Difference between revisions of "Deposition Data - temporary 2021-12-15"

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'''NEW data templates - Demis 2021-12-15'''
   
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=OLD Data=
  
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Copied on 2021-12-14
  
   
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<big>Back to [[Vacuum Deposition Recipes]]</big>
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{{recipes|Vacuum Deposition}}
  
   
 
=[[PECVD 1 (PlasmaTherm 790)]]=
  
=[[PECVD 1 (PlasmaTherm 790)]]=
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====Historical Particulate Data====
  
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*[https://docs.google.com/spreadsheets/d/1a0XrY6HuJ6L9niThZYI-u4XH69Hnbe3jkm1qKmrR8Rg/edit#gid=sharing Particulates(Gain4) in PECVD#1-OLD DATA 2015]
  
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*[https://docs.google.com/spreadsheets/d/1ZfkspbCQZmdThC8qB4XyjsyPAzrMF1QbHSMFmH6xSo4/edit#gid=sharing Particulates(Gain4) in PECVD#1-OLD DATA 2016]
  
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*[https://docs.google.com/spreadsheets/d/1YNiof68Veeh08s_NtG5aCWUXW7GWDDU00HAimV_l8_g/edit#gid=sharing Particulates(Gain4) in PECVD#1-OLD DATA 2017]
  
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*[https://docs.google.com/spreadsheets/d/1VN551M2oXGWX306HDLQXvZIp3kgxEvWffQqMqnc8ISk/edit#gid=sharing Particulates in PECVD#1 films 2017]
  
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*[https://docs.google.com/spreadsheets/d/11c0gQHnattIjVO95aBqiL-zL4DInRFihV-YB54xLT40/edit#gid=sharing Particulates in PECVD#1 films 2018]
  
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*[https://docs.google.com/spreadsheets/d/1ct-SSCRxf81W0jupCWzh81n0DBwPv6mwKFMzuWu_0TI/edit#gid=sharing Particulates in PECVD#1 films 2019]
  
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*[https://docs.google.com/spreadsheets/d/1yks0OgH8rpbYjin_Qr8vpPg8jBiZQRs_PKfyfo-Rqg0/edit#gid=sharing Particulates in PECVD#1 films 2020]
  
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*[https://docs.google.com/spreadsheets/d/1vSmymaS_NNXW-ouC8Ky1J6iVSla7uyRB2zf1lGMa31g/edit#gid=sharing Particulates in PECVD#1 films 2021]
  
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==SiN deposition (PECVD #1)==
  
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*[https://docs.google.com/spreadsheets/d/1DGU745SeunYz4sLs1LpGKbtOYX-tQyBHEvVYcMxHRKE/edit#gid= Si3N4 Standard Recipe]
  
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====Historical Data====
  
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=====Thin-Film Properties=====
  
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*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEN6LV93LXlnbUhIWU1adVZWMWlXYnc&usp=drive_web#gid=sharing SiN 100nm Data 2014]
  
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*[https://docs.google.com/spreadsheets/d/1phx1WficlUEg0xSahaAq4zrRk6m9Eb0ausO8wcAmXqs/edit#gid=sharing SiN 100nm Data 2015]
  
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*[https://docs.google.com/spreadsheets/d/1VNSNTqnbE4SFk0HyhBAy3GJzi0jRQEs8cgk1v2_Uam8/edit#gid=sharing SiN 100nm Data 2016]
  
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*[https://docs.google.com/spreadsheets/d/1TG1X2wpl2fWaHEtAHtpZFBVSCk1BQeGJQ8LA2M2qBJ0/edit#gid=sharing SiN 100nm Data 2017]
  
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*[https://docs.google.com/spreadsheets/d/1UlyvPcXUBQ5R2JwjKOjELvtCJaTElVhJHfzgjyaRd2A/edit#gid=sharing SiN 300nm Data 2017]
  
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*[https://docs.google.com/spreadsheets/d/1pAoTCaNSf0uZMyiQ2qKFd0s_e4e53P9Z1jUwtmTnlLk/edit#gid=sharing SiN 300nm Data 2018]
  
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*[https://docs.google.com/spreadsheets/d/1Pnw8eEaQ0rGblRYl6LeIm6wrh1hgeyjnHEbA4BzV8JM/edit#gid=sharing SiN 300nm Data 2019]
  
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*[https://docs.google.com/spreadsheets/d/1N_1Kk6J-wA4nlHpFg5EMDZNHR1kLDo_fr_Dvc6osSr4/edit#gid=sharing SiN 300nm Data 2020]
  
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*[https://docs.google.com/spreadsheets/d/13jY5T_PW1a3GjHIbR0GuUbIhmxClQfvLgzaUtl3YniE/edit#gid=sharing SiN 300nm Data 2021]
  
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=====Uniformity Data=====
  
   
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===[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1270764394 PECVD 1 Plots] - SiO2, SiN and Particulate Count===
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*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dElmTXZyOEZsOFdrMVhNLWpKXzVmNWc&usp=sharing SiN 100 nm Thickness uniformity 2014]
  
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*[https://docs.google.com/spreadsheets/d/1-pET1Eojooso5UHk90W-5uYByDDdrCyRnggqewxTmVg/edit#gid=sharing SiN 100 nm Thickness uniformity 2015]
  
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*[https://docs.google.com/spreadsheets/d/1V_-KzsdR-2tSnJGtUdQWokmnNIY949t0vdQOp7RfCgc/edit#gid=sharing SiN 100 nm Thickness uniformity 2016]
  
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*[https://docs.google.com/spreadsheets/d/1tM-a4VBEqpxr2G8PGGLTbsR6BQBmvqXNRBw0mikAUS0/edit#gid=sharing SiN 100 nm Thickness uniformity 2017]
  
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*[https://docs.google.com/spreadsheets/d/1Z83RCH5cAUfViO6vv6hAatcLVWZ95ex4nDdfffm9I7s/edit#gid=sharing SiN 300nm Thickness uniformity 2017]
  
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*[https://docs.google.com/spreadsheets/d/1b4EQZdRtVbqNwGBrItoG5-tz6RIzlsvBiCFR6ZXfylw/edit#gid=sharing SiN 300nm Thickness uniformity 2018]
  
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*[https://docs.google.com/spreadsheets/d/1-OiaH8frAzJzHKfbYTJP808ddzk1Wsv_CixDzG-sSfo/edit#gid=sharing SiN 300nm Thickness uniformity 2019]
  
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*[https://docs.google.com/spreadsheets/d/1e5ycwODa-VooEzGjhY4XquvJpuAuIQHHHZSRwZaH5-E/edit#gid=sharing SiN 300nm Thickness uniformity 2020]
  
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*[https://docs.google.com/spreadsheets/d/1Re5xwB5WMgsgDHsi_0dUeL62uWAnqDQtoBoaR7lj8cI/edit#gid=sharing SiN 300nm Thickness uniformity 2021]
  
   
 
