Difference between revisions of "ICP Etch 1 (Panasonic E626I)"

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(→‎Recipes: mention historical data)
(Updated tool About section)
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== About ==
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==About==
  
 
This is a three-chamber tool for etching of a variety of materials.  
 
This is a three-chamber tool for etching of a variety of materials.  
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Chamber one "Etch Chamber" is configured as an ICP etching tool with 1000 W ICP power, 500 W RF substrate power, and RT - 80°C operation with back-side He cooling and an electrostatic chuck to maintain controlled surface temperatures during etching.  
 
Chamber one "Etch Chamber" is configured as an ICP etching tool with 1000 W ICP power, 500 W RF substrate power, and RT - 80°C operation with back-side He cooling and an electrostatic chuck to maintain controlled surface temperatures during etching.  
  
This chamber has the following gas sources: Cl<sub>2</sub>, BCl<sub>3</sub>, N<sub>2</sub>, and O<sub>2</sub> (CHF<sub>3</sub> or Ar), (CF<sub>4</sub> or SF<sub>6</sub>), where two of the lines must be manually switched between the two options shown (gasses can't be used simultaneously).
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This chamber has the following dedicated gas sources: Cl<sub>2</sub>, BCl<sub>3</sub>, and O<sub>2</sub>
 +
 
 +
The chamber also has the following gas sources, where two of the lines must be manually switched between the two options shown (gasses can't be used simultaneously): N<sub>2</sub>/He, CHF<sub>3</sub>/Ar and CF<sub>4</sub> /SF<sub>6</sub>  
  
 
The system can be used to etch a variety of materials from SiO<sub>2</sub> to metals to compound semiconductors. The chamber is evacuated with a 2000 lpm Osaka Vacuum magnetically levitated turbo pump, and is load-locked for fast pump down.  
 
The system can be used to etch a variety of materials from SiO<sub>2</sub> to metals to compound semiconductors. The chamber is evacuated with a 2000 lpm Osaka Vacuum magnetically levitated turbo pump, and is load-locked for fast pump down.  
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Chamber two, "Ashing Chamber" is a 2000 W ICP chamber configures for plasma "ashing" of photoresist and other materials such as BCB. The substrate is not biased for isotropic etching, and the chamber has CF<sub>4</sub> and O<sub>2</sub> for the gases. This is especially well-suited for omni-directional etching of photoresist/PR removal, or BCB etch-back.  
 
Chamber two, "Ashing Chamber" is a 2000 W ICP chamber configures for plasma "ashing" of photoresist and other materials such as BCB. The substrate is not biased for isotropic etching, and the chamber has CF<sub>4</sub> and O<sub>2</sub> for the gases. This is especially well-suited for omni-directional etching of photoresist/PR removal, or BCB etch-back.  
  
Chamber three "Rinse Chamber" is a DI rinsing chamber for rinsing off any etch byproducts before removing the sample from the system.  
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Chamber three "Rinse Chamber" is a DI rinsing chamber that is not used/offline.
 +
 
 +
The system accepts 6” wafers with SEMI-std. flats. Users often mount smaller pieces to the wafers, usually with easily removable oil to improve uniform heatsinking.  
  
The system accepts 6” wafers with SEMI-std. flats. Users often mount smaller pieces to the wafers, usually with easily removable oil to improve uniform heatsinking. In Automatic mode, multiple wafers can be run through automatically with the cassette-based system.
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In Automatic mode, multiple wafers can be run through automatically with the cassette-based system.
  
== Detailed Specifications ==
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==Detailed Specifications==
  
*1000 W ICP source, 500 W RF Sample Bias Source in etching chamber  
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*1000 W ICP source, 500 W RF Sample Bias Source in etching chamber
*Multiple 6” diameter wafer capable system  
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*Multiple 6” diameter wafer capable system
 
*Pieces possible by mounting to 6” wafer
 
*Pieces possible by mounting to 6” wafer
 +
 
<u>Etch Chamber:</u>
 
<u>Etch Chamber:</u>
*Optimal Emission Monitoring  
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*Etch pressure from 0.1 Pa to 5 Pa (0.75 mT - 37.5 mT)  
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*Optimal Emission Monitoring
*Cl<sub>2</sub>, BCl<sub>3</sub>, N<sub>2</sub>, O<sub>2,</sub> (CHF<sub>3</sub> or Ar), (CF<sub>4</sub> or SF<sub>6</sub>) in etch chamber  
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*Etch pressure from 0.1 Pa to 5 Pa (0.75 mT - 37.5 mT)
*Room Temp - 80°C sample temperature for etching. Default 12°C Chuck Temperature.  
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*Cl<sub>2</sub>, BCl<sub>3</sub>, N<sub>2</sub>, O<sub>2,</sub> (CHF<sub>3</sub> or Ar), (CF<sub>4</sub> or SF<sub>6</sub>) in etch chamber
*Laser Etch Monitoring: [[Laser Etch Monitoring|Intellemetrics LEP 500]]  
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*Room Temp - 80°C sample temperature for etching. Default 12°C Chuck Temperature.
 +
*Laser Etch Monitoring: [[Laser Etch Monitoring|Intellemetrics LEP 500]]
 +
 
 
<u>Ashing Chamber:</u>
 
<u>Ashing Chamber:</u>
*2000 W ICP ashing chamber  
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*RT - 250°C sample temperature for ashing  
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*2000 W ICP ashing chamber
*Ashing pressures 50 mT - 500 mT  
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*RT - 250°C sample temperature for ashing
*O<sub>2</sub>, N<sub>2</sub>, CF<sub>4</sub>, H<sub>2</sub>O Vapor for ashing chamber  
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*Ashing pressures 50 mT - 500 mT
*Room Temp. to 270°C etching.  Default 50°C.  
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*O<sub>2</sub>, N<sub>2</sub>, CF<sub>4</sub>, H<sub>2</sub>O Vapor for ashing chamber
 +
*Room Temp. to 270°C etching.  Default 50°C.
  
