Difference between revisions of "ICP-PECVD (Unaxis VLR)"

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(→‎Documentation: redlink the SOP, explain the purpose of the "procedure")
 
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=About=
 
=About=
This system is configured as an ICP PECVD deposition tool with 1000 W ICP power, 600 W RF substrate power, and 50°C-350°C operation. This chamber has 100% SiH<sub>4,</sub> N<sub>2</sub>, O<sub>2</sub>, and Ar for gas sources. The high density PECVD produces a more dense, higher quality SiO<sub>2</sub> and Si<sub>3</sub>N<sub>4</sub>, as compared with conventional PECVD. With the high density plasma, deposition of high quality films can be deposited as low as 50°C for processes requiring lower temperatures. Stress compensation for silicon nitride is characterized.
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This system is configured as an ICP PECVD deposition tool with 1000 W ICP power, 600 W RF substrate power, and 100°C-350°C operation. This chamber has 100% SiD<sub>4,</sub> N<sub>2</sub>, O<sub>2</sub>, and Ar for gas sources. The high density PECVD produces a more dense, higher quality SiO<sub>2</sub> and Si<sub>3</sub>N<sub>4</sub>, as compared with conventional PECVD. With the high density plasma, deposition of high quality films can be deposited as low as 100°C for processes requiring lower temperatures. Stress compensation for silicon nitride is characterized.
  
 
===Cluster Configuration===
 
===Cluster Configuration===
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*1000W ICP source, 600W RF Sample Bias Power Supply
 
*1000W ICP source, 600W RF Sample Bias Power Supply
*50 - 350°C sample temperature
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*100 - 350°C sample temperature
*100% SiH<sub>4</sub>, Ar, N<sub>2</sub>, O<sub>2</sub>
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*100% SiD<sub>4</sub>, Ar, N<sub>2</sub>, O<sub>2</sub>
 
*Multiple 4” diameter wafer capable system
 
*Multiple 4” diameter wafer capable system
 
*Pieces possible by mounting or placing on 4 ” wafer
 
*Pieces possible by mounting or placing on 4 ” wafer
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=Documentation=
 
=Documentation=
  
*Operating Instructions
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*[[Unaxis VLR ICP-PECVD - Std. Operating Procedure|Operating Instructions]]
*Wafer Coating Process Traveler1
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*[[Unaxis wafer coating procedure]] - ''process flow for achieving high-quality coatings.''
 
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**For particle counting procedure, see the [https://wiki.nanotech.ucsb.edu/wiki/Wafer_scanning_process_traveler Surfscan Scanning Procedure]
*[https://wiki.nanotech.ucsb.edu/w/images/a/ab/Unaxis_SOP_3-27-2020.pdf Wafer Coating Process Traveler]
 
  
 
== Recipes ==
 
== Recipes ==
 
You can find recipes for this tool on the Wiki > Recipes > [https://wiki.nanotech.ucsb.edu/wiki/PECVD_Recipes#ICP-PECVD_.28Unaxis_VLR.29 PECVD Recipes page]
 
You can find recipes for this tool on the Wiki > Recipes > [https://wiki.nanotech.ucsb.edu/wiki/PECVD_Recipes#ICP-PECVD_.28Unaxis_VLR.29 PECVD Recipes page]

Latest revision as of 00:08, 16 July 2020

ICP-PECVD (Unaxis VLR)
UnaxisPECVD.jpg
Tool Type Vacuum Deposition
Location Bay 1
Supervisor Tony Bosch
Supervisor Phone (805) 893-3486
Supervisor E-Mail bosch@ece.ucsb.edu
Description High Density ICP PECVD
Manufacturer Unaxis
Vacuum Deposition Recipes
Sign up for this tool


About

This system is configured as an ICP PECVD deposition tool with 1000 W ICP power, 600 W RF substrate power, and 100°C-350°C operation. This chamber has 100% SiD4, N2, O2, and Ar for gas sources. The high density PECVD produces a more dense, higher quality SiO2 and Si3N4, as compared with conventional PECVD. With the high density plasma, deposition of high quality films can be deposited as low as 100°C for processes requiring lower temperatures. Stress compensation for silicon nitride is characterized.

Cluster Configuration

A Deposition and Etch chamber are both attached to the same loadlock, allowing etching and deposition without breaking vacuum. Each chamber can be scheduled separately on SignupMonkey.

Detailed Specifications

  • 1000W ICP source, 600W RF Sample Bias Power Supply
  • 100 - 350°C sample temperature
  • 100% SiD4, Ar, N2, O2
  • Multiple 4” diameter wafer capable system
  • Pieces possible by mounting or placing on 4 ” wafer

Documentation

Recipes

You can find recipes for this tool on the Wiki > Recipes > PECVD Recipes page