Difference between revisions of "E-Beam 2 (Custom)"

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{{tool|{{PAGENAME}}
 
{{tool|{{PAGENAME}}
|picture=e-beam2.jpg
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|picture=IMG_5388.JPG
 
|type = Vacuum Deposition
 
|type = Vacuum Deposition
|super= Tony Bosch
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|super= Lee Sawyer
|phone=(805)839-3918x217
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|phone=(805)839-2123
 
|location=Bay 3
 
|location=Bay 3
|email=bosch@ece.ucsb.edu
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|email=lee_sawyer@ucsb.edu
 
|description = Electron-Beam Evaporation System
 
|description = Electron-Beam Evaporation System
 
|manufacturer = Temescal
 
|manufacturer = Temescal
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|toolid=8
 
|toolid=8
 
}}  
 
}}  
= About =
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==About==
This electron-beam evaporation system is used for the controlled deposition of thin dielectric films. The films are evaporated from a wide variety of solid sources. The most common dielectrics deposited are: SiO<sub>2</sub>, SiO, TiO<sub>2</sub>, Ta<sub>2</sub>O<sub>5</sub>, SrF<sub>2</sub>. Other materials may be evaporated upon request. Oxygen gas can be bled into the system during deposition to try to maintain the stoichiometry during deposition. Fixturing for heating the substrate can also be used. A crystal thickness monitor is used to control the deposition thickness. The dielectrics deposited by this system are typically used for optical coatings (anti-reflective and highly reflective multiple layer stacks), electrical insulators, and reactive ion etching masks. Samples up to ~ 3” x 3” can be placed into this system for evaporation. Typical deposition rates are several Angstroms/second.  
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This electron-beam evaporation system is used for the controlled deposition of thin dielectric films. The films are evaporated from a wide variety of solid sources. The most common dielectrics deposited are: SiO<sub>2</sub>, SiO, TiO<sub>2</sub>, Ta<sub>2</sub>O<sub>5</sub>, ITO and SrF<sub>2</sub>. Other materials may be evaporated upon request. Oxygen gas can be bled into the system during deposition to try to maintain the stoichiometry during deposition. Fixturing for heating the substrate can also be used. A crystal thickness monitor is used to control the deposition thickness. The dielectrics deposited by this system are typically used for optical coatings (anti-reflective), electrical insulators, and reactive ion etching masks. Samples up to ~ 5" diameter can be placed into this system for evaporation. Typical deposition rates are several Angstroms/second.
  
= Detailed Specifications =
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==Detailed Specifications==
  
*Temescal 10kV power supply  
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*Temescal 10kV power supply
*Temescal 4-pocket series 260 e-beam source  
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*Temescal 4-pocket series 260 e-beam source
*Electron beam controller with sweep rate and amplitude control  
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*Temescal Electron beam controller with sweep rate and amplitude control
*Cryo-pumped system with ~ 1e-7 ultimate base pressure  
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*Cryo-pumped system with ~ 4.0E-7 ultimate base pressure
*Automatic vacuum sequencing  
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*Automatic vacuum sequencing
*Crystal thickness monitoring  
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*Crystal thickness monitoring
*Sample size: up to 3” x 3” pieces  
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*Sample size: up to 5” diameter pieces without heat, 4" diameter heated
 
*Oxygen bleed for maintaining oxide stoichiometry
 
*Oxygen bleed for maintaining oxide stoichiometry
  
<br>
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==Documentation==
= Materials Table =
 
  
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" class="collapsible collapsed wikitable"
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*[https://wiki.nanotech.ucsb.edu/wiki/images/2/2b/EB2_SOP_Rev_B.pdf E-Beam #2 Standard Operating Procedure]
|-
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! colspan=5 width=1300 height=35 bgcolor="#D0E7FF" align="center"|<div style="font-size: 150%;">Materials Table</div>
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==Materials Table==
|- bgcolor="#D0E7FF"
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For the materials tables, please visit the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #2)|E-Beam Recipe Page]].
! width="45" bgcolor="#D0E7FF" align="center" | '''Material'''
 
! width="45" bgcolor="#D0E7FF" align="center" | '''Density, g/cm3'''
 
! width="45" bgcolor="#D0E7FF" align="center" | '''Z Ratio'''
 
! width="45" bgcolor="#D0E7FF" align="center" | '''Tooling factor, %'''
 
! width="100" bgcolor="#D0E7FF" align="center" | '''Comments'''
 
|-
 
|Al<sub>2</sub>O<sub>3</sub>
 
|3.97
 
|0.336
 
|140.0
 
|Tony, could you please check this?
 
|-
 
|Ge<sub>/sub>O<sub>2<sub>
 
|5.35
 
|0.516
 
|139.0
 
|Check this
 
|-
 
|ITO
 
|6.43-7.16
 
|0.841
 
|139.0
 
|Check this
 
|-
 
|MgO2
 
|3.58
 
|0.411
 
|157.6
 
|Check this
 
|-
 
|Si
 
|2.32
 
|0.712
 
|150.0
 
|Check this
 
|-
 
|SiO2
 
|2.20-2.70
 
|1.070
 
|157.6
 
|Check this
 
|-
 
|SiOx
 
|2.13
 
|0.87
 
|130.0
 
|Check this
 
|-
 
|SrF2
 
|4.28
 
|0.727
 
|140.0
 
|Check this
 
|-
 
|Ta2O5
 
|8.2
 
|0.30
 
|157.6
 
|Check this
 
|-
 
|TiO2
 
|4.26
 
|0.400
 
|139.0
 
|Check this
 
|-
 

Latest revision as of 09:25, 3 September 2021

E-Beam 2 (Custom)
IMG 5388.JPG
Tool Type Vacuum Deposition
Location Bay 3
Supervisor Lee Sawyer
Supervisor Phone (805) 893-2123
Supervisor E-Mail lee_sawyer@ucsb.edu
Description Electron-Beam Evaporation System
Manufacturer Temescal
Vacuum Deposition Recipes
Sign up for this tool


About

This electron-beam evaporation system is used for the controlled deposition of thin dielectric films. The films are evaporated from a wide variety of solid sources. The most common dielectrics deposited are: SiO2, SiO, TiO2, Ta2O5, ITO and SrF2. Other materials may be evaporated upon request. Oxygen gas can be bled into the system during deposition to try to maintain the stoichiometry during deposition. Fixturing for heating the substrate can also be used. A crystal thickness monitor is used to control the deposition thickness. The dielectrics deposited by this system are typically used for optical coatings (anti-reflective), electrical insulators, and reactive ion etching masks. Samples up to ~ 5" diameter can be placed into this system for evaporation. Typical deposition rates are several Angstroms/second.

Detailed Specifications

  • Temescal 10kV power supply
  • Temescal 4-pocket series 260 e-beam source
  • Temescal Electron beam controller with sweep rate and amplitude control
  • Cryo-pumped system with ~ 4.0E-7 ultimate base pressure
  • Automatic vacuum sequencing
  • Crystal thickness monitoring
  • Sample size: up to 5” diameter pieces without heat, 4" diameter heated
  • Oxygen bleed for maintaining oxide stoichiometry

Documentation

Materials Table

For the materials tables, please visit the E-Beam Recipe Page.