Difference between revisions of "ICP-PECVD (Unaxis VLR)"

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A Deposition and Etch chamber are both attached to the same loadlock, allowing etching and deposition without breaking vacuum. Each chamber can be scheduled separately on SignupMonkey.
 
A Deposition and Etch chamber are both attached to the same loadlock, allowing etching and deposition without breaking vacuum. Each chamber can be scheduled separately on SignupMonkey.
  
*PM3: ICP-PECVD Deposition (this page)
+
*'''PM3''': ICP-PECVD Deposition (this page)
*PM1: [[ICP-Etch (Unaxis VLR)|ICP Etch (Unaxis VLR)]]
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*'''PM1''': [[ICP-Etch (Unaxis VLR)|ICP Etch (Unaxis VLR)]]
  
 
=Detailed Specifications=
 
=Detailed Specifications=

Revision as of 15:26, 27 November 2019

ICP-PECVD (Unaxis VLR)
UnaxisPECVD.jpg
Tool Type Vacuum Deposition
Location Bay 1
Supervisor Tony Bosch
Supervisor Phone (805) 893-3486
Supervisor E-Mail bosch@ece.ucsb.edu
Description High Density ICP PECVD
Manufacturer Unaxis
Vacuum Deposition Recipes
Sign up for this tool


About

This system is configured as an ICP PECVD deposition tool with 1000 W ICP power, 600 W RF substrate power, and 50°C-350°C operation. This chamber has 100% SiH4, N2, O2, and Ar for gas sources. The high density PECVD produces a more dense, higher quality SiO2 and Si3N4, as compared with conventional PECVD. With the high density plasma, deposition of high quality films can be deposited as low as 50°C for processes requiring lower temperatures. Stress compensation for silicon nitride is characterized.

Cluster Configuration

A Deposition and Etch chamber are both attached to the same loadlock, allowing etching and deposition without breaking vacuum. Each chamber can be scheduled separately on SignupMonkey.

Detailed Specifications

  • 1000W ICP source, 600W RF Sample Bias Power Supply
  • 50 - 350°C sample temperature
  • 100% SiH4, Ar, N2, O2
  • Multiple 4” diameter wafer capable system
  • Pieces possible by mounting or placing on 4 ” wafer

Documentation