Difference between revisions of "Deposition Data - temporary 2021-12-15"
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==SiO<sub>2</sub> deposition (IBD)== |
==SiO<sub>2</sub> deposition (IBD)== |
||
| − | * |
+ | *[https://wiki.nanotech.ucsb.edu/wiki/images/8/8d/New_IBD_SiO2_Standard_Recipe.pdf SiO<sub>2</sub><nowiki> [IBD] Standard Recipe</nowiki>] - "''1_SiO2_dep''" |
| − | * |
+ | *[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=0 SiO<sub>2</sub><nowiki> [IBD] Current Process Control Data</nowiki>] |
| − | * |
+ | *[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=700537698 SiO<sub>2</sub><nowiki> [IBD] Historical Data</nowiki>] - Before Oct. 2021 |
| − | ==== |
+ | ====SiO<sub>2</sub> Thin-Film Properties (IBD)==== |
| − | * |
+ | *Dep.rate: ≈ 5.2 nm/min (users must calibrate this prior to critical deps) |
| − | * |
+ | *HF Etch Rate ~350 nm/min |
| − | * |
+ | *Stress ≈ -390MPa (compressive) |
| − | * |
+ | *Refractive Index: ≈ 1.494 |
| − | * |
+ | *[[wikipedia:Cauchy's_equation|Cauchy Parameters]] (350-2000nm): |
| − | ** |
+ | **A = 1.480 |
| − | ** |
+ | **B = 0.00498 |
| − | ** |
+ | **C = -3.2606e-5 |
==Si<sub>3</sub>N<sub>4</sub> deposition (IBD)== |
==Si<sub>3</sub>N<sub>4</sub> deposition (IBD)== |
||
| − | * |
+ | *[https://wiki.nanotech.ucsb.edu/wiki/images/d/d3/IBD_SiNdeposition.pdf Si<sub>3</sub>N<sub>4</sub><nowiki> [IBD] Standard Recipe</nowiki>] - "''1_Si3N4_Dep''" |
| − | * |
+ | *[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=971672318 Si<sub>3</sub>N<sub>4</sub><nowiki> [IBD] Current Process Control Data</nowiki>] |
| − | * |
+ | *[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=2093120876 Si<sub>3</sub>N<sub>4</sub><nowiki> [IBD] Historical Data</nowiki>] - before Oct. 2021 |
| − | === |
+ | ===Si<sub>3</sub>N<sub>4</sub> Thin-Film Properties (IBD)=== |
| − | * |
+ | *Deposition Rate: ≈ 4.10 nm/min (users must calibrate this prior to critical deps) |
| − | * |
+ | *HF Etch Rate: ~11nm/min |
| − | * |
+ | *Stress ≈ -1590MPa (compressive) |
| − | * |
+ | *Refractive Index: ≈ 1.969 |
| − | * |
+ | *[[wikipedia:Cauchy's_equation|Cauchy Parameters]] (350-2000nm): |
| − | ** |
+ | **A = 2.000 |
| − | ** |
+ | **B = 0.01974 |
| − | ** |
+ | **C = 1.2478e-4 |
==Ta<sub>2</sub>O<sub>5</sub> deposition (IBD)== |
==Ta<sub>2</sub>O<sub>5</sub> deposition (IBD)== |
||
| − | * |
+ | *[https://wiki.nanotech.ucsb.edu/wiki/images/8/85/IBD_Ta2O5_deposition_details.pdf Ta<sub>2</sub>O<sub>5</sub><nowiki> [IBD] Standard Recipe</nowiki>] - "''1_Ta2O5_dep''" |
| − | * |
+ | *[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=855566098 Ta<sub>2</sub>O<sub>5</sub><nowiki> [IBD] Current Process Control Data</nowiki>] |
| − | * |
+ | *[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=1075234846 Ta<sub>2</sub>O<sub>5</sub><nowiki> [IBD] Historical Data</nowiki>] - before Oct. 2021 |
| − | ==== |
+ | ====Ta2O5 Thin-Film Properies (IBD)==== |
| − | * |
+ | *Ta2O5 1hr depositions: |
| − | * |
+ | *Deposition Rate: ≈ 7.8 nm/min (users must calibrate this prior to critical deps) |
| − | * |
+ | *HF Etch Rate ≈ 2 nm/min |
| − | * |
+ | *Stress ≈ -232MPa (compressive) |
| − | * |
+ | *Refractive Index: ≈ 2.172 |
| − | * |
+ | *[[wikipedia:Cauchy's_equation|Cauchy Parameters]] (350-2000nm): |
| − | ** |
+ | **A = 2.1123 |
| − | ** |
+ | **B = 0.018901 |
| − | ** |
+ | **C = -0.016222 |
==Al<sub>2</sub>O<sub>3</sub> deposition (IBD)== |
==Al<sub>2</sub>O<sub>3</sub> deposition (IBD)== |
||
| − | * |
+ | *Al<sub>2</sub>O<sub>3</sub> [IBD] Standard Recipe - "''1_Al2O3_dep''" |
| − | * |
+ | *[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=713133870 Al<sub>2</sub>O<sub>3</sub><nowiki> [IBD] Present Data</nowiki>] |
| − | * |
+ | *[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=1294329492 Al<sub>2</sub>O<sub>3</sub><nowiki> [IBD] Historical Data</nowiki>] |
| − | === |
+ | ===Al2O3 Thin-Film Properties (IBD)=== |
