Difference between revisions of "Direct-Write Lithography Recipes"

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(→‎Maskless Aligner (Heidelberg MLA150): link to Troubleshooting/OOFocus section)
 
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__TOC__
  
__TOC__
   
−
== [[Maskless Aligner (Heidelberg MLA150)]] ==
 +
==[[Maskless Aligner (Heidelberg MLA150)]]==
 
Photolithography Recipes for the [[Maskless Aligner (Heidelberg MLA150)|Heidelberg MLA150]]. All recipes were characterized on blank Silicon wafers. For different substrate coatings/materials, you will likely need to run a focus-exposure matrix ("series" exposure mode), using our params as a starting point.
  
Photolithography Recipes for the [[Maskless Aligner (Heidelberg MLA150)|Heidelberg MLA150]]. All recipes were characterized on blank Silicon wafers. For different substrate coatings/materials, you will likely need to run a focus-exposure matrix ("series" exposure mode), using our params as a starting point.
   
 
These recipes use the same spin and bake params as our contact aligner and stepper recipes, using built-in hotplates on the photoresist spinner benches.
  
These recipes use the same spin and bake params as our contact aligner and stepper recipes, using built-in hotplates on the photoresist spinner benches.
   
  +
'''''Any I-Line PR is usable''''', although we only characterized a select few below. Run your own Focus-Exposure Matrix to characterize a new PR.
⚫
=== Positive Resist (MLA150) ===
  
−
''We found that positive PR's worked well with the 405nm laser - the 375nm laser would likely also work.''
  
   
  +
'''<u>Note:</u>''' On this tool, it is common to have to run a Focus-Exposure Matrix (aka. FEM), via "''Series''" exposure mode, for each new layer structure and/or critical feature size. The layer structure can strongly affect the exposure parameters. See the [[ASML Stepper 3 Standard Operating Procedure#Tips for FEM analysis|FEM Analysis Tips page]] for how to choose the proper exposure parameters.
⚫
{| class="wikitable" border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
  
  +
  +
The [[MLA150 - Troubleshooting#Out Of Focus Exposures|'''MLA''' '''Troubleshooting > Out-of-Focus Exposures''']] section can help you avoid bad exposures, please read it!
  +
  ⚫
===Positive Resist (MLA150)===
  +
''We found that positive PR's worked well with the 405nm laser - the 375nm laser would likely also work. Sub-micron features are possible. Overexposure is recommended to avoid stitching and horiz/vert discrepancies; compensate for widening/narrowing using CD Bias [[MLA150 - Design Guidelines#High-Resolution Writing|as described here]].''
  +
  +
Note: calibrations done with the "HIMT design" will show higher dose, due to using only dark-field line/space patterns.
  +
  ⚫
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
 
|- bgcolor="#D0E7FF"
  
|- bgcolor="#D0E7FF"
 
! width="100" |Resist
  
! width="100" |Resist
Line 20: Line 28:
 
! width="125" |Exposure Dose (mJ/cm<sup>2</sup>)
  
! width="125" |Exposure Dose (mJ/cm<sup>2</sup>)
 
! width="100" |DeFocus
  
! width="100" |DeFocus
  +
!Rehydrate*
−
! width="75" |PEB
 +
! width="75" |PEB**
 
! width="100" |Developer
  
! width="100" |Developer
 
! width="125" |Developer Time
  
! width="125" |Developer Time
 
! width="300" |Comments
  
! width="300" |Comments
 
|-
  
|-
−
|[[:File:AXP4000pb-Datasheet.pdf|AZ4110]]
 +
|[[Media:AXP4000pb-Datasheet.pdf|AZ4110]]
−
|4 krpm/30s
 +
|4 krpm, 30s
−
|95°C/60s
 +
|95°C, 60s
 
|~ 1.1 µm
  
|~ 1.1 µm
 
|405
  
|405
 
|240
  
|240
 
|5
  
|5
  +
|
 
|''none''
  
|''none''
 
