Difference between revisions of "ICP-PECVD (Unaxis VLR)"
|Line 23:||Line 23:|
Revision as of 15:44, 25 March 2014
This system is configured as an ICP PECVD deposition tool with 1000 W ICP power, 600 W RF substrate power, and 50°C-350°C operation. This chamber has 100% SiH4, N2, O2, and Ar for gas sources. The high density PECVD produces a more dense, higher quality SiO2 and Si3N4, as compared with conventional PECVD. With the high density plasma, deposition of high quality films can be deposited as low as 50°C for processes requiring lower temperatures. Stress compensation for silicon nitride is characterized.
- 1000W ICP source, 600W RF Sample Bias Power Supply
- 50 - 350°C sample temperature
- 100% SiH4, Ar, N2, O2
- Multiple 4” diameter wafer capable system
- Pieces possible by mounting or placing on 4 ” wafer