Latest revision as of 15:51, 31 January 2014

HF Vapor Etch

Tool Type	Dry Etch
Location	Bay 2
Supervisor	Mike Silva
Supervisor Phone	(805) 893-3096
Supervisor E-Mail	silva@ece.ucsb.edu

Description	Vapor HF Etcher
Manufacturer	SPTS Inc
Dry Etch Recipes

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About

The applications of this tool are mainly in MEMS-device fabrication areas (releasing a MEMS structure by etching a sacrificial SiO₂ layer below) with the use of Al₂O₃, Al or some other metal as an etch mask at 45^oC. The tool uses vapor HF (VHF), EtOH (Ethanol vapor is an Alcohol-based one, ionizing the HF and activating etching, influencing within wafer etch uniformity, and being most compatible with VHF), and N₂ gases and can process small sample(s) (on a 8^" Si carrier wafer) up to an 8^" wafer. There are 5 standard etch recipes installed in the tool with the SiO₂ etch rate from low to high. The SiO₂ under etch rate is from ~10nm/min to ~350nm/min.

Documentation

@@ Line 1: / Line 1: @@
 {{tool|{{PAGENAME}}
-|picture=
+|picture=IMG_2416_1.jpg
 |type = Dry Etch
 |super= Mike Silva
-|phone=(805)839-3918x216
+|phone=(805)839-3918x219
 |location=Bay 2
 |email=silva@ece.ucsb.edu
 |description = Vapor HF Etcher
-|manufacturer =  [http://www.xactix.com/ SPTS Inc]
+|manufacturer =  [http://www.spts.com/products/release-etch/uEtch/ SPTS Inc]
 |materials =
 |toolid=31
 }}
 = About  =
-The applications of this tool are mainly in MEMS-device fabrication areas (releasing a MEMS structure by etching a sacrificial layer below), in which Si or Ge or even some metals, such as Mo, can be isotropically dry etched using gaseous XeF<sub>2</sub> (no plasma enhancement or heating is needed) with the use of photoresist or SiO<sub>2</sub> or Al as an etch mask at room temperature. For users who want to etch through or very deep into a Si wafer, they should use the Si Deep RIE tool in the lab. The XeF<sub>2</sub> etch process is a purely chemical one and usually results in a rough etched surface. The tool is operated in a pulsed mode in which the etch chamber is repeatedly filled with XeF<sub>2</sub> gas and, then, pumped out (to 0.3 Torr). You can also add N<sub>2</sub> gas, together with XeF<sub>2</sub> gas, into the etch chamber for some applications. There is a microscope attached to this tool, with which you can monitor the etch process of your sample. You can change the number of etch cycles during a run, which will be effective in that run. Also, you can manually stop a run based on microscope observations.
+The applications of this tool are mainly in MEMS-device fabrication areas (releasing a MEMS structure by etching a sacrificial SiO<sub>2</sub> layer below) with the use of Al<sub>2</sub>O<sub>3</sub>, Al or some other metal as an etch mask at 45<sup>o</sup>C.  The tool uses vapor HF (VHF), EtOH (Ethanol vapor is an Alcohol-based one, ionizing the HF and activating etching, influencing within wafer etch uniformity, and being most compatible with VHF), and N<sub>2</sub> gases and can process small sample(s) (on a 8<sup>"</sup> Si carrier wafer) up to an 8<sup>"</sup> wafer. There are 5 standard etch recipes installed in the tool with the SiO<sub>2</sub> etch rate from low to high. The SiO<sub>2</sub> under etch rate is from ~10nm/min to ~350nm/min.
 =Documentation=
-*[[media:Xactic-XetchX3-System-Manual.pdf|System Manual]]
+*[[media:SPTS-Primaxx_uEtch_Presentation-a.pdf|System Manual]]
-*[[media:XeF2-Results.pdf|Si Etching Profile & Results]]
+*[[media:SPTS-Primaxx_uEtch_Presentation-b.pdf|System Manual]]
+*[[media:25-Dry_Etch_of_Unaxis_ICP-grown_SiO2_using_Vapor_HF_tool-a.pdf|Si Etching Profile & Results]]
+*[[media:26-Dry_Etch_of_Unaxis_ICP-grown_SiO2_using_Vapor_HF_tool-b.pdf|Si Etching Profile & Results]]

Difference between revisions of "HF Vapor Etch"

Latest revision as of 15:51, 31 January 2014

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