Difference between revisions of "Atomic Layer Deposition Recipes"

From UCSB Nanofab Wiki
Jump to navigation Jump to search
(→‎Al O  deposition (ALD CHAMBER 3): converted to regular subscripts, indented each recipe param)
(→‎Atomic Layer Deposition (Oxford FlexAL): Recipe info on Plasma, Ratios)
 
(10 intermediate revisions by 2 users not shown)
Line 1: Line 1:
 
{{recipes|Vacuum Deposition}}
 
{{recipes|Vacuum Deposition}}
 
=[[Atomic Layer Deposition (Oxford FlexAL)]]=
 
=[[Atomic Layer Deposition (Oxford FlexAL)]]=
 +
 +
== Oxford FlexAL Process Notes ==
 +
 +
=== Temperature ===
 +
''To Be Added: effect of varying temeprature''
 +
 +
=== Plasma ===
 +
'''''O*''''' or '''''N*''''' mean Oxygen/Nitrogen plasma, respectively.
 +
 +
The plasma processes on this tool will run considerably faster than purely thermal proceses, because the reaction time is faster. Also, the O* plasma may reduce carbon contaminants from the organic precursors.
 +
 +
The drawback is that the plasma shutter, which opens/closes between plasma steps, gets coated in materials and can cause higher particle counts.
 +
 +
=== Ozone ===
 +
'''''O3''''' indicates a recipe using the Ozone generator for reaction.
 +
 +
''More info to be added''
 +
 +
=== Varying Atomic Ratios ===
 +
For some recipes such as TiN, there are two loops in the recipe.  The outermost loop controls the total thickness of the film, the inner loop controls the ratio between the two elements.  Contact the superviosr for more detailed info.
  
 
== Oxford FlexAL Chamber #1: Metals ==
 
== Oxford FlexAL Chamber #1: Metals ==
 
+
'''Maximum 30nm deposition thickness!''' (ask [[Brian Lingg|Tool Supervisor]] if needed.)
 
=== Pt deposition (ALD CHAMBER 1) ===
 
=== Pt deposition (ALD CHAMBER 1) ===
 
*Recipe name: '''''Ch1_TMCpPt+O3-300C'''''
 
*Recipe name: '''''Ch1_TMCpPt+O3-300C'''''
*Pt deposition rate ~ 0.5-0.6A/cyc
+
**Pt deposition rate ~ 0.5-0.6 A/cyc
*recipe utilizes the ozone generator which must be first set to the following conditions:
+
**Conductivity data: (to be added)
**O<sub>2</sub> flow = 250sccm
+
**recipe utilizes the ozone generator which must be first set to the following conditions:
**O<sub>3</sub> concentration = 15 wt%
+
***O<sub>2</sub> flow = 250sccm
*Conductivity data: (to be added)
+
***O<sub>3</sub> concentration = 15 wt%
 +
**300°C deposition
 +
*Recipe name: '''''CH1-TMCpPt+250W/O*-300C'''''
 +
**Uses Oxygen plasma
 +
**300°C deposition
  
 
=== Ru deposition (ALD CHAMBER 1) ===
 
=== Ru deposition (ALD CHAMBER 1) ===
Line 16: Line 40:
 
* Ru deposition rate ~ 0.6-0.7A/cyc.
 
* Ru deposition rate ~ 0.6-0.7A/cyc.
 
* Conductivity data: (to be added)
 
* Conductivity data: (to be added)
 +
* 300°C, O2 gas reaction
  
 
=== ZnO Deposition (ALD Chamber 1) ===
 
=== ZnO Deposition (ALD Chamber 1) ===
 
''Conductive film.''
 
''Conductive film.''
 
* Recipe name: '''''Ch1_DEZ+H2O-200C'''''
 
* Recipe name: '''''Ch1_DEZ+H2O-200C'''''
* ZnO deposition rate ≈ ''TBA''
+
* ZnO deposition rate ≈ 1.6 A/cycle
 
*resistivity ≈ ''TBA''
 
*resistivity ≈ ''TBA''
 +
*200°C Deposition, Water reaction
  
 
=== ZnO:Al deposition (ALD CHAMBER 1) ===
 
=== ZnO:Al deposition (ALD CHAMBER 1) ===
Line 32: Line 58:
  
 
== Oxford FlexAL Chamber #3: Dielectrics ==
 
== Oxford FlexAL Chamber #3: Dielectrics ==
 +
'''Maximum 30nm deposition thickness!''' (ask [[Brian Lingg|Tool Supervisor]] if needed.)
  
