Difference between revisions of "Direct-Write Lithography Recipes"
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[[category: Lithography]] |
[[category: Lithography]] |
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[[category: Recipes]] |
[[category: Recipes]] |
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− | {{WIP}} |
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__TOC__ |
__TOC__ |
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== [[Maskless Aligner (Heidelberg MLA150)]] == |
== [[Maskless Aligner (Heidelberg MLA150)]] == |
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− | Photolithography Recipes for the [[Maskless Aligner (Heidelberg MLA150)|Heidelberg MLA150]]. |
+ | Photolithography Recipes for the [[Maskless Aligner (Heidelberg MLA150)|Heidelberg MLA150]]. All recipes were characterized on blank Silicon wafers. For different substrate coatings/materials, you will likely need to run a focus-exposure matrix ("series" exposure mode), using our params as a starting point. |
+ | |||
+ | These recipes use the same spin and bake params as our contact aligner and stepper recipes, using built-in hotplates on the photoresist spinner benches. |
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+ | |||
+ | '''''Any I-Line PR is usable''''', although we only characterized a select few below. Run your own Focus-Exposure Matrix to characterize a new PR. |
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=== Positive Resist (MLA150) === |
=== Positive Resist (MLA150) === |
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+ | ''We found that positive PR's worked well with the 405nm laser - the 375nm laser would likely also work. Sub-micron features are possible. Overexposure is recommended to avoid stitching and horiz/vert discrepancies, compensate using CD Bias [[MLA150 - Design Guidelines#High-Resolution Writing|as described here]].'' |
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− | ''General notes: Hotplates used, filters, laser wavelengths, etc.'' |
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+ | |||
+ | Note: calibrations done with the "HIMT design" will show higher dose, due to using only dark-field line/space patterns. |
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{| class="wikitable" border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" |
{| class="wikitable" border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" |
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! width="75" |Thickness |
! width="75" |Thickness |
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!Laser (nm) |
!Laser (nm) |
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− | ! width="125" |Exposure |
+ | ! width="125" |Exposure Dose (mJ/cm<sup>2</sup>) |
! width="100" |DeFocus |
! width="100" |DeFocus |
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! width="75" |PEB |
! width="75" |PEB |
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|- |
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|[[:File:AXP4000pb-Datasheet.pdf|AZ4110]] |
|[[:File:AXP4000pb-Datasheet.pdf|AZ4110]] |
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− | |4 krpm |
+ | |4 krpm, 30s |
− | |95°C |
+ | |95°C, 60s |
|~ 1.1 µm |
|~ 1.1 µm |
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|405 |
|405 |
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Line 34: | Line 39: | ||
|AZ400K:DI 1:4 |
|AZ400K:DI 1:4 |
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|50s |
|50s |
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− | |Used |
+ | |Used HIMT design (good for isolated lines 0.8-1um) |
|- |
|- |
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|[[:File:AXP4000pb-Datasheet.pdf|AZ4330]] |
|[[:File:AXP4000pb-Datasheet.pdf|AZ4330]] |
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− | |4 krpm |
+ | |4 krpm, 30s |
− | |95°C |
+ | |95°C, 60s |
|~ 3.3 µm |
|~ 3.3 µm |
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|405 |
|405 |
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Line 47: | Line 52: | ||
|AZ400K:DI 1:4 |
|AZ400K:DI 1:4 |
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|90s |
|90s |
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− | |Used |
+ | |Used HIMT design |
|- |
|- |
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|[[:File:Az p4620 photoresist data package.pdf|AZ4620]] |
|[[:File:Az p4620 photoresist data package.pdf|AZ4620]] |
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Line 62: | Line 67: | ||
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|- |
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|[[:File:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-3.0]] |
|[[:File:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-3.0]] |
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− | |2.5 krpm |
+ | |2.5 krpm, 30s |
− | |115°C |
+ | |115°C, 90s |
|~ 2.7 µm |
|~ 2.7 µm |
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|405 |
|405 |
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− | | |
+ | |325 |
+ | | - 4 |
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⚫ | |||
− | |115°C |
+ | |115°C, 90s |
|AZ300MIF |
|AZ300MIF |
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|60s |
|60s |
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+ | |Used HIMT design. 0.6-0.9µm line/space. |
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− | | |
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|- |
|- |
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|[[:File:SPR955-Positive-Resist-Datasheet.pdf|SPR 955-CM0.9]] |
|[[:File:SPR955-Positive-Resist-Datasheet.pdf|SPR 955-CM0.9]] |
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− | |3 krpm |
+ | |3 krpm, 30s |
− | |95°C |
+ | |95°C, 90s |
|~ 0.9 µm |
|~ 0.9 µm |
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|405 |
|405 |
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|250 |
|250 |
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| - 7 |
| - 7 |
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− | |110°C |
+ | |110°C, 90s |
|AZ300MIF |
|AZ300MIF |
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|60s |
|60s |
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+ | |Used HIMT design |
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− | | align="left" | |
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− | |- |
+ | |- |
|[[:File:3600 D, D2v Spin Speed Curve.pdf|THMR-3600HP]] |
|[[:File:3600 D, D2v Spin Speed Curve.pdf|THMR-3600HP]] |
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+ | |1.5 krpm, 45s; |
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− | | |
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+ | 250 rpm/s |