|AZ400K:DI 1:4
  
|AZ400K:DI 1:4
 
|50s
  
|50s
−
|Used MLA design (good for isolated lines 0.8-1um)
 +
|Used HIMT design (good for isolated lines 0.8-1um)
 
|-
  
|-
   
−
|[[:File:AXP4000pb-Datasheet.pdf|AZ4330]]
 +
|[[Media:AXP4000pb-Datasheet.pdf|AZ4330]]
−
|4 krpm/30s
 +
|4 krpm, 30s
−
|95°C/60s
 +
|95°C, 60s
 
|~ 3.3 µm
  
|~ 3.3 µm
 
|405
  
|405
 
|320
  
|320
 
|6
  
|6
  +
|
 
|''none''
  
|''none''
 
|AZ400K:DI 1:4
  
|AZ400K:DI 1:4
 
|90s
  
|90s
−
|Used MLA design
 +
|Used HIMT design
 
|-
  
|-
−
|[[:File:Az p4620 photoresist data package.pdf|AZ4620]]
 +
|[[Media:AXP4000pb-Datasheet.pdf|AZ4620]]
  +
|
 
|
  
|
 
|
  
|
Line 62: Line 74:
 
|
  
|
 
|-
  
|-
−
|[[:File:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-3.0]]
 +
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-3.0]]
−
|2.5 krpm/30s
 +
|2.5 krpm, 30s
−
|115°C/90”
 +
|115°C, 90s
 
|~ 2.7 µm
  
|~ 2.7 µm
 
|405
  
|405
 
|325
  
|325
 
| - 4
  
| - 4
  +
|
−
|115°C/90s
 +
|115°C, 90s
 
|AZ300MIF
  
|AZ300MIF
 
|60s
  
|60s
−
|Used MLA design
 +
|Used HIMT design. 0.6-0.9µm line/space.
  +
|-
  +
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]]
  +
|3.5 krpm, 30s
  ⚫
|105°C/2min
  +
Cool 1min
  +
|~ 7.0µm
  +
|375
  +
|~550mJ
  +
| -20
  +
|>1hr
  +
|115°C, 90s
  +
|AZ300MiF
  +
|70s
  +
|Rehydration after exposure is necessary, to prevent bubbles at PEB.
 
|-
  
|-
−
|[[:File:SPR955-Positive-Resist-Datasheet.pdf|SPR 955-CM0.9]]
 +
|[[Media:SPR955-Positive-Resist-Datasheet.pdf|SPR 955-CM0.9]]
−
|3 krpm/30s
 +
|3 krpm, 30s
−
|95°C/90”
 +
|95°C, 90s
 
|~ 0.9 µm
  
|~ 0.9 µm
 
|405
  
|405
 
|250
  
|250
 
| - 7
  
| - 7
  +
|
⚫
|110°C/90s
  
  +
|110°C, 90s
 
|AZ300MIF
  
|AZ300MIF
 
|60s
  
|60s
−
|Used MLA design
 +
|Used HIMT design
 
|-
  
|-
−
|[[:File:3600 D, D2v Spin Speed Curve.pdf|THMR-3600HP]]
 +
|[[Media:3600 D, D2v Spin Speed Curve.pdf|THMR-3600HP]]
−
|1.5 krpm/45s250 rpm/s
 +
|1.5 krpm, 45s;
  +
250 rpm/s
−
|100°C/60s
 +
|100°C, 60s
 
|0.430µm
  
|0.430µm
 
|405
  
|405
 
|180–220
  
|180–220
 
|<nowiki>-4</nowiki>
  
|<nowiki>-4</nowiki>
  +
|
−
|100°C/60s
 +
|100°C, 60s
 
|AZ300MiF
  
|AZ300MiF
 
|20s
  
|20s
Line 99: Line 129:
   
 
lower dose for clear-field, higher dose for dark-field.
  
lower dose for clear-field, higher dose for dark-field.
  +
|-
  +
| colspan="12" |*''Rehydration'': After exposure, leave sample in lab air (ok to cover in tray, with tinfoil). Allows water vapor in air to diffuse into PR to complete chemical reaction.
  +
<nowiki>**</nowiki>''PEB: Post-exposure bake'': after exposure, before develop
 
|}
  
|}
   
−
=== Negative Resist (MLA150) ===
 +
===Negative Resist (MLA150)===
−
''We found that all the negative PR's we tested required the 375nm in order to be fully exposure with reasonable dose.''
 +
''We found that all the negative PR's we tested required the 375nm in order to be fully exposed with reasonable dose/time.''
   
