Difference between revisions of "ICP Etch 2 (Panasonic E626I)"
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= About = |
= About = |
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| − | This is a single-chamber tool for etching of a variety of materials. The chamber is configured as an ICP etching tool with 1000 W ICP power, 500 W RF substrate power, and RT - 80°C operation with back-side He cooling and an electrostatic chuck to maintain controlled surface temperatures during etching. This chamber has Cl<sub>2</sub>, BCl<sub>3</sub>, CF<sub>4</sub>, CHF<sub>3</sub>, SF<sub>6</sub>, Ar, N<sub>2</sub>, and O<sub>2 </sub>for gas sources and can be used to etch a variety of materials from SiO<sub>2</sub> to metals to compound semiconductors. The chamber is evacuated with a 2000 lpm Osaka Vacuum magnetically levitated turbo pump, allowing for fast pump down. |
+ | This is a single-chamber tool for etching of a variety of materials. The chamber is configured as an ICP etching tool with 1000 W ICP power, 500 W RF substrate power, and RT - 80°C operation with back-side He cooling and an electrostatic chuck to maintain controlled surface temperatures during etching. This chamber has Cl<sub>2</sub>, BCl<sub>3</sub>, CF<sub>4</sub>, CHF<sub>3</sub>, SF<sub>6</sub>, Ar, N<sub>2</sub>, and O<sub>2 </sub>for gas sources and can be used to etch a variety of materials from SiO<sub>2</sub> to metals to compound semiconductors. The chamber is evacuated with a 2000 lpm Osaka Vacuum magnetically levitated turbo pump, allowing for fast pump down. |
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| + | The system is also equipped with a red laser monitoring system from Intellemetrics for more precise etch stop control. |
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= Detailed Specifications = |
= Detailed Specifications = |
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*Single 6” diameter wafer capable system |
*Single 6” diameter wafer capable system |
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*Pieces possible by mounting to 6” wafer |
*Pieces possible by mounting to 6” wafer |
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| − | *670nm laser endpoint detector with camera and simulation software |
+ | *670nm laser endpoint detector with camera and simulation software: [[Laser Etch Monitoring|Intellemetrics LEP 500]] |
=Documentation= |
=Documentation= |
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*{{file|Gas-Change.pdf|Gas Change Instructions}} |
*{{file|Gas-Change.pdf|Gas Change Instructions}} |
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*{{file|manualwafertransfer.pdf|Manual Wafer Transfer Instructions}} |
*{{file|manualwafertransfer.pdf|Manual Wafer Transfer Instructions}} |
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| + | *[[Laser Etch Monitoring|Laser Etch Monitor procedures]] |
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= Recipes = |
= Recipes = |
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Revision as of 11:17, 8 June 2020
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About
This is a single-chamber tool for etching of a variety of materials. The chamber is configured as an ICP etching tool with 1000 W ICP power, 500 W RF substrate power, and RT - 80°C operation with back-side He cooling and an electrostatic chuck to maintain controlled surface temperatures during etching. This chamber has Cl2, BCl3, CF4, CHF3, SF6, Ar, N2, and O2 for gas sources and can be used to etch a variety of materials from SiO2 to metals to compound semiconductors. The chamber is evacuated with a 2000 lpm Osaka Vacuum magnetically levitated turbo pump, allowing for fast pump down.
The system is also equipped with a red laser monitoring system from Intellemetrics for more precise etch stop control.
Detailed Specifications
- 1000 W ICP source, 500 W RF Sample Bias Source in etching chamber
- Room Temp. – 80°C sample temperature for etching. Default 15°C Chuck temperature.
- Optimal Emission Monitoring
- Etch pressure from 0.1 Pa to 5 Pa (0.75 mT - 37.5 mT)
- Cl2, BCl3, (Ar or CHF3), (CF4 or SF6), N2, and O2 in etch chamber
- O2, N2, CF4, H2O Vapor for ashing chamber
- Single 6” diameter wafer capable system
- Pieces possible by mounting to 6” wafer
- 670nm laser endpoint detector with camera and simulation software: Intellemetrics LEP 500
Documentation
- Operating Instruction Manual
- Training Notes
- Gas Change Instructions
- Manual Wafer Transfer Instructions
- Laser Etch Monitor procedures
Recipes
- Dry Etching Recipes
- Table of all dry etching recipes, showing which tools can etch which materials etc.
- ICP2 Recipes
- Starting point recipes for ICP2 specifically.