Difference between revisions of "ICP-Etch (Unaxis VLR)"

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=About=
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==About==
  
 
This system is configured as an ICP etching tool with 1000 W ICP power, 600 W RF substrate power, and 30C - 200°C operation with back-side He to maintain controlled surface temperatures during etching. This chamber has Cl<sub>2</sub>, BCl<sub>3</sub>, Ar, N<sub>2</sub>, and O<sub>2</sub> for gas sources and can be used to etch a variety of materials from compound semiconductors to metals. The high temperature etching is specifically useful for etching of high Indium containing compound semiconductors such as InP, where etch product volatility is an issue. High aspect ratio, smooth vertical wall, InP and related compound semiconductor (InGaAs, InAlAs, InGaAsP, etc.) etching is done in this system. The chamber is configured for 4" wafers. Pieces are handled by using a silicone-based thermal heat sink compound. Both sapphire and silicon carrier wafers are available. Laser end-point monitoring is also included in the system.
 
This system is configured as an ICP etching tool with 1000 W ICP power, 600 W RF substrate power, and 30C - 200°C operation with back-side He to maintain controlled surface temperatures during etching. This chamber has Cl<sub>2</sub>, BCl<sub>3</sub>, Ar, N<sub>2</sub>, and O<sub>2</sub> for gas sources and can be used to etch a variety of materials from compound semiconductors to metals. The high temperature etching is specifically useful for etching of high Indium containing compound semiconductors such as InP, where etch product volatility is an issue. High aspect ratio, smooth vertical wall, InP and related compound semiconductor (InGaAs, InAlAs, InGaAsP, etc.) etching is done in this system. The chamber is configured for 4" wafers. Pieces are handled by using a silicone-based thermal heat sink compound. Both sapphire and silicon carrier wafers are available. Laser end-point monitoring is also included in the system.
  
=== Cluster Configuration ===
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===Cluster Configuration===
 
A Deposition and Etch chamber are both attached to the same loadlock, allowing etching and deposition without breaking vacuum. Each chamber can be scheduled separately on SignupMonkey.
 
A Deposition and Etch chamber are both attached to the same loadlock, allowing etching and deposition without breaking vacuum. Each chamber can be scheduled separately on SignupMonkey.
  
* '''PM3''': [[ICP-PECVD (Unaxis VLR)|ICP-PECVD Deposition]]
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*'''PM3''': [[ICP-PECVD (Unaxis VLR)|ICP-PECVD Deposition]]
* '''PM1''': ICP Etch (this page)
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*'''PM1''': ICP Etch (this page)
  
=Detailed Specifications=
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==Detailed Specifications==
  
 
*1000 W ICP source, 600 W RF Bias Source
 
*1000 W ICP source, 600 W RF Bias Source
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*Pieces possible by mounting to 4 ” wafer with thermal compound
 
*Pieces possible by mounting to 4 ” wafer with thermal compound
  
=Documentation=
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==Documentation==
  
 
*[//wiki.nanotech.ucsb.edu/wiki/images/8/80/PM1_Wiki_Operational_Procedure_3-14-14.pdf Operating Instructions]
 
*[//wiki.nanotech.ucsb.edu/wiki/images/8/80/PM1_Wiki_Operational_Procedure_3-14-14.pdf Operating Instructions]
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== Recipes ==
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* [[ICP Etching Recipes#ICP-Etch%20.28Unaxis%20VLR.29|ICP Etching Recipes > '''ICP-Etch (Unaxis VLR)''']]
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** ''Includes Process Control Data for InP etching.''
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 +
<br />

Latest revision as of 15:31, 29 September 2022

ICP-Etch (Unaxis VLR)
UnaxisPECVD.jpg
Location Bay 1
Tool Type Dry Etch
Manufacturer Unaxis
Description ?

Primary Supervisor Tony Bosch
(805) 893-3486
bosch@ece.ucsb.edu

Secondary Supervisor

Don Freeborn


Recipes Dry Etch RecipesN/A

SignupMonkey: Sign up for this tool


About

This system is configured as an ICP etching tool with 1000 W ICP power, 600 W RF substrate power, and 30C - 200°C operation with back-side He to maintain controlled surface temperatures during etching. This chamber has Cl2, BCl3, Ar, N2, and O2 for gas sources and can be used to etch a variety of materials from compound semiconductors to metals. The high temperature etching is specifically useful for etching of high Indium containing compound semiconductors such as InP, where etch product volatility is an issue. High aspect ratio, smooth vertical wall, InP and related compound semiconductor (InGaAs, InAlAs, InGaAsP, etc.) etching is done in this system. The chamber is configured for 4" wafers. Pieces are handled by using a silicone-based thermal heat sink compound. Both sapphire and silicon carrier wafers are available. Laser end-point monitoring is also included in the system.

Cluster Configuration

A Deposition and Etch chamber are both attached to the same loadlock, allowing etching and deposition without breaking vacuum. Each chamber can be scheduled separately on SignupMonkey.

Detailed Specifications

  • 1000 W ICP source, 600 W RF Bias Source
  • 30 - 200°C sample temperature for etching
  • Laser monitoring available
  • Cl2, BCl3, Ar, N2, H2, SF6,and O2 in etch chamber
  • Multiple 4” diameter wafer capable system
  • Pieces possible by mounting to 4 ” wafer with thermal compound

Documentation

Recipes