==SiO<sub>2</sub> deposition (PECVD #1)==
  
==SiO<sub>2</sub> deposition (PECVD #1)==
   
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*[https://docs.google.com/spreadsheets/d/1uqpg3sirsRbXdTFlxZ6_k3t0ovP0MtpFtICjpH0-prs/edit#gid= SiO2 Standard Recipe]
 +
*[https://docs.google.com/spreadsheets/d/1uqpg3sirsRbXdTFlxZ6_k3t0ovP0MtpFtICjpH0-prs/edit#gid= SiO<sub>2</sub><nowiki> [PECVD 1] Standard Recipe</nowiki>]
  +
*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=0 SiO<sub>2</sub><nowiki> [PECVD 1] Current Process Control Data</nowiki>]
  +
*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1503619544 SiO<sub>2</sub><nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier
   
  +
==SiN deposition (PECVD #1)==
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====Historical Data====
  
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=====Thin-Film Properties=====
  
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*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEw0bjFEdTF2SUhRa25Ca0d0SzBha3c&usp=drive_web#gid=sharing SiO<sub>2</sub> 100nm Data 2014]
  
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*[https://docs.google.com/spreadsheets/d/1JWNUcH8l90xif-0BhYKJee9nXxE4hnvvp6N2NtZLYXY/edit#gid=sharing SiO<sub>2</sub> 100nm Data 2015]
  
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*[https://docs.google.com/spreadsheets/d/1F2pfsVnbUgaE9tsm8HZMlY6cyt-nhui0IpvGc6udhDU/edit#gid=sharing SiO<sub>2</sub> 100nm Data 2016]
  
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*[https://docs.google.com/spreadsheets/d/1MblK5Zr5Skfw0s9Hdhqr_cCwN-nCgM-ofZnsAyvVRq8/edit#gid=sharing SiO<sub>2</sub> 100nm Data 2017]
  
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*[https://docs.google.com/spreadsheets/d/15SocIqWQvBKSvT5oCWoZAURLaaqb9KosxCN2rueZQN8/edit#gid=sharing SiO<sub>2</sub> 300nm Data 2017]
  
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*[https://docs.google.com/spreadsheets/d/1DdjIRGsfJ7WCrxQoGpmzkjLGJhpBTFNYLFmmHcNjAjk/edit#gid=sharing SiO<sub>2</sub> 300nm Data 2018]
  
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*[https://docs.google.com/spreadsheets/d/1QbhukSuVNueT067IVEpweSlD4B7GQecf-tfQFQeV6Xs/edit#gid=sharing SiO<sub>2</sub> 300nm Data 2019]
  
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*[https://docs.google.com/spreadsheets/d/1OwyhfFPDH-XLPczA8cKoBPnujq9oNukaWkHq0KoFS40/edit#gid=sharing SiO<sub>2</sub> 300nm Data 2020]
  
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*[https://docs.google.com/spreadsheets/d/1I-0Ih_F9pWeOwXeEQC6IFYKNB6bBLSoBiyX8Eu3pwFg/edit#gid=sharing SiO<sub>2</sub> 300nm Data 2021]
  
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=====Thick-Film Properties=====
  
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*[https://docs.google.com/spreadsheets/d/1XgUlCaCv3jCK9RyrI553PkIS0PmiAlbWjsDwK5TOH3I/edit#gid=sharing SiO<sub>2</sub> Thick film Data 2021]
  
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====Uniformity Data====
  
   
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*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDQ3VEtZQVRpdVdlbGtIZHpTNmFzNmc&usp=drive_web#gid=sharing SiO<sub>2</sub> 100nm Thickness uniformity 2014]
 +
*[https://docs.google.com/spreadsheets/d/1DGU745SeunYz4sLs1LpGKbtOYX-tQyBHEvVYcMxHRKE/edit#gid= Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Standard Recipe</nowiki>]
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*[https://docs.google.com/spreadsheets/d/1NQy-ADou6f2NBU-9jZG8KME1lOz0X5mh6HZV9_jPGes/edit#gid=sharing SiO<sub>2</sub> 100 nm Thickness uniformity 2015]
 +
*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=98787450 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Current Process Control Data</nowiki>]
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*[https://docs.google.com/spreadsheets/d/1WUCm_dWpxKTjfFf1rNfLuxvwMxsyCYON_OZ3gb50L_s/edit#gid=sharing SiO<sub>2</sub> 100 nmThickness uniformity 2016]
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*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=604790654 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier
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*[https://docs.google.com/spreadsheets/d/1dpC_AkPD-etIH6fVuQqLfd4UMNQCEtcqhvmBpwbEncE/edit#gid=sharing SiO<sub>2</sub> 100nm Thickness uniformity 2017]
  
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*[https://docs.google.com/spreadsheets/d/1Fa8mZIBIeJwvCwUbJ-28VcvVYj8rshhuDuXsYxA-cD8/edit#gid=sharing SiO<sub>2</sub> 300nm Thickness uniformity 2017]
  
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*[https://docs.google.com/spreadsheets/d/1YB_9USpuXGpIdSW2gNsptu5nSrLWAGsYu0SWoYEy0aQ/edit#gid=sharing SiO<sub>2</sub> 300nm Thickness uniformity 2018]
  
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*[https://docs.google.com/spreadsheets/d/1FatUAEegWuDRzVa47L1_cqgRs0AZ_Fao9jpwz5sfln0/edit#gid=sharing SiO<sub>2</sub> 300nm Thickness uniformity 2019]
  
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*[https://docs.google.com/spreadsheets/d/1uAIEv_z2TJtY2XxTYnDIyKwKT4ZIhalTCyZ5SrDRJmA/edit#gid=sharing SiO<sub>2</sub> 300nm Thickness uniformity 2020]
  
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*[https://docs.google.com/spreadsheets/d/1jThamYtEiH3lVz4IzoG9ILxBG8-TufIKnUd8V0qKQU0/edit#gid=sharing SiO<sub>2</sub> 300nm Thickness uniformity 2021]
  
   
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==Low-Stress SiN - LS-SiN (PECVD#1)==
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==Low Stress Si<sub>3</sub>N<sub>4</sub> (PECVD#1)==
   
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*[https://wiki.nanotech.ucsb.edu/wiki/images/4/4a/New_PECVD1-LS_SIN-Turner05recipe_2014_LS_SIN_recipe.pdf LS SiN Standard Recipe]
 +
*[https://wiki.nanotech.ucsb.edu/wiki/images/4/4a/New_PECVD1-LS_SIN-Turner05recipe_2014_LS_SIN_recipe.pdf Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Standard Recipe</nowiki>]
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*[https://docs.google.com/spreadsheets/d/1Joz0az9TGZWQc4CiMQJZzLBbNFbx_hH2Oc0B4NNJmYk/edit#gid=sharing LS SiN Data 2014]
 +
*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1515630363 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Current Process Control Data</nowiki>]
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*[https://docs.google.com/spreadsheets/d/1xIzc2CufRYNSfAtsOXpw3IzHreeu42BWrLBV0kzP6kA/edit#gid=sharing LS SiN 1000A Thickness uniformity 2014]
 +
*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=934830479 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Historical Data</nowiki>] - 2021-10 and earlier
   
 
==SiO<sub>x</sub>N<sub>y</sub> deposition (PECVD #1)==
  
==SiO<sub>x</sub>N<sub>y</sub> deposition (PECVD #1)==
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*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiO<sub>x</sub>N<sub>y</sub>1000A Thickness uniformity 2014]
  
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiO<sub>x</sub>N<sub>y</sub>1000A Thickness uniformity 2014]
   
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==Cleaning Recipes (PECVD #1)==
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==Standard Cleaning Procedure (PECVD #1)==
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The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:
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The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:
   
 
#Wet cleaning (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
  
#Wet cleaning (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
 
#Load the recipe for cleaning "CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding a required time for cleaning.
  
