Difference between revisions of "CAIBE (Oxford Ion Mill)"

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|type = Dry Etch
 
|type = Dry Etch
 
|super= Brian Lingg
 
|super= Brian Lingg
|phone= 805-893-3918x210
 
 
|location=Bay 2
 
|location=Bay 2
|email=lingg@ece.ucsb.edu
 
 
|description = CAIBE (Chemically Assisted Ion Beam Etcher)
 
|description = CAIBE (Chemically Assisted Ion Beam Etcher)
 
|manufacturer = Oxford Instruments
 
|manufacturer = Oxford Instruments
 +
|model = Ionfab 300 Plus
 
|materials = Various
 
|materials = Various
 
|toolid=58
 
|toolid=58
 
}}  
 
}}  
= About =
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==About==
  
This is an Oxford Instruments PlasmaLab 300 IBE/RIBE/CAIBE system used for ion beam etching of a variety of materials including metals, oxides, semiconductors.  Ion beam etching allows control of sidewall etch profiles by tilting and rotating the sample during the etch.  Reactive chemistry is used, when appropriate, to enhance the etch rate of materials, such as oxides, polymers, and semiconductors.   
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This is an Oxford Instruments PlasmaLab 300 IBE/RIBE/CAIBE system used for ion beam etching of a variety of materials including metals, oxides, semiconductors.  Ion beam etching (IBE) allows control of sidewall etch profiles by tilting and rotating the sample during the etch.  Reactive chemistry ("Chemically Assisted Ion Beam Etching", CAIBE) can be used, when appropriate, to enhance the etch rate of materials, such as oxides, polymers, and semiconductors.   
  
This system is used to ion beam etch noble and inert metals with Ar ion milling and to etch other materials that react with chlorine, fluorine, or oxygen using a reactive ion beam. The ion beam is generated in a 15cm diameter 3-grid ion source manufactured by Oxford.  Ion beam voltage and ion beam current control the etch rate.  Beam voltage affects the sputter yield (atoms etched per incident ion) and Ion beam current controls the flux of ions.  Etch rate should be roughly linear with current.  Neutralizing electrons are generated by a plasma bridge neutralizer (PBN) so that samples are not charged by ions during the etch.  Samples can be cooled to 5C or heated to 300C for etching.  He back-side cooling is used to transfer heat from(to) the sample to(from) the cooled(heated) platen.   
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This system is used to physically ion beam etch noble and inert metals with Ar ion milling, and to etch other materials that react with chlorine, fluorine, or oxygen using a reactive ion beam. The ion beam is generated in a 15cm diameter 3-grid ion source manufactured by Oxford.  The Ion beam voltage & current control the etch rate.  Beam voltage (related to ion energy) affects the sputter yield (atoms etched per incident ion) and Ion beam current controls the flux of ions (number of ions in the beam).  Etch rate should be roughly linear with beam current.  Neutralizing electrons are generated by a plasma bridge neutralizer (PBN) so that samples are not charged by ions during the etch.  Samples can be cooled to 5°C or heated to 300°C for etching.  He back-side cooling is used to transfer heat from(to) the sample to(from) the cooled(heated) platen.   
  
The system is clustered with 2 Oxford ALD systems, allowing the process flexibility of etching followed by ALD passivation or metalization without breaking vacuum.
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===Cluster Configuration===
 +
The Ion Mill system is clustered with 2 Oxford ALD systems, allowing the process flexibility of etching followed by ALD passivation or metalization without breaking vacuum.
  
= Detailed Specifications  =
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*Chamber #1: [[Atomic Layer Deposition (Oxford FlexAL)|ALD Metal Films only]]
 +
*Chamber #2: [[CAIBE (Oxford Ion Mill)|CAIBE Oxford Ion Mill]] (this page)
 +
*Chamber #3: [[Atomic Layer Deposition (Oxford FlexAL)|ALD Dielectrics Films only]]
  
*Etch gases include: CF<sub>4</sub>, Cl<sub>2</sub>, Ar, O<sub>2</sub>  
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==Detailed Specifications==
*Cl<sub>2</sub> available in CAIBE mode (Cl2 not entering ion gun) through a gas ring.  
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 +
*Etch gases include: CF<sub>4</sub>, Cl<sub>2</sub>, Ar, O<sub>2</sub>
 +
*Cl<sub>2</sub> available in CAIBE mode (Cl2 not entering ion gun) through a gas ring.
 
