Difference between revisions of "E-Beam 2 (Custom)"

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{{tool|{{PAGENAME}}
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{{tool2|{{PAGENAME}}
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|picture=e-beam2.jpg
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|picture=IMG 5388.jpg
 
|type = Vacuum Deposition
  
|type = Vacuum Deposition
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|super= Tony Bosch
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|super= Lee Sawyer
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|super2= Don Freeborn
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|phone=(805)839-3918x217
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|phone=(805)839-2123
 
|location=Bay 3
  
|location=Bay 3
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|email=bosch@ece.ucsb.edu
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|email=lee_sawyer@ucsb.edu
 
|description = Electron-Beam Evaporation System
  
|description = Electron-Beam Evaporation System
 
|manufacturer = Temescal
  
|manufacturer = Temescal
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|toolid=8
  
|toolid=8
 
}}
 
}}
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= About =
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==About==
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This electron-beam evaporation system is used for the controlled deposition of thin dielectric films. The films are evaporated from a wide variety of solid sources. The most common dielectrics deposited are: SiO<sub>2</sub>, SiO, TiO<sub>2</sub>, Ta<sub>2</sub>O<sub>5</sub>, SrF<sub>2</sub>. Other materials may be evaporated upon request. Oxygen gas can be bled into the system during deposition to try to maintain the stoichiometry during deposition. Fixturing for heating the substrate can also be used. A crystal thickness monitor is used to control the deposition thickness. The dielectrics deposited by this system are typically used for optical coatings (anti-reflective and highly reflective multiple layer stacks), electrical insulators, and reactive ion etching masks. Samples up to ~ 3” x 3” can be placed into this system for evaporation. Typical deposition rates are several Angstroms/second.
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This electron-beam evaporation system is used for the controlled deposition of thin dielectric films. The films are evaporated from a wide variety of solid sources. The most common dielectrics deposited are: SiO<sub>2</sub>, ITO, TiO<sub>2</sub>, Ta<sub>2</sub>O<sub>5</sub>, and SrF<sub>2</sub>. Other materials may be evaporated upon request. Oxygen gas can be bled into the system during deposition to try to maintain the stoichiometry during deposition. Fixturing for heating the substrate can also be used. A crystal thickness monitor is used to control the deposition thickness. The dielectrics deposited by this system are typically used for optical coatings (anti-reflective), electrical insulators, and reactive ion etching masks. Samples up to ~ 5" diameter can be placed into this system for evaporation. Typical deposition rates are several Angstroms/second.
   
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= Detailed Specifications =
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==Detailed Specifications==
   
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*Temescal 10kV power supply
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*Temescal CV-6SXL 10 kV power supply
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*Temescal 4-pocket series 260 e-beam source
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*Temescal 4-pocket Series 260 E-Beam turret source
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*Temescal TemEbeam Controller (EBC); controls the high voltage power supply, electron beam position (up to 8 sweep patterns per pocket), and source pocket position
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*Electron beam controller with sweep rate and amplitude control
 
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*Inficon IC/5 Thin Film Deposition Controller
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*Cryo-pumped system with ~ 1e-7 ultimate base pressure
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*Cryo-pumped system with low E-7 ultimate base pressure
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*Automatic vacuum sequencing
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*Automatic vacuum sequencing via CHA Auto-Tech II
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*Crystal thickness monitoring
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*Crystal thickness monitoring
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*Sample size: up to 3” x 3” pieces
 
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*Computer controlled heated sample holder, can achieve sample temps up to 370°C
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*Oxygen bleed for maintaining oxide stoichiometry
  
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*Sample size: up to 5” diameter non-heated, 4" diameter heated
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*Oxygen bleed for maintaining oxide stoichiometry via MKS mass flow controller
   
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==Documentation==
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<br>
  
⚫
= Materials Table =
  
   
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*[https://wiki.nanotech.ucsb.edu/w/images/8/80/EB2_SOP_Rev_D.pdf E-Beam #2 Standard Operating Procedure]
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{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" class="collapsible collapsed wikitable"
  
