Difference between revisions of "ICP Etching Recipes"

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*[[media:43-Issue_with_the_etch_of_InP-InGaAs-and-_InAlAs-b.pdf|InGaAs-InAlAs Etch Issure (Cl<sub>2</sub>H<sub>2</sub> Ar 200C)]]
 
*[[media:43-Issue_with_the_etch_of_InP-InGaAs-and-_InAlAs-b.pdf|InGaAs-InAlAs Etch Issure (Cl<sub>2</sub>H<sub>2</sub> Ar 200C)]]
 
*[[media:50-InP_Etch-2-17-2016.pdf|InP Etch (Cl<sub>2</sub>H<sub>2</sub>Ar 200C)2-17-2016]]
 
*[[media:50-InP_Etch-2-17-2016.pdf|InP Etch (Cl<sub>2</sub>H<sub>2</sub>Ar 200C)2-17-2016]]
*[[media:|InP Etch (Cl<sub>2</sub>H<sub>2</sub>Ar 200C) Start on 6-3-2016]]
+
*[[media:InP_Etch_using_Unaxis_PM1_at_200_C-G.pdf|InP Etch (Cl<sub>2</sub>H<sub>2</sub>Ar 200C) Start on 6-3-2016]]
  
 
==GaN Etch (Unaxis VLR)==
 
==GaN Etch (Unaxis VLR)==

Revision as of 13:52, 5 October 2016

Back to Dry Etching Recipes.

Si Deep RIE (PlasmaTherm/Bosch Etch)

Bosch and Release Etch (Si Deep RIE)

Single-step Si Etching (not Bosch Process!) (Si Deep RIE)

ICP Etch 1 (Panasonic E626I)

SiO2 Etching (Panasonic 1)

SiNx Etching (Panasonic 1)

Al Etch (Panasonic 1)

Cr Etch (Panasonic 1)

Ti Etch (Panasonic 1)

W-TiW Etch (Panasonic 1)

GaAs-AlGaAs Etch (Panasonic 1)

GaN Etch (Panasonic 1)

SiC Etch (Panasonic 1)

Sapphire Etch (Panasonic 1)

ICP Etch 2 (Panasonic E640)

Recipes starting points for materials without processes listed can be obtained from Panasonic1 recipe files. The chambers are slightly different, but essentially the same, requiring only small program changes to obtain similar results.

SiO2 Etching (Panasonic 2)

SiNx Etching (Panasonic 2)

Al Etch (Panasonic 2)

GaAs Etch (Panasonic 2)

ICP-Etch (Unaxis VLR)

GaAs-AlGaAs Etch (Unaxis VLR)

InP-InGaAs-InAlAs Etch (Unaxis VLR)

GaN Etch (Unaxis VLR)

GaSb Etch (Unaxis VLR)