Difference between revisions of "IR Aligner (SUSS MJB-3 IR)"

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==About==
 
==About==
This is a high-performance contact mask aligner with backside alignment capability for opaque materials using IR. It is a versatile, user-friendly compact unit that has a foot print of 600 x 800 mm². The resolution (depending on contact mode, optics and exposure wavelength and "operator technique") is far into the submicron region. The aligner is configured for the near-UV window (365 and 405 nm) and both left and has the "vacuum contact" option extending resolution to ~0.5 microns. Higher resolution optic systems that can be supplied by Suss are given below. The standard soft and hard contact modes of mechanical and pneumatic pressure respectively, only give resolution to 1-2 microns. Exposures can be done on substrates from small "piece parts" of less than 1 cm square to substrates of 3 inch diameter or square. Masks up to 4 inches in size can be used although patterns should be well away from the maskplate edges due to the fact such plates can only be shifted ~ x mm and substrate chuck +/- 3 mm.
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This is a high-performance contact mask aligner with backside alignment capability for opaque materials using IR. It is a versatile, user-friendly compact unit that has a foot print of 600 x 800 mm². The resolution (depending on contact mode, optics and exposure wavelength and "operator technique") is down to 1 micron (hard contact). The aligner is configured for the near-UV window (365 and 405 nm). Exposures can be done on substrates from small "piece parts" of less than 1 cm square to substrates of 3 inch diameter or square. Masks up to 4 inches in size can be used although patterns should be well away from the mask plate edges due to the fact such plates can only be shifted a limited distance in the  x and y.
  
 
==Detailed Specifications==
 
==Detailed Specifications==
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*Exposure optics:
 
*Exposure optics:
 
**280-450 nm/200 W mercury lamp (can filter to 350 nm)
 
**280-450 nm/200 W mercury lamp (can filter to 350 nm)
*Additional manufacturer options (none installed on our systems):
 
**DUV (polychromatic): 240-260 nm/350 W Cd-Xe lamp; 0.2 micron resolution (PMMA)
 
**DUV (monochromatic): 248 nm/KrF excimer laser; 0.3 micron resolution (PMMA)
 
**193 nm/ArF excimer laser; 0.2 micron resolution (PMMA)
 
 
*Uniformity:
 
*Uniformity:
 
**±3% over 2" diameter
 
**±3% over 2" diameter
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==Special Notes / Additional Comments==
 
==Special Notes / Additional Comments==
  
*All units have 200 W mercury lamps
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*200 W mercury lamp
*Infrared Transmission Alignment System
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*Top side alignment (visible) can be performed on this aligner as well with a quick tooling change
*All models can be equipped for back side alignment using infrared light; this is used when a mask needs to be aligned to features on the substrate backside but exposed to light on the front or resist side
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*Infrared Transmission Alignment System:
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**Motor positioned IR light source under chuck
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**Special glass chucks transparent to IR but opaque to UV and visible light
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**In-line video camera/monitor for substrate backside viewing and alignment to front-side
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*This aligner does not support vacuum contact mode
 
*For processes using this tool please go to the contact lithography process page
 
*For processes using this tool please go to the contact lithography process page
*This includes:
 
*Modified alignment stage
 
*Motor positioned IR light source under chuck
 
*Special glass chuck transparent to IR but opaque to UV and visible light
 
*In-line video camera/monitor for substrate backside viewing and alignment to front-side
 
*(Note: The vacuum contact mode is not allowed in the ITA System)
 
  
 
==Documentation==
 
==Documentation==
  
*[https://www.nanotech.ucsb.edu/wiki/images/d/de/MJB_3_SOP.pdf MJB 3 Standard Operating Procedure]
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*[https://wiki.nanotech.ucsb.edu/wiki/images/d/de/MJB_3_SOP.pdf MJB 3 Standard Operating Procedure]
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*[https://wiki.nanotech.ucsb.edu/w/images/1/11/MJB_3_IR_Alignment_Mode_Conversion.pdf MJB 3 IR Alignment Mode Conversion Procedure]
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*[https://wiki.nanotech.ucsb.edu/w/images/7/70/MJB_3_IR_Camera_SOP_Rev_B.pdf MJB 3 IR Camera Operating Procedure]

Latest revision as of 10:56, 7 August 2020

IR Aligner (SUSS MJB-3 IR)
SussAlignerIR.jpg
Tool Type Lithography
Location Bay 6
Supervisor Lee Sawyer
Supervisor Phone (805) 893-2123
Supervisor E-Mail lee_sawyer@ucsb.edu
Description Mask Aligner - MJB 3 UV400 IR
Manufacturer Karl Suss America
Sign up for this tool


About

This is a high-performance contact mask aligner with backside alignment capability for opaque materials using IR. It is a versatile, user-friendly compact unit that has a foot print of 600 x 800 mm². The resolution (depending on contact mode, optics and exposure wavelength and "operator technique") is down to 1 micron (hard contact). The aligner is configured for the near-UV window (365 and 405 nm). Exposures can be done on substrates from small "piece parts" of less than 1 cm square to substrates of 3 inch diameter or square. Masks up to 4 inches in size can be used although patterns should be well away from the mask plate edges due to the fact such plates can only be shifted a limited distance in the x and y.

Detailed Specifications

  • Wafer size: 3" max. for vacuum mode; 4” for soft contact (3” x 3” exposure area)
  • Substrate size: 3" x 3" max.
  • Wafer / substrate thickness: 0-4.5 mm
  • Exposure optics:
    • 280-450 nm/200 W mercury lamp (can filter to 350 nm)
  • Uniformity:
    • ±3% over 2" diameter
    • ±5% over 3" diameter

Special Notes / Additional Comments

  • 200 W mercury lamp
  • Top side alignment (visible) can be performed on this aligner as well with a quick tooling change
  • Infrared Transmission Alignment System:
    • Motor positioned IR light source under chuck
    • Special glass chucks transparent to IR but opaque to UV and visible light
    • In-line video camera/monitor for substrate backside viewing and alignment to front-side
  • This aligner does not support vacuum contact mode
  • For processes using this tool please go to the contact lithography process page

Documentation