#Load the recipe for cleaning "CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding a required time for cleaning.
  +
#
   
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{| class="wikitable"
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===[https://wiki.nanotech.ucsb.edu/w/images/7/72/PECVD1-cleaning.png Standard Cleaning Recipe: "CF4/O2 Clean"]===
  
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|+Table of Cleaning Times
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Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will '''pop up a window for the cleaning time upon running the recipe''' - you do not need to edit the recipe before running it.
  
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!Film Dep'd
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=[[PECVD 2 (Advanced Vacuum)]]=
  
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!Cleaning Time
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====Historical Particulate Data====
  
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|-
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|SiO<sub>2</sub>
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|TBD
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|-
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|Si<sub>3</sub>N<sub>4</sub>
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|TBD
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|-
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|SiOxNy
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|Same as XYZ
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|}
   
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#
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*[https://docs.google.com/spreadsheets/d/1kj0SWxRpnPRoGld8k3sW-3yK1iPm3buTkvlJSN5YPV4/edit#gid=sharing Particulates (Gain4) in PECVD#2 2015]
  
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*[https://docs.google.com/spreadsheets/d/1xpk9tJrE68NIJ_1yIym0xBxd4fnzHHBHdkhFehruO3E/edit#gid=sharing Particulates (Gain4) in PECVD#2 2016]
  
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*[https://docs.google.com/spreadsheets/d/1ICgt-fgTvNPbE_65x5jUsqy8JjHVv5WUvmE7g7VUbsI/edit#gid=sharing Particulates (Gain4) in PECVD#2 2017]
  
   
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===[https://wiki.nanotech.ucsb.edu/w/images/7/72/PECVD1-cleaning.png Standard Cleaning Recipe (PECVD#1): "CF4/O2 Clean"]===
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*[https://docs.google.com/spreadsheets/d/1yPAPP24z3RcRRi-HqEp3GJN4JM8Ec8SFJwZ-OYGG2HU/edit#gid=sharing Particulates in PECVD#2 films 2017]
  
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Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that '''it will pop up a window for the cleaning time''' upon running the recipe - you do not need to edit the recipe before running it.
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*[https://docs.google.com/spreadsheets/d/1aU6fTyQ5MlGD4uCa9gepG5rLJzW3wlkOWSKEl_w_Ye4/edit#gid=sharing Particulates in PECVD#2 films 2018]
  
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*[https://docs.google.com/spreadsheets/d/1OPZXe8g3H0wywIrPFel3nSZ5iyPs2mVIYUSVKfTtMDg/edit#gid=sharing Particulates in PECVD#2 films 2019]
  
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*[https://docs.google.com/spreadsheets/d/1Y9lomsf7bDojeXoAsEG7xvypx_sw_atpmPwB9xtK1Zk/edit#gid=sharing Particulates in PECVD#2 films 2020]
  
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*[https://docs.google.com/spreadsheets/d/1BauS7q_sGKkaeY6o3BOw2wyQsyS_DukJxCAbGantDW4/edit#gid=sharing Particulates in PECVD#2 films 2021]
  
   
  +
=[[PECVD 2 (Advanced Vacuum)]]=
−
==SiO<sub>2</sub> deposition (PECVD #2)==
  
−
====Standard Recipe====
  
−
<br />
  
   
−
*[https://docs.google.com/spreadsheets/d/1wCEcFj6ZMHR4QifngLXwz6dqbyf8hsVKu7bQbMS6EoA/edit#gid= STD SiO2 Recipe]
 +
===[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=272916741 PECVD 2 Plots]===
   
  +
==SiO<sub>2</sub> deposition (PECVD #2)==
−
====Historical Data====
  
−
=====Thin-Film Properties=====
  
   
  +
*[https://docs.google.com/spreadsheets/d/1wCEcFj6ZMHR4QifngLXwz6dqbyf8hsVKu7bQbMS6EoA/edit#gid= SiO<sub>2</sub><nowiki> [PECVD 2] Standard Recipe</nowiki>] - "''STD SiO2''"
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*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dGJZaGtDTVRqa1BRdW5iU1N1Y01jd0E&usp=drive_web#gid=sharing Oxide Data 2014]
  
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*[https://docs.google.com/spreadsheets/d/1d5boeJRWWgMqvQe6nVM7m8s3KAcS4Yp2L5CEU9svkX4/edit#gid=sharing Oxide Data 2015]
 +
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1313651154 SiO<sub>2</sub><nowiki> [PECVD 2] Current Process Control Data</nowiki>]
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*[https://docs.google.com/spreadsheets/d/1XQRcTJdw9AIMPAUsH0n9Ic9Fe1_xGDSvAxD4gVc9FBw/edit#gid=sharing Oxide data 2016]
 +
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=2024333220 SiO<sub>2</sub><nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021
−
*[https://docs.google.com/spreadsheets/d/1vcaHwraMGNHuRxgWwGp78EJf4T3Jk182wxoCz_neuck/edit#gid=sharing Oxide Data 2017]
  
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*[https://docs.google.com/spreadsheets/d/1VI-sUmaqois0NsCvf2kQmPfRRa03MjBzl779hmmLtP4/edit#gid=sharing Oxide Data 2018]
  
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*[https://docs.google.com/spreadsheets/d/1oWnQ3D6oknKWU2bohvSrN85rlEZgQN3YP_ZJ4i8u7do/edit#gid=sharing Oxide Data 2019]
  
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*[https://docs.google.com/spreadsheets/d/1Z9UMgaQC2PiLLrMk04mpKWkJLa1L_WFMAm5079eKxI0/edit#gid=sharing Oxide Data 2020]
  
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*[https://docs.google.com/spreadsheets/d/10XA3WnHjUZOLFunwUIlM2IqaRIiX_EGb6Jj_bw84gkI/edit#gid=sharing Oxide Data 2021]
  
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−
=====Thin-Film Properties=====
  
−  
−
*[https://docs.google.com/spreadsheets/d/19Z8IAVgumWuH0t8RN23LJ2wWZP7jYYLwRl9pDQP4obI/edit#gid=sharing Thick Oxide Data 2021]
  
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−
=====Uniformity Data=====
  
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−
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDRjSHEtYUZRUTg4azE2U0JGUTg2M1E#gid=sharing Oxide Thickness Uniformity 2014]
  
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*[https://docs.google.com/spreadsheets/d/16pZHcGwesXB1mMPwntOudBIlPvRh6A6DI37DEwyYfPw/edit#gid=sharing Oxide Thickness Uniformity 2015]
  
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*[https://docs.google.com/spreadsheets/d/10OEuANVNmHqWvx-92zibechIrHK5kgqSK4B_O_O3-YI/edit#gid=sharing Oxide Thickness Uniformity 2016]
  
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*[https://docs.google.com/spreadsheets/d/19JjJYdFNFzO685Hp9hODVRFAYF5bP3IEYGTRGQjqLN4/edit#gid=sharing Oxide Thickness Uniformity 2017]
  
