15 minutes.
Date	Sample#	InP Etch Rate (um/min)	Selectivity (InP/SiO2)
10/4/2016	InP#1613	0.92	8.9
12/1/2016	InP#1614	0.96	12.1
12/15/2016	InP#1615	0.91	9.3
1/23/2017	InP#1701	0.93	9.4
2/7/2017	InP#1702	0.75	7.7
2/21/2017	InP#1703	0.91	11.3
3/21/2017	InP#1704	1.01	11.3
4/20/2017	inP#1705	0.88	10.2
5/4/2017	InP#1706	0.84	11
5/19/2017	InP#1707	0.82	9.9
7/6/2017	InP#1708	0.98	12.1
8/16/2017	InP#1709	0.76	8
8/28/2017	InP#1710	1	11.7
10/11/2017	InP#1711	1	11
10/23/2017	InP#1712	1.11	13.1
11/21/2017	InP#1713	1.04	12.1
12/7/2017	InP#1714	0.96	10.4
1/2/2018	InP#1801	1.44	14.3
3/1/2018	InP#1802	0.96	9
4/5/2018	InP#1803	1.05	11.9
4/10/2018	InP#1804	1.12	12.8
4/26/2018	InP#1805	1.29	13.6
5/22/2018	InP#1806	0.88	8.4
8/7/2018	InP#1807	0.81	8.0
10/3/2018	InP#1808	1.01	13.7
12/10/2018	InP#1809	1.01	11.4

https://www.nanotech.ucsb.edu/wiki/index.php/File:IP180805.pdf