Difference between revisions of "Direct-Write Lithography Recipes"

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(→‎Maskless Aligner (Heidelberg MLA150): mention that any I-Line PR will work.)
 
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[[category: Lithography]]
 
[[category: Lithography]]
 
[[category: Recipes]]
 
[[category: Recipes]]
{{WIP}}
 
 
__TOC__
 
__TOC__
  
 
== [[Maskless Aligner (Heidelberg MLA150)]] ==
 
== [[Maskless Aligner (Heidelberg MLA150)]] ==
Photolithography Recipes for the [[Maskless Aligner (Heidelberg MLA150)|Heidelberg MLA150]].  ''Description of litho params- different lasers available, greyscale etc.''
+
Photolithography Recipes for the [[Maskless Aligner (Heidelberg MLA150)|Heidelberg MLA150]].  All recipes were characterized on blank Silicon wafers. For different substrate coatings/materials, you will likely need to run a focus-exposure matrix ("series" exposure mode), using our params as a starting point.
 +
 
 +
These recipes use the same spin and bake params as our contact aligner and stepper recipes, using built-in hotplates on the photoresist spinner benches.
 +
 
 +
'''''Any I-Line PR is usable''''', although we only characterized a select few below.  Run your own Focus-Exposure Matrix to characterize a new PR.
  
 
=== Positive Resist (MLA150) ===
 
=== Positive Resist (MLA150) ===
''General notes: Hotplates used, filters, laser wavelengths, etc.''
+
''We found that positive PR's worked well with the 405nm laser - the 375nm laser would likely also work. Sub-micron features are possible.  Overexposure is recommended to avoid stitching and horiz/vert discrepancies, compensate using CD Bias [[MLA150 - Design Guidelines#High-Resolution Writing|as described here]].''
 +
 
 +
Note: calibrations done with the "HIMT design" will show higher dose, due to using only dark-field line/space patterns.
  
 
{| class="wikitable" border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
 
{| class="wikitable" border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
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! width="75" |Thickness
 
! width="75" |Thickness
 
!Laser (nm)
 
!Laser (nm)
! width="125" |Exposure Time|
+
! width="125" |Exposure Dose (mJ/cm<sup>2</sup>)
 
! width="100" |DeFocus
 
! width="100" |DeFocus
 
! width="75" |PEB
 
! width="75" |PEB
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|-
 
|-
 
|[[:File:AXP4000pb-Datasheet.pdf|AZ4110]]
 
|[[:File:AXP4000pb-Datasheet.pdf|AZ4110]]
|4 krpm/30s
+
|4 krpm, 30s
|95°C/60s
+
|95°C, 60s
 
|~ 1.1 µm
 
|~ 1.1 µm
 
|405
 
|405
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|AZ400K:DI 1:4
 
|AZ400K:DI 1:4
 
|50s
 
|50s
|Used MLA design (good for isolated lines 0.8-1um)
+
|Used HIMT design (good for isolated lines 0.8-1um)
 
|-
 
|-
  
 
|[[:File:AXP4000pb-Datasheet.pdf|AZ4330]]
 
|[[:File:AXP4000pb-Datasheet.pdf|AZ4330]]
|4 krpm/30s
+
|4 krpm, 30s
|95°C/60s
+
|95°C, 60s
 
|~ 3.3 µm
 
|~ 3.3 µm
 
|405
 
|405
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|AZ400K:DI 1:4
 
|AZ400K:DI 1:4
 
|90s
 
|90s
|Used MLA design
+
|Used HIMT design
 
|-
 
|-
 
|[[:File:Az p4620 photoresist data package.pdf|AZ4620]]
 
|[[:File:Az p4620 photoresist data package.pdf|AZ4620]]
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|-
 
|-
 
|[[:File:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-3.0]]
 
|[[:File:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-3.0]]
|2.5 krpm/30s
+
|2.5 krpm, 30s
|115°C/90”
+
|115°C, 90s
 
|~ 2.7 µm
 
|~ 2.7 µm
 
|405
 
|405
|
+
|325
|
+
| - 4
|115°C/90s
+
|115°C, 90s
 
|AZ300MIF
 
|AZ300MIF
 
|60s
 
|60s
|
+
|Used HIMT design. 0.6-0.9µm line/space.
 
