Focused Ion-Beam Lithography (Raith Velion)

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Focused Ion-Beam Lithography (Raith Velion) Tool Type Lithography Location Bay 1 Supervisor Dan Read Supervisor Phone (805) 893-3138 Supervisor E-Mail dread@ucsb.edu Description Focused Ion Beam Lithography Manufacturer Raith Gmbh Model Velion

About

The Raith Velion ion beam tool was installed at UCSB in 2020 and signed off and avaiable for. use in early 2021.

Detailed Specifications

nanoFIB column:

• Liquid Metal Alloy Ion Sources (LMAIS) providing ions for Gallium-free patterning (Au, Si)
• High resolution patterning capabilities (minimum feature size < 15nm)
• Fully corrected write fields (distortion, stigmation)
• Long term current stability (days)

Laser Interferometer stage:

• Mechanical movement at 1nm precision
• Continuous stage modes for stitch free FIB patterning on full 4”wafer scale
• Stitching and overlay accuracy:  < 50 nm ( mean+3 sigma)

FE SEM

• Process control for rapid prototyping

Additional Capabilities:  

• Automated height sensing to detect sample surface height variation for automated correction
• Pt Gas Iinjection System (GIS) deposition
• Raith Nanosuite software incl. CAD (GDSII) navigation & patterning

Recipes

• Recipes > Lithography > FIB Lithography
  • Contains starting recipes etc.