Direct-Write Lithography Recipes

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Revision as of 18:44, 10 October 2020 by John d (talk | contribs) (→‎Positive Resist (MLA150): added THMR recipe)
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Work In Progress

This article is still under construction. It may contain factual errors. Content is subject to change.


Maskless Aligner (Heidelberg MLA150)

Photolithography Recipes for the Heidelberg MLA150. Description of litho params- different lasers available, greyscale etc.

Positive Resist (MLA150)

General notes: Hotplates used, filters, laser wavelengths, etc.

Resist Spin Cond. Bake Thickness Laser (nm) Exposure Dose (mJ/cm2) DeFocus PEB Developer Developer Time Comments
AZ4110 4 krpm/30s 95°C/60s ~ 1.1 µm 405 240 5 none AZ400K:DI 1:4 50s Used MLA design (good for isolated lines 0.8-1um)
AZ4330 4 krpm/30s 95°C/60s ~ 3.3 µm 405 320 6 none AZ400K:DI 1:4 90s Used MLA design
AZ4620
SPR 220-3.0 2.5 krpm/30s 115°C/90” ~ 2.7 µm 405 325 - 4 115°C/90s AZ300MIF 60s Used MLA design
SPR 955-CM0.9 3 krpm/30s 95°C/90” ~ 0.9 µm 405 250 - 7 110°C/90s AZ300MIF 60s Used MLA design
THMR-3600HP 1.5 krpm/45s250 rpm/s 100°C/60s 0.5 µm 405 180–220 -4 100°C/60s AZ300MiF 20s line/space:

low dose for clear-field, high does for dark-field

Negative Resist (MLA150)

General notes: Hotplates used, filters, laser wavelengths, etc.

Resist Spin Cond. Bake Thickness Laser (nm) Exposure Dose (mJ/cm2) DeFocus PEB Flood Developer Developer Time Comments
AZ5214 6 krpm/30s 95°C/60s ~ 1.0 µm 375 35 - 5 110°C/60s 60" AZ300MIF 60s Used UCSB design. Good for up to ~1.3um open line space.
AZnLOF2020 4 krpm/30s 110°C/60s ~ 2.1µm 375 340 - 3 110°C/60s none AZ300MIF 90s Used UCSB design. Good for 2um open line space.
SU-8 2075 ~70µm 375 Extremely viscous. Pour into a wide-mouthed bottle, dispense directly from bottle. Replace napkin at end.

Greyscale Lithography (MLA150)

Description...

Resist Spin Cond. Bake Thickness Exposure Dose (mJ/cm2) Focus Offset PEB Flood Developer Developer Time Comments
AZ4620 – krpm/30” 95°C/60” 60" AZ300MIF 60"
  • TBD