|-
 
|-
 
|[[:File:SPR955-Positive-Resist-Datasheet.pdf|SPR 955-CM0.9]]
 
|[[:File:SPR955-Positive-Resist-Datasheet.pdf|SPR 955-CM0.9]]
|3 krpm/30s
+
|3 krpm, 30s
|95°C/60”
+
|95°C, 90s
 
|~ 0.9 µm
 
|~ 0.9 µm
 
|405
 
|405
|
+
|250
|
+
| - 7
|110°C/60s
+
|110°C, 90s
 
|AZ300MIF
 
|AZ300MIF
 
|60s
 
|60s
| align="left" |
+
|Used HIMT design
 
|-
 
|-
 
|[[:File:3600 D, D2v Spin Speed Curve.pdf|THMR-3600HP]]
 
|[[:File:3600 D, D2v Spin Speed Curve.pdf|THMR-3600HP]]
|
+
|1.5 krpm, 45s;
|
+
250 rpm/s
|
+
|100°C, 60s
|
+
|0.430µm
|
+
|405
|
+
|180–220
|
+
|<nowiki>-4</nowiki>
|
+
|100°C, 60s
|
+
|AZ300MiF
|
+
|20s
 +
|~0.4nm line/space:
 +
 
 +
lower dose for clear-field, higher dose for dark-field.
 
|}
 
|}
  
 
=== Negative Resist (MLA150) ===
 
=== Negative Resist (MLA150) ===
''General notes: Hotplates used, filters, laser wavelengths, etc.''
+
''We found that all the negative PR's we tested required the 375nm in order to be fully exposed with reasonable dose/time.''
  
 
{| class="wikitable" border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
 
{| class="wikitable" border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
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! width="75" |Thickness
 
! width="75" |Thickness
 
!Laser (nm)
 
!Laser (nm)
! width="125" |Exposure Time
+
! width="125" |Exposure Dose (mJ/cm<sup>2</sup>)
 
! width="100" |DeFocus
 
! width="100" |DeFocus
 
! width="75" |PEB
 
! width="75" |PEB
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|-
 
|-
 
|[[:File:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]
 
|[[:File:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]
|6 krpm/30s
+
|6 krpm, 30s
|95°C/60s
+
|95°C, 60s
 
|~ 1.0 µm
 
|~ 1.0 µm
|405
+
|375
|
+
|35
|
+
| - 5
|
+
|110°C, 60s
 
|60"
 
|60"
 
|AZ300MIF
 
|AZ300MIF
 
|60s
 
|60s
| align="left" |
+
|Used UCSB design. Good for up to ~1.3um open line space.
*???
 
 
|-
 
|-
 
|AZnLOF2020
 
|AZnLOF2020
|3 krpm/30s
+
|4 krpm, 30s
|110°C/90s
+
|110°C, 60s
 
|~ 2.1µm
 
|~ 2.1µm
|405
+
|375
|
+
|340
|
+
| - 3
|
+
|110°C, 60s
 
|''none''
 
|''none''
 
|AZ300MIF
 
|AZ300MIF
|60s
+
|90s
|
+
|Used UCSB design. Good for 2um open line space.
 
|-
 
|-
 
|[[:File:SU-8-2075-revA.pdf|SU-8 2075]]
 
|[[:File:SU-8-2075-revA.pdf|SU-8 2075]]
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=== Greyscale Lithography (MLA150) ===
 
=== Greyscale Lithography (MLA150) ===
''Description...''
+
''AZ4620 is the manufacturer-recommended PR for greyscale litho.''
 
