Difference between revisions of "IR Aligner (SUSS MJB-3 IR)"

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(Created page with "{{tool|{{PAGENAME}} |picture=SussAlignerIR.jpg |type = Lithography |super= Don Freeborn |phone=(805)839-3918x216 |location=Bay 6 |email=freeborn@ece.ucsb.edu |description = Mask …")
 
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**±5% over 3" diameter
 
**±5% over 3" diameter
  
=Special Notes / Additional Comments
+
=Special Notes / Additional Comments=
 
*All units have 200 W mercury lamps
 
*All units have 200 W mercury lamps
 
*Infrared Transmission Alignment System
 
*Infrared Transmission Alignment System

Revision as of 14:04, 30 June 2012

IR Aligner (SUSS MJB-3 IR)
SussAlignerIR.jpg
Tool Type Lithography
Location Bay 6
Supervisor Don Freeborn
Supervisor Phone (805) 893-7975
Supervisor E-Mail dfreeborn@ece.ucsb.edu
Description Mask Aligner - MJB 3 UV400 IR
Manufacturer Karl Suss America


About

This is a high-performance mask aligner used for contact exposure processes. It is a versatile, user-friendly compact unit that has a foot print of 600 x 800 mm². The resolution (depending on contact mode, optics and exposure wavelength and "operator technique") is far into the submicron region. Our left unit is configured for the near-UV window (365 and 405 nm) and both left and right units have the "vacuum contact" option extending resolution to ~0.5 microns. Higher resolution optic systems that can be supplied by Suss are given below. The standard soft and hard contact modes of mechanical and pneumatic pressure respectively, only give resolution to 1-2 microns. Exposures can be done on substrates from small "piece parts" of less than 1 cm square to substrates of 3 inch diameter or square. Special black chucks may be used for transparent materials. For backside alignment through opaque our IR aligner can be used and is described below. Masks up to 4 inches in size can be used although patterns should be well away from the maskplate edges due to the fact such plates can only be shifted ~ x mm and substrate chuck +/- 3 mm.

Detailed Specifications

  • Wafer size: 3" max. for vacuum mode; 4” for soft contact (3” x 3” exposure area)
  • Substrate size: 3" x 3" max.
  • Wafer / substrate thickness: 0-4.5 mm
  • Exposure optics:
    • Left unit: 280-450 nm/200 W mercury lamp
    • Right unit: 350-450 nm/200 W mercury lamp
    • IR unit: 280-450 nm/200 W mercury lamp
  • Additional manufacturer options (none installed on our systems):
    • DUV (polychromatic): 240-260 nm/350 W Cd-Xe lamp; 0.2 micron resolution (PMMA)
    • DUV (monochromatic): 248 nm/KrF excimer laser; 0.3 micron resolution (PMMA)
    • 193 nm/ArF excimer laser; 0.2 micron resolution (PMMA)
  • Uniformity:
    • ±3% over 2" diameter
    • ±5% over 3" diameter

Special Notes / Additional Comments

  • All units have 200 W mercury lamps
  • Infrared Transmission Alignment System
  • All models can be equipped for back side alignment using infrared light; this is used when a mask needs to be aligned to features on the substrate backside but exposed to light on the front or resist side
  • For processes using this tool please go to the contact lithography process page
  • This includes:
  • Modified alignment stage
  • Motor positioned IR light source under chuck
  • Special glass chuck transparent to IR but opaque to UV and visible light
  • In-line video camera/monitor for substrate backside viewing and alignment to front-side
  • (Note: The vacuum contact mode is not allowed in the ITA System)