Difference between revisions of "Atomic Layer Deposition Recipes"

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{{recipes|Vacuum Deposition}}
  
{{recipes|Vacuum Deposition}}
 
=[[Atomic Layer Deposition (Oxford FlexAL)]]=
  
=[[Atomic Layer Deposition (Oxford FlexAL)]]=
−
==Al{{sub|2}}O{{sub|3}} deposition==
  
   
  +
== Oxford FlexAL Chamber #1: Metals ==
−
*{{fl|ALD-Al2O3-300-Recipe.pdf|Al{{sub|2}}O{{sub|3}} 300}}
  
  +
'''Maximum 30nm deposition thickness!''' (ask [[Brian Lingg|Tool Supervisor]] if needed.)
−
*{{fl|ALD-Al2O3-300-Saturated-Recipe.pdf|Al{{sub|2}}O{{sub|3}} 300 Saturated}}
  
  +
=== Pt deposition (ALD CHAMBER 1) ===
−
*{{fl|ALD-Al2O3-Plasma-300C-Recipe.pdf|Al{{sub|2}}O{{sub|3}} plasma 300C}}
  
  +
*Recipe name: '''''Ch1_TMCpPt+O3-300C'''''
−
*{{fl|ALD-Al2O3-100-Recipe.pdf|Al{{sub|2}}O{{sub|3}} 100}}
  
  +
**Pt deposition rate ~ 0.5-0.6 A/cyc
  +
**Conductivity data: (to be added)
  +
**recipe utilizes the ozone generator which must be first set to the following conditions:
  +
***O<sub>2</sub> flow = 250sccm
  +
***O<sub>3</sub> concentration = 15 wt%
  +
**300°C deposition
  +
*Recipe name: '''''CH1-TMCpPt+250W/O*-300C'''''
  +
**Uses Oxygen plasma
  +
**300°C deposition
   
−
==AlN deposition==
 +
=== Ru deposition (ALD CHAMBER 1) ===
  +
* Recipe name: '''''Ch1_Ex03Ru[HPbub]+O2-300C'''''
−
*{{fl|ALD-AlN-300-recipe.pdf|AlN 300}}
  
  +
* Ru deposition rate ~ 0.6-0.7A/cyc.
  +
* Conductivity data: (to be added)
  +
* 300°C, O2 gas reaction
   
  +
=== ZnO Deposition (ALD Chamber 1) ===
−
==HfO{{sub|2}} deposition==
  
  +
''Conductive film.''
−
*{{fl|ALD-HfO2-100-recipe.pdf|HfO{{sub|2}} 100}}
  
  +
* Recipe name: '''''Ch1_DEZ+H2O-200C'''''
−
*{{fl|ALD-HfO2-300-recipe.pdf|HfO{{sub|2}} 300}}
  