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*[https://docs.google.com/spreadsheets/d/1064j6894X63WlRX3Uolxg1q1FRzUZLqSZQA9BWwzPOk/edit#gid=sharing Oxide Thickness Uniformity 2018]
  
−
*[https://docs.google.com/spreadsheets/d/1064j6894X63WlRX3Uolxg1q1FRzUZLqSZQA9BWwzPOk/edit#gid=sharing Oxide Thickness Uniformity 2019]
  
−
*[https://docs.google.com/spreadsheets/d/1Z9UMgaQC2PiLLrMk04mpKWkJLa1L_WFMAm5079eKxI0/edit#gid=sharing Oxide Thickness Uniformity 2020]
  
−
*[https://docs.google.com/spreadsheets/d/1b9Fmzp_d-XiMerFtrDiCsmS7NMNoaBtS8T0DLqoii8Y/edit#gid=sharing Oxide Thickness Uniformity 2021]
  
   
 
==SiN deposition (PECVD #2)==
  
==SiN deposition (PECVD #2)==
−
====Standard Recipe====
  
−  
−
*[https://wiki.nanotech.ucsb.edu/wiki/images/4/4c/SiNx_Films_by_PECVD2.pdf SiNx Film Stress vs LF and HF Duration Time, and Gas Flowing-rate]
  
−
*[https://docs.google.com/spreadsheets/d/1KS4HfhUJyYVep4H6CRAKpMRP5TA31F0qD-obQkKRnEI/edit#gid= STD Nitride2 Recipe]
  
−  
−
====Historical Data====
  
−
=====Thin-Film Properties=====
  
−  
−
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDE0R3FlenNPa2txNmRldTczMXZNNnc#gid=sharing Nitride2 Data 2014]
  
−
*[https://docs.google.com/spreadsheets/d/1SkYqOwgjUyMaFBPhuTjMvBTXu0KdQFNmITryF_OVi8o/edit#gid=sharing Nitride2 Data 2015]
  
−
*[https://docs.google.com/spreadsheets/d/1HJszgZyEZR9ZsiJpQM6pdsoQ6pWwI6brXasdmfDRoBQ/edit#gid=sharing Nitride2 Data 2016]
  
−
*[https://docs.google.com/spreadsheets/d/1f3JBEnr7lf0yIMlzlOYKv_bXlIDyXt8vec_rSVJIoOk/edit#gid=sharing Nitride2 Data 2017]
  
−
*[https://docs.google.com/spreadsheets/d/1OO0ewGSqYSzL3lj8fXkgckTkBGQRliD6sBc02IW7wZY/edit#gid=sharing Nitride2 Data 2018]
  
−
*[https://docs.google.com/spreadsheets/d/1Zi8CRspd3LTDdNRRCneE0--bVohWvZbV_kSHo04s0oI/edit#gid=sharing Nitride2 Data 2019]
  
−
*[https://docs.google.com/spreadsheets/d/1LEutQynQXU_9B4EqRt21PX9TGR13IqaMge7sKAXKAfg/edit#gid=sharing Nitride2 Data 2020]
  
−
*[https://docs.google.com/spreadsheets/d/1piGMPEHXiUV5WMNfaTFKdL1pnE8W2yrWHkNWHd7Au1A/edit#gid=sharing Nitride2 Data 2021]
  
−  
−
=====Uniformity Data=====
  
   
  +
*[https://docs.google.com/spreadsheets/d/1KS4HfhUJyYVep4H6CRAKpMRP5TA31F0qD-obQkKRnEI/edit#gid= Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Standard Recipe</nowiki>] - "''Nitride2''"
−
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dERkYm85bGtYQVpjVk5GTGJuMkg2anc&usp=drive_web#gid=sharing Nitride2 Thickness Uniformity 2014]
  
−
*[https://docs.google.com/spreadsheets/d/14_dYQu3z31fF_oxsUUX8BmDucgv6B07xB3_zqP0HmvM/edit#gid=sharing Nitride2 Thickness Uniformity 2015]
 +
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=773875841 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Current Process Control Data</nowiki>]
−
*[https://docs.google.com/spreadsheets/d/1qBHs7uALM2OdE-yXOq4uZk6aUQEjZRjG1C6RcMEf0sk/edit#gid=sharing Nitride2 Thickness Uniformity 2016]
 +
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1153442266 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021
−
*[https://docs.google.com/spreadsheets/d/1WJcYzHUjLrWpys_i-Q96FN_lBDBufpXZKZVEX_gri_Q/edit#gid=sharing Nitride2 Thickness Uniformity 2017]
  
−
*[https://docs.google.com/spreadsheets/d/1hzj4Fb5fN8lS0m9-rm9AgEn0Zunif5grI4X7YkAMEFU/edit#gid=sharing Nitride2 Thickness Uniformity 2018]
  
−
*[https://docs.google.com/spreadsheets/d/1hzj4Fb5fN8lS0m9-rm9AgEn0Zunif5grI4X7YkAMEFU/edit#gid=sharing Nitride2 Thickness Uniformity 2019]
  
−
*[https://docs.google.com/spreadsheets/d/1xdzjLODpe2Xb7r4PGil1q-OFqSYKuZBivqLt1T6lezw/edit#gid=sharing Nitride2 Thickness Uniformity 2020]
  
−
*[https://docs.google.com/spreadsheets/d/19x70-CIyQ41pywpL-IusldLv7XYJps9aJT5-rYYQSCs/edit#gid=sharing Nitride2 Thickness Uniformity 2021]
  
   
 
==Low-Stress SiN deposition (PECVD #2)==
  
==Low-Stress SiN deposition (PECVD #2)==
−
''Low-Stress SilIcon Nitride (< 100 MPa)''
 +
''Low-Stress SilIcon Nitride, Si<sub>3</sub>N<sub>4</sub> (< 100 MPa)''
−
====Standard Recipe====
  
   
−
*[https://docs.google.com/spreadsheets/d/1DzzI7aE61R7c6gyk6cGBdm9FtGrApiNJ4AL90ll2C8k/edit#gid= STD LS Nitride2 Recipe]
 +
*[https://docs.google.com/spreadsheets/d/1DzzI7aE61R7c6gyk6cGBdm9FtGrApiNJ4AL90ll2C8k/edit#gid= Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Standard Recipe</nowiki>] - "''LSNitride2''"
−
*''Old Versions:''
 +
***''Old Versions of the recipe:''
−
**[https://wiki.nanotech.ucsb.edu/wiki/images/a/a5/New_AdvPECVD-LS_Nitride2_300C_standard_recipe_LS_Nitride2_standard_recipe.pdf LS Nitride2 Standard Recipe 2014-5/9/2018]
 +
****[https://wiki.nanotech.ucsb.edu/wiki/images/a/a5/New_AdvPECVD-LS_Nitride2_300C_standard_recipe_LS_Nitride2_standard_recipe.pdf LS Nitride2 Standard Recipe 2014-5/9/2018]
−
**[https://wiki.nanotech.ucsb.edu/wiki/images/0/01/STD_LSNitride2_5-9-18.pdf STD LSNitride2 5/9/2018]
 +
****[https://wiki.nanotech.ucsb.edu/wiki/images/0/01/STD_LSNitride2_5-9-18.pdf STD LSNitride2 5/9/2018]
  +
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=584923738 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Current Process Control Data</nowiki>]
−  
  +
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=268003895 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Historical Data - Before Oct. 2021</nowiki>]
−
====Historical Data====
  