 
==Documentation==
 
==Documentation==
 +
 
*{{fl|ICP1-Gas-Change-CHF3-AR.pdf|Gas Change Procedure (CHF3 & AR)}}
 
*{{fl|ICP1-Gas-Change-CHF3-AR.pdf|Gas Change Procedure (CHF3 & AR)}}
 
*{{fl|Gas Change CF4-SF6-CF4.pdf|Gas Change Procedure (CF4 & SF6)}}
 
*{{fl|Gas Change CF4-SF6-CF4.pdf|Gas Change Procedure (CF4 & SF6)}}
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*[[Laser Etch Monitoring|Laser Etch Monitor procedures]]
 
*[[Laser Etch Monitoring|Laser Etch Monitor procedures]]
  
== Recipes ==
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==Recipes==
* [[ICP Etching Recipes#ICP Etch 1 .28Panasonic E626I.29|'''Recipes > Dry Etching > ICP Etch 1''']] page lists all qualified and contributed recipes for this tool.
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** Starting point recipes for ICP#1
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*[[ICP Etching Recipes#ICP Etch 1 .28Panasonic E626I.29|'''Recipes > Dry Etching > ICP Etch 1''']] page lists all qualified and contributed recipes for this tool.
** ''Historical Data'' records "calibration" etches to test tool performance.
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**Starting point recipes for ICP#1
* The [[Dry Etching Recipes|'''Recipes > Dry Etching Recipes''']]  
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**''Historical Data'' records "calibration" etches to test tool performance.
** Master table lists all contributed dry etches and materials across tools.
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*The [[Dry Etching Recipes|'''Recipes > Dry Etching Recipes''']]  
 +
**Master table lists all contributed dry etches and materials across tools.

Revision as of 11:19, 10 September 2021

ICP Etch 1 (Panasonic E626I)
ICP2.jpg
Tool Type Dry Etch
Location Bay 2
Supervisor Lee Sawyer
Supervisor Phone (805) 893-2123
Supervisor E-Mail lee_sawyer@ucsb.edu
Description ?
Manufacturer Panasonic Factory Solutions, Japan
Dry Etch Recipes
Sign up for this tool


About

This is a three-chamber tool for etching of a variety of materials.

Chamber one "Etch Chamber" is configured as an ICP etching tool with 1000 W ICP power, 500 W RF substrate power, and RT - 80°C operation with back-side He cooling and an electrostatic chuck to maintain controlled surface temperatures during etching.

This chamber has the following dedicated gas sources: Cl2, BCl3, and O2

The chamber also has the following gas sources, where two of the lines must be manually switched between the two options shown (gasses can't be used simultaneously): N2/He, CHF3/Ar and CF4 /SF6

The system can be used to etch a variety of materials from SiO2 to metals to compound semiconductors. The chamber is evacuated with a 2000 lpm Osaka Vacuum magnetically levitated turbo pump, and is load-locked for fast pump down.

The in-situ laser monitor installed on the etch chamber allows for repeatable etches and endpoint detection via continuous optical monitoring of the wafer reflectivity in a user-determined location, through a porthole on the chamber.

Chamber two, "Ashing Chamber" is a 2000 W ICP chamber configures for plasma "ashing" of photoresist and other materials such as BCB. The substrate is not biased for isotropic etching, and the chamber has CF4 and O2 for the gases. This is especially well-suited for omni-directional etching of photoresist/PR removal, or BCB etch-back.

Chamber three "Rinse Chamber" is a DI rinsing chamber that is not used/offline.

The system accepts 6” wafers with SEMI-std. flats. Users often mount smaller pieces to the wafers, usually with easily removable oil to improve uniform heatsinking.

In Automatic mode, multiple wafers can be run through automatically with the cassette-based system.

Detailed Specifications

  • 1000 W ICP source, 500 W RF Sample Bias Source in etching chamber
  • Multiple 6” diameter wafer capable system
  • Pieces possible by mounting to 6” wafer

Etch Chamber:

  • Optimal Emission Monitoring
  • Etch pressure from 0.1 Pa to 5 Pa (0.75 mT - 37.5 mT)
  • Cl2, BCl3, N2, O2, (CHF3 or Ar), (CF4 or SF6) in etch chamber
  • Room Temp - 80°C sample temperature for etching. Default 12°C Chuck Temperature.
  • Laser Etch Monitoring: Intellemetrics LEP 500

Ashing Chamber:

  • 2000 W ICP ashing chamber
  • RT - 250°C sample temperature for ashing
  • Ashing pressures 50 mT - 500 mT
  • O2, N2, CF4, H2O Vapor for ashing chamber
  • Room Temp. to 270°C etching. Default 50°C.

Documentation

Recipes