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− | | |
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+ | |100°C, 60s |
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− | | |
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⚫ | |||
− | | |
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− | | |
+ | |405 |
+ | |180–220 |
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− | | |
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+ | |<nowiki>-4</nowiki> |
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− | | |
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+ | |100°C, 60s |
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− | | |
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+ | |AZ300MiF |
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− | | |
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− | | |
+ | |20s |
+ | |~0.4nm line/space: |
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+ | |||
+ | lower dose for clear-field, higher dose for dark-field. |
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|} |
|} |
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=== Negative Resist (MLA150) === |
=== Negative Resist (MLA150) === |
||
+ | ''We found that all the negative PR's we tested required the 375nm in order to be fully exposed with reasonable dose/time.'' |
||
− | ''General notes: Hotplates used, filters, laser wavelengths, etc.'' |
||
{| class="wikitable" border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" |
{| class="wikitable" border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" |
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Line 108: | Line 116: | ||
! width="75" |Thickness |
! width="75" |Thickness |
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!Laser (nm) |
!Laser (nm) |
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− | ! width="125" |Exposure |
+ | ! width="125" |Exposure Dose (mJ/cm<sup>2</sup>) |
! width="100" |DeFocus |
! width="100" |DeFocus |
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! width="75" |PEB |
! width="75" |PEB |
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Line 117: | Line 125: | ||
|- |
|- |
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|[[:File:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]] |
|[[:File:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]] |
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− | |6 krpm |
+ | |6 krpm, 30s |
− | |95°C |
+ | |95°C, 60s |
|~ 1.0 µm |
|~ 1.0 µm |
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− | | |
+ | |375 |
− | | |
+ | |35 |
+ | | - 5 |
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− | | |
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+ | |110°C, 60s |
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− | | |
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|60" |
|60" |
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|AZ300MIF |
|AZ300MIF |
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|60s |
|60s |
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+ | |Used UCSB design. Good for up to ~1.3um open line space. |
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− | | align="left" | |
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− | *??? |
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|- |
|- |
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|AZnLOF2020 |
|AZnLOF2020 |
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− | | |
+ | |4 krpm, 30s |
− | |110°C |
+ | |110°C, 60s |
|~ 2.1µm |
|~ 2.1µm |
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− | | |
+ | |375 |
− | | |
+ | |340 |
+ | | - 3 |
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− | | |
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+ | |110°C, 60s |
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− | | |
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|''none'' |
|''none'' |
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|AZ300MIF |
|AZ300MIF |
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− | | |
+ | |90s |
+ | |Used UCSB design. Good for 2um open line space. |
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− | | |
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|- |
|- |
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|[[:File:SU-8-2075-revA.pdf|SU-8 2075]] |
|[[:File:SU-8-2075-revA.pdf|SU-8 2075]] |
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=== Greyscale Lithography (MLA150) === |
=== Greyscale Lithography (MLA150) === |
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+ | ''AZ4620 is the manufacturer-recommended PR for greyscale litho.'' |
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− | ''Description...'' |
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{| class="wikitable" border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" |
{| class="wikitable" border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" |
||
|- bgcolor="#D0E7FF" |
|- bgcolor="#D0E7FF" |
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Line 165: | Line 172: | ||
! width="75" |Bake |
! width="75" |Bake |
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! width="75" |Thickness |
! width="75" |Thickness |
||
− | ! width="125" |Exposure |
+ | ! width="125" |Exposure Dose (mJ/cm<sup>2</sup>) |
! width="100" |Focus Offset |
! width="100" |Focus Offset |
||
! width="75" |PEB |
! width="75" |PEB |
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Line 173: | Line 180: | ||
! width="300" |Comments |
! width="300" |Comments |
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|- |
|- |
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+ | |[[:File:Az p4620 photoresist data package.pdf|AZ4620]] |
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− | |AZ4620Z5214 |
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− | | |
+ | |? krpm/30” |
− | |95°C |
+ | |95°C, 60” |
⚫ | |||
⚫ | |||
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Line 182: | Line 189: | ||
|60" |
|60" |
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|AZ300MIF |
|AZ300MIF |
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− | | |
+ | |60s |
| align="left" | |
| align="left" | |
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+ | *''TBD'' |
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− | *??? |
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|} |
|} |
Revision as of 12:35, 26 May 2021
Maskless Aligner (Heidelberg MLA150)
Photolithography Recipes for the Heidelberg MLA150. All recipes were characterized on blank Silicon wafers. For different substrate coatings/materials, you will likely need to run a focus-exposure matrix ("series" exposure mode), using our params as a starting point.
