Difference between revisions of "ICP-PECVD (Unaxis VLR)"
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=About= |
=About= |
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| − | This system is configured as an ICP PECVD deposition tool with 1000 W ICP power, 600 W RF substrate power, and |
+ | This system is configured as an ICP PECVD deposition tool with 1000 W ICP power, 600 W RF substrate power, and 100°C-350°C operation. This chamber has 100% SiD<sub>4,</sub> N<sub>2</sub>, O<sub>2</sub>, and Ar for gas sources. The high density PECVD produces a more dense, higher quality SiO<sub>2</sub> and Si<sub>3</sub>N<sub>4</sub>, as compared with conventional PECVD. With the high density plasma, deposition of high quality films can be deposited as low as 100°C for processes requiring lower temperatures. Stress compensation for silicon nitride is characterized. |
===Cluster Configuration=== |
===Cluster Configuration=== |
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A Deposition and Etch chamber are both attached to the same loadlock, allowing etching and deposition without breaking vacuum. Each chamber can be scheduled separately on SignupMonkey. |
A Deposition and Etch chamber are both attached to the same loadlock, allowing etching and deposition without breaking vacuum. Each chamber can be scheduled separately on SignupMonkey. |
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| − | *PM3: ICP-PECVD Deposition (this page) |
+ | *'''PM3''': ICP-PECVD Deposition (this page) |
| − | *PM1: [[ICP-Etch (Unaxis VLR)|ICP Etch (Unaxis VLR)]] |
+ | *'''PM1''': [[ICP-Etch (Unaxis VLR)|ICP Etch (Unaxis VLR)]] |
=Detailed Specifications= |
=Detailed Specifications= |
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*1000W ICP source, 600W RF Sample Bias Power Supply |
*1000W ICP source, 600W RF Sample Bias Power Supply |
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| − | * |
+ | *100 - 350°C sample temperature |
| − | *100% |
+ | *100% SiD<sub>4</sub>, Ar, N<sub>2</sub>, O<sub>2</sub> |
*Multiple 4” diameter wafer capable system |
*Multiple 4” diameter wafer capable system |
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*Pieces possible by mounting or placing on 4 ” wafer |
*Pieces possible by mounting or placing on 4 ” wafer |
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=Documentation= |
=Documentation= |
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| − | *[ |
+ | *[[Unaxis VLR ICP-PECVD - Std. Operating Procedure|Operating Instructions]] |
| + | *[[Unaxis wafer coating procedure]] - ''process flow for achieving high-quality coatings.'' |
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| + | **For particle counting procedure, see the [https://wiki.nanotech.ucsb.edu/wiki/Wafer_scanning_process_traveler Surfscan Scanning Procedure] |
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| + | == Recipes == |
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| + | You can find recipes for this tool on the Wiki > Recipes > [https://wiki.nanotech.ucsb.edu/wiki/PECVD_Recipes#ICP-PECVD_.28Unaxis_VLR.29 PECVD Recipes page] |
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Revision as of 00:08, 16 July 2020
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About
This system is configured as an ICP PECVD deposition tool with 1000 W ICP power, 600 W RF substrate power, and 100°C-350°C operation. This chamber has 100% SiD4, N2, O2, and Ar for gas sources. The high density PECVD produces a more dense, higher quality SiO2 and Si3N4, as compared with conventional PECVD. With the high density plasma, deposition of high quality films can be deposited as low as 100°C for processes requiring lower temperatures. Stress compensation for silicon nitride is characterized.
Cluster Configuration
A Deposition and Etch chamber are both attached to the same loadlock, allowing etching and deposition without breaking vacuum. Each chamber can be scheduled separately on SignupMonkey.
- PM3: ICP-PECVD Deposition (this page)
- PM1: ICP Etch (Unaxis VLR)
Detailed Specifications
- 1000W ICP source, 600W RF Sample Bias Power Supply
- 100 - 350°C sample temperature
- 100% SiD4, Ar, N2, O2
- Multiple 4” diameter wafer capable system
- Pieces possible by mounting or placing on 4 ” wafer
Documentation
- Operating Instructions
- Unaxis wafer coating procedure - process flow for achieving high-quality coatings.
- For particle counting procedure, see the Surfscan Scanning Procedure
Recipes
You can find recipes for this tool on the Wiki > Recipes > PECVD Recipes page