Difference between revisions of "Atomic Layer Deposition Recipes"
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(split into Chamber 1 & Chamber 3) |
(split up bullets, clarified recipe name, formatting) |
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=== Pt deposition (ALD CHAMBER 1) === |
=== Pt deposition (ALD CHAMBER 1) === |
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| − | *Ch1_TMCpPt+O3-300C |
+ | *Recipe name: '''''Ch1_TMCpPt+O3-300C''''' |
*Pt deposition rate ~ 0.5-0.6A/cyc |
*Pt deposition rate ~ 0.5-0.6A/cyc |
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| − | *recipe utilizes the ozone generator which must be first set to the following conditions: |
+ | *recipe utilizes the ozone generator which must be first set to the following conditions: |
| + | **O<sub>2</sub> flow = 250sccm |
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| ⚫ | |||
| + | **O<sub>3</sub> concentration = 15 wt% |
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| ⚫ | |||
=== Ru deposition (ALD CHAMBER 1) === |
=== Ru deposition (ALD CHAMBER 1) === |
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| − | * Ch1_Ex03Ru[HPbub]+O2-300C |
+ | * Recipe name: '''''Ch1_Ex03Ru[HPbub]+O2-300C''''' |
* Ru deposition rate ~ 0.6-0.7A/cyc. |
* Ru deposition rate ~ 0.6-0.7A/cyc. |
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| − | * Conductivity data: (to be added |
+ | * Conductivity data: (to be added) |
=== ZnO:Al deposition (ALD CHAMBER 1) === |
=== ZnO:Al deposition (ALD CHAMBER 1) === |
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''Al-Doped ZnO for variable resisitivity.'' |
''Al-Doped ZnO for variable resisitivity.'' |
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| − | *Ch1_DEZ/TMA+H2O-200C |
+ | *Recipe name: '''''Ch1_DEZ/TMA+H2O-200C''''' |
| + | *Al dose fraction = 5% for lowest resistivity |
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*ZnO deposition rate ~ 1.7A/cyc |
*ZnO deposition rate ~ 1.7A/cyc |
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*resistivity ~ 4200uOhm.cm (390A film) |
*resistivity ~ 4200uOhm.cm (390A film) |
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===Al{{sub|2}}O{{sub|3}} deposition (ALD CHAMBER 3)=== |
===Al{{sub|2}}O{{sub|3}} deposition (ALD CHAMBER 3)=== |
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| − | *Ch3_TMA+H2O-300C |
+ | *Recipe name: '''''Ch3_TMA+H2O-300C''''' |
| + | *Al<sub>2</sub>O<sub>3</sub> deposition rate ~ 1A/cyc |
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===AlN deposition (ALD CHAMBER 3)=== |
===AlN deposition (ALD CHAMBER 3)=== |
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| − | *Ch3_TMA+100W/20N*-300C |
+ | *Recipe name: '''''Ch3_TMA+100W/20N*-300C''''' |
| + | *AlN deposition rate ~ t.b.d. |
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*recipe utilizes a N* plasma @ 100W, 20mTorr pressure. |
*recipe utilizes a N* plasma @ 100W, 20mTorr pressure. |
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===HfO{{sub|2}} deposition (ALD CHAMBER 3)=== |
===HfO{{sub|2}} deposition (ALD CHAMBER 3)=== |
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| − | *Ch3_TEMAH+H2O-300C |
+ | *Recipe name: '''''Ch3_TEMAH+H2O-300C''''' |
| + | *HfO<sub>2</sub> deposition rate ~ 0.9-1.0A/cyc |
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| − | *Note: deposition shows significant parasitic growth (via CVD channel) if |
+ | *Note: deposition shows significant parasitic growth (via CVD channel) if H<sub>2</sub>O purge/pump times are not sufficient. |
===SiO{{sub|2}} deposition (ALD CHAMBER 3)=== |
===SiO{{sub|2}} deposition (ALD CHAMBER 3)=== |
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| − | *Ch3_TDMAS+250W/O*-300C |
+ | *Recipe name: '''''Ch3_TDMAS+250W/O*-300C''''' |
| + | *SiO<sub>2</sub> deposition rate ~ 0.7-0.8A/cyc |
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*recipe utilizes an O* plasma @ 250W, 5mTorr pressure |