*RIBE (reactive gas entering ion gun during RF discharge) mode for all reactive gases
 
*RIBE (reactive gas entering ion gun during RF discharge) mode for all reactive gases
 
*Low 1 E -7 Torr ultimate chamber pressure, etch pressure ~1 E-4 Torr
 
*Low 1 E -7 Torr ultimate chamber pressure, etch pressure ~1 E-4 Torr
*15cm ion-gun with PBN neutralizer  
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*15cm ion-gun with PBN neutralizer
*Angled etch control from 0 degrees (normal incidence) to 75 degrees.  
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*Angled etch control from 0 degrees (normal incidence) to 75 degrees.
*Sample Rotated or fixed at controlled position for etching.  
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*Sample Rotated or fixed at controlled position for etching.
*Vb from 50V to over 1000V  
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*Vb from 50V to over 1000V
*Ib up to 500mA  
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*Ib up to 500mA
*He-backside cooling  
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*He-backside cooling
*Substrate temperature 5C to 300C  
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*Substrate temperature 5C to 300C
*Sample size from 6" wafer to pieces (using holders)  
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*Sample sizes:
 +
**6" wafer (no carrier needed)
 +
**4" wafer mount with backside Helium cooling ports
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**2" wafer mount with backside Helium cooling ports
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**35mm square pieces or smaller, mount with backside Helium cooling ports
 
*Clustered through vacuum chambers with ALD systems.
 
*Clustered through vacuum chambers with ALD systems.
 
*Masking material depends on material being etched and etch gas used
 
*Masking material depends on material being etched and etch gas used
  
[[File:Example.jpg]]=Documentation=
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==Recipes==
 +
Recipes can be found on the [https://wiki.nanotech.ucsb.edu/wiki/index.php/Other_Dry_Etching_Recipes#CAIBE_.28Oxford_Ion_Mill.29 '''CAIBE Recipes Page'''].
 +
 
 +
==Procedures & Documentation==
 +
* [//wiki.nanotech.ucsb.edu/wiki/images/5/52/Cluster_operating_instructions.pdf Cluster Operating Instructions] - same instructions as ALD, except for the '''following difference''':
 +
** ''Make sure to securely attach your samples to the platens with clips, since the holder will be angled and rotated!''  ''6-inch wafers can be loaded as-is.''
 +
 
 +
*[//wiki.nanotech.ucsb.edu/wiki/images/7/75/Ion_Beam_Etch_Overview_rev1.pdf Additional Documentation]

Revision as of 10:13, 19 November 2020

CAIBE (Oxford Ion Mill)
CAIBE.jpg
Tool Type Dry Etch
Location Bay 2
Supervisor Brian Lingg
Supervisor Phone (805) 893-8145
Supervisor E-Mail lingg_b@ucsb.edu
Description CAIBE (Chemically Assisted Ion Beam Etcher)
Manufacturer Oxford Instruments
Model Ionfab 300 Plus
Materials Various
Dry Etch Recipes
Sign up for this tool


About

This is an Oxford Instruments PlasmaLab 300 IBE/RIBE/CAIBE system used for ion beam etching of a variety of materials including metals, oxides, semiconductors. Ion beam etching (IBE) allows control of sidewall etch profiles by tilting and rotating the sample during the etch. Reactive chemistry ("Chemically Assisted Ion Beam Etching", CAIBE) can be used, when appropriate, to enhance the etch rate of materials, such as oxides, polymers, and semiconductors.

This system is used to physically ion beam etch noble and inert metals with Ar ion milling, and to etch other materials that react with chlorine, fluorine, or oxygen using a reactive ion beam. The ion beam is generated in a 15cm diameter 3-grid ion source manufactured by Oxford. The Ion beam voltage & current control the etch rate. Beam voltage (related to ion energy) affects the sputter yield (atoms etched per incident ion) and Ion beam current controls the flux of ions (number of ions in the beam). Etch rate should be roughly linear with beam current. Neutralizing electrons are generated by a plasma bridge neutralizer (PBN) so that samples are not charged by ions during the etch. Samples can be cooled to 5°C or heated to 300°C for etching. He back-side cooling is used to transfer heat from(to) the sample to(from) the cooled(heated) platen.

Cluster Configuration

The Ion Mill system is clustered with 2 Oxford ALD systems, allowing the process flexibility of etching followed by ALD passivation or metalization without breaking vacuum.

Detailed Specifications

  • Etch gases include: CF4, Cl2, Ar, O2
  • Cl2 available in CAIBE mode (Cl2 not entering ion gun) through a gas ring.
  • RIBE (reactive gas entering ion gun during RF discharge) mode for all reactive gases
  • Low 1 E -7 Torr ultimate chamber pressure, etch pressure ~1 E-4 Torr
  • 15cm ion-gun with PBN neutralizer
  • Angled etch control from 0 degrees (normal incidence) to 75 degrees.
  • Sample Rotated or fixed at controlled position for etching.
  • Vb from 50V to over 1000V
  • Ib up to 500mA
  • He-backside cooling
  • Substrate temperature 5C to 300C
  • Sample sizes:
    • 6" wafer (no carrier needed)
    • 4" wafer mount with backside Helium cooling ports
    • 2" wafer mount with backside Helium cooling ports
    • 35mm square pieces or smaller, mount with backside Helium cooling ports
  • Clustered through vacuum chambers with ALD systems.
  • Masking material depends on material being etched and etch gas used

Recipes

Recipes can be found on the CAIBE Recipes Page.

Procedures & Documentation

  • Cluster Operating Instructions - same instructions as ALD, except for the following difference:
    • Make sure to securely attach your samples to the platens with clips, since the holder will be angled and rotated! 6-inch wafers can be loaded as-is.