  +
* ZnO deposition rate ≈ 1.6 A/cycle
  +
*resistivity ≈ ''TBA''
  +
*200°C Deposition, Water reaction
  +
  +
=== ZnO:Al deposition (ALD CHAMBER 1) ===
  +
''Al-Doped ZnO for variable resisitivity.''
  +
*Recipe name: '''''Ch1_DEZ/TMA+H2O-200C'''''
  +
**''The recipe has TWO loops. The Outer loop determines final thickness. The Inner loop determines how much AlOx is doped into the film. Note that each full (outer-loop) cycle takes a long time due to this double-loop structure.''
  +
*Al dose fraction = 5% for lowest resistivity
  +
*ZnO deposition rate ~ 1.7A/cyc
  +
*resistivity ~ 4200uOhm.cm (390A film)
  +
  +
== Oxford FlexAL Chamber #3: Dielectrics ==
  +
'''Maximum 30nm deposition thickness!''' (ask [[Brian Lingg|Tool Supervisor]] if needed.)
  +
  +
===Al{{sub|2}}O{{sub|3}} deposition (ALD CHAMBER 3)===
  +
  +
*Recipe name: '''''CH3-TMA+H2O-<u>300C</u>'''''
  +
**Al<sub>2</sub>O<sub>3</sub> deposition rate ~ 1A/cyc
  +
**300°C Dep., Water reaction
  +
**This is considered the standard recipe for ALD
  +
**Temperature variations: 300°C (std.), 250°C, 200°C, 150°C, 120°C
  +
*Recipe Name: '''''CH3-TMA+250W/O*-300C'''''
  +
**Similar deposition rate
  +
**Oxygen Plasma reaction instead of H2O
  +
**Lower carbon content, approx. <u>1.5–2x faster deposition rate.</u>
  +
**Temperature variations: 300°C (std.), 200°C, 120°C
  +
*Recipe Name: '''''CH3-TMA+O3/200mT-300C'''''
  +
**Similar dep. rate
  +
**Ozone (O<sub>3</sub>) reactant, experimental
  +
  +
===AlN deposition (ALD CHAMBER 3)===
  +
*Recipe name: '''''CH3-TMA+100W/N*-300C'''''
  +
**AlN deposition rate ~ t.b.d.
  +
**Recipe utilizes a N* plasma @ 100W, 20mTorr pressure.
  +
**Temperature Variations: 300°C Dep. (std.), 200*C, 120°C
  +
**Power variations: 300W, 400W (at 300°C)
  +
**Nitrogen/Hydrogen variations: "30N*/30H*" at 200*C and 300°C
  +
  +
===HfO{{sub|2}} deposition (ALD CHAMBER 3)===
  +
*Recipe name: '''''CH3-TEMAH+H2O-300C'''''
  +
**HfO<sub>2</sub> deposition rate ~ 0.9-1.0A/cyc
  +
**Note: deposition shows significant parasitic growth (via CVD channel) if H<sub>2</sub>O purge/pump times are not sufficient.
  +
**Temperature variations: 300°C (std.), 250°C, 200°C, 150°C, 120°C
  +
*Recipe name: '''''CH3-TEMAH+250W/O*-300C'''''
  +
**Uses Oxygen plasma reactant instead of H<sub>2</sub>O
  +
*Recipe name: '''''CH3-TEMAH+O3/100mT-300C'''''
  +
**Uses Ozone (O<sub>3</sub>) for reactant instead of H<sub>2</sub>O
  +
  +
===SiO{{sub|2}} deposition (ALD CHAMBER 3)===
  +
*Recipe name: '''''CH3-TDMAS+250W/O*-300C'''''
  +
**SiO<sub>2</sub> deposition rate ~ 0.7-0.8A/cyc
  +
**Recipe utilizes an O* plasma @ 250W, 5mTorr pressure, 300°C Temp.
  +
**Temperature variations: 300*C (std.), 250°C, 230°C, 200°C, 150°C, 120°C
  +
*Recipe name: '''''CH3-TDMAS+O3/200mT-300C'''''
  +
**Uses Ozone (O<sub>3</sub>) for reactant instead of H<sub>2</sub>O
  +
  +
===ZrO{{sub|2}} deposition (ALD CHAMBER 3)===
  +
*Recipe name: '''''CH3-TEMAZ+H2O-300C'''''
  +
**ZrO<sub>2</sub> deposition rate ~ 0.9-1.0A/cyc
  +
**Not directly characterized since results are basically the same as the HfO<sub>2</sub> process above.
  +
**Temperature variations: 300°C (std.), 200°C
  +
*Recipe name: '''''CH3-TEMAZ+250W/O*-300C'''''
  +
**Uses Oxygen plasma reactant instead of H<sub>2</sub>O
  +
*Recipe name: '''''CH3-TEMAZ+O3/100mT-300C'''''
  +
**Uses Ozone (O<sub>3</sub>) for reactant instead of H<sub>2</sub>O
  +
  +
===TiO{{sub|2}} deposition (ALD CHAMBER 3)===
  +
*Recipe name: '''''CH3-TDMAT+H2O-300C'''''
  +
**TiO<sub>2</sub> deposition rate ~ 0.6A/cyc
  +
**Note: deposition shows parasitic growth (via CVD channel) if H<sub>2</sub>O purge/pump times are not sufficient.
  +
**Temperature variations: 300°C (std.), 200°C, 120*C
  +
*Recipe name: '''''CH3-TDMAT+250W/O*-300C'''''
  +
**Uses Oxygen plasma reactant instead of H<sub>2</sub>O
  +
  +
===TiN deposition (ALD CHAMBER 3)===
  +
*Recipe name: '''''CH3-TDMAT+400W/12N*/4H*-300C'''''
  +
**TiN deposition rate ~ 0.7A/cyc
  +
**Conductivity data: (to be added)
  +
**Uses Plasma of N2 & H2 gases.
  +
**Temperatures: 300°C (std.), 200°C
  +
*Recipe name: '''''CH3-TDMAT+100W/N*-300C'''''
  +
**Uses Plasma of N2 only
  +
**Temperatures: 300°C (std.), 200°C
  +
*Recipe name: '''''CH3-TDMAT+100W/NH3*-300C'''''
  +
**Uses Plasma of NH<sub>3</sub> only
  +
**Temperatures: 300°C (std.), 200°C
  +
  +
=== Historical Data (ALD Chamber 3) ===
  +
* [[Tbd|2021 ALD Al2O3 (H2O, 300°C) Historical Data]]

Revision as of 14:13, 28 May 2021

Back to Vacuum Deposition Recipes.

Atomic Layer Deposition (Oxford FlexAL)

Oxford FlexAL Chamber #1: Metals

Maximum 30nm deposition thickness! (ask Tool Supervisor if needed.)

Pt deposition (ALD CHAMBER 1)

  • Recipe name: Ch1_TMCpPt+O3-300C
    • Pt deposition rate ~ 0.5-0.6 A/cyc
    • Conductivity data: (to be added)
    • recipe utilizes the ozone generator which must be first set to the following conditions:
      • O2 flow = 250sccm
      • O3 concentration = 15 wt%
    • 300°C deposition
  • Recipe name: CH1-TMCpPt+250W/O*-300C
    • Uses Oxygen plasma
    • 300°C deposition

Ru deposition (ALD CHAMBER 1)

  • Recipe name: Ch1_Ex03Ru[HPbub]+O2-300C
  • Ru deposition rate ~ 0.6-0.7A/cyc.
  • Conductivity data: (to be added)
  • 300°C, O2 gas reaction

ZnO Deposition (ALD Chamber 1)

Conductive film.

