Atomic Layer Deposition Recipes

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Atomic Layer Deposition (Oxford FlexAL)

Al₂O₃ deposition (ALD CHAMBER 3)

• Ch3_TMA+H2O-300C: Al2O3 deposition rate ~ 1A/cyc

AlN deposition (ALD CHAMBER 3)

• Ch3_TMA+100W/20N*-300C: AlN deposition rate ~ t.b.d.
• recipe utilizes a N* plasma @ 100W, 20mTorr pressure.

HfO₂ deposition (ALD CHAMBER 3)

• Ch3_TEMAH+H2O-300C: HfO2 deposition rate ~ 0.9-1.0A/cyc
• Note: deposition shows significant parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.

Pt deposition (ALD CHAMBER 1)

• Ch1_TMCpPt+O3-300C: Pt deposition rate ~ 0.5-0.6A/cyc
• recipe utilizes the ozone generator which must be first set to the following conditions: O2 flow = 250sccm, O3 concentration = 15 wt%
• Conductivity data: (to be added soon)

Ru deposition (ALD CHAMBER 1)

• Ch1_Ex03Ru[HPbub]+O2-300C: Ru deposition rate ~ 0.6-0.7A/cyc.
• Conductivity data: (to be added soon)

SiO₂ deposition (ALD CHAMBER 3)

• Ch3_TDMAS+250W/O*-300C: SiO2 deposition rate ~ 0.7-0.8A/cyc
• recipe utilizes an O* plasma @ 250W, 5mTorr pressure

ZnO:Al deposition (ALD CHAMBER 1)

• Ch1_DEZ/TMA+H2O-200C (Al dose fraction = 5% for lowest resistivity): ZnO deposition rate ~ 1.7A/cyc
• resistivity ~ 4200uOhm.cm (390A film)

ZrO₂ deposition (ALD CHAMBER 3)

• Ch3_TEMAZ+H2O-300C: ZrO2 deposition rate ~ 0.9-1.0A/cyc
• not directly characterized since results are basically the same as the HfO2 process above.
• as for the HfO2 process, deposition will exhibit significant parasitic growth unless long H2O purge/pump cycles are in place.

TiO₂ deposition (ALD CHAMBER 3)

• Ch3_TDMAT+H2O-300C: TiO₂ deposition rate ~ 0.6A/cyc
• Note: deposition shows parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.

TiN deposition (ALD CHAMBER 3)

• Ch3_TDMAT+N*/H*-300C: TiN deposition rate ~ 0.7A/cyc
• Conductivity data: (to be added soon)