Difference between revisions of "Contact Aligner (SUSS MA-6)"

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(→‎Documentation: link to "backside alignment - allowed mark locations")
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|picture=ContactAligner.jpg
  
|picture=ContactAligner.jpg
 
|type = Lithography
  
|type = Lithography
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|super= Don Freeborn
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|super= Lee Sawyer
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|phone=(805)839-3918x216
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|phone=(805) 893-2123
 
|location=Bay 7
  
|location=Bay 7
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|email=freeborn@ece.ucsb.edu
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|email=lee_sawyer@ucsb.edu
 
|description = Mask Aligner/Bond Aligner (MA/BA-6)
  
|description = Mask Aligner/Bond Aligner (MA/BA-6)
 
|manufacturer = Karl Suss America
  
|manufacturer = Karl Suss America
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|toolid=33
  
|toolid=33
 
}}
 
}}
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= About =
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==About==
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This system is a dual-use mask aligner and wafer-bond aligner. Mask alignment is used for contact and proximity exposure processes. Exposures can be done with gaps programmable from 0 um to 300 um in 1 um increments. Automatic wedge compensation is used to ensure that the mask and wafer are parallel. Lithography can be done on wafers from 2” to 6” in diameter. Piece parts are better handled on the MJB-3 aligners. An automated image capture system is used for alignment at 5x, 10x, or 20x magnification. Programs are stored as recipes on the computer controlled unit. The system is fitted with visible, bottom-side optics, back-side alignment capability. The lamp is a 350 W Hg-Arc lamp, providing significant power in the g-h-and i-line regime. Integrated light level sensing ensures proper exposure doses as the lamp degrades. Bond alignment can be done on 3” to 6” wafers. The bond alignment is done with special fixturing to allow aligned samples to be transferred to the Karl-Suss SB6 system.
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This system is a dual-use mask aligner and wafer-bond aligner. Mask alignment is used for contact and proximity exposure processes. Exposures can be performed with gaps programmable from 10 um to 300 um in 1 um increments. Automatic wedge error compensation (WEC) is used to ensure that the mask and wafer are parallel. Lithography can be performed on wafers from 2” to 6” in diameter. Piece parts are better handled on the MJB-3 aligners. An automated image capture system is used for back side alignment at 5x, 10x, or 20x magnification. The system is fitted with visible, bottom-side optics for back-side alignment capability. The lamp is a 350 W Hg-Arc lamp, providing significant power in the g-h-and i-line regime. Integrated light level sensing ensures proper exposure doses as the lamp degrades. Bond alignment can be performed on 3” to 6” wafers. The bond alignment is performed with special fixturing to allow aligned samples to be transferred to the Karl-Suss SB6 system.
   
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=Detailed Specifications=
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==Detailed Specifications==
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*350 W Hg arc lamp, broadband exposure with Suss UV400 Optics
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*350 W Hg arc lamp, broadband exposure with Suss UV400 Optics (350 - 450 nm)
⚫
*Automatic Light Intensity Drift Compensation
  
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*Resolution (per Manufacturer*):
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*Programmable recipes
  
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**''<nowiki>*</nowiki> Resolution achieved on 150 mm Si-wafer with 1.2 µm thick AZ 4110''
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*Programmable exposure gaps of 0-300 um in 1 um steps
  
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**Vacuum Contact: <0.8 µm
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*Stored video imaging for precise, repeatable alignment
  
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**Hard Contact: <1.5 µm
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**Soft Contact: <2.5 µm
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**Proximity (@ 20 µm): <3.0µm
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*Topside alignment accuracy: down to 0.5 µm
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*Backside alignment accuracy: down to 1 µm
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  ⚫
*Automatic Light Intensity Drift Compensation:
  +
**Channel 1 is calibrated to 9 mW/cm² at 365 nm
  +
**Channel 2 is calibrated to 15 mW/cm² at 405 nm
  ⚫
*Programmable "proximity exposure" gaps of 10-300 um in 1 um steps
  ⚫
*Stored video imaging for overlay alignment
 
*Visible Back-Side Alignment System
  
*Visible Back-Side Alignment System
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*Lithography for 2” to 6” diameter wafers
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*Lithography for 2” to 6” diameter wafers - 6 mm maximum thickness
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*Pieces down to 5 x 5 mm - Please be aware of the stage movement range: X ± 10mm, Y ± 5 mm
 
