Atomic Layer Deposition Recipes
Revision as of 17:13, 28 August 2018 by John d (talk | contribs) (→ZrO deposition (ALD CHAMBER 3): removed unneeded comment about HfO (which is already in the HfO section))
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Atomic Layer Deposition (Oxford FlexAL)
Oxford FlexAL Chamber #1: Metals
Pt deposition (ALD CHAMBER 1)
- Recipe name: Ch1_TMCpPt+O3-300C
- Pt deposition rate ~ 0.5-0.6A/cyc
- recipe utilizes the ozone generator which must be first set to the following conditions:
- O2 flow = 250sccm
- O3 concentration = 15 wt%
- Conductivity data: (to be added)
Ru deposition (ALD CHAMBER 1)
- Recipe name: Ch1_Ex03Ru[HPbub]+O2-300C
- Ru deposition rate ~ 0.6-0.7A/cyc.
- Conductivity data: (to be added)
ZnO Deposition (ALD Chamber 1)
Slightly conductive film.
- Recipe name: Ch1_DEZ+H2O-200C
- ZnO deposition rate ≈ TBA
- resistivity ≈ TBA
ZnO:Al deposition (ALD CHAMBER 1)
Al-Doped ZnO for variable resisitivity.
- Recipe name: Ch1_DEZ/TMA+H2O-200C
- The recipe has TWO loops. The Outer loop determines final thickness. The Inner loop determines how much AlOx is doped into the film. Note that each full (outer-loop) cycle takes a long time due to this double-loop structure.
- Al dose fraction = 5% for lowest resistivity
- ZnO deposition rate ~ 1.7A/cyc
- resistivity ~ 4200uOhm.cm (390A film)
Oxford FlexAL Chamber #3: Dielectrics
Al2O3 deposition (ALD CHAMBER 3)
- Recipe name: Ch3_TMA+H2O-300C
- Al2O3 deposition rate ~ 1A/cyc
AlN deposition (ALD CHAMBER 3)
- Recipe name: Ch3_TMA+100W/20N*-300C
- AlN deposition rate ~ t.b.d.
- recipe utilizes a N* plasma @ 100W, 20mTorr pressure.
HfO2 deposition (ALD CHAMBER 3)
- Recipe name: Ch3_TEMAH+H2O-300C
- HfO2 deposition rate ~ 0.9-1.0A/cyc
- Note: deposition shows significant parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.
SiO2 deposition (ALD CHAMBER 3)
- Recipe name: Ch3_TDMAS+250W/O*-300C
- SiO2 deposition rate ~ 0.7-0.8A/cyc
- recipe utilizes an O* plasma @ 250W, 5mTorr pressure
ZrO2 deposition (ALD CHAMBER 3)
- Recipe name: Ch3_TEMAZ+H2O-300C
- ZrO2 deposition rate ~ 0.9-1.0A/cyc
- not directly characterized since results are basically the same as the HfO2 process above.
TiO2 deposition (ALD CHAMBER 3)
- Recipe name: Ch3_TDMAT+H2O-300C
- TiO2 deposition rate ~ 0.6A/cyc
- Note: deposition shows parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.
TiN deposition (ALD CHAMBER 3)
- Recipe name: Ch3_TDMAT+N*/H*-300C
- TiN deposition rate ~ 0.7A/cyc
- Conductivity data: (to be added soon)