| − | ** |
+ | **Deposition Rate ≈ 2.05nm/min (users must calibrate this prior to critical deps) |
| − | ** |
+ | **HF etch rate ≈ 167nm/min |
| − | ** |
+ | **Stress ≈ -332MPa (compressive) |
| − | ** |
+ | **Refractive Index: ≈ 1.656 |
| − | ** |
+ | **[[wikipedia:Cauchy's_equation|Cauchy Parameters]] (350-2000nm): |
| − | *** |
+ | ***A = ''To Be Added'' |
| − | *** |
+ | ***B = |
| − | *** |
+ | ***C = |
| − | ** |
+ | **Absorbing < ~350nm |
==TiO<sub>2</sub> deposition (IBD)== |
==TiO<sub>2</sub> deposition (IBD)== |
||
| − | * |
+ | *[https://wiki.nanotech.ucsb.edu/wiki/images/3/3b/New_IBD_TiO2_deposition.pdf TiO<sub>2</sub><nowiki> [IBD] Standard Recipe</nowiki>] - "''1_TiO2_dep''" |
| − | * |
+ | *[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=834404663 TiO<sub>2</sub><nowiki> [IBD] Current Process Control Data</nowiki>] |
| − | * |
+ | *[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=1327808550 TiO<sub>2</sub><nowiki> [IBD] Historical Data</nowiki>] |
| − | === |
+ | ===TiO<sub>2</sub> Thin-Film Properties (IBD)=== |
| − | * |
+ | *Deposition Rate: ≈ 1.29 nm/min (users must calibrate this prior to critical deps) |
| − | * |
+ | *HF etch rate ~5.34nm/min |
| − | * |
+ | *Stress ≈ -445MPa (compressive) |
| − | * |
+ | *Refractive Index: ≈ 2.259 |
| − | * |
+ | *[[wikipedia:Cauchy's_equation|Cauchy Parameters]] (350-2000nm): |
| − | ** |
+ | **A = 2.435 |
| − | ** |
+ | **B = -4.9045e-4 |
| − | ** |
+ | **C = 0.01309 |
| − | * |
+ | *Absorbing < ~350nm wavelength |
| + | ===SiO<sub>x</sub>N<sub>y</sub> deposition (IBD)=== |
||
| ⚫ | |||
| + | These are some old (2010), initial characterizations only. A recipe improvement would be to increase the Assist O2+N2 = 60sccm total, increasing repeatability. Contact [[Demis D. John|Demis]] for more info. |
||
| − | You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details. |
||
| + | {| |
||
| + | ![[File:IBD SiON Index @ 623nm vs. O2 Gas Flow - v3 - wiki.jpg|alt=plot showing varying refractive index between Si3N4 and SiO2|none|thumb|250x250px|IBD SiO<sub>x</sub>N<sub>y</sub>: Refractive Index vs. O2/N2 Flow.]] |
||
| + | ![[File:IBD SiON - Dep rate vs O2 flow - wiki.png|alt=Rate varies monotonically from 53-5 Å/min.|none|thumb|Dep. Rate of IBD SiO<sub>x</sub>N<sub>y</sub> vs. Assist O<sub>2</sub> flow.]] |
||
| + | |} |
||
| ⚫ | |||
| − | *SiNx etches at 20nm/min |
||
| + | You must edit the "''#_GridClean''"("#" is your group number) steps in your Process according to the following times: |
||
| − | *SiO<sub>2</sub> etches at 40nm/min |
||
| + | *5min GridClean for 1hr or less deposition |
||
| ⚫ | |||
| + | *10min GridClean for up to 2hrs of dep. |
||
| + | *Do not deposit for longer than 2hrs - instead break up your Process into multiple 2-hr subroutines with cleans in between. See the recipe "''1_SiO2_Dep_Multi''" for an example. |
||
| ⚫ | |||
| + | ''To Be Added'' |
||
Latest revision as of 00:07, 16 December 2021
NEW data templates - Demis 2021-12-15
Back to Vacuum Deposition Recipes
PECVD 1 (PlasmaTherm 790)
PECVD 1 Plots - SiO2, SiN and Particulate Count
SiO2 deposition (PECVD #1)
- SiO2 [PECVD 1] Standard Recipe
- SiO2 [PECVD 1] Current Process Control Data
- SiO2 [PECVD 1] Historical Data - Oct. 2021 and earlier
SiN deposition (PECVD #1)
- Si3N4 [PECVD 1] Standard Recipe
- Si3N4 [PECVD 1] Current Process Control Data
- Si3N4 [PECVD 1] Historical Data - Oct. 2021 and earlier
Low Stress Si3N4 (PECVD#1)
- Low Stress Si3N4 [PECVD 1] Standard Recipe
- Low Stress Si3N4 [PECVD 1] Current Process Control Data
- Low Stress Si3N4 [PECVD 1] Historical Data - 2021-10 and earlier
SiOxNy deposition (PECVD #1)
Standard Cleaning Procedure (PECVD #1)
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:
- Wet cleaning (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
- Load the recipe for cleaning "CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding a required time for cleaning.
