Difference between revisions of "E-Beam 1 (Sharon)"
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|picture=e-beam1.jpg |
|picture=e-beam1.jpg |
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|type = Vacuum Deposition |
|type = Vacuum Deposition |
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| − | |super= |
+ | |super= Bill Millerski |
| − | |phone=(805)839- |
+ | |phone=(805)839-7975 |
|location=Bay 3 |
|location=Bay 3 |
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| − | |email= |
+ | |email=dfreeborn@ece.ucsb.edu |
|description = Four Pocket Electron Beam Evaporator |
|description = Four Pocket Electron Beam Evaporator |
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|manufacturer = Sharon Vacuum Co., Inc. |
|manufacturer = Sharon Vacuum Co., Inc. |
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| + | |toolid=7 |
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| − | |materials = |
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| + | }} |
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| − | }} __TOC__ |
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| − | |||
= About = |
= About = |
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| + | |||
| + | The Sharon is a cryo-pumped thin film evaporator with a Temescal four hearth 270° bent electron beam evaporation source. The system incorporates a Commonwealth Scientific Corp. ion source for in-situ sample cleaning. Fixturing in the Sharon will accept any size sample up to 3.5-inch diameter. In addition, a rotation fixture is easily installed which permits adjustable angle, 360° variable speed rotation of any size sample, up to 1.5-inch diameter. This feature is particularly useful for promoting step coverage of irregular surfaces. |
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| + | A new fixture allowing up to four - 4" diameter wafers is now installed. |
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| − | The Sharon is a cryo-pumped thin film evaporator with a Temescal four hearth 270° bent beam evaporation source. The system incorporates a Commonwealth Scientific Corp. ion source for in-situ sample cleaning. Fixturing in the Sharon will accept any size sample up to 3.5-inch diameter. In addition, a rotation fixture is easily installed which permits adjustable angle, 360° variable speed rotation of any size sample, up to 1.5-inch diameter. This feature is particularly useful for promoting step coverage of irregular surfaces. |
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The Sharon is used for the evaporation of high purity metals, e.a. Al, Au, Ni, Ge, AuGe, Ti, Pt etc., for interconnect and ohmic contact metalization for fabrication of III-V compound semiconductor and silicon device fabrication. |
The Sharon is used for the evaporation of high purity metals, e.a. Al, Au, Ni, Ge, AuGe, Ti, Pt etc., for interconnect and ohmic contact metalization for fabrication of III-V compound semiconductor and silicon device fabrication. |
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| − | |||
| − | = Processes = |
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| − | |||
| − | '''This section will outline the basic processes that run on the tool.'''<br> |
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| − | |||
| − | == Process #1 == |
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| − | |||
| − | Nam in odio quis turpis interdum dignissim ac sed dui. Nunc in lorem purus, et scelerisque velit. Maecenas at eros mauris. Donec adipiscing tristique fringilla. Nullam eu quam id ipsum luctus bibendum. Morbi ac luctus justo. Integer vitae ante ac lacus consectetur iaculis. Aliquam adipiscing faucibus fringilla. Duis bibendum scelerisque nulla vel vulputate. Fusce varius molestie pharetra. Cras suscipit sodales velit, id tempor erat fringilla eget. Pellentesque sollicitudin interdum dolor et condimentum. Donec malesuada accumsan eros ut semper. Fusce sollicitudin, sapien id ullamcorper euismod, eros augue tincidunt risus, sed venenatis turpis lacus ut elit. Sed eu sollicitudin mi. Mauris eget est eu ligula vulputate congue non et leo. |
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| − | |||
| − | == Process #2 == |
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| − | |||
| − | Proin ut turpis lorem, eu scelerisque elit. Duis ullamcorper sem quis velit mattis in molestie justo pellentesque. Maecenas semper, quam nec posuere tempus, orci nisi pellentesque nulla, eu fringilla felis massa non nisi. Integer sit amet enim et nulla accumsan aliquet. Cras vitae aliquam risus. Aenean dapibus risus sed nunc pharetra hendrerit suscipit sem interdum. Cras feugiat cursus diam, non varius odio fermentum ac. Nulla nec rutrum augue. Aliquam pellentesque orci eget libero auctor imperdiet. Vivamus scelerisque porta tincidunt. Vivamus adipiscing ultricies porttitor. Quisque viverra dolor in nisl tempor et lacinia nulla euismod. |
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| − | |||
| − | = Materials Table = |
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| − | |||
| − | {| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" class="wikitable" |
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| − | |- bgcolor="#D0E7FF" |
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| − | ! width="75" bgcolor="#D0E7FF" align="center" | '''Material''' |
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| − | ! width="75" bgcolor="#D0E7FF" align="center" | '''Position''' |
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| − | ! width="75" bgcolor="#D0E7FF" align="center" | '''Hearth / Crucible''' |
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| − | ! width="85" bgcolor="#D0E7FF" align="center" | '''Film Number''' |
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| − | ! width="75" bgcolor="#D0E7FF" align="center" | '''Density''' |
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| − | ! width="75" bgcolor="#D0E7FF" align="center" | '''Z Ratio''' |
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| − | ! width="75" bgcolor="#D0E7FF" align="center" | '''Tooling''' |
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| − | ! width="500" bgcolor="#D0E7FF" align="center" | '''Comments''' |
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| − | |- |
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| − | | Ag |
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| − | | 4 |
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| − | | C |
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| − | | 5 |
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| − | | 10.5 |
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| − | | 0.524 |
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| − | | 140 |
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| − | | |
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| − | |- |
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| − | | Al |
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| − | | 2 |
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| − | | C |
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| − | | 6 |
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| − | | 2.7 |
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| − | | 1.080 |
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| − | | 118 |
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| − | | |
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| − | |- |
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| − | | Al<sub>2</sub>O<sub>3</sub> |
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| − | | 1 |
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| − | | C |
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| − | | 6 |
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| − | | 3.97 |
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| − | | 0.50 |
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| − | | 169 |
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| − | | |
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| − | |- |