*recipe utilizes an O* plasma @ 250W, 5mTorr pressure |
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===ZrO{{sub|2}} deposition (ALD CHAMBER 3)=== |
===ZrO{{sub|2}} deposition (ALD CHAMBER 3)=== |
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| − | *Ch3_TEMAZ+H2O-300C |
+ | *Recipe name: '''''Ch3_TEMAZ+H2O-300C''''' |
| + | *ZrO<sub>2</sub> deposition rate ~ 0.9-1.0A/cyc |
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| − | *not directly characterized since results are basically the same as the |
+ | *not directly characterized since results are basically the same as the HfO<sub>2</sub> process above. |
| − | *as for the |
+ | *as for the HfO<sub>2</sub> process, deposition will exhibit significant parasitic growth unless long H<sub>2</sub>O purge/pump cycles are in place. |
===TiO{{sub|2}} deposition (ALD CHAMBER 3)=== |
===TiO{{sub|2}} deposition (ALD CHAMBER 3)=== |
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| − | *Ch3_TDMAT+H2O-300C |
+ | *Recipe name: '''''Ch3_TDMAT+H2O-300C''''' |
| + | *TiO{{sub|2}} deposition rate ~ 0.6A/cyc |
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| − | *Note: deposition shows parasitic growth (via CVD channel) if |
+ | *Note: deposition shows parasitic growth (via CVD channel) if H<sub>2</sub>O purge/pump times are not sufficient. |
===TiN deposition (ALD CHAMBER 3)=== |
===TiN deposition (ALD CHAMBER 3)=== |
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| − | *Ch3_TDMAT+N*/H*-300C |
+ | *Recipe name: '''''Ch3_TDMAT+N*/H*-300C''''' |
| + | *TiN deposition rate ~ 0.7A/cyc |
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*Conductivity data: (to be added soon) |
*Conductivity data: (to be added soon) |
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Revision as of 16:39, 17 July 2018
Back to Vacuum Deposition Recipes.
Atomic Layer Deposition (Oxford FlexAL)
Oxford FlexAL Chamber #1: Metals
Pt deposition (ALD CHAMBER 1)
- Recipe name: Ch1_TMCpPt+O3-300C
- Pt deposition rate ~ 0.5-0.6A/cyc
- recipe utilizes the ozone generator which must be first set to the following conditions:
- O2 flow = 250sccm
- O3 concentration = 15 wt%
- Conductivity data: (to be added)
Ru deposition (ALD CHAMBER 1)
- Recipe name: Ch1_Ex03Ru[HPbub]+O2-300C
- Ru deposition rate ~ 0.6-0.7A/cyc.
- Conductivity data: (to be added)
ZnO:Al deposition (ALD CHAMBER 1)
Al-Doped ZnO for variable resisitivity.
- Recipe name: Ch1_DEZ/TMA+H2O-200C
- Al dose fraction = 5% for lowest resistivity
- ZnO deposition rate ~ 1.7A/cyc
- resistivity ~ 4200uOhm.cm (390A film)
Oxford FlexAL Chamber #3: Dielectrics
Al2O3 deposition (ALD CHAMBER 3)
- Recipe name: Ch3_TMA+H2O-300C
- Al2O3 deposition rate ~ 1A/cyc
AlN deposition (ALD CHAMBER 3)
- Recipe name: Ch3_TMA+100W/20N*-300C
- AlN deposition rate ~ t.b.d.
- recipe utilizes a N* plasma @ 100W, 20mTorr pressure.
HfO2 deposition (ALD CHAMBER 3)
- Recipe name: Ch3_TEMAH+H2O-300C
- HfO2 deposition rate ~ 0.9-1.0A/cyc
- Note: deposition shows significant parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.
SiO2 deposition (ALD CHAMBER 3)
- Recipe name: Ch3_TDMAS+250W/O*-300C
- SiO2 deposition rate ~ 0.7-0.8A/cyc
- recipe utilizes an O* plasma @ 250W, 5mTorr pressure
ZrO2 deposition (ALD CHAMBER 3)
- Recipe name: Ch3_TEMAZ+H2O-300C
- ZrO2 deposition rate ~ 0.9-1.0A/cyc
- not directly characterized since results are basically the same as the HfO2 process above.
- as for the HfO2 process, deposition will exhibit significant parasitic growth unless long H2O purge/pump cycles are in place.
TiO2 deposition (ALD CHAMBER 3)
- Recipe name: Ch3_TDMAT+H2O-300C
- TiO2 deposition rate ~ 0.6A/cyc
- Note: deposition shows parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.
TiN deposition (ALD CHAMBER 3)
- Recipe name: Ch3_TDMAT+N*/H*-300C
- TiN deposition rate ~ 0.7A/cyc
- Conductivity data: (to be added soon)