Difference between revisions of "ICP-Etch (Unaxis VLR)"

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= About =
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=About=
  
This system is configured as an ICP etching tool with 1000 W ICP power, 500 W RF substrate power, and RT - 200°C operation with back-side He cooling and a clamp to maintain controlled surface temperatures during etching. This chamber has Cl<sub>2</sub>, BCl<sub>3</sub>, Ar, N<sub>2</sub>, and O<sub>2</sub> for gas sources and can be used to etch a variety of materials from compound semiconductors to metals. The high temperature etching is specifically useful for etching of high Indium containing compound semiconductors such as InP, where etch product volatility is an issue. High aspect ratio, smooth vertical wall, InP and related compound semiconductor (InGaAs, InAlAs, InGaAsP, etc.) etching is done in this system. The chamber is configured for 4" wafers. Pieces are handled by using a silicone-based thermal heat sink compound. Both sapphire and silicon carrier wafers are available. Laser end-point monitoring is also included in the system.  
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This system is configured as an ICP etching tool with 1000 W ICP power, 600 W RF substrate power, and 30C - 200°C operation with back-side He to maintain controlled surface temperatures during etching. This chamber has Cl<sub>2</sub>, BCl<sub>3</sub>, Ar, N<sub>2</sub>, and O<sub>2</sub> for gas sources and can be used to etch a variety of materials from compound semiconductors to metals. The high temperature etching is specifically useful for etching of high Indium containing compound semiconductors such as InP, where etch product volatility is an issue. High aspect ratio, smooth vertical wall, InP and related compound semiconductor (InGaAs, InAlAs, InGaAsP, etc.) etching is done in this system. The chamber is configured for 4" wafers. Pieces are handled by using a silicone-based thermal heat sink compound. Both sapphire and silicon carrier wafers are available. Laser end-point monitoring is also included in the system.
  
= Detailed Specifications =
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=== Cluster Configuration ===
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A Deposition and Etch chamber are both attached to the same loadlock, allowing etching and deposition without breaking vacuum. Each chamber can be scheduled separately on SignupMonkey.
  
*1000 W ICP source, 500 W RF Sample Bias Source in etching chamber
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* '''PM3''': [[ICP-PECVD (Unaxis VLR)|ICP-PECVD Deposition]]
*RT - 200°C sample temperature for etching  
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* '''PM1''': ICP Etch (this page)
*Laser monitoring available  
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*Cl<sub>2</sub>, BCl<sub>3</sub>, Ar, N<sub>2</sub>, and O<sub>2</sub> in etch chamber  
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=Detailed Specifications=
*Multiple 4” diameter wafer capable system  
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*1000 W ICP source, 600 W RF Bias Source
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*30 - 200°C sample temperature for etching
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*Laser monitoring available
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*Cl<sub>2</sub>, BCl<sub>3</sub>, Ar, N<sub>2</sub>, H<sub>2</sub>, SF<sub>6</sub>,and O<sub>2</sub> in etch chamber
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*Multiple 4” diameter wafer capable system
 
*Pieces possible by mounting to 4 ” wafer with thermal compound
 
*Pieces possible by mounting to 4 ” wafer with thermal compound
  
 
=Documentation=
 
=Documentation=
*[[media:http://signupmonkey.ece.ucsb.edu/wiki/index.php/File:PM1_Wiki_Operational_Procedure_3-14-14.docx|Operating Instructions]]
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*[//wiki.nanotech.ucsb.edu/wiki/images/8/80/PM1_Wiki_Operational_Procedure_3-14-14.pdf Operating Instructions]

Latest revision as of 17:31, 6 April 2020

ICP-Etch (Unaxis VLR)
UnaxisPECVD.jpg
Tool Type Dry Etch
Location Bay 1
Supervisor Tony Bosch
Supervisor Phone (805) 893-3486
Supervisor E-Mail bosch@ece.ucsb.edu
Description ?
Manufacturer Unaxis
Dry Etch Recipes
Sign up for this tool


About

This system is configured as an ICP etching tool with 1000 W ICP power, 600 W RF substrate power, and 30C - 200°C operation with back-side He to maintain controlled surface temperatures during etching. This chamber has Cl2, BCl3, Ar, N2, and O2 for gas sources and can be used to etch a variety of materials from compound semiconductors to metals. The high temperature etching is specifically useful for etching of high Indium containing compound semiconductors such as InP, where etch product volatility is an issue. High aspect ratio, smooth vertical wall, InP and related compound semiconductor (InGaAs, InAlAs, InGaAsP, etc.) etching is done in this system. The chamber is configured for 4" wafers. Pieces are handled by using a silicone-based thermal heat sink compound. Both sapphire and silicon carrier wafers are available. Laser end-point monitoring is also included in the system.

Cluster Configuration

A Deposition and Etch chamber are both attached to the same loadlock, allowing etching and deposition without breaking vacuum. Each chamber can be scheduled separately on SignupMonkey.

Detailed Specifications

  • 1000 W ICP source, 600 W RF Bias Source
  • 30 - 200°C sample temperature for etching
  • Laser monitoring available
  • Cl2, BCl3, Ar, N2, H2, SF6,and O2 in etch chamber
  • Multiple 4” diameter wafer capable system
  • Pieces possible by mounting to 4 ” wafer with thermal compound

Documentation