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| − | | Au |
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| − | | 4 |
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| − | | C |
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| − | | 4 |
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| − | | 19.3 |
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| − | | 0.381 |
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| − | | 138 |
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| − | | Bazookas can be used at 20-30Å/sec. |
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| − | |- |
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| − | | AuGe |
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| − | | 3 |
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| − | | C |
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| − | | 5 |
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| − | | 17.63 |
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| − | | 0.397 |
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| − | | 151 |
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| − | | Composition unpredictable unless you practically empty the crucible. |
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| − | |- |
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| − | | Cr |
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| − | | 3 |
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| − | | H |
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| − | | 6 |
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| − | | 7.2 |
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| − | | 0.305 |
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| − | | 140 |
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| − | | Do not evaporate more than 200Å of Cr in the E-Beam evaporator. |
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| − | |- |
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| − | | Fe |
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| − | | |
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| − | | |
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| − | | |
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| − | | 7.86 |
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| − | | 0.349 |
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| − | | |
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| − | | |
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| − | |- |
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| − | | Ge |
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| − | | 3 |
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| − | | C |
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| − | | 6 |
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| − | | 5.35 |
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| − | | 0.516 |
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| − | | 130 |
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| − | | |
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| − | |- |
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| − | | MgO |
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| − | | 1 |
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| − | | |
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| − | | 6 |
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| − | | |
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| − | | |
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| − | | |
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| − | | |
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| − | |- |
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| − | | Mo |
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| − | | |
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| − | | |
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| − | | |
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| − | | 10.2 |
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| − | | 0.257 |
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| − | | |
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| − | | |
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| − | |- |
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| − | | Ni |
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| − | | 1 |
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| − | | H |
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| − | | 1 |
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| − | | 8.91 |
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| − | | 0.331 |
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| − | | 140 |
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| − | | Prone to spitting. Cool down for 15 minutes before venting. |
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| − | |- |
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| − | | NiCr |
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| − | | 1 |
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| − | | H |
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| − | | 6 |
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| − | | 8.23 |
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| − | | 0.321 |
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| − | | |
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| − | | |
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| − | |- |
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| − | | Nb |
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| − | | 4 |
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| − | | C |
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| − | | 6 |
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| − | | 8.57 |
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| − | | 0.516 |
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| − | | |
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| − | | Cool down for at least 35 minutes before venting. |
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| − | |- |
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| − | | Pd |
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| − | | 1 |
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| − | | H |
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| − | | 9 |
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| − | | 12.0 |
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| − | | 0.357 |
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| − | | 140 |
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| − | | |
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| − | |- |
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| − | | Pt |
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| − | | 1 |
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| − | | C |
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| − | | 8 |
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| − | | 21.40 |
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| − | | 0.245 |
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| − | | 140 |
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| − | | Prone to spitting. Evaporate at 1.5Å/sec or less. |
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| − | |- |
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| − | | Si |
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| − | | 2 |
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| − | | H |
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| − | | 2 |
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| − | | 2.32 |
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| − | | 0.712 |
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| − | | 150 |
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| − | | Cool down very slowly after evaporating lest you crack the source. |
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| − | |- |
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| − | | SiO |
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| − | | |