 
===Al{{sub|2}}O{{sub|3}} deposition (ALD CHAMBER 3)===
 
===Al{{sub|2}}O{{sub|3}} deposition (ALD CHAMBER 3)===
  
*Recipe name: '''''Ch3_TMA+H2O-300C'''''
+
*Recipe name: '''''CH3-TMA+H2O-<u>300C</u>'''''
 
**Al<sub>2</sub>O<sub>3</sub> deposition rate ~ 1A/cyc
 
**Al<sub>2</sub>O<sub>3</sub> deposition rate ~ 1A/cyc
*Recipe Name: CH3_TMA+H2O-XYZ?
+
**300°C Dep., Water reaction
**TBD
+
**This is considered the standard recipe for ALD
 +
**Temperature variations: 300°C (std.), 250°C, 200°C, 150°C, 120°C
 +
*Recipe Name: '''''CH3-TMA+250W/O*-300C'''''
 +
**Similar deposition rate
 +
**Oxygen Plasma reaction instead of H2O
 +
**Lower carbon content,  approx. <u>1.5–2x faster deposition rate.</u>
 +
**Temperature variations: 300°C (std.), 200°C, 120°C
 +
*Recipe Name: '''''CH3-TMA+O3/200mT-300C'''''
 +
**Similar dep. rate
 +
**Ozone (O<sub>3</sub>) reactant, experimental
  
 
===AlN deposition (ALD CHAMBER 3)===
 
===AlN deposition (ALD CHAMBER 3)===
*Recipe name: '''''Ch3_TMA+100W/20N*-300C'''''
+
*Recipe name: '''''CH3-TMA+100W/N*-300C'''''
 
**AlN deposition rate ~ t.b.d.
 
**AlN deposition rate ~ t.b.d.
 
**Recipe utilizes a N* plasma @ 100W, 20mTorr pressure.
 
**Recipe utilizes a N* plasma @ 100W, 20mTorr pressure.
 +
**Temperature Variations: 300°C Dep. (std.), 200*C, 120°C
 +
**Power variations: 300W, 400W (at 300°C)
 +
**Nitrogen/Hydrogen variations: "30N*/30H*" at 200*C and 300°C
  
 
===HfO{{sub|2}} deposition (ALD CHAMBER 3)===
 
===HfO{{sub|2}} deposition (ALD CHAMBER 3)===
*Recipe name: '''''Ch3_TEMAH+H2O-300C'''''
+
*Recipe name: '''''CH3-TEMAH+H2O-300C'''''
 
**HfO<sub>2</sub> deposition rate ~ 0.9-1.0A/cyc
 
**HfO<sub>2</sub> deposition rate ~ 0.9-1.0A/cyc
 
**Note: deposition shows significant parasitic growth (via CVD channel) if H<sub>2</sub>O purge/pump times are not sufficient.
 
**Note: deposition shows significant parasitic growth (via CVD channel) if H<sub>2</sub>O purge/pump times are not sufficient.
 +
**Temperature variations: 300°C (std.), 250°C, 200°C, 150°C, 120°C
 +
*Recipe name: '''''CH3-TEMAH+250W/O*-300C'''''
 +
**Uses Oxygen plasma reactant instead of H<sub>2</sub>O
 +
*Recipe name: '''''CH3-TEMAH+O3/100mT-300C'''''
 +
**Uses Ozone (O<sub>3</sub>) for reactant instead of H<sub>2</sub>O
  
 
===SiO{{sub|2}} deposition (ALD CHAMBER 3)===
 
===SiO{{sub|2}} deposition (ALD CHAMBER 3)===
*Recipe name: '''''Ch3_TDMAS+250W/O*-300C'''''
+
*Recipe name: '''''CH3-TDMAS+250W/O*-300C'''''
 
**SiO<sub>2</sub> deposition rate ~ 0.7-0.8A/cyc
 
**SiO<sub>2</sub> deposition rate ~ 0.7-0.8A/cyc
**Recipe utilizes an O* plasma @ 250W, 5mTorr pressure
+
**Recipe utilizes an O* plasma @ 250W, 5mTorr pressure, 300°C Temp.
 +
**Temperature variations: 300*C (std.), 250°C, 230°C, 200°C, 150°C, 120°C
 +
*Recipe name: '''''CH3-TDMAS+O3/200mT-300C'''''
 +
**Uses Ozone (O<sub>3</sub>) for reactant instead of H<sub>2</sub>O
  
 
===ZrO{{sub|2}} deposition (ALD CHAMBER 3)===
 
===ZrO{{sub|2}} deposition (ALD CHAMBER 3)===
*Recipe name: '''''Ch3_TEMAZ+H2O-300C'''''
+
*Recipe name: '''''CH3-TEMAZ+H2O-300C'''''
 
