Difference between revisions of "ICP Etch 2 (Panasonic E640)"

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|picture=ICP1.jpg
 
|picture=ICP1.jpg
 
|type = Dry Etch
 
|type = Dry Etch
|super= Mike Silva
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|super= Tony Bosch
 
|phone=(805)839-3918x219
 
|phone=(805)839-3918x219
 
|location=Bay 2
 
|location=Bay 2
 
|email=silva@ece.ucsb.edu
 
|email=silva@ece.ucsb.edu
|description = ?
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|description = ICP Etch
 
|manufacturer = Panasonic Factory Solutions  
 
|manufacturer = Panasonic Factory Solutions  
 
|materials =  
 
|materials =  
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= About  =
 
= About  =
  
This is a three-chamber tool for etching of a variety of materials. Chamber one is configured as an ICP etching tool with 1000 W ICP power, 500 W RF substrate power, and RT - 80°C operation with back-side He cooling and an electrostatic chuck to maintain controlled surface temperatures during etching. This chamber has Cl<sub>2</sub>, BCl<sub>3</sub>, CF<sub>4</sub>, CHF<sub>3</sub>, SF<sub>6</sub>, Ar, N<sub>2</sub>, and O<sub>2 </sub>for gas sources and can be used to etch a variety of materials from SiO<sub>2</sub> to metals to compound semiconductors. The chamber evacuated with a 2000 lpm Osaka Vacuum magnetically levitated turbo pump, allowing for fast pump down. Chamber two is a 2000 W ICP chamber configures for plasma etching of photoresist and other materials such as BCB. The substrate is not biased and the chamber has CF<sub>4</sub> and O<sub>2</sub> for the gases. Chamber three is a DI rinsing chamber for rinsing off any etch byproducts before removing the sample from the system. The system accepts 6” wafers or pieces mounted to the wafers. In Automatic mode, multiple wafers can be run through automatically with the cassette-based system.of low-stress Nitride films.  
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This is a single-chamber tool for etching of a variety of materials. The chamber is configured as an ICP etching tool with 1000 W ICP power, 500 W RF substrate power, and RT - 80°C operation with back-side He cooling and an electrostatic chuck to maintain controlled surface temperatures during etching. This chamber has Cl<sub>2</sub>, BCl<sub>3</sub>, CF<sub>4</sub>, CHF<sub>3</sub>, SF<sub>6</sub>, Ar, N<sub>2</sub>, and O<sub>2 </sub>for gas sources and can be used to etch a variety of materials from SiO<sub>2</sub> to metals to compound semiconductors. The chamber is evacuated with a 2000 lpm Osaka Vacuum magnetically levitated turbo pump, allowing for fast pump down.
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The system is also equipped with a red laser monitoring system from Intellemetrics for more precise etch stop control.
  
 
= Detailed Specifications  =
 
= Detailed Specifications  =
  
 
*1000 W ICP source, 500 W RF Sample Bias Source in etching chamber  
 
*1000 W ICP source, 500 W RF Sample Bias Source in etching chamber  
*RT - 80°C sample temperature for etching  
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*Room Temp. – 80°C sample temperature for etching. Default 15°C Chuck temperature.
 
*Optimal Emission Monitoring  
 
*Optimal Emission Monitoring  
 
*Etch pressure from 0.1 Pa to 5 Pa (0.75 mT - 37.5 mT)  
 
*Etch pressure from 0.1 Pa to 5 Pa (0.75 mT - 37.5 mT)  
*Cl<sub>2</sub>, BCl<sub>3</sub>, CF<sub>4</sub>, CHF<sub>3</sub>, SF<sub>6</sub>, Ar, N<sub>2</sub>, and O<sub>2</sub> in etch chamber  
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*Cl<sub>2</sub>, BCl<sub>3</sub>, (Ar or CHF<sub>3</sub>), (CF<sub>4</sub> or SF<sub>6</sub>), N<sub>2</sub>, and O<sub>2</sub> in etch chamber
*2000 W ICP ashing chamber
 