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|-
  
  ⚫
==Materials Table==
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! colspan=5 width=1300 height=35 bgcolor="#D0E7FF" align="center"|<div style="font-size: 150%;">Materials Table</div>
  
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For the materials tables, please visit the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #2)|E-Beam Recipe Page]].
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|- bgcolor="#D0E7FF"
 
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! width="45" bgcolor="#D0E7FF" align="center" | '''Material'''
 
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! width="45" bgcolor="#D0E7FF" align="center" | '''Density, g/cm3'''
 
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! width="45" bgcolor="#D0E7FF" align="center" | '''Z Ratio'''
 
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! width="45" bgcolor="#D0E7FF" align="center" | '''Tooling factor, %'''
 
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! width="100" bgcolor="#D0E7FF" align="center" | '''Comments'''
  
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|-
  
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|Al<sub>2</sub>O<sub>3</sub>
  
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|3.97
  
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|0.336
  
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|140.0
  
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|Tony, could you please check this?
  
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|-
  
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|GeO<sub>2</sub>
  
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|5.35
  
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|0.516
  
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|139.0
  
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|Check this
  
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|-
  
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|ITO
  
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|6.43-7.16
  
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|0.841
  
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|139.0
  
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|Check this
  
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|-
  
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|MgO2
  
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|3.58
  
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|0.411
  
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|157.6
  
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|Check this
  
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|-
  
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|Si
  
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|2.32
  
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|0.712
  
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|150.0
  
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|Check this
  
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|-
  
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|SiO2
  
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|2.20-2.70
  
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|1.070
  
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|157.6
  
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|Check this
  
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|-
  
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|SiOx
  
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|2.13
  
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|0.87
  
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|130.0
  
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|Check this
  
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|-
  
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|SrF2
  
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|4.28
  
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|0.727
  
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|140.0
  
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|Check this
  
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|-
  
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|Ta2O5
  
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|8.2
  
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|0.30
  
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|157.6
  
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|Check this
  
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|-
  
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|TiO2
  
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|4.26
  
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|0.400
  
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|139.0
  
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|Check this
  
−
|-
  

Revision as of 14:35, 8 September 2022

E-Beam 2 (Custom)
IMG 5388.jpg
Location Bay 3
Tool Type Vacuum Deposition
Manufacturer Temescal
Description Electron-Beam Evaporation System
Primary Supervisor Lee Sawyer
(805) 893-2123
lee_sawyer@ucsb.edu

Secondary Supervisor

Don Freeborn

Recipes Vacuum Deposition RecipesN/A
SignupMonkey: Sign up for this tool


About

This electron-beam evaporation system is used for the controlled deposition of thin dielectric films. The films are evaporated from a wide variety of solid sources. The most common dielectrics deposited are: SiO2, ITO, TiO2, Ta2O5, and SrF2. Other materials may be evaporated upon request. Oxygen gas can be bled into the system during deposition to try to maintain the stoichiometry during deposition. Fixturing for heating the substrate can also be used. A crystal thickness monitor is used to control the deposition thickness. The dielectrics deposited by this system are typically used for optical coatings (anti-reflective), electrical insulators, and reactive ion etching masks. Samples up to ~ 5" diameter can be placed into this system for evaporation. Typical deposition rates are several Angstroms/second.

Detailed Specifications

  • Temescal CV-6SXL 10 kV power supply
  • Temescal 4-pocket Series 260 E-Beam turret source
  • Temescal TemEbeam Controller (EBC); controls the high voltage power supply, electron beam position (up to 8 sweep patterns per pocket), and source pocket position
  • Inficon IC/5 Thin Film Deposition Controller
  • Cryo-pumped system with low E-7 ultimate base pressure
  • Automatic vacuum sequencing via CHA Auto-Tech II
  • Crystal thickness monitoring
  • Computer controlled heated sample holder, can achieve sample temps up to 370°C
  • Sample size: up to 5” diameter non-heated, 4" diameter heated
  • Oxygen bleed for maintaining oxide stoichiometry via MKS mass flow controller

Documentation

Materials Table

For the materials tables, please visit the E-Beam Recipe Page.

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