−
=====Thin-Film Properties=====
  
−  
−
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEZvWVhzS1pHUXZkOGcyQWZ4LTNBWGc&usp=drive_web#gid=sharing LS Nitride2 Data 2014]
  
−
*[https://docs.google.com/spreadsheets/d/16Q6BrPoNiFP0elVoSGwXRfQdHXzAXOgiyqKmEw-4kII/edit#gid=sharing LS Nitride2 Data 2015]
  
−
*[https://docs.google.com/spreadsheets/d/1GZ58eFzD-T8DJ2Nsaj74u6cvawzsOI2DmMit6Z7vqys/edit#gid=sharing LS Nitride2 Data 2016]
  
−
*[https://docs.google.com/spreadsheets/d/1gGIWqkCnykPgBc3prhXExT7QcNjWm2HdbTtwugNqm18/edit#gid=sharing LS Nitride2 Data 2017]
  
−
*[https://docs.google.com/spreadsheets/d/1vwpDtiglR2DLWiYNhpBX77cyyj9lw55iVeFz1puN7bM/edit#gid=sharing LS Nitride2 Data 2018]
  
−
*[https://docs.google.com/spreadsheets/d/1zvSl2P5T926Ol48yH3FBCZm1zCeycl3S8GWQYtzi8VI/edit#gid=sharing LS Nitride2 Data 2019]
  
−
*[https://docs.google.com/spreadsheets/d/1muyFsIspqZXB2HXiqG3t39uzeO7A7Srvh4aGdXjwCc4/edit#gid=sharing LS Nitride2 Data 2020]
  
−
*[https://docs.google.com/spreadsheets/d/1qzVA44esh71655lE1rrpGkKKNTyZRC_mv3IaiZ_HAWQ/edit#gid=sharing LS Nitride2 Data 2021]
  
−  
−
=====Uniformity Data=====
  
−  
−
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dENSak1ZNnVaVTFEQTBzdDJMSDlDTFE&usp=drive_web#gid=1=sharing LS Nitride2 Thickness Uniformity 2014]
  
−
*[https://docs.google.com/spreadsheets/d/1LpkaOpr7oNoyvxFkineD7i9FspO6LweJMulvZHJM5Zc/edit#gid=sharing LS Nitride2 Thickness Uniformity 2015]
  
−
*[https://docs.google.com/spreadsheets/d/1FRzW9BaIPF2D3cxPgjLq8hbvrBHXDNkiW6DiPVKQBRM/edit#gid=sharing LS Nitride2 Thickness Uniformity 2016]
  
−
*[https://docs.google.com/spreadsheets/d/1vyrgvdEZFgnQUilpa5Ka2nOfowY8zlmJfbQ77EamNBg/edit#gid=sharing LS Nitride2 Thickness Uniformity 2017]
  
−
*[https://docs.google.com/spreadsheets/d/17OGrhbvP8O_0mBMIsmUmEwfyFaoJnNNpMFpgBUW7qzI/edit#gid=sharing LS Nitride2 Thickness Uniformity 2018]
  
−
*[https://docs.google.com/spreadsheets/d/17OGrhbvP8O_0mBMIsmUmEwfyFaoJnNNpMFpgBUW7qzI/edit#gid=sharing LS Nitride2 Thickness Uniformity 2019]
  
−
*[https://docs.google.com/spreadsheets/d/1M4ug8SAqy2Ky70LNLW3pL2MjSs69beJVhbC2BbabHaU/edit#gid=sharing LS Nitride2 Thickness Uniformity 2020]
  
−
*[https://docs.google.com/spreadsheets/d/12wvXFHN7CV_XSFj6hB5Gd7SIXERwzkTM__58ZqzPOuk/edit#gid=sharing LS Nitride2 Thickness Uniformity 2021]
  
   
 
==Amorphous-Si deposition (PECVD #2)==
  
==Amorphous-Si deposition (PECVD #2)==
   
 
*[https://wiki.nanotech.ucsb.edu/wiki/images/9/9d/03-Amorphous-Si-PECVD-2.pdf Amorphous Si Deposition Recipe]
  
*[https://wiki.nanotech.ucsb.edu/wiki/images/9/9d/03-Amorphous-Si-PECVD-2.pdf Amorphous Si Deposition Recipe]
−
*[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/ASi_deposition_and_film_stress_using_AV_dep_tool.pdf Amorphous Si Films and Their Stress]
 +
*[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/ASi_deposition_and_film_stress_using_AV_dep_tool.pdf Amorphous Si Film Characterization and Stress]
   
−
==Cleaning Recipes (PECVD #2)==
 +
==Standard Cleaning Procedure (PECVD #2)==
−
===Cleaning Procedure (PECVD#2)===
  
 
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:
  
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:
   
 
#(If >29min dep time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again.
  
#(If >29min dep time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again.
−
#Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.
 +
#Load the recipe for cleaning "STD CF<sub>4</sub>/O<sub>2</sub> Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.
   
−
===[https://wiki.nanotech.ucsb.edu/w/images/3/34/PECVD2_photo_for_cleaning.png Standard Clean Recipe: "STD CF4/O2 Clean recipe"]===
 +
===[https://wiki.nanotech.ucsb.edu/w/images/3/34/PECVD2_photo_for_cleaning.png Standard Clean Recipe (PECVD#2): "STD CF4/O2 Clean"]===
−
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will '''pop up a window for the cleaning time upon running the recipe''' - you do not need to edit the recipe before running it.
 +
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.
  +
−
===Clean Times (PECVD#2)===
  
  +
  +
'''Clean Times (PECVD#2''')
 
{| class="wikitable"
  
{| class="wikitable"
 
!Film Deposited
  
!Film Deposited
Line 237: Line 115:
 
|Wet Clean the Upper Lid/Chamber
  
|Wet Clean the Upper Lid/Chamber
 
DI water then Isopropyl Alcohol on chamber wall & portholes
  
DI water then Isopropyl Alcohol on chamber wall & portholes
−
|}<br />
 +
|}
  +
 
=[[ICP-PECVD (Unaxis VLR)]]=
  
=[[ICP-PECVD (Unaxis VLR)]]=
−
2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the [[ICP-PECVD (Unaxis VLR)#Documentation|'''new procedures''']] to ensure low particle counts in the chamber.
 +
2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the [[ICP-PECVD (Unaxis VLR)#Documentation|new procedures]] to ensure low particle counts in the chamber.
   