*RT - 250°C sample temperature for ashing
 
*Ashing pressures 50 mT - 500 mT
 
 
*O<sub>2</sub>, N<sub>2</sub>, CF<sub>4</sub>, H<sub>2</sub>O Vapor for ashing chamber  
 
*O<sub>2</sub>, N<sub>2</sub>, CF<sub>4</sub>, H<sub>2</sub>O Vapor for ashing chamber  
*Multiple 6” diameter wafer capable system  
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*Single 6” diameter wafer capable system  
 
*Pieces possible by mounting to 6” wafer
 
*Pieces possible by mounting to 6” wafer
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*670nm laser endpoint detector with camera and simulation software: [[Laser Etch Monitoring|Intellemetrics LEP 500]]
  
[[Link title]]=Documentation=
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=Documentation=
 
*{{file|ICP-Etch-2-Operating-Manual.pdf|Operating Instruction Manual}}
 
*{{file|ICP-Etch-2-Operating-Manual.pdf|Operating Instruction Manual}}
 
*{{file|Panasonic2.pdf|Training Notes}}
 
*{{file|Panasonic2.pdf|Training Notes}}
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*{{file|Gas-Change.pdf|Gas Change Instructions}}
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*{{file|manualwafertransfer.pdf|Manual Wafer Transfer Instructions}}
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*[[Laser Etch Monitoring|Laser Etch Monitor procedures]]
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*Online Training Video:
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**[https://gauchocast.hosted.panopto.com/Panopto/Pages/Viewer.aspx?id=8b676980-1c9a-420c-a2e5-ac180139939d <u>Panasonic ICP#2 Training</u>]
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**'''Important:''' ''This video is for reference only, and does not give you authorization to use the tool. You must be officially authorized by the supervisor before using this machine.''
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= Recipes =
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* [https://wiki.nanotech.ucsb.edu/w/index.php?title=ICP_Etching_Recipes#ICP_Etch_2_.28Panasonic_E640.29 ICP2 Recipes & Historical Data]
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** Starting point recipes for ICP2 specifically.
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** ''Historical Data'' records "calibration" etches to test tool performance.
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* [https://wiki.nanotech.ucsb.edu/w/index.php?title=Dry_Etching_Recipes Dry Etching Recipes]
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** Table of all dry etching recipes, showing which tools can etch which materials etc.

Latest revision as of 11:52, 4 September 2021

ICP Etch 2 (Panasonic E640)
ICP1.jpg
Tool Type Dry Etch
Location Bay 2
Supervisor Tony Bosch
Supervisor Phone (805) 893-3486
Supervisor E-Mail bosch@ece.ucsb.edu
Description ICP Etch
Manufacturer Panasonic Factory Solutions
Dry Etch Recipes
Sign up for this tool


About

This is a single-chamber tool for etching of a variety of materials. The chamber is configured as an ICP etching tool with 1000 W ICP power, 500 W RF substrate power, and RT - 80°C operation with back-side He cooling and an electrostatic chuck to maintain controlled surface temperatures during etching. This chamber has Cl2, BCl3, CF4, CHF3, SF6, Ar, N2, and O2 for gas sources and can be used to etch a variety of materials from SiO2 to metals to compound semiconductors. The chamber is evacuated with a 2000 lpm Osaka Vacuum magnetically levitated turbo pump, allowing for fast pump down.

The system is also equipped with a red laser monitoring system from Intellemetrics for more precise etch stop control.

Detailed Specifications

  • 1000 W ICP source, 500 W RF Sample Bias Source in etching chamber
  • Room Temp. – 80°C sample temperature for etching. Default 15°C Chuck temperature.
  • Optimal Emission Monitoring
  • Etch pressure from 0.1 Pa to 5 Pa (0.75 mT - 37.5 mT)
  • Cl2, BCl3, (Ar or CHF3), (CF4 or SF6), N2, and O2 in etch chamber
  • O2, N2, CF4, H2O Vapor for ashing chamber
  • Single 6” diameter wafer capable system
  • Pieces possible by mounting to 6” wafer
  • 670nm laser endpoint detector with camera and simulation software: Intellemetrics LEP 500

Documentation

Recipes

  • Dry Etching Recipes
    • Table of all dry etching recipes, showing which tools can etch which materials etc.