Difference between revisions of "ICP Etching Recipes"

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*[[media:17-InP%26InGaAs_etch-Cl2H2Ar-Unaxis-VLR.pdf|InP-InGaAs Etch Profile (Cl<sub>2</sub>H<sub>2</sub> Ar 200C)]]
 
*[[media:17-InP%26InGaAs_etch-Cl2H2Ar-Unaxis-VLR.pdf|InP-InGaAs Etch Profile (Cl<sub>2</sub>H<sub>2</sub> Ar 200C)]]
 
*[[media:43-Issue_with_the_etch_of_InP-InGaAs-and-_InAlAs-b.pdf|InGaAs-InAlAs Etch Issure (Cl<sub>2</sub>H<sub>2</sub> Ar 200C)]]
 
*[[media:43-Issue_with_the_etch_of_InP-InGaAs-and-_InAlAs-b.pdf|InGaAs-InAlAs Etch Issure (Cl<sub>2</sub>H<sub>2</sub> Ar 200C)]]
*[[media:|InP Etch (Cl<sub>2</sub>N<sub>2</sub>Ar 200C)2-17-2016]]
+
*[[media:50-InP_Etch-2-17-2016.pdf|InP Etch (Cl<sub>2</sub>N<sub>2</sub>Ar 200C)2-17-2016]]
  
 
==GaN Etch (Unaxis VLR)==
 
==GaN Etch (Unaxis VLR)==
 
*[[media:09-Plasma_Etching_of_GaN-UnaxisPM1.pdf|GaN Etch Recipe (Cl<sub>2</sub>BCl<sub>3</sub> Ar 85C)]]
 
*[[media:09-Plasma_Etching_of_GaN-UnaxisPM1.pdf|GaN Etch Recipe (Cl<sub>2</sub>BCl<sub>3</sub> Ar 85C)]]

Revision as of 15:25, 17 February 2016

Back to Dry Etching Recipes.

Si Deep RIE (PlasmaTherm/Bosch Etch)

Single-step Si Etching (not Bosch Process!) (Si Deep RIE)

ICP Etch 1 (Panasonic E626I)

SiO2 Etching (Panasonic 1)

SiNx Etching (Panasonic 1)

Al Etch (Panasonic 1)

Cr Etch (Panasonic 1)

Ti Etch (Panasonic 1)

W-TiW Etch (Panasonic 1)

GaAs-AlGaAs Etch (Panasonic 1)

GaN Etch (Panasonic 1)

SiC Etch (Panasonic 1)

Sapphire Etch (Panasonic 1)

ICP Etch 2 (Panasonic E640)

Recipes starting points for materials without processes listed can be obtained from Panasonic1 recipe files. The chambers are slightly different, but essentially the same, requiring only small program changes to obtain similar results.

SiO2 Etching (Panasonic 2)

SiNx Etching (Panasonic 2)

Al Etch (Panasonic 2)

GaAs Etch (Panasonic 2)

ICP-Etch (Unaxis VLR)

GaAs-AlGaAs Etch (Unaxis VLR)

InP-InGaAs-InAlAs Etch (Unaxis VLR)

GaN Etch (Unaxis VLR)