−
The system currently has '''Deuterated Silane (SiD<sub>4</sub>) installed''' - identical to the regular Silicon precursor SiH<sub>4</sub>, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights.
 +
The system currently has Deuterated Silane (SiD<sub>4</sub>) installed - identical to the regular Silicon precursor SiH<sub>4</sub>, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights.
−
====Historical Particulate Data====
  
   
−
*[https://docs.google.com/spreadsheets/d/1ZzbpDmkOI3IvGuKqyiQIP44sYJ89E3Zs9sLvjxvWMsc/edit#gid=sharing Particulates in Unaxis films @250C-2019]
 +
===[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948 ICP-PECVD Plots] - TBD===
−
*[https://docs.google.com/spreadsheets/d/1fMebt-6BfAurcjMv1aDsmm6VgPqokU73_2ReZFqzEEk/edit#gid=sharing Particulates in Unaxis films @250C-2020]
  
   
  +
==Low Deposition Rate SiO<sub>2</sub> [ICP-PECVD]==
−
====Standard Recipes====
  
   
−
*[https://docs.google.com/spreadsheets/d/1T_4gaJQ3wHSNptoAtFR1fN0ePwfw3PsQ0DLSjqGeyM4/edit#gid=sharing SiO2 LDR 250C Recipe-2020]
 +
*[https://docs.google.com/spreadsheets/d/1wocoCPOOEDQcZbXJJNaZs1sr9dXBZpn1wUyglL8IQrI/edit#gid=1199123007 Low Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR 250C''"
−
*[https://docs.google.com/spreadsheets/d/1nsdGPpfyZfIesyYG1PIU9uYyuzQWrfpsvVWM6J_H6BI/edit#gid=sharing SiO2 HDR 250C Recipe-2020]
 +
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
−
*[https://docs.google.com/spreadsheets/d/1UTr93aWx0MjCwVBwRmYjPwo9ASluGQ-OrJhVG_R57aY/edit#gid=sharing SiN 250C Recipe-2020]
 +
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1916118198 Low Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021
−
*[https://docs.google.com/spreadsheets/d/1MXW7UNpTyk93ucOVQaSun5IX7QaUbSABNHNznb09qw8/edit#gid=sharing SiN LS 250C Recipe-2020]
  
   
  +
==High Deposition Rate SiO<sub>2</sub> [ICP-PECVD]==
−
==SiO2 LDR 250C Deposition (Unaxis VLR)==
  
−
''Low-Deposition Rate SiO<sub>2</sub>''
  
−
====Historical Data====
  
−
=====Thin-Film Properties=====
  
−
This data is for 780sec long SiO2 LDR (low deposition rate) deposition, and cleaning time is 900sec, following the procedure [[here]].
  
   
−
*[https://docs.google.com/spreadsheets/d/1wocoCPOOEDQcZbXJJNaZs1sr9dXBZpn1wUyglL8IQrI/edit#gid=sharing SiO2 LDR 250C 300nm Data-2019]
 +
*[https://docs.google.com/spreadsheets/d/1OxHi5r9ifNvF8ODpIk6aoRevb4RdbbykwPVMm1g-yi4/edit#gid=1199123007 High Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] Standard Recipe</nowiki>] - "''SiO2 HDR 250C''"
−
*[https://docs.google.com/spreadsheets/d/1bU2Gu3x3DNyrq8skMAQZJCsra-IcoDCT0U5D135YPgc/edit#gid=sharing SiO2 LDR 250C 300nm Data-2020]
 +
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] Present Data</nowiki>]
  +
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=939753086 High Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] Historical Data</nowiki>]
   
  +
==Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD]==
−
=====Uniformity Data=====
  
   
−
*[https://docs.google.com/spreadsheets/d/1Xi21OrargcNRthZ2fM_56APB8O599ctDfq5E_6B5Ft0/edit#gid=sharing Thickness Uniformity SiO2 LDR 250C 300nm-2019]
 +
*[https://docs.google.com/spreadsheets/d/1VrgS0cB2OcdZVTCnDAesgQCLRaAgEB_Iajc_OrhXOo0/edit#gid=1199123007 Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] Standard Recipe</nowiki>] - "''SiN 250C''"
−
*[https://docs.google.com/spreadsheets/d/1-ytu5R75FAXNfhJZTRuK2eRZyu_L6Hy1BWV2zN6_tRA/edit#gid=sharing Thickness Uniformity SiO2 LDR 250C 300nm-2020]
 +
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] Current Process Control Data</nowiki>]
  +
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=782128304 Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] Historical Data</nowiki>] - before Oct. 2021
   
  +
==Low Stress Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD]==
−
==SiO2 HDR 250C Deposition (Unaxis VLR)==
  
−
''High-Deposition Rate SiO<sub>2</sub>''
  
−
====Historical Data====
  
−
=====Thin-Film Properties=====
  
−
This data is for 180sec long SiO2 HDR ( high deposition rate) deposition, and cleaning time is 900sec, following the procedure [[here]].
  
   
−
*[https://docs.google.com/spreadsheets/d/16s-tUna9xrkKneK1lE-qSPuUHWlDmP6Qu3IngBXP3R8/edit#gid=sharing SiO2 HDR 250C 300nm Data-2019]
 +
*[https://docs.google.com/spreadsheets/d/1i2mE2K12EEulnCbO9KuU9PCcvHAmcGxTIXUF8x4IOWk/edit#gid=1199123007 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] Standard Recipe</nowiki>] - "''SiN Low Stress 250C''"
−
*[https://docs.google.com/spreadsheets/d/1OxHi5r9ifNvF8ODpIk6aoRevb4RdbbykwPVMm1g-yi4/edit#gid=sharing SiO2 HDR 250C 300nm Data-2020]
 +
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] Current Process Control Data</nowiki>]
  +
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1024532473 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] Historical Data</nowiki>] - before Oct. 2021
   
  +
==Standard Cleaning Procedure [ICP-PECVD]==
−
=====Uniformity Data=====
  
  +
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details.
   
  +
*SiNx etches at 20nm/min
−
*[https://docs.google.com/spreadsheets/d/1Mm_rsTm9xDQ50kZx6X6EZ5dTegUvinq0zFxRtE8B2R4/edit#gid=sharing Thickness Uniformity SiO2 HDR 250C 300nm-2019]
  
  +
*SiO<sub>2</sub> etches at 40nm/min
−
*[https://docs.google.com/spreadsheets/d/1nzVeCKsmgL17zft6axQlixpvsEowJOG7qCnLQm_0XxE/edit#gid=sharing Thickness Uniformity SiO2 HDR 250C 300nm-2020]
  
   
  +
===Standard Clean Recipe===
−
==SiN 250C deposition (Unaxis VLR)==
  
  +
''To Be Added''
−
====Historical Data====
  
−
=====Thin-Film Properties=====
  
−
This data is for 480sec long SiN deposition, and cleaning time is 1500sec, following the procedure [[here]].
  
   
  +
=[[Ion Beam Deposition (Veeco NEXUS)]]=
−
*[https://docs.google.com/spreadsheets/d/1VrgS0cB2OcdZVTCnDAesgQCLRaAgEB_Iajc_OrhXOo0/edit#gid=sharing SiN 250C 300nm Data-2020]
  
  +
Ion-Beam Assisted Deposition - high density reactive sputtering, with angled/rotating fixtures.
   