These recipes use the same spin and bake params as our contact aligner and stepper recipes, using built-in hotplates on the photoresist spinner benches.
Any I-Line PR is usable, although we only characterized a select few below. Run your own Focus-Exposure Matrix to characterize a new PR.
Positive Resist (MLA150)
We found that positive PR's worked well with the 405nm laser - the 375nm laser would likely also work. Sub-micron features are possible. Overexposure is recommended to avoid stitching and horiz/vert discrepancies, compensate using CD Bias as described here.
Note: calibrations done with the "HIMT design" will show higher dose, due to using only dark-field line/space patterns.
Resist | Spin Cond. | Bake | Thickness | Laser (nm) | Exposure Dose (mJ/cm2) | DeFocus | PEB | Developer | Developer Time | Comments |
---|---|---|---|---|---|---|---|---|---|---|
AZ4110 | 4 krpm, 30s | 95°C, 60s | ~ 1.1 µm | 405 | 240 | 5 | none | AZ400K:DI 1:4 | 50s | Used HIMT design (good for isolated lines 0.8-1um) |
AZ4330 | 4 krpm, 30s | 95°C, 60s | ~ 3.3 µm | 405 | 320 | 6 | none | AZ400K:DI 1:4 | 90s | Used HIMT design |
AZ4620 | ||||||||||
SPR 220-3.0 | 2.5 krpm, 30s | 115°C, 90s | ~ 2.7 µm | 405 | 325 | - 4 | 115°C, 90s | AZ300MIF | 60s | Used HIMT design. 0.6-0.9µm line/space. |
SPR 955-CM0.9 | 3 krpm, 30s | 95°C, 90s | ~ 0.9 µm | 405 | 250 | - 7 | 110°C, 90s | AZ300MIF | 60s | Used HIMT design |
THMR-3600HP | 1.5 krpm, 45s;
250 rpm/s |
100°C, 60s | 0.430µm | 405 | 180–220 | -4 | 100°C, 60s | AZ300MiF | 20s | ~0.4nm line/space:
lower dose for clear-field, higher dose for dark-field. |
Negative Resist (MLA150)
We found that all the negative PR's we tested required the 375nm in order to be fully exposed with reasonable dose/time.
Resist | Spin Cond. | Bake | Thickness | Laser (nm) | Exposure Dose (mJ/cm2) | DeFocus | PEB | Flood | Developer | Developer Time | Comments |
---|---|---|---|---|---|---|---|---|---|---|---|
AZ5214 | 6 krpm, 30s | 95°C, 60s | ~ 1.0 µm | 375 | 35 | - 5 | 110°C, 60s | 60" | AZ300MIF | 60s | Used UCSB design. Good for up to ~1.3um open line space. |
AZnLOF2020 | 4 krpm, 30s | 110°C, 60s | ~ 2.1µm | 375 | 340 | - 3 | 110°C, 60s | none | AZ300MIF | 90s | Used UCSB design. Good for 2um open line space. |
SU-8 2075 | ~70µm | 375 | Extremely viscous. Pour into a wide-mouthed bottle, dispense directly from bottle. Replace napkin at end. |
Greyscale Lithography (MLA150)
AZ4620 is the manufacturer-recommended PR for greyscale litho.
Resist | Spin Cond. | Bake | Thickness | Exposure Dose (mJ/cm2) | Focus Offset | PEB | Flood | Developer | Developer Time | Comments |
---|---|---|---|---|---|---|---|---|---|---|
AZ4620 | ? krpm/30” | 95°C, 60” | 60" | AZ300MIF | 60s |
|