*Bond alignment for 3” to 6” wafers, integrates with SB6 bond
  
*Bond alignment for 3” to 6” wafers, integrates with SB6 bond
 
*Other wafer sizes can be discussed with staff
  
*Other wafer sizes can be discussed with staff
   
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=Documentation=
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==Documentation==
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*[https://wiki.nanotech.ucsb.edu/w/images/4/41/MA-6_SOP_Rev_D.pdf MA6 Standard Operating Procedure, includes BSA]
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*[https://wiki.nanotech.ucsb.edu/w/images/7/75/MA-6_Exp_Mode_Visual_Aid.pdf MA6 Exposure Mode Information]
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*[[MA6 Backside Alignment - Allowed Mark Locations]]
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*[https://wiki.nanotech.ucsb.edu/w/images/4/40/BA6_SOP_Rev_A.pdf BA6 Standard Operating Procedure]
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==Recipes==
   
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*Recipes > Lithography > '''[[Contact Alignment Recipes#Contact Aligner .28SUSS MA-6.29|Suss MA6]]'''
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*{{file|Suss MA6 SOP1.pdf|Suss_MA6_Standard Operating Instruction1.pdf}}
  
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**''Also lists the exposure powers.''
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*{{file|Suss MA6 SOP2.pdf|Suss_MA6_Standard Operating Instruction2.pdf}}
  
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*{{file|Suss MA6 SOP3.pdf|Suss_MA6_Standard Operating Instruction3.pdf}}
  
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*{{file|Suss MA6 SOP4.pdf|Suss_MA6_Standard Operating Instruction4.pdf}}
  

Revision as of 12:12, 8 December 2021

Contact Aligner (SUSS MA-6)
ContactAligner.jpg
Tool Type Lithography
Location Bay 7
Supervisor Lee Sawyer
Supervisor Phone (805) 893-2123
Supervisor E-Mail lee_sawyer@ucsb.edu
Description Mask Aligner/Bond Aligner (MA/BA-6)
Manufacturer Karl Suss America
Sign up for this tool


About

This system is a dual-use mask aligner and wafer-bond aligner. Mask alignment is used for contact and proximity exposure processes. Exposures can be performed with gaps programmable from 10 um to 300 um in 1 um increments. Automatic wedge error compensation (WEC) is used to ensure that the mask and wafer are parallel. Lithography can be performed on wafers from 2” to 6” in diameter. Piece parts are better handled on the MJB-3 aligners. An automated image capture system is used for back side alignment at 5x, 10x, or 20x magnification. The system is fitted with visible, bottom-side optics for back-side alignment capability. The lamp is a 350 W Hg-Arc lamp, providing significant power in the g-h-and i-line regime. Integrated light level sensing ensures proper exposure doses as the lamp degrades. Bond alignment can be performed on 3” to 6” wafers. The bond alignment is performed with special fixturing to allow aligned samples to be transferred to the Karl-Suss SB6 system.

Detailed Specifications

  • 350 W Hg arc lamp, broadband exposure with Suss UV400 Optics (350 - 450 nm)
  • Resolution (per Manufacturer*):
    • * Resolution achieved on 150 mm Si-wafer with 1.2 µm thick AZ 4110
    • Vacuum Contact: <0.8 µm
    • Hard Contact: <1.5 µm
    • Soft Contact: <2.5 µm
    • Proximity (@ 20 µm): <3.0µm
  • Topside alignment accuracy: down to 0.5 µm
  • Backside alignment accuracy: down to 1 µm
  • Automatic Light Intensity Drift Compensation:
    • Channel 1 is calibrated to 9 mW/cm² at 365 nm
    • Channel 2 is calibrated to 15 mW/cm² at 405 nm
  • Programmable "proximity exposure" gaps of 10-300 um in 1 um steps
  • Stored video imaging for overlay alignment
  • Visible Back-Side Alignment System
  • Lithography for 2” to 6” diameter wafers - 6 mm maximum thickness
  • Pieces down to 5 x 5 mm - Please be aware of the stage movement range: X ± 10mm, Y ± 5 mm
  • Bond alignment for 3” to 6” wafers, integrates with SB6 bond
  • Other wafer sizes can be discussed with staff

Documentation

Recipes

  • Recipes > Lithography > Suss MA6
    • Also lists the exposure powers.
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