  +
[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=2030038046 IBD Plots] - '''''To Be Added'''''
−
=====Uniformity Data=====
  
   
  +
==SiO<sub>2</sub> deposition (IBD)==
−
*[https://docs.google.com/spreadsheets/d/1YAx_Ix84xId8CAhDwZeFT7jLFUwg-BET9aBwg3DxUmQ/edit#gid=sharing Thickness Uniformity SiN 250C 300nm-2020]
  
   
  +
*[https://wiki.nanotech.ucsb.edu/wiki/images/8/8d/New_IBD_SiO2_Standard_Recipe.pdf SiO<sub>2</sub><nowiki> [IBD] Standard Recipe</nowiki>] - "''1_SiO2_dep''"
−
==SiN LS 250C Deposition (Unaxis VLR)==
  
  +
*[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=0 SiO<sub>2</sub><nowiki> [IBD] Current Process Control Data</nowiki>]
−
''Low Stress Silicon-Nitride''
  
  +
*[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=700537698 SiO<sub>2</sub><nowiki> [IBD] Historical Data</nowiki>] - Before Oct. 2021
−
====Historical Data====
  
−
''To Be Added''
  
−
=====Thin-Film Properties=====
  
−
This data is for 180sec long SiN LS (low stress) deposition, and cleaning time is 1500sec, following the procedure [[here]].
  
   
  +
====SiO<sub>2</sub> Thin-Film Properties (IBD)====
−
*[https://docs.google.com/spreadsheets/d/1i2mE2K12EEulnCbO9KuU9PCcvHAmcGxTIXUF8x4IOWk/edit#gid=sharing SiN LS 250C 300nm Data-2020]
  
   
  +
*Dep.rate: ≈ 5.2 nm/min (users must calibrate this prior to critical deps)
−
=====Uniformity Data=====
  
  +
*HF Etch Rate ~350 nm/min
  +
*Stress ≈ -390MPa (compressive)
  +
*Refractive Index: ≈ 1.494
  +
*[[wikipedia:Cauchy's_equation|Cauchy Parameters]] (350-2000nm):
  +
**A = 1.480
  +
**B = 0.00498
  +
**C = -3.2606e-5
   
  +
==Si<sub>3</sub>N<sub>4</sub> deposition (IBD)==
−
*[https://docs.google.com/spreadsheets/d/1NDyxH1i9COM2XTryLqYPE9yOekgRslAJUO7o56iTOEQ/edit#gid=sharing Thickness Uniformity SiN LS 250C 300nm-2020]
  
   
  +
*[https://wiki.nanotech.ucsb.edu/wiki/images/d/d3/IBD_SiNdeposition.pdf Si<sub>3</sub>N<sub>4</sub><nowiki> [IBD] Standard Recipe</nowiki>] - "''1_Si3N4_Dep''"
−
==Cleaning Recipes (Unaxis VLR Dep)==
  
  +
*[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=971672318 Si<sub>3</sub>N<sub>4</sub><nowiki> [IBD] Current Process Control Data</nowiki>]
−
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details.
  
  +
*[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=2093120876 Si<sub>3</sub>N<sub>4</sub><nowiki> [IBD] Historical Data</nowiki>] - before Oct. 2021
   
  +
===Si<sub>3</sub>N<sub>4</sub> Thin-Film Properties (IBD)===
−
*SiNx etches at 20nm/min
  
  +
−
*SiO2 etches at 40nm/min
  
  +
*Deposition Rate: ≈ 4.10 nm/min (users must calibrate this prior to critical deps)
  +
*HF Etch Rate: ~11nm/min
  +
*Stress ≈ -1590MPa (compressive)
  +
*Refractive Index: ≈ 1.969
  +
*[[wikipedia:Cauchy's_equation|Cauchy Parameters]] (350-2000nm):
  +
**A = 2.000
  +
**B = 0.01974
  +
**C = 1.2478e-4
  +
  +
==Ta<sub>2</sub>O<sub>5</sub> deposition (IBD)==
  +
  +
*[https://wiki.nanotech.ucsb.edu/wiki/images/8/85/IBD_Ta2O5_deposition_details.pdf Ta<sub>2</sub>O<sub>5</sub><nowiki> [IBD] Standard Recipe</nowiki>] - "''1_Ta2O5_dep''"
  +
*[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=855566098 Ta<sub>2</sub>O<sub>5</sub><nowiki> [IBD] Current Process Control Data</nowiki>]
  +
*[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=1075234846 Ta<sub>2</sub>O<sub>5</sub><nowiki> [IBD] Historical Data</nowiki>] - before Oct. 2021
  +
  +
====Ta2O5 Thin-Film Properies (IBD)====
  +
  +
*Ta2O5 1hr depositions:
  +
*Deposition Rate: ≈ 7.8 nm/min (users must calibrate this prior to critical deps)
  +
*HF Etch Rate ≈ 2 nm/min
  +
*Stress ≈ -232MPa (compressive)
  +
*Refractive Index: ≈ 2.172
  +
*[[wikipedia:Cauchy's_equation|Cauchy Parameters]] (350-2000nm):
  +
**A = 2.1123
  +
**B = 0.018901
  +
**C = -0.016222
  +
  +
==Al<sub>2</sub>O<sub>3</sub> deposition (IBD)==
  +
  +
*Al<sub>2</sub>O<sub>3</sub> [IBD] Standard Recipe - "''1_Al2O3_dep''"
  +
*[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=713133870 Al<sub>2</sub>O<sub>3</sub><nowiki> [IBD] Present Data</nowiki>]
  +
*[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=1294329492 Al<sub>2</sub>O<sub>3</sub><nowiki> [IBD] Historical Data</nowiki>]
  +
  +
===Al2O3 Thin-Film Properties (IBD)===
  +
  +
**Deposition Rate ≈ 2.05nm/min (users must calibrate this prior to critical deps)
  +
**HF etch rate ≈ 167nm/min
  +
**Stress ≈ -332MPa (compressive)
  +
**Refractive Index: ≈ 1.656
  +
**[[wikipedia:Cauchy's_equation|Cauchy Parameters]] (350-2000nm):
  +
***A = ''To Be Added''
  +
***B =
  +
***C =
  +
**Absorbing < ~350nm
  +
  +
==TiO<sub>2</sub> deposition (IBD)==
  +
  +
*[https://wiki.nanotech.ucsb.edu/wiki/images/3/3b/New_IBD_TiO2_deposition.pdf TiO<sub>2</sub><nowiki> [IBD] Standard Recipe</nowiki>] - "''1_TiO2_dep''"
  +
*[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=834404663 TiO<sub>2</sub><nowiki> [IBD] Current Process Control Data</nowiki>]
  +
*[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=1327808550 TiO<sub>2</sub><nowiki> [IBD] Historical Data</nowiki>]
  +
  +
===TiO<sub>2</sub> Thin-Film Properties (IBD)===
  +
  +
*Deposition Rate: ≈ 1.29 nm/min (users must calibrate this prior to critical deps)
  +
*HF etch rate ~5.34nm/min
  +
*Stress ≈ -445MPa (compressive)
  +
*Refractive Index: ≈ 2.259
  +
*[[wikipedia:Cauchy's_equation|Cauchy Parameters]] (350-2000nm):
  +
**A = 2.435
  +
**B = -4.9045e-4
  +
**C = 0.01309
  +
*Absorbing < ~350nm wavelength
  +
  +
===SiO<sub>x</sub>N<sub>y</sub> deposition (IBD)===
  +
These are some old (2010), initial characterizations only. A recipe improvement would be to increase the Assist O2+N2 = 60sccm total, increasing repeatability. Contact [[Demis D. John|Demis]] for more info.
  +
{|
  +
![[File:IBD SiON Index @ 623nm vs. O2 Gas Flow - v3 - wiki.jpg|alt=plot showing varying refractive index between Si3N4 and SiO2|none|thumb|250x250px|IBD SiO<sub>x</sub>N<sub>y</sub>: Refractive Index vs. O2/N2 Flow.]]
  +
![[File:IBD SiON - Dep rate vs O2 flow - wiki.png|alt=Rate varies monotonically from 53-5 Å/min.|none|thumb|Dep. Rate of IBD SiO<sub>x</sub>N<sub>y</sub> vs. Assist O<sub>2</sub> flow.]]
  +
|}
  +
  +
==Standard Cleaning Procedure (IBD)==
  +
You must edit the "''#_GridClean''"("#" is your group number) steps in your Process according to the following times:
  +
  +
*5min GridClean for 1hr or less deposition
  +
*10min GridClean for up to 2hrs of dep.
  +
*Do not deposit for longer than 2hrs - instead break up your Process into multiple 2-hr subroutines with cleans in between. See the recipe "''1_SiO2_Dep_Multi''" for an example.
  +
  +
===Standard Grid-Clean Recipe===
  +
''To Be Added''
  +
  +
  +
<br />

