Difference between revisions of "Atomic Layer Deposition Recipes"

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(→‎ZnO:Al deposition (ALD CHAMBER 1): described double-loop recipes)
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=== ZnO:Al deposition (ALD CHAMBER 1) ===
 
=== ZnO:Al deposition (ALD CHAMBER 1) ===
 
''Al-Doped ZnO for variable resisitivity.''
 
''Al-Doped ZnO for variable resisitivity.''
*Recipe name: '''''Ch1_DEZ/TMA+H2O-200C'''''  
+
*Recipe name: '''''Ch1_DEZ/TMA+H2O-200C'''''
 +
**''The recipe has TWO loops.  The Outer loop determines final thickness.  The Inner loop determines how much AlOx is doped into the film.  Note that each full  (outer-loop) cycle takes a long time due to this double-loop structure.''  
 
*Al dose fraction = 5% for lowest resistivity
 
*Al dose fraction = 5% for lowest resistivity
 
*ZnO deposition rate ~ 1.7A/cyc
 
*ZnO deposition rate ~ 1.7A/cyc

Revision as of 16:11, 28 August 2018

Back to Vacuum Deposition Recipes.

Atomic Layer Deposition (Oxford FlexAL)

Oxford FlexAL Chamber #1: Metals

Pt deposition (ALD CHAMBER 1)

  • Recipe name: Ch1_TMCpPt+O3-300C
  • Pt deposition rate ~ 0.5-0.6A/cyc
  • recipe utilizes the ozone generator which must be first set to the following conditions:
    • O2 flow = 250sccm
    • O3 concentration = 15 wt%
  • Conductivity data: (to be added)

Ru deposition (ALD CHAMBER 1)

  • Recipe name: Ch1_Ex03Ru[HPbub]+O2-300C
  • Ru deposition rate ~ 0.6-0.7A/cyc.
  • Conductivity data: (to be added)

ZnO Deposition (ALD Chamber 1)

Slightly conductive film.

  • Recipe name: Ch1_DEZ+H2O-200C
  • ZnO deposition rate ≈ TBA
  • resistivity ≈ TBA

ZnO:Al deposition (ALD CHAMBER 1)

Al-Doped ZnO for variable resisitivity.

  • Recipe name: Ch1_DEZ/TMA+H2O-200C
    • The recipe has TWO loops. The Outer loop determines final thickness. The Inner loop determines how much AlOx is doped into the film. Note that each full (outer-loop) cycle takes a long time due to this double-loop structure.
  • Al dose fraction = 5% for lowest resistivity
  • ZnO deposition rate ~ 1.7A/cyc
  • resistivity ~ 4200uOhm.cm (390A film)

Oxford FlexAL Chamber #3: Dielectrics

Al2O3 deposition (ALD CHAMBER 3)

  • Recipe name: Ch3_TMA+H2O-300C
  • Al2O3 deposition rate ~ 1A/cyc

AlN deposition (ALD CHAMBER 3)

  • Recipe name: Ch3_TMA+100W/20N*-300C
  • AlN deposition rate ~ t.b.d.
  • recipe utilizes a N* plasma @ 100W, 20mTorr pressure.

HfO2 deposition (ALD CHAMBER 3)

  • Recipe name: Ch3_TEMAH+H2O-300C
  • HfO2 deposition rate ~ 0.9-1.0A/cyc
  • Note: deposition shows significant parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.

SiO2 deposition (ALD CHAMBER 3)

  • Recipe name: Ch3_TDMAS+250W/O*-300C
  • SiO2 deposition rate ~ 0.7-0.8A/cyc
  • recipe utilizes an O* plasma @ 250W, 5mTorr pressure

ZrO2 deposition (ALD CHAMBER 3)

  • Recipe name: Ch3_TEMAZ+H2O-300C
  • ZrO2 deposition rate ~ 0.9-1.0A/cyc
  • not directly characterized since results are basically the same as the HfO2 process above.
  • as for the HfO2 process, deposition will exhibit significant parasitic growth unless long H2O purge/pump cycles are in place.

TiO2 deposition (ALD CHAMBER 3)

  • Recipe name: Ch3_TDMAT+H2O-300C
  • TiO2 deposition rate ~ 0.6A/cyc
  • Note: deposition shows parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.

TiN deposition (ALD CHAMBER 3)

  • Recipe name: Ch3_TDMAT+N*/H*-300C
  • TiN deposition rate ~ 0.7A/cyc
  • Conductivity data: (to be added soon)