−
{| class="wikitable" border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
 +
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
 
|- bgcolor="#D0E7FF"
  
|- bgcolor="#D0E7FF"
 
! width="100" |Resist
  
! width="100" |Resist
Line 113: Line 146:
 
! width="125" |Exposure Dose (mJ/cm<sup>2</sup>)
  
! width="125" |Exposure Dose (mJ/cm<sup>2</sup>)
 
! width="100" |DeFocus
  
! width="100" |DeFocus
−
! width="75" |PEB
 +
! width="75" |PEB*
−
! width="75" |Flood
 +
! width="75" |Flood*
 
! width="100" |Developer
  
! width="100" |Developer
 
! width="125" |Developer Time
  
! width="125" |Developer Time
 
! width="300" |Comments
  
! width="300" |Comments
 
|-
  
|-
−
|[[:File:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]
 +
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]
−
|6 krpm/30s
 +
|6 krpm, 30s
−
|95°C/60s
 +
|95°C, 60s
 
|~ 1.0 µm
  
|~ 1.0 µm
 
|375
  
|375
 
|35
  
|35
 
| - 5
  
| - 5
−
|110°C/60s
 +
|110°C, 60s
 
|60"
  
|60"
 
|AZ300MIF
  
|AZ300MIF
Line 132: Line 165:
 
|Used UCSB design. Good for up to ~1.3um open line space.
  
|Used UCSB design. Good for up to ~1.3um open line space.
 
|-
  
|-
  +
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2020]]
−
|AZnLOF2020
  
−
|4 krpm/30s
 +
|4 krpm, 30s
−
|110°C/60s
 +
|110°C, 60s
 
|~ 2.1µm
  
|~ 2.1µm
 
|375
  
|375
 
|340
  
|340
 
| - 3
  
| - 3
−
|110°C/60s
 +
|110°C, 60s
 
|''none''
  
|''none''
 
|AZ300MIF
  
|AZ300MIF
Line 145: Line 178:
 
|Used UCSB design. Good for 2um open line space.
  
|Used UCSB design. Good for 2um open line space.
 
|-
  
|-
−
|[[:File:SU-8-2075-revA.pdf|SU-8 2075]]
 +
|[[Media:SU-8-2075-revA.pdf|SU-8 2075]]
 
|
  
|
 
|
  
|
Line 157: Line 190:
 
|
  
|
 
|Extremely viscous. Pour into a wide-mouthed bottle, dispense directly from bottle. Replace napkin at end.
  
|Extremely viscous. Pour into a wide-mouthed bottle, dispense directly from bottle. Replace napkin at end.
  +
|-
  +
| colspan="12" |*PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal, and requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)|MA6]] or [[Suss Aligners (SUSS MJB-3)|MJB]] aligner afterwards, before developing.
 
|}
  
|}
   
−
=== Greyscale Lithography (MLA150) ===
 +
===Greyscale Lithography (MLA150)===
 
''AZ4620 is the manufacturer-recommended PR for greyscale litho.''
  