| Film Dep'd | Cleaning Time |
|---|---|
| SiO2 | TBD |
| Si3N4 | TBD |
| SiOxNy | Same as XYZ |
Standard Cleaning Recipe (PECVD#1): "CF4/O2 Clean"
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.
PECVD 2 (Advanced Vacuum)
PECVD 2 Plots
SiO2 deposition (PECVD #2)
- SiO2 [PECVD 2] Standard Recipe - "STD SiO2"
- SiO2 [PECVD 2] Current Process Control Data
- SiO2 [PECVD 2] Historical Data - Before Oct. 2021
SiN deposition (PECVD #2)
- Si3N4 [PECVD 2] Standard Recipe - "Nitride2"
- Si3N4 [PECVD 2] Current Process Control Data
- Si3N4 [PECVD 2] Historical Data - Before Oct. 2021
Low-Stress SiN deposition (PECVD #2)
Low-Stress SilIcon Nitride, Si3N4 (< 100 MPa)
- Low Stress Si3N4 [PECVD 2] Standard Recipe - "LSNitride2"
- Old Versions of the recipe:
- Low Stress Si3N4 [PECVD 2] Current Process Control Data
- Low Stress Si3N4 [PECVD 2] Historical Data - Before Oct. 2021
Amorphous-Si deposition (PECVD #2)
Standard Cleaning Procedure (PECVD #2)
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:
- (If >29min dep time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again.
- Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.
Standard Clean Recipe (PECVD#2): "STD CF4/O2 Clean"
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.
Clean Times (PECVD#2)
| Film Deposited | Cleaning Time (Dry) |
|---|---|
| SiO2 | 1 min. clean for every 1 min. deposition |
| Si3N4 | 1 min. clean for every 7 min of deposition |
| If > 29min total dep time
(Season + Dep) |
Wet Clean the Upper Lid/Chamber
DI water then Isopropyl Alcohol on chamber wall & portholes |
ICP-PECVD (Unaxis VLR)
2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the new procedures to ensure low particle counts in the chamber.
The system currently has Deuterated Silane (SiD4) installed - identical to the regular Silicon precursor SiH4, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights.
ICP-PECVD Plots - TBD
Low Deposition Rate SiO2 [ICP-PECVD]
- Low Deposition Rate SiO2 [ICP-PECVD] - Standard Recipe - "SiO2 LDR 250C"
- Low Deposition Rate SiO2 [ICP-PECVD] - Current Process Control Data
- Low Deposition Rate SiO2 [ICP-PECVD] - Historical Data - before Oct. 2021
High Deposition Rate SiO2 [ICP-PECVD]
- High Deposition Rate SiO2 [ICP-PECVD] Standard Recipe - "SiO2 HDR 250C"
- High Deposition Rate SiO2 [ICP-PECVD] Present Data
- High Deposition Rate SiO2 [ICP-PECVD] Historical Data
Si3N4 [ICP-PECVD]
- Si3N4 [ICP-PECVD] Standard Recipe - "SiN 250C"
- Si3N4 [ICP-PECVD] Current Process Control Data
- Si3N4 [ICP-PECVD] Historical Data - before Oct. 2021
Low Stress Si3N4 [ICP-PECVD]
- Low Stress Si3N4 [ICP-PECVD] Standard Recipe - "SiN Low Stress 250C"
- Low Stress Si3N4 [ICP-PECVD] Current Process Control Data
- Low Stress Si3N4 [ICP-PECVD] Historical Data - before Oct. 2021
Standard Cleaning Procedure [ICP-PECVD]
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the Operating Procedure on the Unaxis Tool Page for details.
