Difference between revisions of "Direct-Write Lithography Recipes"

From UCSB Nanofab Wiki
Jump to navigation Jump to search
(→‎Positive Resist (MLA150): note about HIMT design giving higher dose result)
(→‎Maskless Aligner (Heidelberg MLA150): links to MJB/MA6 for Flood exp)
 
(2 intermediate revisions by the same user not shown)
Line 3: Line 3:
 
__TOC__
 
__TOC__
  
== [[Maskless Aligner (Heidelberg MLA150)]] ==
+
==[[Maskless Aligner (Heidelberg MLA150)]]==
 
Photolithography Recipes for the [[Maskless Aligner (Heidelberg MLA150)|Heidelberg MLA150]].  All recipes were characterized on blank Silicon wafers. For different substrate coatings/materials, you will likely need to run a focus-exposure matrix ("series" exposure mode), using our params as a starting point.
 
Photolithography Recipes for the [[Maskless Aligner (Heidelberg MLA150)|Heidelberg MLA150]].  All recipes were characterized on blank Silicon wafers. For different substrate coatings/materials, you will likely need to run a focus-exposure matrix ("series" exposure mode), using our params as a starting point.
  
 
These recipes use the same spin and bake params as our contact aligner and stepper recipes, using built-in hotplates on the photoresist spinner benches.
 
These recipes use the same spin and bake params as our contact aligner and stepper recipes, using built-in hotplates on the photoresist spinner benches.
  
=== Positive Resist (MLA150) ===
+
'''''Any I-Line PR is usable''''', although we only characterized a select few below.  Run your own Focus-Exposure Matrix to characterize a new PR.
 +
 
 +
===Positive Resist (MLA150)===
 
''We found that positive PR's worked well with the 405nm laser - the 375nm laser would likely also work. Sub-micron features are possible.  Overexposure is recommended to avoid stitching and horiz/vert discrepancies, compensate using CD Bias [[MLA150 - Design Guidelines#High-Resolution Writing|as described here]].''
 
''We found that positive PR's worked well with the 405nm laser - the 375nm laser would likely also work. Sub-micron features are possible.  Overexposure is recommended to avoid stitching and horiz/vert discrepancies, compensate using CD Bias [[MLA150 - Design Guidelines#High-Resolution Writing|as described here]].''
  
Line 22: Line 24:
 
! width="125" |Exposure Dose (mJ/cm<sup>2</sup>)
 
! width="125" |Exposure Dose (mJ/cm<sup>2</sup>)
 
! width="100" |DeFocus
 
! width="100" |DeFocus
! width="75" |PEB
+
! width="75" |PEB*
 
! width="100" |Developer
 
! width="100" |Developer
 
! width="125" |Developer Time
 
! width="125" |Developer Time
Line 102: Line 104:
  
 
lower dose for clear-field, higher dose for dark-field.
 
lower dose for clear-field, higher dose for dark-field.
 +
|-
 +
| colspan="11" |*PEB: Post-exposure bake
 
|}
 
|}
  
=== Negative Resist (MLA150) ===
+
===Negative Resist (MLA150)===
 
''We found that all the negative PR's we tested required the 375nm in order to be fully exposed with reasonable dose/time.''
 
''We found that all the negative PR's we tested required the 375nm in order to be fully exposed with reasonable dose/time.''
  
Line 116: Line 120:
 
! width="125" |Exposure Dose (mJ/cm<sup>2</sup>)
 
! width="125" |Exposure Dose (mJ/cm<sup>2</sup>)
 
! width="100" |DeFocus
 
! width="100" |DeFocus
! width="75" |PEB
+
! width="75" |PEB*
! width="75" |Flood
+
! width="75" |Flood*
 
! width="100" |Developer
 
! width="100" |Developer
 
! width="125" |Developer Time
 
! width="125" |Developer Time
Line 160: Line 164:
 
|
 
|
 
|Extremely viscous. Pour into a wide-mouthed bottle, dispense directly from bottle. Replace napkin at end.
 
|Extremely viscous. Pour into a wide-mouthed bottle, dispense directly from bottle. Replace napkin at end.
 +
|-
 +
| colspan="12" |*PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal, and requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)|MA6]] or [[Suss Aligners (SUSS MJB-3)|MJB]] aligner afterwards, before developing.
 
|}
 
|}
  
=== Greyscale Lithography (MLA150) ===
+
===Greyscale Lithography (MLA150)===
 
''AZ4620 is the manufacturer-recommended PR for greyscale litho.''
 