''AZ4620 is the manufacturer-recommended PR for greyscale litho.''
  +
⚫
{| class="wikitable" border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
  
  +
Please see the [[MLA150 - Design Guidelines#Limitations%20.26%20Workarounds|'''MLA150 - Greyscale Design Guidelines & Limitation''']]
  ⚫
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
 
|- bgcolor="#D0E7FF"
  
|- bgcolor="#D0E7FF"
 
! width="100" |Resist
  
! width="100" |Resist
Line 167: Line 204:
 
! width="75" |Bake
  
! width="75" |Bake
 
! width="75" |Thickness
  
! width="75" |Thickness
  +
!Laser
 
! width="125" |Exposure Dose (mJ/cm<sup>2</sup>)
  
! width="125" |Exposure Dose (mJ/cm<sup>2</sup>)
 
! width="100" |Focus Offset
  
! width="100" |Focus Offset
  +
!Rehydrate*
−
! width="75" |PEB
  
−
! width="75" |Flood
 +
! width="75" |PEB**
 
! width="100" |Developer
  
! width="100" |Developer
 
! width="125" |Developer Time
  
! width="125" |Developer Time
  +
!Reflow***
 
! width="300" |Comments
  
! width="300" |Comments
 
|-
  
|-
  +
|[[Media:Az p4620 photoresist data package.pdf|AZ4620]]
−
|AZ4620
  
−
|– krpm/30”
 +
|? krpm/30”
−
|95°C/60”
 +
|95°C, 60”
  +
|
  +
|
 
|
  
|
 
|
  
|
 
|
  
|
 
|
  
|
−
|60"
  
 
|AZ300MIF
  
|AZ300MIF
−
|60"
 +
|60s
  +
|
 
| align="left" |
  
| align="left" |
−
*TBD
 +
*''TBD''
  +
|-
  +
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]]
  +
|3.5 krpm, 30s
  +
|105°C/2min
  +
Cool 1min
  +
|~ 7.0µm
  +
|375
  +
|~624mJ to clear large mm-area,
  +
520mJ to clear ~5µm lines.
  +
| -20
  +
|≥1hr
  +
|115°C, 90s
  +
|AZ300MiF
  +
|70s
  +
|TBD
  +
|Rehydration after exposure is necessary, to prevent bubbles at PEB.
  +
Stitching leaves ridges in Y-direction with ~5% height of removed PR depth. Can be reduced via reflow.
  +
  +
Author Credit: Patrick Curtis, 2022 & Biljana Stamenic 2023 & Demis D. John 2023
  +
|-
  +
| colspan="13" |*''Rehydration'': After exposure, leave sample in lab air (ok to cover in tray, with tinfoil). Allows water vapor in air to diffuse into PR to complete chemical reaction.
  +
<nowiki>**</nowiki>''PEB: Post-exposure bake'': after exposure, before develop
  +
  +
<nowiki>***</nowiki>''Reflow'': To smooth out stitching lines. Will change sharp vertical profiles considerably, only good for gradually-sloped profiles.
 
|}
  
|}

Latest revision as of 15:04, 20 March 2024

Maskless Aligner (Heidelberg MLA150)

Photolithography Recipes for the Heidelberg MLA150. All recipes were characterized on blank Silicon wafers. For different substrate coatings/materials, you will likely need to run a focus-exposure matrix ("series" exposure mode), using our params as a starting point.

These recipes use the same spin and bake params as our contact aligner and stepper recipes, using built-in hotplates on the photoresist spinner benches.

Any I-Line PR is usable, although we only characterized a select few below. Run your own Focus-Exposure Matrix to characterize a new PR.

Note: On this tool, it is common to have to run a Focus-Exposure Matrix (aka. FEM), via "Series" exposure mode, for each new layer structure and/or critical feature size. The layer structure can strongly affect the exposure parameters. See the FEM Analysis Tips page for how to choose the proper exposure parameters.

The MLA Troubleshooting > Out-of-Focus Exposures section can help you avoid bad exposures, please read it!

Positive Resist (MLA150)

We found that positive PR's worked well with the 405nm laser - the 375nm laser would likely also work. Sub-micron features are possible. Overexposure is recommended to avoid stitching and horiz/vert discrepancies; compensate for widening/narrowing using CD Bias as described here.

Note: calibrations done with the "HIMT design" will show higher dose, due to using only dark-field line/space patterns.