- SiNx etches at 20nm/min
- SiO2 etches at 40nm/min
Standard Clean Recipe
To Be Added
Ion Beam Deposition (Veeco NEXUS)
Ion-Beam Assisted Deposition - high density reactive sputtering, with angled/rotating fixtures.
IBD Plots - To Be Added
SiO2 deposition (IBD)
- SiO2 [IBD] Standard Recipe - "1_SiO2_dep"
- SiO2 [IBD] Current Process Control Data
- SiO2 [IBD] Historical Data - Before Oct. 2021
SiO2 Thin-Film Properties (IBD)
- Dep.rate: ≈ 5.2 nm/min (users must calibrate this prior to critical deps)
- HF Etch Rate ~350 nm/min
- Stress ≈ -390MPa (compressive)
- Refractive Index: ≈ 1.494
- Cauchy Parameters (350-2000nm):
- A = 1.480
- B = 0.00498
- C = -3.2606e-5
Si3N4 deposition (IBD)
- Si3N4 [IBD] Standard Recipe - "1_Si3N4_Dep"
- Si3N4 [IBD] Current Process Control Data
- Si3N4 [IBD] Historical Data - before Oct. 2021
Si3N4 Thin-Film Properties (IBD)
- Deposition Rate: ≈ 4.10 nm/min (users must calibrate this prior to critical deps)
- HF Etch Rate: ~11nm/min
- Stress ≈ -1590MPa (compressive)
- Refractive Index: ≈ 1.969
- Cauchy Parameters (350-2000nm):
- A = 2.000
- B = 0.01974
- C = 1.2478e-4
Ta2O5 deposition (IBD)
- Ta2O5 [IBD] Standard Recipe - "1_Ta2O5_dep"
- Ta2O5 [IBD] Current Process Control Data
- Ta2O5 [IBD] Historical Data - before Oct. 2021
Ta2O5 Thin-Film Properies (IBD)
- Ta2O5 1hr depositions:
- Deposition Rate: ≈ 7.8 nm/min (users must calibrate this prior to critical deps)
- HF Etch Rate ≈ 2 nm/min
- Stress ≈ -232MPa (compressive)
- Refractive Index: ≈ 2.172
- Cauchy Parameters (350-2000nm):
- A = 2.1123
- B = 0.018901
- C = -0.016222
Al2O3 deposition (IBD)
- Al2O3 [IBD] Standard Recipe - "1_Al2O3_dep"
- Al2O3 [IBD] Present Data
- Al2O3 [IBD] Historical Data
Al2O3 Thin-Film Properties (IBD)
- Deposition Rate ≈ 2.05nm/min (users must calibrate this prior to critical deps)
- HF etch rate ≈ 167nm/min
- Stress ≈ -332MPa (compressive)
- Refractive Index: ≈ 1.656
- Cauchy Parameters (350-2000nm):
- A = To Be Added
- B =
- C =
- Absorbing < ~350nm
TiO2 deposition (IBD)
- TiO2 [IBD] Standard Recipe - "1_TiO2_dep"
- TiO2 [IBD] Current Process Control Data
- TiO2 [IBD] Historical Data
TiO2 Thin-Film Properties (IBD)
- Deposition Rate: ≈ 1.29 nm/min (users must calibrate this prior to critical deps)
- HF etch rate ~5.34nm/min
- Stress ≈ -445MPa (compressive)
- Refractive Index: ≈ 2.259
- Cauchy Parameters (350-2000nm):
- A = 2.435
- B = -4.9045e-4
- C = 0.01309
- Absorbing < ~350nm wavelength
SiOxNy deposition (IBD)
These are some old (2010), initial characterizations only. A recipe improvement would be to increase the Assist O2+N2 = 60sccm total, increasing repeatability. Contact Demis for more info.
Standard Cleaning Procedure (IBD)
You must edit the "#_GridClean"("#" is your group number) steps in your Process according to the following times:
- 5min GridClean for 1hr or less deposition
- 10min GridClean for up to 2hrs of dep.
- Do not deposit for longer than 2hrs - instead break up your Process into multiple 2-hr subroutines with cleans in between. See the recipe "1_SiO2_Dep_Multi" for an example.
Standard Grid-Clean Recipe
To Be Added