Difference between revisions of "Atomic Layer Deposition Recipes"

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(split into Chamber 1 & Chamber 3)
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{{recipes|Vacuum Deposition}}
 
{{recipes|Vacuum Deposition}}
 
=[[Atomic Layer Deposition (Oxford FlexAL)]]=
 
=[[Atomic Layer Deposition (Oxford FlexAL)]]=
==Al{{sub|2}}O{{sub|3}} deposition (ALD CHAMBER 3)==
+
 
 +
== Oxford FlexAL Chamber #1: Metals ==
 +
 
 +
=== Pt deposition (ALD CHAMBER 1) ===
 +
*Ch1_TMCpPt+O3-300C
 +
*Pt deposition rate ~ 0.5-0.6A/cyc
 +
*recipe utilizes the ozone generator which must be first set to the following conditions: O2 flow = 250sccm, O3 concentration = 15 wt%
 +
*Conductivity data: (to be added soon)
 +
 
 +
=== Ru deposition (ALD CHAMBER 1) ===
 +
* Ch1_Ex03Ru[HPbub]+O2-300C
 +
* Ru deposition rate ~ 0.6-0.7A/cyc.
 +
* Conductivity data: (to be added soon)
 +
 
 +
=== ZnO:Al deposition (ALD CHAMBER 1) ===
 +
''Al-Doped ZnO for variable resisitivity.''
 +
*Ch1_DEZ/TMA+H2O-200C (Al dose fraction = 5% for lowest resistivity)
 +
*ZnO deposition rate ~ 1.7A/cyc
 +
*resistivity ~ 4200uOhm.cm (390A film)
 +
 
 +
== Oxford FlexAL Chamber #3: Dielectrics ==
 +
 
 +
===Al{{sub|2}}O{{sub|3}} deposition (ALD CHAMBER 3)===
  
 
*Ch3_TMA+H2O-300C: Al2O3 deposition rate ~ 1A/cyc
 
*Ch3_TMA+H2O-300C: Al2O3 deposition rate ~ 1A/cyc
  
==AlN deposition (ALD CHAMBER 3)==
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===AlN deposition (ALD CHAMBER 3)===
 
*Ch3_TMA+100W/20N*-300C: AlN deposition rate ~ t.b.d.
 
*Ch3_TMA+100W/20N*-300C: AlN deposition rate ~ t.b.d.
 
*recipe utilizes a N* plasma @ 100W, 20mTorr pressure.
 
*recipe utilizes a N* plasma @ 100W, 20mTorr pressure.
  
==HfO{{sub|2}} deposition (ALD CHAMBER 3)==
+
===HfO{{sub|2}} deposition (ALD CHAMBER 3)===
 
*Ch3_TEMAH+H2O-300C: HfO2 deposition rate ~ 0.9-1.0A/cyc
 
*Ch3_TEMAH+H2O-300C: HfO2 deposition rate ~ 0.9-1.0A/cyc
 
*Note: deposition shows significant parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.
 
*Note: deposition shows significant parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.
  
==Pt deposition (ALD CHAMBER 1)==
+
===SiO{{sub|2}} deposition (ALD CHAMBER 3)===
*Ch1_TMCpPt+O3-300C: Pt deposition rate ~ 0.5-0.6A/cyc
 
*recipe utilizes the ozone generator which must be first set to the following conditions: O2 flow = 250sccm, O3 concentration = 15 wt%
 
*Conductivity data: (to be added soon)
 
 
 
== Ru deposition (ALD CHAMBER 1) ==
 
* Ch1_Ex03Ru[HPbub]+O2-300C: Ru deposition rate ~ 0.6-0.7A/cyc.
 
* Conductivity data: (to be added soon)
 
 
 
==SiO{{sub|2}} deposition (ALD CHAMBER 3)==
 
 
*Ch3_TDMAS+250W/O*-300C: SiO2 deposition rate ~ 0.7-0.8A/cyc
 
*Ch3_TDMAS+250W/O*-300C: SiO2 deposition rate ~ 0.7-0.8A/cyc
 
*recipe utilizes an O* plasma @ 250W, 5mTorr pressure
 
*recipe utilizes an O* plasma @ 250W, 5mTorr pressure
  
==ZnO:Al deposition (ALD CHAMBER 1)==
+
===ZrO{{sub|2}} deposition (ALD CHAMBER 3)===
*Ch1_DEZ/TMA+H2O-200C (Al dose fraction = 5% for lowest resistivity): ZnO deposition rate ~ 1.7A/cyc
 
*resistivity ~ 4200uOhm.cm (390A film)
 
 
 
==ZrO{{sub|2}} deposition (ALD CHAMBER 3)==
 
 
*Ch3_TEMAZ+H2O-300C: ZrO2 deposition rate ~ 0.9-1.0A/cyc
 
*Ch3_TEMAZ+H2O-300C: ZrO2 deposition rate ~ 0.9-1.0A/cyc
 
*not directly characterized since results are basically the same as the HfO2 process above.
 