Resist Spin Cond. Bake Thickness Laser (nm) Exposure Dose (mJ/cm2) DeFocus Rehydrate* PEB** Developer Developer Time Comments
AZ4110 4 krpm, 30s 95°C, 60s ~ 1.1 µm 405 240 5 none AZ400K:DI 1:4 50s Used HIMT design (good for isolated lines 0.8-1um)
AZ4330 4 krpm, 30s 95°C, 60s ~ 3.3 µm 405 320 6 none AZ400K:DI 1:4 90s Used HIMT design
AZ4620
SPR 220-3.0 2.5 krpm, 30s 115°C, 90s ~ 2.7 µm 405 325 - 4 115°C, 90s AZ300MIF 60s Used HIMT design. 0.6-0.9µm line/space.
SPR 220-7.0 3.5 krpm, 30s 105°C/2min

Cool 1min

~ 7.0µm 375 ~550mJ -20 >1hr 115°C, 90s AZ300MiF 70s Rehydration after exposure is necessary, to prevent bubbles at PEB.
SPR 955-CM0.9 3 krpm, 30s 95°C, 90s ~ 0.9 µm 405 250 - 7 110°C, 90s AZ300MIF 60s Used HIMT design
THMR-3600HP 1.5 krpm, 45s;

250 rpm/s

100°C, 60s 0.430µm 405 180–220 -4 100°C, 60s AZ300MiF 20s ~0.4nm line/space:

lower dose for clear-field, higher dose for dark-field.

*Rehydration: After exposure, leave sample in lab air (ok to cover in tray, with tinfoil). Allows water vapor in air to diffuse into PR to complete chemical reaction.

**PEB: Post-exposure bake: after exposure, before develop

Negative Resist (MLA150)

We found that all the negative PR's we tested required the 375nm in order to be fully exposed with reasonable dose/time.

Resist Spin Cond. Bake Thickness Laser (nm) Exposure Dose (mJ/cm2) DeFocus PEB* Flood* Developer Developer Time Comments
AZ5214 6 krpm, 30s 95°C, 60s ~ 1.0 µm 375 35 - 5 110°C, 60s 60" AZ300MIF 60s Used UCSB design. Good for up to ~1.3um open line space.
AZnLOF2020 4 krpm, 30s 110°C, 60s ~ 2.1µm 375 340 - 3 110°C, 60s none AZ300MIF 90s Used UCSB design. Good for 2um open line space.
SU-8 2075 ~70µm 375 Extremely viscous. Pour into a wide-mouthed bottle, dispense directly from bottle. Replace napkin at end.
*PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal, and requires Flood Exposure with the MA6 or MJB aligner afterwards, before developing.

Greyscale Lithography (MLA150)

AZ4620 is the manufacturer-recommended PR for greyscale litho.

Please see the MLA150 - Greyscale Design Guidelines & Limitation

Resist Spin Cond. Bake Thickness Laser Exposure Dose (mJ/cm2) Focus Offset Rehydrate* PEB** Developer Developer Time Reflow*** Comments
AZ4620 ? krpm/30” 95°C, 60” AZ300MIF 60s
  • TBD
SPR 220-7.0 3.5 krpm, 30s 105°C/2min

Cool 1min

~ 7.0µm 375 ~624mJ to clear large mm-area,

520mJ to clear ~5µm lines.

-20 ≥1hr 115°C, 90s AZ300MiF 70s TBD Rehydration after exposure is necessary, to prevent bubbles at PEB.

Stitching leaves ridges in Y-direction with ~5% height of removed PR depth. Can be reduced via reflow.

Author Credit: Patrick Curtis, 2022 & Biljana Stamenic 2023 & Demis D. John 2023

*Rehydration: After exposure, leave sample in lab air (ok to cover in tray, with tinfoil). Allows water vapor in air to diffuse into PR to complete chemical reaction.

**PEB: Post-exposure bake: after exposure, before develop

***Reflow: To smooth out stitching lines. Will change sharp vertical profiles considerably, only good for gradually-sloped profiles.

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