''AZ4620 is the manufacturer-recommended PR for greyscale litho.''
 
{| class="wikitable" border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
 
{| class="wikitable" border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"

Latest revision as of 07:47, 1 July 2022

Maskless Aligner (Heidelberg MLA150)

Photolithography Recipes for the Heidelberg MLA150. All recipes were characterized on blank Silicon wafers. For different substrate coatings/materials, you will likely need to run a focus-exposure matrix ("series" exposure mode), using our params as a starting point.

These recipes use the same spin and bake params as our contact aligner and stepper recipes, using built-in hotplates on the photoresist spinner benches.

Any I-Line PR is usable, although we only characterized a select few below. Run your own Focus-Exposure Matrix to characterize a new PR.

Positive Resist (MLA150)

We found that positive PR's worked well with the 405nm laser - the 375nm laser would likely also work. Sub-micron features are possible. Overexposure is recommended to avoid stitching and horiz/vert discrepancies, compensate using CD Bias as described here.

Note: calibrations done with the "HIMT design" will show higher dose, due to using only dark-field line/space patterns.

Resist Spin Cond. Bake Thickness Laser (nm) Exposure Dose (mJ/cm2) DeFocus PEB* Developer Developer Time Comments
AZ4110 4 krpm, 30s 95°C, 60s ~ 1.1 µm 405 240 5 none AZ400K:DI 1:4 50s Used HIMT design (good for isolated lines 0.8-1um)
AZ4330 4 krpm, 30s 95°C, 60s ~ 3.3 µm 405 320 6 none AZ400K:DI 1:4 90s Used HIMT design
AZ4620
SPR 220-3.0 2.5 krpm, 30s 115°C, 90s ~ 2.7 µm 405 325 - 4 115°C, 90s AZ300MIF 60s Used HIMT design. 0.6-0.9µm line/space.
SPR 955-CM0.9 3 krpm, 30s 95°C, 90s ~ 0.9 µm 405 250 - 7 110°C, 90s AZ300MIF 60s Used HIMT design
THMR-3600HP 1.5 krpm, 45s;

250 rpm/s

100°C, 60s 0.430µm 405 180–220 -4 100°C, 60s AZ300MiF 20s ~0.4nm line/space:

lower dose for clear-field, higher dose for dark-field.

*PEB: Post-exposure bake

Negative Resist (MLA150)

We found that all the negative PR's we tested required the 375nm in order to be fully exposed with reasonable dose/time.

Resist Spin Cond. Bake Thickness Laser (nm) Exposure Dose (mJ/cm2) DeFocus PEB* Flood* Developer Developer Time Comments
AZ5214 6 krpm, 30s 95°C, 60s ~ 1.0 µm 375 35 - 5 110°C, 60s 60" AZ300MIF 60s Used UCSB design. Good for up to ~1.3um open line space.
AZnLOF2020 4 krpm, 30s 110°C, 60s ~ 2.1µm 375 340 - 3 110°C, 60s none AZ300MIF 90s Used UCSB design. Good for 2um open line space.
SU-8 2075 ~70µm 375 Extremely viscous. Pour into a wide-mouthed bottle, dispense directly from bottle. Replace napkin at end.
*PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal, and requires Flood Exposure with the MA6 or MJB aligner afterwards, before developing.

Greyscale Lithography (MLA150)

AZ4620 is the manufacturer-recommended PR for greyscale litho.

Resist Spin Cond. Bake Thickness Exposure Dose (mJ/cm2) Focus Offset PEB Flood Developer Developer Time Comments
AZ4620 ? krpm/30” 95°C, 60” 60" AZ300MIF 60s
  • TBD