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| − | | C |
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| − | | 6 |
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| − | | 2.13 |
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| − | | 0.87 |
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| − | | 132 |
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| − | | |
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| − | |- |
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| − | | SiO<sub>2</sub> |
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| − | | 1 |
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| − | | C |
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| − | | 6 |
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| − | | 2.2 |
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| − | | 1.07 |
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| − | | 140 |
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| − | | Please change the crystal and the upper mirror after evaporating oxide. |
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| − | |- |
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| − | | SrF |
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| − | | 1 |
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| − | | C |
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| − | | 6 |
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| − | | 4.28 |
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| − | | 0.727 |
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| − | | 140 |
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| − | | |
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| − | |- |
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| − | | Ta |
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| − | | 1 |
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| − | | H |
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| − | | 6 |
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| − | | 16.6 |
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| − | | 0.262 |
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| − | | |
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| − | | Requires extremely high current. Minimum 35 minute cool down. Hearth #3 may be used. Call me before you try Ta. |
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| − | |- |
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| − | | W |
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| − | | 1 |
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| − | | C |
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| − | | 6 |
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| − | | 19.3 |
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| − | | 0.163 |
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| − | | 138 |
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| − | | |
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| − | |- |
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| − | | Ti |
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| − | | 3 |
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| − | | H |
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| − | | 3 |
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| − | | 4.50 |
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| − | | 0.628 |
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| − | | 139 |
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| − | | |
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| − | |} |
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= Detailed Specifications = |
= Detailed Specifications = |
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| Line 249: | Line 26: | ||
*Deposition Control: Inficon IC 6000, 6 film programs; 37 parameters for automatic or manual deposition control based on a resonating quartz crystal sensor |
*Deposition Control: Inficon IC 6000, 6 film programs; 37 parameters for automatic or manual deposition control based on a resonating quartz crystal sensor |
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*Ion Source: Commonwealth Scientific Corp., MOD. 2. Kaufman-type, 3cm ion source; beam currents to 100mA at 1000eV |
*Ion Source: Commonwealth Scientific Corp., MOD. 2. Kaufman-type, 3cm ion source; beam currents to 100mA at 1000eV |
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| + | *Pieces up to Four - 4" wafers in one run. |
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| − | |||
| + | *For single wafers: tilt with motorized rotation and sample lowering for higher effective rates, sidewall coverage, angled evaporation. |
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| − | = See Also = |
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| − | |||
| − | '''Links to documents pertaining to the tool...''' |
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| − | |||
| − | *[http://www.google.com Article about E-beam Deposition...] |
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| − | *[http://www.google.com Research from other university...] |
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| − | *etc. |
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= Documentation = |
= Documentation = |
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| + | *[https://wiki.nanotech.ucsb.edu/w/images/9/90/EB-1_operation_instructions_rev2.pdf Operating Instructions] |
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| + | = Recipes = |
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| − | *[[Media:ID_2501_Ion-Beam_Drive_-_User_Manual.pdf|ID 2501 Ion-Beam Drive - User Manual]] |
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| + | * See the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #1)|'''<u>E-Beam Recipe Page</u>''']], for the materials tables and deposition parameters for various materials. |
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| − | *[[Media:Operating_Ebeam1.pdf|EBeam 1 Operating Instructions]] |
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| − | |||
| − | [[Category:Vacuum_Deposition]] |
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Revision as of 09:08, 22 February 2022
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About
The Sharon is a cryo-pumped thin film evaporator with a Temescal four hearth 270° bent electron beam evaporation source. The system incorporates a Commonwealth Scientific Corp. ion source for in-situ sample cleaning. Fixturing in the Sharon will accept any size sample up to 3.5-inch diameter. In addition, a rotation fixture is easily installed which permits adjustable angle, 360° variable speed rotation of any size sample, up to 1.5-inch diameter. This feature is particularly useful for promoting step coverage of irregular surfaces.
A new fixture allowing up to four - 4" diameter wafers is now installed.
The Sharon is used for the evaporation of high purity metals, e.a. Al, Au, Ni, Ge, AuGe, Ti, Pt etc., for interconnect and ohmic contact metalization for fabrication of III-V compound semiconductor and silicon device fabrication.
Detailed Specifications
- Cryopump: CTI Cryotorr 8F with air-cooled compressor
- Pumping speed: 4,000 l/sec. for H2O, 1,500 l/sec. for air, 2,200 l/sec. for H2, 200 l/sec. for Ar
- Mechanical Pump: Varian, Model SD700, 35 CFM
- Electron Beam Source: Temescal, Model STIH-270-2MB, four 15 cc hearths
- Electron Beam Power Supply: Temescal, Model CV8A-111, -5 to -10 kV dc, 0.8A dc max. beam current; XYS-8 Sweep Control
- Deposition Control: Inficon IC 6000, 6 film programs; 37 parameters for automatic or manual deposition control based on a resonating quartz crystal sensor
- Ion Source: Commonwealth Scientific Corp., MOD. 2. Kaufman-type, 3cm ion source; beam currents to 100mA at 1000eV
- Pieces up to Four - 4" wafers in one run.
- For single wafers: tilt with motorized rotation and sample lowering for higher effective rates, sidewall coverage, angled evaporation.
Documentation
Recipes
- See the E-Beam Recipe Page, for the materials tables and deposition parameters for various materials.