ICP Etch 2 (Panasonic E626I)

ICP Etch 2 (Panasonic E626I) Tool Type Dry Etch Location Bay 2 Supervisor Mike Silva Supervisor Phone (805) 893-3096 Supervisor E-Mail silva@ece.ucsb.edu Description ? Manufacturer Panasonic Factory Solutions Dry Etch Recipes Sign up for this tool

About

This is a single-chamber tool for etching of a variety of materials. The chamber is configured as an ICP etching tool with 1000 W ICP power, 500 W RF substrate power, and RT - 80°C operation with back-side He cooling and an electrostatic chuck to maintain controlled surface temperatures during etching. This chamber has Cl₂, BCl₃, CF₄, CHF₃, SF₆, Ar, N₂, and O₂ for gas sources and can be used to etch a variety of materials from SiO₂ to metals to compound semiconductors. The chamber evacuated with a 2000 lpm Osaka Vacuum magnetically levitated turbo pump, allowing for fast pump down.

Detailed Specifications

• 1000 W ICP source, 500 W RF Sample Bias Source in etching chamber
• RT - 80°C sample temperature for etching
• Optimal Emission Monitoring
• Etch pressure from 0.1 Pa to 5 Pa (0.75 mT - 37.5 mT)
• Cl₂, BCl₃, CF₄, CHF₃, SF₆, Ar, N₂, and O₂ in etch chamber
• 2000 W ICP ashing chamber
• RT - 250°C sample temperature for ashing
• Ashing pressures 50 mT - 500 mT
• O₂, N₂, CF₄, H₂O Vapor for ashing chamber
• Multiple 6” diameter wafer capable system
• Pieces possible by mounting to 6” wafer

Documentation

• Operating Instruction Manual
• Training Notes
• Gas Change Instructions
• Manual Wafer Transfer Instructions