DS-K101-304 Bake Temp. versus Develop Rate
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Conditions
All wafers were spun at 1.5krpm and baked for 60s at various temperatures (200C, 210C, 220C).
Checked thickness on the ellipsometer, developed in 300MIF for 30s and check thickness again.
| Bake Temp | Bake Time | Develop Rate |
|---|---|---|
| 200°C | 60 sec | ~20 nm/min |
| 210°C | 60 sec | ~3 nm/min |
| 220°C | 60 sec | ~0.1 nm/min |
Courtesy Brian Burkett, 2019