  • Recipe name: Ch1_DEZ+H2O-200C
  • ZnO deposition rate ≈ 1.6 A/cycle
  • resistivity ≈ TBA
  • 200°C Deposition, Water reaction

ZnO:Al deposition (ALD CHAMBER 1)

Al-Doped ZnO for variable resisitivity.

  • Recipe name: Ch1_DEZ/TMA+H2O-200C
    • The recipe has TWO loops. The Outer loop determines final thickness. The Inner loop determines how much AlOx is doped into the film. Note that each full (outer-loop) cycle takes a long time due to this double-loop structure.
  • Al dose fraction = 5% for lowest resistivity
  • ZnO deposition rate ~ 1.7A/cyc
  • resistivity ~ 4200uOhm.cm (390A film)

Oxford FlexAL Chamber #3: Dielectrics

Maximum 30nm deposition thickness! (ask Tool Supervisor if needed.)

Al2O3 deposition (ALD CHAMBER 3)

  • Recipe name: CH3-TMA+H2O-300C
    • Al2O3 deposition rate ~ 1A/cyc
    • 300°C Dep., Water reaction
    • This is considered the standard recipe for ALD
    • Temperature variations: 300°C (std.), 250°C, 200°C, 150°C, 120°C
  • Recipe Name: CH3-TMA+250W/O*-300C
    • Similar deposition rate
    • Oxygen Plasma reaction instead of H2O
    • Lower carbon content, approx. 1.5–2x faster deposition rate.
    • Temperature variations: 300°C (std.), 200°C, 120°C
  • Recipe Name: CH3-TMA+O3/200mT-300C
    • Similar dep. rate
    • Ozone (O3) reactant, experimental

AlN deposition (ALD CHAMBER 3)

  • Recipe name: CH3-TMA+100W/N*-300C
    • AlN deposition rate ~ t.b.d.
    • Recipe utilizes a N* plasma @ 100W, 20mTorr pressure.
    • Temperature Variations: 300°C Dep. (std.), 200*C, 120°C
    • Power variations: 300W, 400W (at 300°C)
    • Nitrogen/Hydrogen variations: "30N*/30H*" at 200*C and 300°C

HfO2 deposition (ALD CHAMBER 3)

  • Recipe name: CH3-TEMAH+H2O-300C
    • HfO2 deposition rate ~ 0.9-1.0A/cyc
    • Note: deposition shows significant parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.
    • Temperature variations: 300°C (std.), 250°C, 200°C, 150°C, 120°C
  • Recipe name: CH3-TEMAH+250W/O*-300C
    • Uses Oxygen plasma reactant instead of H2O
  • Recipe name: CH3-TEMAH+O3/100mT-300C
    • Uses Ozone (O3) for reactant instead of H2O

SiO2 deposition (ALD CHAMBER 3)

  • Recipe name: CH3-TDMAS+250W/O*-300C
    • SiO2 deposition rate ~ 0.7-0.8A/cyc
    • Recipe utilizes an O* plasma @ 250W, 5mTorr pressure, 300°C Temp.
    • Temperature variations: 300*C (std.), 250°C, 230°C, 200°C, 150°C, 120°C
  • Recipe name: CH3-TDMAS+O3/200mT-300C
    • Uses Ozone (O3) for reactant instead of H2O

ZrO2 deposition (ALD CHAMBER 3)

  • Recipe name: CH3-TEMAZ+H2O-300C
    • ZrO2 deposition rate ~ 0.9-1.0A/cyc
    • Not directly characterized since results are basically the same as the HfO2 process above.
    • Temperature variations: 300°C (std.), 200°C
  • Recipe name: CH3-TEMAZ+250W/O*-300C
    • Uses Oxygen plasma reactant instead of H2O
  • Recipe name: CH3-TEMAZ+O3/100mT-300C
    • Uses Ozone (O3) for reactant instead of H2O

TiO2 deposition (ALD CHAMBER 3)

  • Recipe name: CH3-TDMAT+H2O-300C
    • TiO2 deposition rate ~ 0.6A/cyc
    • Note: deposition shows parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.
    • Temperature variations: 300°C (std.), 200°C, 120*C
  • Recipe name: CH3-TDMAT+250W/O*-300C
    • Uses Oxygen plasma reactant instead of H2O

TiN deposition (ALD CHAMBER 3)

  • Recipe name: CH3-TDMAT+400W/12N*/4H*-300C
    • TiN deposition rate ~ 0.7A/cyc
    • Conductivity data: (to be added)
    • Uses Plasma of N2 & H2 gases.
    • Temperatures: 300°C (std.), 200°C
  • Recipe name: CH3-TDMAT+100W/N*-300C
    • Uses Plasma of N2 only
    • Temperatures: 300°C (std.), 200°C
  • Recipe name: CH3-TDMAT+100W/NH3*-300C
    • Uses Plasma of NH3 only
    • Temperatures: 300°C (std.), 200°C

Historical Data (ALD Chamber 3)

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