**ZrO<sub>2</sub> deposition rate ~ 0.9-1.0A/cyc
 
**ZrO<sub>2</sub> deposition rate ~ 0.9-1.0A/cyc
 
**Not directly characterized since results are basically the same as the HfO<sub>2</sub> process above.
 
**Not directly characterized since results are basically the same as the HfO<sub>2</sub> process above.
 +
**Temperature variations: 300°C (std.), 200°C
 +
*Recipe name: '''''CH3-TEMAZ+250W/O*-300C'''''
 +
**Uses Oxygen plasma reactant instead of H<sub>2</sub>O
 +
*Recipe name: '''''CH3-TEMAZ+O3/100mT-300C'''''
 +
**Uses Ozone (O<sub>3</sub>) for reactant instead of H<sub>2</sub>O
  
 
===TiO{{sub|2}} deposition (ALD CHAMBER 3)===
 
===TiO{{sub|2}} deposition (ALD CHAMBER 3)===
*Recipe name: '''''Ch3_TDMAT+H2O-300C'''''
+
*Recipe name: '''''CH3-TDMAT+H2O-300C'''''
 
**TiO<sub>2</sub> deposition rate ~ 0.6A/cyc
 
**TiO<sub>2</sub> deposition rate ~ 0.6A/cyc
 
**Note: deposition shows parasitic growth (via CVD channel) if H<sub>2</sub>O purge/pump times are not sufficient.
 
**Note: deposition shows parasitic growth (via CVD channel) if H<sub>2</sub>O purge/pump times are not sufficient.
 +
**Temperature variations: 300°C (std.), 200°C, 120*C
 +
*Recipe name: '''''CH3-TDMAT+250W/O*-300C'''''
 +
**Uses Oxygen plasma reactant instead of H<sub>2</sub>O
  
 
===TiN deposition (ALD CHAMBER 3)===
 
===TiN deposition (ALD CHAMBER 3)===
*Recipe name: '''''Ch3_TDMAT+N*/H*-300C'''''
+
*Recipe name: '''''CH3-TDMAT+400W/12N*/4H*-300C'''''
 
**TiN deposition rate ~ 0.7A/cyc
 
**TiN deposition rate ~ 0.7A/cyc
 
**Conductivity data: (to be added)
 
**Conductivity data: (to be added)
 +
**Uses Plasma of N2 & H2 gases.
 +
**Temperatures: 300°C (std.), 200°C
 +
*Recipe name: '''''CH3-TDMAT+100W/N*-300C'''''
 +
**Uses Plasma of N2 only
 +
**Temperatures: 300°C (std.), 200°C
 +
*Recipe name: '''''CH3-TDMAT+100W/NH3*-300C'''''
 +
**Uses Plasma of NH<sub>3</sub> only
 +
**Temperatures: 300°C (std.), 200°C
 +
 +
=== Historical Data (ALD Chamber 3) ===
 +
* [[Tbd|2021 ALD Al2O3 (H2O, 300°C) Historical Data]]

Latest revision as of 14:19, 9 July 2021

Back to Vacuum Deposition Recipes.

Atomic Layer Deposition (Oxford FlexAL)

Oxford FlexAL Process Notes

Temperature

To Be Added: effect of varying temeprature

Plasma

O* or N* mean Oxygen/Nitrogen plasma, respectively.

The plasma processes on this tool will run considerably faster than purely thermal proceses, because the reaction time is faster. Also, the O* plasma may reduce carbon contaminants from the organic precursors.

The drawback is that the plasma shutter, which opens/closes between plasma steps, gets coated in materials and can cause higher particle counts.

Ozone

O3 indicates a recipe using the Ozone generator for reaction.

More info to be added

Varying Atomic Ratios

For some recipes such as TiN, there are two loops in the recipe. The outermost loop controls the total thickness of the film, the inner loop controls the ratio between the two elements. Contact the superviosr for more detailed info.

Oxford FlexAL Chamber #1: Metals

Maximum 30nm deposition thickness! (ask Tool Supervisor if needed.)

Pt deposition (ALD CHAMBER 1)

  • Recipe name: Ch1_TMCpPt+O3-300C
    • Pt deposition rate ~ 0.5-0.6 A/cyc
    • Conductivity data: (to be added)
    • recipe utilizes the ozone generator which must be first set to the following conditions:
      • O2 flow = 250sccm
      • O3 concentration = 15 wt%
    • 300°C deposition
  • Recipe name: CH1-TMCpPt+250W/O*-300C
    • Uses Oxygen plasma
    • 300°C deposition

Ru deposition (ALD CHAMBER 1)

  • Recipe name: Ch1_Ex03Ru[HPbub]+O2-300C
  • Ru deposition rate ~ 0.6-0.7A/cyc.
  • Conductivity data: (to be added)
  • 300°C, O2 gas reaction

ZnO Deposition (ALD Chamber 1)

Conductive film.

  • Recipe name: Ch1_DEZ+H2O-200C
  • ZnO deposition rate ≈ 1.6 A/cycle
  • resistivity ≈ TBA
  • 200°C Deposition, Water reaction

ZnO:Al deposition (ALD CHAMBER 1)

Al-Doped ZnO for variable resisitivity.

