Difference between revisions of "E-Beam 1 (Sharon)"

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Revision as of 08:25, 27 June 2012

E-Beam 1 (Sharon)
Tool Type Vacuum Deposition
Location Bay 3
Supervisor Brian Lingg
Supervisor Phone (805) 893-8145
Supervisor E-Mail lingg_b@ucsb.edu
Description Four Pocket Electron Beam Evaporator
Manufacturer Sharon Vacuum Co., Inc.
Materials # Al
  1. Au
  2. Ni
  3. etc...
Vacuum Deposition Recipes


This section will discuss the basics about the tool.

The Sharon is a cryo-pumped thin film evaporator with a Temescal four hearth 270° bent beam evaporation source. The system incorporates a Commonwealth Scientific Corp. ion source for in-situ sample cleaning. Fixturing in the Sharon will accept any size sample up to 3.5-inch diameter. In addition, a rotation fixture is easily installed which permits adjustable angle, 360° variable speed rotation of any size sample, up to 1.5-inch diameter. This feature is particularly useful for promoting step coverage of irregular surfaces.

The Sharon is used for the evaporation of high purity metals, e.a. Al, Au, Ni, Ge, AuGe, Ti, Pt etc., for interconnect and ohmic contact metalization for fabrication of III-V compound semiconductor and silicon device fabrication.


This section will outline the basic processes that run on the tool.

Process #1

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Process #2

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Materials Table

Material Position Hearth / Crucible Film Number Density Z Ratio Tooling Comments
Ag 4 C 5 10.5 0.524 140
Al 2 C 6 2.7 1.080 118
Al2O3 1 C 6 3.97 0.50 169
Au 4 C 4 19.3 0.381 138 Bazookas can be used at 20-30Å/sec.
AuGe 3 C 5 17.63 0.397 151 Composition unpredictable unless you practically empty the crucible.
Cr 3 H 6 7.2 0.305 140 Do not evaporate more than 200Å of Cr in the E-Beam evaporator.
Fe 7.86 0.349
Ge 3 C 6 5.35 0.516 130
MgO 1 6
Mo 10.2 0.257
Ni 1 H 1 8.91 0.331 140 Prone to spitting. Cool down for 15 minutes before venting.
NiCr 1 H 6 8.23 0.321
Nb 4 C 6 8.57 0.516 Cool down for at least 35 minutes before venting.
Pd 1 H 9 12.0 0.357 140
Pt 1 C 8 21.40 0.245 140 Prone to spitting. Evaporate at 1.5Å/sec or less.
Si 2 H 2 2.32 0.712 150 Cool down very slowly after evaporating lest you crack the source.
SiO C 6 2.13 0.87 132
SiO2 1 C 6 2.2 1.07 140 Please change the crystal and the upper mirror after evaporating oxide.
SrF 1 C 6 4.28 0.727 140
Ta 1 H 6 16.6 0.262 Requires extremely high current. Minimum 35 minute cool down. Hearth #3 may be used. Call me before you try Ta.
W 1 C 6 19.3 0.163 138
Ti 3 H 3 4.50 0.628 139

Detailed Specifications

Details about the tool

  • Cryopump: CTI Cryotorr 8F with air-cooled compressor
  • Pumping speed: 4,000 l/sec. for H2O, 1,500 l/sec. for air, 2,200 l/sec. for H2, 200 l/sec. for Ar
  • Mechanical Pump: Varian, Model SD700, 35 CFM
  • Electron Beam Source: Temescal, Model STIH-270-2MB, four 15 cc hearths
  • Electron Beam Power Supply: Temescal, Model CV8A-111, -5 to -10 kV dc, 0.8A dc max. beam current; XYS-8 Sweep Control
  • Deposition Control: Inficon IC 6000, 6 film programs; 37 parameters for automatic or manual deposition control based on a resonating quartz crystal sensor
  • Ion Source: Commonwealth Scientific Corp., MOD. 2. Kaufman-type, 3cm ion source; beam currents to 100mA at 1000eV

See Also

Links to documents pertaining to the tool...