Difference between revisions of "Focused Ion-Beam Lithography (Raith Velion)"
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|location=Bay 1 |
|location=Bay 1 |
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|description = Focused Ion Beam Lithography |
|description = Focused Ion Beam Lithography |
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| − | |manufacturer = Raith |
+ | |manufacturer = Raith GmbH |
|model = Velion |
|model = Velion |
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|materials = |
|materials = |
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| − | |toolid= |
+ | |toolid=69 |
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}} |
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= About = |
= About = |
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| − | The 6300FS machine was installed at UCSB in May 2007. |
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| + | VELION is a novel FIB-SEM instrument dedicated to advanced nanofabrication, in which FIB is the true priority technique. An evolution of Raith’s ionLINE, the ion column at the vertical position features a unique design to meet the most demanding nanofabrication requirements. It is supported by a field emission SEM solution as well as a highest-precision laser interferometer-controlled sample stage. |
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| − | This system uses the vector scan approach for electron beam deflection within a field, step and repeat for stage movement between fields, the combination of which allows the entire area of the sample to be exposed to the electron beam. |
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| + | With its FIB-prioritized nanofabrication setup, including SEM and a high-accuracy stage, VELION allows for versatile use in four different operation modes that offer |
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| − | The machine can be run at 25, 50 and 100 kV. Note however that only the 100kV mode is used at UCSB. |
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| + | • direct and versatile FIB patterning for simplified, flexible, 3D, and automated processing |
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| ⚫ | |||
| − | *Utilizes a “Hi-brightness” thermal field emission electron source (ZnO/W) with a minimum spot-size at the substrate of 2nm; operates at 100kV only |
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| − | *Unique two lens/deflector scanning system: |
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| − | **<u>4th lens</u> => 20-25nm minimum line-width, 1.000nm scan step resolution, 500 x 500um scan field |
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| − | **<u>5th lens</u> => 7-8 nm minimum line-width, 0.125nm scan step resolution, 62.5x62.5um scan field |
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| + | • highest-precision nanofabrication over extended areas and periods of time with both FIB and SEM |
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| − | *Maximum deflector scan speed = 25MHz (=> 40ns/pixel minimum dwell time) |
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| − | *150x150 mm writable area; stage position control to 0.6nm accuracy (λ/1024); 10mm/s maximum stage speed |
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| + | • SEM imaging for in-situ process control, inspection and sample preparation. |
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| − | *Dynamic Focus and Stigmation Control for improved writing performance across the entire scan field. |
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| − | *UNIX computer controlled |
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| + | The Raith Velion ion beam tool was installed at UCSB in 2020 and signed off and avaiable for. use in early 2021. |
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| − | *Advanced Fracturing software available (Layout BEAMER from GeniSys, Inc) |
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| − | ** automated proximity correction of patterns possible |
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| − | ** ability to manually position write fields within a pattern for optimum inter-field writing performance |
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| − | ** ability to adjust beam scanning strategy within a write field for optimum intra-field writing performance |
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| − | ** fine tuning of line-edge roughness by shot pitch correction |
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| + | nanoFIB column: |
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| + | * Liquid Metal Alloy Ion Sources (LMAIS) providing ions for Gallium-free patterning (Au, Si) |
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| + | * High resolution patterning capabilities (minimum feature size < 15nm) |
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| + | * Fully corrected write fields (distortion, stigmation) |
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| + | * Long term current stability (days) |
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| + | Laser Interferometer stage: |
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| + | * Mechanical movement at 1nm precision |
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| + | * Continuous stage modes for stitch free FIB patterning on full 4”wafer scale |
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| + | * Stitching and overlay accuracy: < 50 nm ( mean+3 sigma) |
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| + | FE SEM |
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| + | * Process control for rapid prototyping |
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| + | Additional Capabilities: |
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| + | * Automated height sensing to detect sample surface height variation for automated correction |
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| + | * Pt Gas Injection System (GIS) localized deposition/writing |
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| + | * |
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| + | * Raith Nanosuite software including CAD (GDSII) navigation & patterning |
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== Recipes == |
== Recipes == |
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| − | * |
+ | * Recipes > Lithography > '''[[Lithography Recipes#FIB Lithography Recipes .28Raith Velion.29|<u>FIB Lithography</u>]]''' |
| − | ** Contains starting recipes etc. |
+ | ** ''Contains starting recipes etc.'' |
Latest revision as of 09:56, 15 March 2021
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About
VELION is a novel FIB-SEM instrument dedicated to advanced nanofabrication, in which FIB is the true priority technique. An evolution of Raith’s ionLINE, the ion column at the vertical position features a unique design to meet the most demanding nanofabrication requirements. It is supported by a field emission SEM solution as well as a highest-precision laser interferometer-controlled sample stage.
With its FIB-prioritized nanofabrication setup, including SEM and a high-accuracy stage, VELION allows for versatile use in four different operation modes that offer
• direct and versatile FIB patterning for simplified, flexible, 3D, and automated processing
• highest-precision nanofabrication over extended areas and periods of time with both FIB and SEM
• SEM imaging for in-situ process control, inspection and sample preparation.
The Raith Velion ion beam tool was installed at UCSB in 2020 and signed off and avaiable for. use in early 2021.
Detailed Specifications
nanoFIB column:
- Liquid Metal Alloy Ion Sources (LMAIS) providing ions for Gallium-free patterning (Au, Si)
- High resolution patterning capabilities (minimum feature size < 15nm)
- Fully corrected write fields (distortion, stigmation)
- Long term current stability (days)
Laser Interferometer stage:
- Mechanical movement at 1nm precision
- Continuous stage modes for stitch free FIB patterning on full 4”wafer scale
- Stitching and overlay accuracy: < 50 nm ( mean+3 sigma)
FE SEM
- Process control for rapid prototyping
Additional Capabilities:
- Automated height sensing to detect sample surface height variation for automated correction
- Pt Gas Injection System (GIS) localized deposition/writing
- Raith Nanosuite software including CAD (GDSII) navigation & patterning
Recipes
- Recipes > Lithography > FIB Lithography
- Contains starting recipes etc.