  • Recipe name: Ch1_DEZ/TMA+H2O-200C
    • The recipe has TWO loops. The Outer loop determines final thickness. The Inner loop determines how much AlOx is doped into the film. Note that each full (outer-loop) cycle takes a long time due to this double-loop structure.
  • Al dose fraction = 5% for lowest resistivity
  • ZnO deposition rate ~ 1.7A/cyc
  • resistivity ~ 4200uOhm.cm (390A film)

Oxford FlexAL Chamber #3: Dielectrics

Maximum 30nm deposition thickness! (ask Tool Supervisor if needed.)

Al2O3 deposition (ALD CHAMBER 3)

  • Recipe name: CH3-TMA+H2O-300C
    • Al2O3 deposition rate ~ 1A/cyc
    • 300°C Dep., Water reaction
    • This is considered the standard recipe for ALD
    • Temperature variations: 300°C (std.), 250°C, 200°C, 150°C, 120°C
  • Recipe Name: CH3-TMA+250W/O*-300C
    • Similar deposition rate
    • Oxygen Plasma reaction instead of H2O
    • Lower carbon content, approx. 1.5–2x faster deposition rate.
    • Temperature variations: 300°C (std.), 200°C, 120°C
  • Recipe Name: CH3-TMA+O3/200mT-300C
    • Similar dep. rate
    • Ozone (O3) reactant, experimental

AlN deposition (ALD CHAMBER 3)

  • Recipe name: CH3-TMA+100W/N*-300C
    • AlN deposition rate ~ t.b.d.
    • Recipe utilizes a N* plasma @ 100W, 20mTorr pressure.
    • Temperature Variations: 300°C Dep. (std.), 200*C, 120°C
    • Power variations: 300W, 400W (at 300°C)
    • Nitrogen/Hydrogen variations: "30N*/30H*" at 200*C and 300°C

HfO2 deposition (ALD CHAMBER 3)

  • Recipe name: CH3-TEMAH+H2O-300C
    • HfO2 deposition rate ~ 0.9-1.0A/cyc
    • Note: deposition shows significant parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.
    • Temperature variations: 300°C (std.), 250°C, 200°C, 150°C, 120°C
  • Recipe name: CH3-TEMAH+250W/O*-300C
    • Uses Oxygen plasma reactant instead of H2O
  • Recipe name: CH3-TEMAH+O3/100mT-300C
    • Uses Ozone (O3) for reactant instead of H2O

SiO2 deposition (ALD CHAMBER 3)

  • Recipe name: CH3-TDMAS+250W/O*-300C
    • SiO2 deposition rate ~ 0.7-0.8A/cyc
    • Recipe utilizes an O* plasma @ 250W, 5mTorr pressure, 300°C Temp.
    • Temperature variations: 300*C (std.), 250°C, 230°C, 200°C, 150°C, 120°C
  • Recipe name: CH3-TDMAS+O3/200mT-300C
    • Uses Ozone (O3) for reactant instead of H2O

ZrO2 deposition (ALD CHAMBER 3)

  • Recipe name: CH3-TEMAZ+H2O-300C
    • ZrO2 deposition rate ~ 0.9-1.0A/cyc
    • Not directly characterized since results are basically the same as the HfO2 process above.
    • Temperature variations: 300°C (std.), 200°C
  • Recipe name: CH3-TEMAZ+250W/O*-300C
    • Uses Oxygen plasma reactant instead of H2O
  • Recipe name: CH3-TEMAZ+O3/100mT-300C
    • Uses Ozone (O3) for reactant instead of H2O

TiO2 deposition (ALD CHAMBER 3)

  • Recipe name: CH3-TDMAT+H2O-300C
    • TiO2 deposition rate ~ 0.6A/cyc
    • Note: deposition shows parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.
    • Temperature variations: 300°C (std.), 200°C, 120*C
  • Recipe name: CH3-TDMAT+250W/O*-300C
    • Uses Oxygen plasma reactant instead of H2O

TiN deposition (ALD CHAMBER 3)

  • Recipe name: CH3-TDMAT+400W/12N*/4H*-300C
    • TiN deposition rate ~ 0.7A/cyc
    • Conductivity data: (to be added)
    • Uses Plasma of N2 & H2 gases.
    • Temperatures: 300°C (std.), 200°C
  • Recipe name: CH3-TDMAT+100W/N*-300C
    • Uses Plasma of N2 only
    • Temperatures: 300°C (std.), 200°C
  • Recipe name: CH3-TDMAT+100W/NH3*-300C
    • Uses Plasma of NH3 only
    • Temperatures: 300°C (std.), 200°C

Historical Data (ALD Chamber 3)