*not directly characterized since results are basically the same as the HfO2 process above.
 
*as for the HfO2 process, deposition will exhibit significant parasitic growth unless long H2O purge/pump cycles are in place.
 
*as for the HfO2 process, deposition will exhibit significant parasitic growth unless long H2O purge/pump cycles are in place.
  
==TiO{{sub|2}} deposition (ALD CHAMBER 3)==
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===TiO{{sub|2}} deposition (ALD CHAMBER 3)===
 
*Ch3_TDMAT+H2O-300C: TiO{{sub|2}} deposition rate ~ 0.6A/cyc
 
*Ch3_TDMAT+H2O-300C: TiO{{sub|2}} deposition rate ~ 0.6A/cyc
 
*Note: deposition shows parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.
 
*Note: deposition shows parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.
  
==TiN deposition (ALD CHAMBER 3)==
+
===TiN deposition (ALD CHAMBER 3)===
 
*Ch3_TDMAT+N*/H*-300C: TiN deposition rate ~ 0.7A/cyc
 
*Ch3_TDMAT+N*/H*-300C: TiN deposition rate ~ 0.7A/cyc
 
*Conductivity data: (to be added soon)
 
*Conductivity data: (to be added soon)

Revision as of 15:34, 17 July 2018

Back to Vacuum Deposition Recipes.

Atomic Layer Deposition (Oxford FlexAL)

Oxford FlexAL Chamber #1: Metals

Pt deposition (ALD CHAMBER 1)

  • Ch1_TMCpPt+O3-300C
  • Pt deposition rate ~ 0.5-0.6A/cyc
  • recipe utilizes the ozone generator which must be first set to the following conditions: O2 flow = 250sccm, O3 concentration = 15 wt%
  • Conductivity data: (to be added soon)

Ru deposition (ALD CHAMBER 1)

  • Ch1_Ex03Ru[HPbub]+O2-300C
  • Ru deposition rate ~ 0.6-0.7A/cyc.
  • Conductivity data: (to be added soon)

ZnO:Al deposition (ALD CHAMBER 1)

Al-Doped ZnO for variable resisitivity.

  • Ch1_DEZ/TMA+H2O-200C (Al dose fraction = 5% for lowest resistivity)
  • ZnO deposition rate ~ 1.7A/cyc
  • resistivity ~ 4200uOhm.cm (390A film)

Oxford FlexAL Chamber #3: Dielectrics

Al2O3 deposition (ALD CHAMBER 3)

  • Ch3_TMA+H2O-300C: Al2O3 deposition rate ~ 1A/cyc

AlN deposition (ALD CHAMBER 3)

  • Ch3_TMA+100W/20N*-300C: AlN deposition rate ~ t.b.d.
  • recipe utilizes a N* plasma @ 100W, 20mTorr pressure.

HfO2 deposition (ALD CHAMBER 3)

  • Ch3_TEMAH+H2O-300C: HfO2 deposition rate ~ 0.9-1.0A/cyc
  • Note: deposition shows significant parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.

SiO2 deposition (ALD CHAMBER 3)

  • Ch3_TDMAS+250W/O*-300C: SiO2 deposition rate ~ 0.7-0.8A/cyc
  • recipe utilizes an O* plasma @ 250W, 5mTorr pressure

ZrO2 deposition (ALD CHAMBER 3)

  • Ch3_TEMAZ+H2O-300C: ZrO2 deposition rate ~ 0.9-1.0A/cyc
  • not directly characterized since results are basically the same as the HfO2 process above.
  • as for the HfO2 process, deposition will exhibit significant parasitic growth unless long H2O purge/pump cycles are in place.

TiO2 deposition (ALD CHAMBER 3)

  • Ch3_TDMAT+H2O-300C: TiO2 deposition rate ~ 0.6A/cyc
  • Note: deposition shows parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.

TiN deposition (ALD CHAMBER 3)

  • Ch3_TDMAT+N*/H*-300C: TiN deposition rate ~ 0.7A/cyc
  • Conductivity data: (to be added soon)