{| class="wikitable" border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
 
{| class="wikitable" border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
 
|- bgcolor="#D0E7FF"
 
|- bgcolor="#D0E7FF"
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! width="75" |Bake
 
! width="75" |Bake
 
! width="75" |Thickness
 
! width="75" |Thickness
! width="125" |Exposure Time
+
! width="125" |Exposure Dose (mJ/cm<sup>2</sup>)
 
! width="100" |Focus Offset
 
! width="100" |Focus Offset
 
! width="75" |PEB
 
! width="75" |PEB
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! width="300" |Comments
 
! width="300" |Comments
 
|-
 
|-
|AZ4620Z5214
+
|[[:File:Az p4620 photoresist data package.pdf|AZ4620]]
|?? krpm/30”
+
|? krpm/30”
|95°C/60”
+
|95°C, 60”
|?? µm
+
|
 
|
 
|
 
|
 
|
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|60"
 
|60"
 
|AZ300MIF
 
|AZ300MIF
|60"
+
|60s
 
| align="left" |
 
| align="left" |
*???
+
*''TBD''
 
|}
 
|}

Latest revision as of 12:35, 26 May 2021

Maskless Aligner (Heidelberg MLA150)

Photolithography Recipes for the Heidelberg MLA150. All recipes were characterized on blank Silicon wafers. For different substrate coatings/materials, you will likely need to run a focus-exposure matrix ("series" exposure mode), using our params as a starting point.

These recipes use the same spin and bake params as our contact aligner and stepper recipes, using built-in hotplates on the photoresist spinner benches.

Any I-Line PR is usable, although we only characterized a select few below. Run your own Focus-Exposure Matrix to characterize a new PR.

Positive Resist (MLA150)

We found that positive PR's worked well with the 405nm laser - the 375nm laser would likely also work. Sub-micron features are possible. Overexposure is recommended to avoid stitching and horiz/vert discrepancies, compensate using CD Bias as described here.

Note: calibrations done with the "HIMT design" will show higher dose, due to using only dark-field line/space patterns.

Resist Spin Cond. Bake Thickness Laser (nm) Exposure Dose (mJ/cm2) DeFocus PEB Developer Developer Time Comments
AZ4110 4 krpm, 30s 95°C, 60s ~ 1.1 µm 405 240 5 none AZ400K:DI 1:4 50s Used HIMT design (good for isolated lines 0.8-1um)
AZ4330 4 krpm, 30s 95°C, 60s ~ 3.3 µm 405 320 6 none AZ400K:DI 1:4 90s Used HIMT design
AZ4620
SPR 220-3.0 2.5 krpm, 30s 115°C, 90s ~ 2.7 µm 405 325 - 4 115°C, 90s AZ300MIF 60s Used HIMT design. 0.6-0.9µm line/space.
SPR 955-CM0.9 3 krpm, 30s 95°C, 90s ~ 0.9 µm 405 250 - 7 110°C, 90s AZ300MIF 60s Used HIMT design
THMR-3600HP 1.5 krpm, 45s;

250 rpm/s

100°C, 60s 0.430µm 405 180–220 -4 100°C, 60s AZ300MiF 20s ~0.4nm line/space:

lower dose for clear-field, higher dose for dark-field.

Negative Resist (MLA150)

We found that all the negative PR's we tested required the 375nm in order to be fully exposed with reasonable dose/time.

Resist Spin Cond. Bake Thickness Laser (nm) Exposure Dose (mJ/cm2) DeFocus PEB Flood Developer Developer Time Comments
AZ5214 6 krpm, 30s 95°C, 60s ~ 1.0 µm 375 35 - 5 110°C, 60s 60" AZ300MIF 60s Used UCSB design. Good for up to ~1.3um open line space.
AZnLOF2020 4 krpm, 30s 110°C, 60s ~ 2.1µm 375 340 - 3 110°C, 60s none AZ300MIF 90s Used UCSB design. Good for 2um open line space.
SU-8 2075 ~70µm 375 Extremely viscous. Pour into a wide-mouthed bottle, dispense directly from bottle. Replace napkin at end.

Greyscale Lithography (MLA150)

AZ4620 is the manufacturer-recommended PR for greyscale litho.

Resist Spin Cond. Bake Thickness Exposure Dose (mJ/cm2) Focus Offset PEB Flood Developer Developer Time Comments
AZ4620 ? krpm/30” 95°C, 60” 60" AZ300MIF 60s
  • TBD