Difference between revisions of "Atomic Layer Deposition Recipes"
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{{recipes|Vacuum Deposition}} |
{{recipes|Vacuum Deposition}} |
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=[[Atomic Layer Deposition (Oxford FlexAL)]]= |
=[[Atomic Layer Deposition (Oxford FlexAL)]]= |
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| − | ==Al{{sub|2}}O{{sub|3}} deposition (ALD)== |
+ | ==Al{{sub|2}}O{{sub|3}} deposition (ALD CHAMBER 3)== |
*{{fl|ALD-Al2O3-300-Recipe.pdf|Al{{sub|2}}O{{sub|3}} 300}} |
*{{fl|ALD-Al2O3-300-Recipe.pdf|Al{{sub|2}}O{{sub|3}} 300}} |
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*{{fl|ALD-Al2O3-100-Recipe.pdf|Al{{sub|2}}O{{sub|3}} 100}} |
*{{fl|ALD-Al2O3-100-Recipe.pdf|Al{{sub|2}}O{{sub|3}} 100}} |
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| − | ==AlN deposition (ALD)== |
+ | ==AlN deposition (ALD CHAMBER 3)== |
*{{fl|ALD-AlN-300-recipe.pdf|AlN 300}} |
*{{fl|ALD-AlN-300-recipe.pdf|AlN 300}} |
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| − | ==HfO{{sub|2}} deposition (ALD)== |
+ | ==HfO{{sub|2}} deposition (ALD CHAMBER 3)== |
*{{fl|ALD-HfO2-100-recipe.pdf|HfO{{sub|2}} 100}} |
*{{fl|ALD-HfO2-100-recipe.pdf|HfO{{sub|2}} 100}} |
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*{{fl|ALD-HfO2-300-recipe.pdf|HfO{{sub|2}} 300}} |
*{{fl|ALD-HfO2-300-recipe.pdf|HfO{{sub|2}} 300}} |
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| − | ==Pt deposition (ALD)== |
+ | ==Pt deposition (ALD CHAMBER 1)== |
(Platinum) |
(Platinum) |
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| + | *Ch1_TMCpPt+O3-300C: Pt deposition rate ~ 0.5-0.6A/cyc |
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| − | *To be added, recipe available. Contact [[Bill Mitchell]]. |
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| + | *recipe utilizes the ozone generator which must be first set to the following conditions: O2 flow = 250sccm, O3 concentration = 15 wt% |
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| + | *Conductivity data: (to be added soon) |
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| − | == Ru (ALD) == |
+ | == Ru deposition (ALD CHAMBER 1) == |
(Ruthenium) |
(Ruthenium) |
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| + | * Ch1_Ex03Ru[HPbub]+O2-300C: Ru deposition rate ~ 0.65A/cyc. |
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| − | * To be added, recipe available. Contact [[Bill Mitchell]]. |
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| + | * Conductivity data: (to be added soon) |
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| − | ==SiO{{sub|2}} deposition (ALD)== |
+ | ==SiO{{sub|2}} deposition (ALD CHAMBER 3)== |
*{{fl|ALD-SiO2-100-recipe.pdf|SiO{{sub|2}} 100}} |
*{{fl|ALD-SiO2-100-recipe.pdf|SiO{{sub|2}} 100}} |
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*{{fl|ALD-SiO2-300-recipe.pdf|SiO{{sub|2}} 300}} |
*{{fl|ALD-SiO2-300-recipe.pdf|SiO{{sub|2}} 300}} |
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| − | ==ZnO deposition (ALD)== |
+ | ==ZnO deposition (ALD CHAMBER 1)== |
| + | *Ch1_DEZ/TMA+H2O-200C (Al dose fraction = 5%): ZnO deposition rate ~ 1.7A/cyc, resistivity ~ 4200uOhm.cm (390A film) |
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| − | *Need Data Al:ZnO |
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| − | ==ZrO{{sub|2}} deposition (ALD)== |
+ | ==ZrO{{sub|2}} deposition (ALD CHAMBER 3)== |
*{{fl|ALD-ZrO2-300-recipe.pdf|ZrO{{sub|2}} 300}} |
*{{fl|ALD-ZrO2-300-recipe.pdf|ZrO{{sub|2}} 300}} |
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| − | ==TiO{{sub|2}} deposition (ALD)== |
+ | ==TiO{{sub|2}} deposition (ALD CHAMBER 3)== |
| + | *Ch3_TDMAT+H2O-300C: TiO{{sub|2}} deposition rate ~ 0.6A/cyc |
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| − | *TiO{{sub|2}} 200 recipe '''WJM_TDMAT_H2O_r2''' water dose 1s (pdf file to be added)gives grow rate 0.9 A/cycle as measured by ellipsometer |
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| + | *Note: deposition shows parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient. |
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| − | ==TiN deposition (ALD)== |
+ | ==TiN deposition (ALD CHAMBER 3)== |
| + | *Ch3_TDMAT+N*/H*-300C: TiN deposition rate ~ 0.7A/cyc |
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| − | *To be added, recipe available. Contact [[Bill Mitchell]]. |
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| + | *Conductivity data: (to be added soon) |
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| − | *Conductive |
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Revision as of 17:35, 9 May 2018
Back to Vacuum Deposition Recipes.
Atomic Layer Deposition (Oxford FlexAL)
Al2O3 deposition (ALD CHAMBER 3)
AlN deposition (ALD CHAMBER 3)
HfO2 deposition (ALD CHAMBER 3)
Pt deposition (ALD CHAMBER 1)
(Platinum)
- Ch1_TMCpPt+O3-300C: Pt deposition rate ~ 0.5-0.6A/cyc
- recipe utilizes the ozone generator which must be first set to the following conditions: O2 flow = 250sccm, O3 concentration = 15 wt%
- Conductivity data: (to be added soon)
Ru deposition (ALD CHAMBER 1)
(Ruthenium)
- Ch1_Ex03Ru[HPbub]+O2-300C: Ru deposition rate ~ 0.65A/cyc.
- Conductivity data: (to be added soon)
SiO2 deposition (ALD CHAMBER 3)
ZnO deposition (ALD CHAMBER 1)
- Ch1_DEZ/TMA+H2O-200C (Al dose fraction = 5%): ZnO deposition rate ~ 1.7A/cyc, resistivity ~ 4200uOhm.cm (390A film)
ZrO2 deposition (ALD CHAMBER 3)
TiO2 deposition (ALD CHAMBER 3)
- Ch3_TDMAT+H2O-300C: TiO2 deposition rate ~ 0.6A/cyc
- Note: deposition shows parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.
TiN deposition (ALD CHAMBER 3)
- Ch3_TDMAT+N*/H*-300C: TiN deposition rate ~ 0.7A/cyc
- Conductivity data: (to be added soon)