Latest revision as of 00:07, 16 December 2021

NEW data templates - Demis 2021-12-15


Back to Vacuum Deposition Recipes

PECVD 1 (PlasmaTherm 790)

PECVD 1 Plots - SiO2, SiN and Particulate Count

SiO2 deposition (PECVD #1)

SiN deposition (PECVD #1)

Low Stress Si3N4 (PECVD#1)

SiOxNy deposition (PECVD #1)

Standard Cleaning Procedure (PECVD #1)

The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

  1. Wet cleaning (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
  2. Load the recipe for cleaning "CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding a required time for cleaning.
Table of Cleaning Times
Film Dep'd Cleaning Time
SiO2 TBD
Si3N4 TBD
SiOxNy Same as XYZ

Standard Cleaning Recipe (PECVD#1): "CF4/O2 Clean"

Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.

PECVD 2 (Advanced Vacuum)

PECVD 2 Plots

SiO2 deposition (PECVD #2)

SiN deposition (PECVD #2)

Low-Stress SiN deposition (PECVD #2)

Low-Stress SilIcon Nitride, Si3N4 (< 100 MPa)

Amorphous-Si deposition (PECVD #2)

Standard Cleaning Procedure (PECVD #2)

The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

  1. (If >29min dep time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again.
  2. Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.

Standard Clean Recipe (PECVD#2): "STD CF4/O2 Clean"

Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.


Clean Times (PECVD#2)

Film Deposited Cleaning Time (Dry)
SiO2 1 min. clean for every 1 min. deposition
Si3N4 1 min. clean for every 7 min of deposition
If > 29min total dep time

(Season + Dep)

Wet Clean the Upper Lid/Chamber

DI water then Isopropyl Alcohol on chamber wall & portholes

ICP-PECVD (Unaxis VLR)

2020-02: New recipes have been characterized for low particulate count and repeatability.  Only staff-supplied recipes are allowed in the tool. Please follow the new procedures to ensure low particle counts in the chamber.

The system currently has Deuterated Silane (SiD4) installed - identical to the regular Silicon precursor SiH4, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights.

ICP-PECVD Plots - TBD

Low Deposition Rate SiO2 [ICP-PECVD]

High Deposition Rate SiO2 [ICP-PECVD]

Si3N4 [ICP-PECVD]

Low Stress Si3N4 [ICP-PECVD]

Standard Cleaning Procedure [ICP-PECVD]

You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the Operating Procedure on the Unaxis Tool Page for details.

  • SiNx etches at 20nm/min
  • SiO2 etches at 40nm/min

Standard Clean Recipe

To Be Added

Ion Beam Deposition (Veeco NEXUS)

Ion-Beam Assisted Deposition - high density reactive sputtering, with angled/rotating fixtures.

IBD Plots - To Be Added

SiO2 deposition (IBD)

SiO2 Thin-Film Properties (IBD)

  • Dep.rate: ≈ 5.2 nm/min (users must calibrate this prior to critical deps)
  • HF Etch Rate ~350 nm/min
  • Stress ≈ -390MPa (compressive)
  • Refractive Index: ≈ 1.494
  • Cauchy Parameters (350-2000nm):
    • A = 1.480
    • B = 0.00498
    • C = -3.2606e-5

Si3N4 deposition (IBD)

Si3N4 Thin-Film Properties (IBD)

  • Deposition Rate: ≈ 4.10 nm/min (users must calibrate this prior to critical deps)
  • HF Etch Rate: ~11nm/min
  • Stress ≈ -1590MPa (compressive)
  • Refractive Index: ≈ 1.969
  • Cauchy Parameters (350-2000nm):
    • A = 2.000
    • B = 0.01974
    • C = 1.2478e-4

Ta2O5 deposition (IBD)

Ta2O5 Thin-Film Properies (IBD)

  • Ta2O5 1hr depositions:
  • Deposition Rate: ≈ 7.8 nm/min (users must calibrate this prior to critical deps)
  • HF Etch Rate ≈ 2 nm/min
  • Stress ≈ -232MPa (compressive)
  • Refractive Index: ≈ 2.172
  • Cauchy Parameters (350-2000nm):
    • A = 2.1123
    • B = 0.018901
    • C = -0.016222

Al2O3 deposition (IBD)

Al2O3 Thin-Film Properties (IBD)

    • Deposition Rate ≈ 2.05nm/min (users must calibrate this prior to critical deps)
    • HF etch rate ≈ 167nm/min
    • Stress ≈ -332MPa (compressive)
    • Refractive Index: ≈ 1.656
    • Cauchy Parameters (350-2000nm):
      • A = To Be Added
      • B =
      • C =
    • Absorbing < ~350nm

TiO2 deposition (IBD)

TiO2 Thin-Film Properties (IBD)

  • Deposition Rate: ≈ 1.29 nm/min (users must calibrate this prior to critical deps)
  • HF etch rate ~5.34nm/min
  • Stress ≈ -445MPa (compressive)
  • Refractive Index: ≈ 2.259
  • Cauchy Parameters (350-2000nm):
    • A = 2.435
    • B = -4.9045e-4
    • C = 0.01309
  • Absorbing < ~350nm wavelength

SiOxNy deposition (IBD)

These are some old (2010), initial characterizations only. A recipe improvement would be to increase the Assist O2+N2 = 60sccm total, increasing repeatability. Contact Demis for more info.

plot showing varying refractive index between Si3N4 and SiO2
IBD SiOxNy: Refractive Index vs. O2/N2 Flow.
Rate varies monotonically from 53-5 Å/min.
Dep. Rate of IBD SiOxNy vs. Assist O2 flow.

Standard Cleaning Procedure (IBD)

You must edit the "#_GridClean"("#" is your group number) steps in your Process according to the following times:

  • 5min GridClean for 1hr or less deposition
  • 10min GridClean for up to 2hrs of dep.
  • Do not deposit for longer than 2hrs - instead break up your Process into multiple 2-hr subroutines with cleans in between. See the recipe "1_SiO2_Dep_Multi" for an example.

Standard Grid-Clean Recipe

To Be Added



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